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101. Ultrasound influence on the electrical activity of radiation defects in γ-irradiated n-type silicon crystals

Author

V. M. Babych, A. P. Dolgolenko, Ja. M. Olikh, and M. D. Tymochko

Subjects
Atomic physics. Constitution and properties of matter, QC170-197
Abstract

The effect of the ultrasonic (US) processing in regime (fUS = 8 МГц, WUS = 2 Вт/см2 , t ≈ 104 с) on the transformation of radiation defects (RDs) in γ-irradiated (D = 108 and 109 rad) in Chochralski-grown n-type silicon single crystals (9,5 · 1017 см-3) has been studied. The changes of the temperature dependence (100–300 К) of concentration n(T) and mobility µ(T) of charge carriers after γ-irradiated (irreversible changes) and US processing (reverse) has been exposed. Energy positions of the defect levels Eа i and their concentrations Na i from the theoretical computations were determined. Possibility of aсoustostimulated transformation of definite RDs (divacancies V2 - , Ea 1 = (Ес - 0.424 еВ), modified Аcenter (V - O), Ea 2 = (Ес - 0.205 еВ) and complex that can contain nitrogen (? + N), Ea 3 = (Ес - 0,19 еВ)) by means of change of configuration, structure and recharge for example two-dimensional energy configuration-coordinate model is considered.

Published
2007

102. Radiation hardness of silicon doped by germanium with high concentration of free oxygen

Author

M. D. Varentsov, G. P. Gaidar, A. P. Dolgolenko, and P. G. Litovchenko

Subjects
Atomic physics. Constitution and properties of matter, QC170-197
Abstract

Radiation hardness of Czochralski grown n-type silicon samples, doped by germanium (NGe = 2 ⋅ 1020 cm-3) and without that was investigated after irradiaton by fast neutrons of WWR-M reactor at room temperature.The dependence of effective carrier concentration on fluence was described in the framework of the improved Gossick’s model. It was found that the introduction of germanium leaded to the increase of n-Si radiation hardness by factor of seven times. The isothermal annealing of n-Si after fluence 1,4 ⋅ 1014 no ⋅cm-2 was studied for three temperatures. It was shown that the annealing of defect clusters is caused by the annihilation of vacancy type defects in clusters with the interstitial defects. Migration energy and frequency factor for di-interstitial (Е1 = 0,74 eV; ν1 = 3,5 ⋅ 106 s-1), for silicon interstitial atom (Е2 = 0,91 eV; ν2 = 7 ⋅ 107 s-1) and for vacancy (Еv = 0,8 eV; ν = 1 ⋅ 107 s-1) were determined.

Published
2006

103. Technical design report for the $\overline{P}$ANDA (AntiProton Annihilations at Darmstadt) Straw Tube Tracker: Strong interaction studies with antiprotons

Author

Erni, W., Keshelashvili, I., Krusche, B., Steinacher, M., Heng, Y., Liu, Z., Liu, H., Shen, X., Wang, Q., Xu, H., Aab, A., Albrecht, M., Becker, J., Csapó, A., Feldbauer, F., Fink, M., Friedel, P., Heinsius, F. H., Held, T., Klask, L., Koch, H., Kopf, B., Leiber, S., Leyhe, M., Motzko, C., Pelizäus, M., Pychy, J., Roth, B., Schröder, T., Schulze, J., Sowa, C., Steinke, M., Trifterer, T., Wiedner, U., Zhong, J., Beck, R., Bianco, S., Brinkmann, K. T., Hammann, C., Hinterberger, F., Kaiser, D., Kliemt, R., Kube, M., Pitka, A., Quagli, T., Schmidt, C., Schmitz, R., Schnell, R., Thoma, U., Vlasov, P., Walther, D., Wendel, C., Würschig, T., Zaunick, H. G., Bianconi, A., Bragadireanu, M., Caprini, M., Pantea, D., Pantelica, D., Pietreanu, D., Serbina, L., Tarta, P. D., Kaplan, D., Fiutowski, T., Idzik, M., Mindur, B., Przyborowski, D., Swientek, K., Czech, B., Kistryn, M., Kliczewski, S., Kozela, A., Kulessa, P., Lebiedowicz, P., Pysz, K., Schäfer, W., Siudak, R., Szczurek, A., Jowzaee, S., Kajetanowicz, M., Kamys, B., Kistryn, S., Korcyl, G., Korcyl, K., Krzemien, W., Magiera, A., Moskal, P., Palka, M., Rudy, Z., Salabura, P., Smyrski, J., Wrońska, A., Augustin, I., Lehmann, I., Nimorus, D., Schepers, G., Al-Turany, M., Arora, R., Deppe, H., Flemming, H., Gerhardt, A., Götzen, K., Jordi, A. F., Kalicy, G., Karabowicz, R., Lehmann, D., Lewandowski, B., Lühning, J., Maas, F., Orth, H., Patsyuk, M., Peters, K., Saito, T., Schepers, G., Schmidt, C. J., Schmitt, L., Schwarz, C., Schwiening, J., Traxler, M., Voss, B., Wieczorek, P., Wilms, A., Zühlsdorf, M., Abazov, V. M., Alexeev, G., Arefiev, A., Astakhov, V. I., Barabanov, M. Yu., Batyunya, B. V., Davydov, Yu. I., Dodokhov, V. Kh., Efremov, A. A., Fedunov, A. G., Festchenko, A. A., Galoyan, A. S., Grigoryan, S., Karmokov, A., Koshurnikov, E. K., Lobanov, V. I., Lobanov, Yu. Yu., Makarov, A. F., Malinina, L. V., Malyshev, V. L., Mustafaev, G. A., Olshevskiy, A., Pasyuk, M. A., Perevalova, E. A., Piskun, A. A., Pocheptsov, T. A., Pontecorvo, G., Rodionov, V. K., Rogov, Yu. N., Salmin, R. A., Samartsev, A. G., Sapozhnikov, M. G., Shabratova, G. S., Skachkova, A. N., Skachkov, N. B., Strokovsky, E. A., Suleimanov, M. K., Teshev, R. Sh., Tokmenin, V. V., Uzhinsky, V. V., Vodopyanov, A. S., Zaporozhets, S. A., Zhuravlev, N. I., Zorin, A. G., Branford, D., Glazier, D., Watts, D., Woods, P., Britting, A., Eyrich, W., Lehmann, A., Uhlig, F., Dobbs, S., Metreveli, Z., Seth, K., Tomaradze, A., Xiao, T., Bettoni, D., Carassiti, V., Cotta Ramusino, A., Dalpiaz, P., Drago, A., Fioravanti, E., Garzia, I., Savriè, M., Stancari, G., Bianchi, N., Gianotti, P., Guaraldo, C., Lucherini, V., Orecchini, D., Pace, E., Bersani, A., Bracco, G., Macri, M., Parodi, R. F., Bremer, D., Dormenev, V., Drexler, P., Düren, M., Eissner, T., Föhl, K., Galuska, M., Gessler, T., Hayrapetyan, A., Hu, J., Koch, P., Kröck, B., Kühn, W., Lange, S., Liang, Y., Merle, O., Metag, V., Moritz, M., Münchow, D., Nanova, M., Novotny, R., Spruck, B., Stenzel, H., Ullrich, T., Werner, M., Xu, H., Euan, C., Hoek, M., Ireland, D., Keri, T., Montgomery, R., Protopopescu, D., Rosner, G., Seitz, B., Babai, M., Glazenborg-Kluttig, A., Kavatsyuk, M., Lemmens, P., Lindemulder, M., Löhner, H., Messchendorp, J., Moeini, H., Schakel, P., Schreuder, F., Smit, H., Tambave, G., van der Weele, J. C., Veenstra, R., Sohlbach, H., Büscher, M., Deermann, D., Dosdall, R., Esch, S., Gillitzer, A., Goldenbaum, F., Grunwald, D., Henssler, S., Herten, A., Hu, Q., Kemmerling, G., Kleines, H., Kozlov, V., Lehrach, A., Maier, R., Mertens, M., Ohm, H., Orfanitski, S., Prasuhn, D., Randriamalala, T., Ritman, J., Röder, M., Schadmand, S., Serdyuk, V., Sterzenbach, G., Stockmanns, T., Wintz, P., Wüstner, P., Xu, H., Kisiel, J., Li, S., Li, Z., Sun, Z., Xu, H., Rigato, V., Fissum, S., Hansen, K., Isaksson, L., Lundin, M., Schröder, B., Achenbach, P., Bleser, S., Cahit, U., Cardinali, M., Denig, A., Distler, M., Fritsch, M., Jasinski, P., Kangh, D., Karavdina, A., Lauth, W., Merkel, H., Michel, M., Mora Espi, M. C., Müller, U., Pochodzalla, J., Sanchez, S., Sanchez-Lorente, A., Schlimme, S., Sfienti, C., Thiel, M., Weber, T., Dormenev, V. I., Fedorov, A. A., Korzhik, M. V., Missevitch, O. V., Balanutsa, V., Chernetsky, V., Demekhin, A., Dolgolenko, A., Fedorets, P., Gerasimov, A., Goryachev, V., Varentsov, V., Boukharov, A., Malyshev, O., Marishev, I., Semenov, A., Böhmer, F., Dørheim, S., Ketzer, B., Paul, S., Hergemöller, A. K., Khoukaz, A., Köhler, E., Täschner, A., Wessels, J., Varma, R., Chaterjee, A., Jha, V., Kailas, S., Roy, B. J., Yan, Y., Chinorat, K., Khanchai, K., Ayut, L., Pomrad, S., Baldin, E., Kotov, K., Peleganchuk, S., Tikhonov, Yu., Boucher, J., Chambert, V., Dbeyssi, A., Gumberidze, M., Hennino, T., Imre, M., Kunne, R., Le Galliard, C., Ma, B., Marchand, D., Maroni, A., Ong, S., Ramstein, B., Rosier, P., Tomasi-Gustafsson, E., Van de Wiele, J., Boca, G., Braghieri, A., Costanza, S., Genova, P., Lavezzi, L., Montagna, P., Rotondi, A., Abramov, V., Belikov, N., Davidenko, A., Derevschikov, A., Goncharenko, Y., Grishin, V., Kachanov, V., Konstantinov, D., Kormilitsin, V., Melnik, Y., Levin, A., Minaev, N., Mochalov, V., Morozov, D., Nogach, L., Poslavskiy, S., Ryazantsev, A., Ryzhikov, S., Semenov, P., Shein, I., Uzunian, A., Vasiliev, A., Yakutin, A., Bäck, T., Cederwall, B., Makónyi, K., Tegnér, P. E., von Würtemberg, K. M., Belostotski, S., Gavrilov, G., Itzotov, A., Kashchuk, A., Kisselev, A., Kravchenko, P., Levitskaya, O., Manaenkov, S., Miklukho, O., Naryshkin, Y., Veretennikov, D., Vikhrov, V., Zhadanov, A., Alberto, D., Amoroso, A., Bussa, M. P., Busso, L., De Mori, F., Destefanis, M., Fava, L., Ferrero, L., Greco, M., Maggiora, M., Marcello, S., Sosio, S., Spataro, S., Zotti, L., Calvo, D., Coli, S., De Remigis, P., Filippi, A., Giraudo, G., Lusso, S., Mazza, G., Morra, O., Rivetti, A., Wheadon, R., Iazzi, F., Lavagno, A., Younis, H., Birsa, R., Bradamante, F., Bressan, A., Martin, A., Clement, H., Galander, B., Caldeira Balkeståhl, L., Calén, H., Fransson, K., Johansson, T., Kupsc, A., Marciniewski, P., Thomé, E., Wolke, M., Zlomanczuk, J., Díaz, J., Ortiz, A., Dmowski, K., Duda, P., Korzeniewski, R., Slowinski, B., Chlopik, A., Guzik, Z., Kosinski, K., Melnychuk, D., Wasilewski, A., Wojciechowski, M., Wronka, S., Wysocka, A., Zwieglinski, B., Bühler, P., Hartman, O. N., Kienle, P., Marton, J., Suzuki, K., Widmann, E., and Zmeskal, J.

Published
2013
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108. Nuclear dependence of charm production

Author

Blanco-Covarrubias, A., Engelfried, J., Akgun, U., Alkhazov, G., Amaro-Reyes, J., Atamantchouk, A. G., Ayan, A. S., Balatz, M. Y., Bondar, N. F., Cooper, P. S., Dauwe, L. J., Davidenko, G. V., Dersch, U., Dolgolenko, A. G., Dzyubenko, G. B., Edelstein, R., Emediato, L., Endler, A. M. F., Eschrich, I., Escobar, C. O., Estrada, N., Evdokimov, A. V., Filimonov, I. S., Flores-Castillo, A., Garcia, F. G., Golovtsov, V. L., Gouffon, P., Gülmez, E., Iori, M., Jun, S. Y., Kaya, M., Kilmer, J., Kim, V. T., Kochenda, L. M., Konorov, I., Kozhevnikov, A. P., Krivshich, A. G., Krüger, H., Kubantsev, M. A., Kubarovsky, V. P., Kulyavtsev, A. I., Kuropatkin, N. P., Kurshetsov, V. F., Kushnirenko, A., Lach, J., Landsberg, L. G., Larin, I., Leikin, E. M., López-Hinojosa, G., Lungov, T., Maleev, V. P., Mao, D., Mathew, P., Mattson, M., Matveev, V., McCliment, E., Moinester, M. A., Molchanov, V. V., Morelos, A., Nemitkin, A. V., Neoustroev, P. V., Newsom, C., Nilov, A. P., Nurushev, S. B., Ocherashvili, A., Onel, Y., Ozkorucuklu, S., Penzo, A., Petrenko, S. V., Procario, M., Prutskoi, V. A., Razmyslovich, B. V., Rud, V. I., Russ, J., Sánchez-López, J. L., Simon, J., Sitnikov, A. I., Smith, V. J., Srivastava, M., Steiner, V., Stepanov, V., Stutte, L., Svoiski, M., Terentyev, N. K., Torres, I., Uvarov, L. N., Vasiliev, A. N., Vavilov, D. V., Vázquez-Jáuregui, E., Verebryusov, V. S., Victorov, V. A., Vishnyakov, V. E., Vorobyov, A. A., Vorwalter, K., You, J., Zukanovich-Funchal, R., and The SELEX Collaboration

Published
2009
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111. The FLINT setup for studying cumulative processes with photon production

Author

Alekseev, I. G., Belogurov, S. G., Vishnyakov, V. E., Golutvin, A. I., Goryachev, V. S., Dzyubenko, G. B., Dolgolenko, A. G., Zagreev, B. V., Kiselev, S. M., Korol’ko, I. E., Larin, I. F., Leksin, G. A., Mikhailov, K. R., Polozov, P. A., Prokudin, M. S., Svirida, D. N., Stavinskii, A. V., Stolin, V. L., and Sharkov, G. B.

Published
2008
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119. Aleksei Borisovich Kaidalov (July 20, 1940–July 25, 2010)

Author

Abov, Yu. G., Boreskov, K. G., Vysotsky, M. I., Danilov, M. V., Dolgolenko, A. G., Dremin, I. M., Zakharov, V. I., Ioffe, B. L., Kancheli, O. V., Karnakov, B. M., Lipatov, L. N., Matveev, V. A., Novikov, V. A., Okun, L. B., Saperstein, E. E., Simonov, Yu. A., Skrinsky, A. N., Tyurin, N. E., and Shevchenko, V. I.

Published
2010
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122. Search forCP violation in the K0→π+π−π0 decay

Author

Barmin, V. V., Barylov, V. G., Chistyakova, T. A., Chuvilo, I. V., Davidenko, G. V., Demidov, V. S., Dolgolenko, A. G., Matveev, V. A., Meshkovsky, A. G., Mirosidi, G. S., Moskalev, V. I., Shebanov, V. A., Shishov, N. N., Sokolov, M. M., Volkov, B. S., Zombkovskaya, N. K., Baldo-Ceolin, M., Calimani, E., Ciampolillo, S., Mattioli, F., Miari, G., and Sconza, A.

Published
1985
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123. Search for Ks0 → 2γ decay

Author

Barmin, V. V., Barylov, V. G., Chistyakova, T. A., Chuvilo, I. V., Davidenko, G. V., Demidov, V. S., Dolgolenko, A. G., Kobzarev, K. K., Meshkovsky, A. G., Mieosidy, G. S., Moskalev, V. I., Shebanov, V. A., Shishov, N. N., Vorobiev, I. I., Zombkovskaya, N. K., Baldo-Ceolin, M., Calimani, E., Ciampolillo, S., Mattioli, F., Miari, G., and Sconza, A.

Published
1986
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126. Separation of mixtures of chemical elements in plasma

Author

Dolgolenko, D A and Muromkin, Yu A

Abstract

This paper reviews proposals on the plasma processing of radioactive waste (RW) and spent nuclear fuel (SNF). The chemical processing of SNF based on the extraction of its components from water solutions is rather expensive and produces new waste. The paper considers experimental research on plasma separation of mixtures of chemical elements and isotopes, whose results can help evaluate the plasma methods of RW and SNF reprocessing. The analysis identifies the difference between ionization levels of RW and SNF components at their transition to the plasma phase as a reason why all plasma methods are difficult to apply.

Published
2017

127. Determination of oxygen in silicon and carbide by activation with 27.2 meV alpha particles

Author

Dolgolenko, A. P, Kornienko, N. D, and Lithovchenko, P. G

Subjects
Inorganic And Physical Chemistry
Abstract

The Si sample was polished on one side, and on the other side Ni was applied chemically and soldered with Pb to a water cooled Cu substrate. Optical quartz standard was fixed from the other side. Si carbide samples were soldered to a substrated with In. The prepared samples were irradiated in a cyclotron with a 27.2 MeV alpha particle beam. The layers were removed from the Si and Si carbide samples by grinding and the positron activity of F-18(t sub 1/2 110 min) was measured by using a gamma, gamma coincidence spectrometer with two NaI(TI) crystals. For analysis of Si carbide, the activity decay curve of the samples was recorded to find the contribution of the positron activity of Cu-65(t sub 1/2 12.9 hr) which formed from Ni impurity on irradiation.

Published
1978

129. CHARGE CARRIER MOBILITY IN THE CONFIGURATION RESTRUCTURING DIVACANCIES IN SILICON.

Author

Dolgolenko, A. P.

Subjects
*CHARGE carrier mobility, *ELECTRON configuration, *SILICON, *TEMPERATURE effect, *IRRADIATION, *MELTING
Abstract

Temperature dependence of the mobility of electrons and holes in p-Si, cultivated by Czochralski method and бес- тигельной zone melting, after irradiation by fast neutrons reactor was considered. In the framework of the elaborated model of clusters defects the temperature dependence of the concentration of electrons and holes in silicon samples was described. It is shown that the configuration change divacancies in clusters of defects and in conducting matrix leads to increase in the height of the drift barriers and concentration long-wave phonons in conducting matrix samples of silicon. [ABSTRACT FROM AUTHOR]

Published
2014

130. MODIFICATION OF RADIATION DEFECTS IN Si AND Ge BY BACKGROUND IMPURITY.

Author

Dolgolenko, A. P.

Subjects
*SILICON, *GERMANIUM, *ELECTRONS, *OXYGEN atom transfer reactions, *NUCLEAR energy, *NUCLEAR physics, *NEUTRONS
Abstract

Model of modification of basic levels of the known radiation defects in silicon and a germanium is offered. Energy of Hubbard is independent of number of electrons on radiation defect, and its size depends on base-line admixtures near-by vacancy defect. If near-by vacancy defect of the interstitial atom of oxygen is located, then energy of the negatively-charged acceptor defect is reducing on 0.06 eV, and energy of donor rises on the same size. The interstitial atom of silicon and of germanium changes the levels of defect on 0.03 eV. The atom of carbon in the interstitial site changes energy of vacancy defect on 0.035 eV, but in opposite direction. Modification of vacancy defects does not change energy of neutral defect level in the band gap in silicon and germanium. [ABSTRACT FROM AUTHOR]

Published
2013

131. CONFIGURATION TRANSITIONS OF DIVACANCIES IN SILICON AND GERMANIUM.

Author

Dolgolenko, O. P.

Subjects
*SILICON, *GERMANIUM, *MELTING, *ANNEALING of metals, *ISOTHERMAL processes, *METAL inclusions, *ENERGY levels (Quantum mechanics)
Abstract

High-resistance samples p-Si (p0 = (1.63 - 7.09)·1011 cm-3) and n-Si (n0 = 1.19·1014 cm-3), grown by the floating zone melting after irradiation with fast neutron reactor at 320 °C after isothermal and isochronal annealing were studied. The energy levels of divacancy in three charge states, depending on its configuration are determined. Values of the energy levels of divacancies and A - center after their modification background impurities are considered. [ABSTRACT FROM AUTHOR]

Published
2013

132. Seebeck's effect in p-SiGe whisker samples.

Author

Dolgolenko, A. P., Druzhinin, A. A., Karpenko, A. Ya., Nichkalo, S. I., Ostrovsky, I. P., Litovchenko, P. G., and Litovchenko, A. P.

Subjects
*SILICON compounds, *PRECIPITATION (Chemistry), *ELECTRIC conductivity, *TEMPERATURE measurements, *PHONON scattering, *THERMOELECTRICITY, *CRYSTAL growth
Abstract

p− SiGe whisker samples with a diameter of ∼40 µm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been measured. It has been shown that the mobility of holes in p − SiGe whiskers upon the average is 1.5 times higher than that in bulk Si − Si samples. p − SiGe whiskers possess smaller phonon scattering and larger phonon dragging in comparison with the bulk p − Si samples. [ABSTRACT FROM AUTHOR]

Published
2011

133. The kinetic of point defect transformation during the annealing process in electron-irradiated silicon.

Author

Gaidar, G. P., Dolgolenko, A. P., and Litovchenko, P. G.

Subjects
*POINT defects, *PHASE transitions, *ANNEALING of semiconductors, *SILICON, *ELECTRONS, *IRRADIATION, *TEMPERATURE measurements
Abstract

The A-centers (VO) annealing and transformation of precursors to form stable CiOi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. It was shown that the energies of migration for vacancy (V) and interstitial carbon atoms Ci that are defined by the degree of their localization in silicon lattice at the temperature close to 550 K are equal Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed., and Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed., accordingly. The values for potential barriers and their positions on the migration path of interstitial carbon atoms to oxygen (Oi) in the region for capture of Ci atom by Oi atom (with the radius 14.7 Å) are determined. It was brought evidences that vibration band of absorption at 865.9 cm-1 is attributed to A - center modified by carbon, and the band is attributed to a metastable state of CiO2i defect associated with an oxygen dimer. The position of the center donor level in the forbidden band of silicon is determined as CV + 0.415 eV. [ABSTRACT FROM AUTHOR]

Published
2011

135. Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons.

Author

Dolgolenko, A. P., Varentsov, M. D., Gaidar, G. P., and Litovchenko, P. G.

Subjects
*PARTICLES (Nuclear physics), *SATELLITE cells, *CLUSTER theory (Nuclear physics), *MATHEMATICAL analysis, *NEUTRONS, *PHYSICAL sciences research
Abstract

We have studied the high-resistance samples of p-Si (p00 = (3.3 ± 0.5) x x 1012 cm-3) and n-Si (n0 = (2.0 ± 0.3) x 1012 cm-3) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ?. The dose and the temperature dependences of the effective concentration of carriers have been measured. The calculation has been carried out in the framework of Gossick's corrected model. It is shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters, and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects (donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by small doses of neutrons, the change of a charge state of interstitial defects leads to the annealing of these defects and to a decrease of their introduction rate. [ABSTRACT FROM AUTHOR]

Published
2007

136. The radiation hardness of pulled silicon doped with germanium.

Author

Dolgolenko, A. P., Gaidar, G. P., Varentsov, M. D., and Litovchenko, P. G.

Subjects
*NEUTRON irradiation, *SEMICONDUCTOR doping, *SILICON, *GERMANIUM, *NUCLEAR structure, *PHYSICAL sciences research
Abstract

The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×1020 cm-3) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier concentration on fluence was described in the framework of Gossick's corrected model. It was found that doping the germanium impurity resulted in increase of n-Si radiation hardness. The isothermal annealing of n-Si after fluence 1.4×1014 no°cm-2 was studied. It was shown that the annealing of defect clusters is caused by the annihilation of vacancy type defects in clusters with interstitial defects. For di-interstitial (E1 = 0.74 eV; E1 = 3.5×106 s-1), silicon interstitial atom (E2 = 0.91 eV; v2 = 7×106 s-1) and vacancy (EV = 0.8 eV; v = 1×107 s-1) the migration energies and frequency factors were determined. During the storage at room temperature, the behaviour of defect levels Ec-0.17 eV and Ec-0.078 eV was studied in the samples of Si (DOFZ) and Si , correspondingly. [ABSTRACT FROM AUTHOR]

Published
2007
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137. Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons.

Author

Dolgolenko, A. P., Litovchenko, P. G., Litovchenko, A. P., Varentsov, M. D., Lastovetsky, V. F., and Gaidar, G. P.

Subjects
*SEMICONDUCTOR doping, *SEMICONDUCTOR defects, *NEUTRON transmutation doping of semiconductors, *DOPED semiconductors, *SILICON, *NEUTRON irradiation, *IRRADIATION
Abstract

Silicon n-type samples with resistivity ∼2.5·103 Ohm·cm grown by the method of a floating-zone in vacuum (FZ), in argon atmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fastpile neutrons at room temperature. The radiation hardness of n-type silicon is shown to be determined first of all by the introduction rate of defect clusters and their parameters and then by the introduction rate of defects into the conducting n-Si matrix. The presence of oxygen, argon atoms and A-type defects (dislocation loops of the interstitial type) mainly increases the radiation hardness of n-Si. The effective concentration of carriers in irradiated silicon was calculated in the framework of Gossicks model taking into account the recharges of defects both in the conducting matrix of n-Si and in the space-charge regions of defect clusters. Grown by the method of the floating-zone melting in argon atmosphere the neutron-transmutation-doped silicon (NTD) has elevated radiation hardness. The introduction rate of divacancies in the conducting matrix of n-Si (NTD) is about five times less than in n-Si (FZ) and ∼2 times less than in n-Si (Ar). The availability of the deformation strain field surrounding the argon-type impurities as well as A-type defects is supposed to promote the annihilation of divacancies with interstitial atoms of silicon. [ABSTRACT FROM AUTHOR]

Published
2004

138. The influence of defect clusters on redistribution of doping impurities in n- and p-type Si[sub 0.7]Ge[sub 0.3] irradiated by reactor neutrons.

Author

Dolgolenko, A. P.

Subjects
DOPED semiconductors, SILICON, GERMANIUM
Abstract

Samples of a silicon-germanium solid solution with n- and p-type conductivities and resistivities of 1-2 x 10[sup -3] Ω · cm doped with a natural mixture of phosphorus and boron isotopes were studied while being irradiated in the reactor core of the VVR-M reactor at temperatures in the range 200-500 °C. By using effective-medium theory it is possible to calculate the dose dependence of the resistivity and thermoelectric power of these samples in detail under conditions where clusters can act as effective nuclei for condensation of the doping impurities. Volumes are determined within which clusters can trap doping boron and phosphorus impurities during irradiation, and mean-statistical radii are calculated for the defect clusters and cross sections for their incorporation. It is shown that precipitation of phosphorus primarily decreases the concentration of carriers in a conducting host of the sample during irradiation, while trapping of boron changes the concentration of carriers in the clusters. [ABSTRACT FROM AUTHOR]

Published
1999
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139. Plasma isotope separation based on ion cyclotron resonance

Author

Dolgolenko, Dmitrii A and Muromkin, Yurii A

Abstract

Experiments that have been conducted in the USA, France, and Russia to investigate isotopically selective ion cyclotron resonance (ICR) as a tool for plasma isotope separation are analyzed. Because this method runs into difficulties at low values of the relative isotope mass difference DM/M, for some elements (for gadolinium, as an example) isotope separation still remains a problem. There are ways to solve it, however, as experimental results and theoretical calculations suggest.

Published
2009

140. The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons

Author

Dolgolenko, A.P. and Gaidar, G.P.

Abstract

The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework of the Gossick's model the concentration of defects for the average cluster is in inverse proportion to the square of a cluster radius. One obtains the size distribution of defect clusters created by fast neutrons of WWR-M reactor, by the transformation of energy spectrum of the primary knock-on atom in n-Si (FZ, Cz). Threshold energy of defect clusters formation 4.7 keV by comparing n-Si crystals irradiated by deuterons and fast-pile neutrons was calculated.

Published
2005
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142. Measurement of the Ds±lifetime

Author

Iori, M, Alkhazov, G, Atamantchouk, A.G, Balatz, M.Y, Bondar, N.F, Cooper, P.S, Dauwe, L.J, Davidenko, G.V, Dersch, U, Dolgolenko, A.G, Dzyubenko, G.B, Edelstein, R, Emediato, L, Endler, A.M.F, Engelfried, J, Eschrich, I, Escobar, C.O, Evdokimov, A.V, Filimonov, I.S, Garcia, F.G, Gaspero, M, Giller, I, Golovtsov, V.L, Gouffon, P, Gülmez, E, Kangling, He, Jun, S.Y, Kaya, M, Kilmer, J, Kim, V.T, Kochenda, L.M, Konorov, I, Kozhevnikov, A.P, Krivshich, A.G, Krüger, H, Kubantsev, M.A, Kubarovsky, V.P, Kulyavtsev, A.I, Kuropatkin, N.P, Kurshetsov, V.F, Kushnirenko, A, Kwan, S, Lach, J, Lamberto, A, Landsberg, L.G, Larin, I, Leikin, E.M, Li, Y, Luksys, M, Lungov, T, Maleev, V.P, Mao, D, Mao, C, Mao, Z, Mathew, P, Mattson, M, Matveev, V, McCliment, E, Moinester, M.A, Molchanov, V.V, Morelos, A, Nelson, K.D, Nemitkin, A.V, Neoustroev, P.V, Newsom, C, Nilov, A.P, Nurushev, S.B, Ocherashvili, A, Onel, Y, Ozel, E, Ozkorucuklu, S, Penzo, A, Petrenko, S.V, Pogodin, P, Procario, M, Prutskoi, V.A, Ramberg, E, Rappazzo, G.F, Razmyslovich, B.V, Rud, V.I, Russ, J, Schiavon, P, Simon, J, Sitnikov, A.I, Skow, D, Smith, V.J, Srivastava, M, Steiner, V, Stepanov, V, Stutte, L, Svoiski, M, Terentyev, N.K, Thomas, G.P, Uvarov, L.N, Vasiliev, A.N, Vavilov, D.V, Verebryusov, V.S, Victorov, V.A, Vishnyakov, V.E, Vorobyov, A.A, Vorwalter, K, You, J, Zhaog, W, Zheng, S, and Zukanovich-Funchal, R

Abstract

We report a precise measurement of the D±smeson lifetime. The data were taken by the SELEX experiment (E781) spectrometer using 600 GeV/cΣ−, π−and pbeams. The measurement has been done using 918 reconstructed D±s. The lifetime of the D±sis measured to be 472.5±17.2±6.6 fs, using K∗(892)0K±and φπ±decay modes. The lifetime ratio of Ds±to D0is 1.145±0.049.

Published
2001
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143. Measurement of the Σ−charge radius by Σ−–electron elastic scattering

Author

Eschrich, I, Krüger, H, Simon, J, Vorwalter, K, Alkhazov, G, Atamantchouk, A.G, Balatz, M.Y, Bondar, N.F, Cooper, P.S, Dauwe, L.J, Davidenko, G.V, Dersch, U, Dirkes, G, Dolgolenko, A.G, Dzyubenko, G.B, Edelstein, R, Emediato, L, Endler, A.M.F, Engelfried, J, Escobar, C.O, Evdokimov, A.V, Filimonov, I.S, Garcia, F.G, Gaspero, M, Giller, I, Golovtsov, V.L, Gouffon, P, Gülmez, E, He, Kangling, Iori, M, Jun, S.Y, Kaya, M, Kilmer, J, Kim, V.T, Kochenda, L.M, Königsmann, K, Konorov, I, Kozhevnikov, A.P, Krivshich, A.G, Kubantsev, M.A, Kubarovsky, V.P, Kulyavtsev, A.I, Kuropatkin, N.P, Kurshetsov, V.F, Kushnirenko, A, Kwan, S, Lach, J, Lamberto, A, Landsberg, L.G, Larin, I, Leikin, E.M, Li, Yunshan, Luksys, M, Lungov, T, Maleev, V.P, Mao, D, Mao, Chensheng, Mao, Zhenlin, Masciocchi, S, Mathew, P, Mattson, M, Matveev, V, McCliment, E, Moinester, M.A, Molchanov, V.V, Morelos, A, Nelson, K.D, Nemitkin, A.V, Neoustroev, P.V, Newsom, C, Nilov, A.P, Nurushev, S.B, Ocherashvili, A, Onel, Y, Ozel, E, Ozkorucuklu, S, Penzo, A, Petrenko, S.V, Pogodin, P, Povh, B, Procario, M, Prutskoi, V.A, Ramberg, E, Rappazzo, G.F, Razmyslovich, B.V, Rud, V.I, Russ, J, Scheglov, Y, Schiavon, P, Sitnikov, A.I, Skow, D, Smith, V.J, Srivastava, M, Steiner, V, Stepanov, V, Stutte, L, Svoiski, M, Terentyev, N.K, Thomas, G.P, Uvarov, L.N, Vasiliev, A.N, Vavilov, D.V, Verebryusov, V.S, Victorov, V.A, Vishnyakov, V.E, Vorobyov, A.A, You, J, Zhao, Wenheng, Zheng, Shuchen, and Zukanovich-Funchal, R

Abstract

The Σ−mean squared charge radius has been measured in the space-like Q2range 0.035–0.105 GeV2/c2by elastic scattering of a Σ− beam off atomic electrons. The measurement was performed with the SELEX (E781) spectrometer using the Fermilab hyperon beam at a mean energy of 610 GeV/c.

Published
2001
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144. Radiative decay width of the a2(1320)−meson

Author

Molchanov, V.V., Alkhazov, G., Atamantchouk, A.G., Balatz, M.Y., Bondar, N.F., Casey, D., Cooper, P.S., Dauwe, L.J., Davidenko, G.V., Dersch, U., Dolgolenko, A.G., Dzyubenko, G.B., Edelstein, R., Emediato, L., Endler, A.M.F., Engelfried, J., Eschrich, I., Escobar, C.O., Evdokimov, A.V., Ferbel, T., Filimonov, I.S., Garcia, F.G., Gaspero, M., Giller, I., Golovtsov, V.L., Gouffon, P., G, E., Hammer, C., He, Kangling, Iori, M., Jun, S.Y., Kaya, M., Kilmer, J., Kim, V.T., Kochenda, L.M., Konorov, I., Kozhevnikov, A.P., Krivshich, A.G., Kr, H., Kubantsev, M.A., Kubarovsky, V.P., Kulyavtsev, A.I., Kuropatkin, N.P., Kurshetsov, V.F., Kushnirenko, A., Kwan, S., Lach, J., Lamberto, A., Landsberg, L.G., Larin, I., Leikin, E.M., Li, Yunshan, Luksys, M., Lungov, T., Maleev, V.P., Mao, D., Mao, Chensheng, Mao, Zhenlin, Mathew, P., Mattson, M., Matveev, V., McCliment, E., Moinester, M.A., Morelos, A., Mukhin, V.A., Nelson, K.D., Nemitkin, A.V., Neoustroev, P.V., Newsom, C., Nilov, A.P., Nurushev, S.B., Ocherashvili, A., Onel, Y., Ozel, E., Ozkorucuklu, S., Penzo, A., Petrenko, S.V., Pogodin, P., Procario, M., Prutskoi, V.A., Ramberg, E., Rappazzo, G.F., Razmyslovich, B.V., Rud, V.I., Russ, J., Schiavon, P., Simon, J., Sitnikov, A.I., Skow, D., Slattery, P., Smith, V.J., Srivastava, M., Steiner, V., Stepanov, V., Stutte, L., Svoiski, M., Terentyev, N.K., Thomas, G.P., Uvarov, L.N., Vasiliev, A.N., Vavilov, D.V., Verebryusov, V.S., Victorov, V.A., Vishnyakov, V.E., Vorobyov, A.A., Vorwalter, K., You, J., Zhao, Wenheng, Zheng, Shuchen, Zhu, Z.H., Zielinski, M., and Zukanovich, R.

Abstract

Coherent π+π−π−production in the interactions of a beam of 600GeVπ−mesons with C, Cu and Pb nuclei has been studied with the SELEX facility (Experiment E781 at Fermilab). The a2(1320) meson signal has been detected in the Coulomb (low q2) region. The Primakoff formalism used to extract radiative decay width of this meson yields Γ=284±25±25keV, which is the most precise measurement to date.

Published
2001
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145. Evidence of elementary processes for hyperon production in low-energy antiproton annihilation on Xenon nuclei

Author

Barmin, V.V., Barylov, V.G., Borisov, V.S., Davidenko, G.V., Dolgolenko, A.G., Guaraldo, C., Matveev, V.A., Mirosidi, G.S., Myklebost, K., Olsen, M., Petrascu, C., Shebanov, V.A., Shishov, N.N., Sibirtsev, A.A., Sokolov, L.I., Volkov, B.S., and Zombkovskaya, N.K.

Abstract

Hyperon production mechanisms in antiproton annihilation on nuclei at low energy were investigated by using 7.8×105annihilations events in the Xe bubble chamber DIANA at Pp̄≤0.9GeV/c. The full kinematical reconstruction of the two-body secondary hyperon production reactions KN→Λπ0and ωp→K+Λwas performed and it was found that most of hyperons (about 70%) are produced via the reaction KN→YX, while the remaining ones come mainly from the ωN→KYXprocess, in agreement with the predictions of the cascade models. The KN→Λπ0and the ωp→K+Λcross sections were also estimated as further consistency check. The latter, σK+Λω=(0.47±0.25)mb at 〈Pω〉=0.42GeV/c, represents the first experimental determination.

Published
2001
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146. Variation of Carrier Removal Rate with Irradiation Dose in Fast-Pile Neutron Irradiated n-Si

Author

Dolgolenko, A.P.

Abstract

Float-zone and Czochralski phosphorus-doped n-Si samples with a resistivity ϱ < 40 Ωcm were investigated after irradiation with various doses of fast-pile neutrons. Equations for the calculation of average and instantaneous carrier removal rates by clusters and point defects in the conducting matrix of high-resistivity Si have been derived. Only the calculation of defect recharges in the space-charge regions of clusters allowed to determine the temperature dependence of the effective carrier concentration. Simple defect build-up kinetics for deep acceptor levels have been calculated with the assumption that apart from the V2-, E-, and G16 centres interstitial Si was also accumulated in the conducting matrix.

Published
2000
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