1,320 results on '"Delage S"'
Search Results
102. Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance
103. Compact modelling of InAlN/GaN HEMT for low noise applications
104. S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs
105. Swelling of Elastomers in CO2 Environment: Testing Methodology and Experimental Data
106. Gallium nitride activity at TIGER
107. Influence de la température sur les caractéristiques pulsées statiques et hyperfréquences des HEMTs AlGaN/GaN sur substrat silicium résistif (111)
108. LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide
109. Caractérisation de transistors à effet de champ à base de GaN
110. La filière GaN pour les applications hyperfréquences
111. High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz
112. Ka-band low noise amplifiers based on InAlN/GaN technologies.
113. InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances.
114. Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs
115. Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate
116. Autogenous Shrinkage of Hardening Cement Paste in Oil Wells
117. Monte Carlo analysis of the influence of dc conditions on the upconversion of generation-recombination noise in semiconductors.
118. Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance.
119. Long‐Distance Pollen Flow in Large Fragmented Landscapes
120. 160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
121. InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment
122. Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors
123. Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation
124. AlGaN/GaN based field effect transistors for terahertz detection and imaging
125. Flexible, Expanding Cement System (FECS) Successfully Provides Zonal Isolation Across Marcellus Shale Gas Trends
126. Development of InAlN/GaN HEMTs Power Devices in S-Band
127. Sub-terahertz resistive mixing in an AlGaN/GaN FET
128. Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors
129. 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
130. LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications
131. Thermal oxidation of lattice matched InAlN/GaN heterostructures
132. InAlN/GaN heterostructures for microwave power and beyond
133. Thick nano-crystalline diamond overgrowth on InAlN/GaN devices for thermal management
134. Above 500 °C operation of InAlN/GaN HEMTs
135. Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs
136. Preserving Stored Gas Reserves: Self Repairing Cement Sheath Protects Underground Gas Storage Investment
137. InAIN/GaN MOSHEMT with Al2O3 insulating film
138. Increased reliability of AlGaN/GaN HEMTs versus temperature using deuterium
139. State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers
140. Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature
141. Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects
142. A Concept for Diamond Overlayers on Nitride Heterostructures
143. Preserving Stored Gas Reserves: Self Repairing Cement Sheath Protects Underground Gas Storage Investment
144. First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate
145. Erratum: “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN” [Appl. Phys. Lett. 90, 072107 (2007)]
146. Self-Healing Cement—Novel Technology to Achieve Leak-Free Wells
147. Deuterium passivation of electrically active defects in nonintentionally doped n-GaN
148. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
149. Robust GaN Electronics for Highly Reliable BF and RF Analog Systems in Aerospace Applications
150. Evaluation of Cement Systems for Oil and Gas-Well Zonal Isolation in a Full-Scale Annular Geometry
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.