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307 results on '"Decobert J"'

110. Correction to “Recent Advances in Avalanche Photodiodes”

Author

Campbell, J.C., primary, Demiguel, S., additional, Ma, F., additional, Beck, A., additional, Guo, X., additional, Wang, S., additional, Zheng, X., additional, Li, X., additional, Beck, J.D., additional, Kinch, M.A., additional, Huntington, A., additional, Coldren, L.A., additional, Decobert, J., additional, and Tscherptner, N., additional

Published
2004
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111. Recent Advances in Avalanche Photodiodes

Author

Campbell, J.C., primary, Demiguel, S., additional, Ma, F., additional, Beck, A., additional, Guo, X., additional, Wang, S., additional, Zheng, X., additional, Li, X., additional, Beck, J.D., additional, Kinch, M.A., additional, Huntington, A., additional, Coldren, L.A., additional, Decobert, J., additional, and Tscherptner, N., additional

Published
2004
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138. Revealing of InP multi-layer stacks from KPFM measurements in the dark and under illumination

Author

da Lisca Mattia, Connolly James P., Alvarez José, Mekhazni Karim, Vaissiere Nicolas, Decobert Jean, and Kleider Jean-Paul

Subjects
kelvin probe force microscopy, iii-v multilayer stack, surface photovoltage, Renewable energy sources, TJ807-830
Abstract

Solar cells are complex devices, being constituted of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. This paper applies Kelvin probe force microscopy (KPFM) to study materials and interfaces with nanometer scale imaging of the surface potential in the dark and under illumination. KPFM measurements are highly sensitive to surface states and to the experimental measurement environment influencing the atomic probe operating conditions. Therefore, in order to develop a quantitative understanding of KPFM measurements, we have prepared a dedicated structured sample with alternating layers of InP:S and InP:Fe whose doping densities were determined by secondary-ion mass spectroscopy. We have performed KPFM measurements and shown that we can spatially resolve 20 nm thick InP layers, notably when performed under illumination which is well-known to reduce the surface band-bending.

Published
2022
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139. Growth and characterization of type-II/type-I AlGaInAs/InP interfaces

Author

Sacilotti, M., primary, Motisuke, F., additional, Monteil, Y., additional, Abraham, P., additional, Iikawa, F., additional, Montes, C., additional, Furtado, M., additional, Horiuchi, L., additional, Landers, R., additional, Morais, J., additional, Cardoso, L., additional, Decobert, J., additional, and Waldman, B., additional

Published
1992
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146. Analysis of thermal limitations in high-speed microcavity saturable absorber all-optical switching gates.

Author

Massoubre, D., Oudar, J.-L., O'Hare, A., Gay, M., Bramerie, L., Simon, J.-C., Shen, A., and Decobert, J.

Abstract

The limitations owing to device heating and thermo-optic effects in high-speed quantum-well microcavity saturable absorber devices are investigated both theoretically and experimentally. A simplified theoretical description of the device electronic, thermal, and optical properties is developed and applied to the modeling of the device switching characteristics for reamplification + reshaping step (2R) all-optical regeneration. These predictions are compared to nonlinear optical measurements performed with switching pulses of fixed duration and variable repetition rate on two devices with significantly different thermal properties. It is shown that proper optimization of the device thermal properties is crucial to avoid the degradation of device performance at high bit rate. It is also shown that the negative effects of optically induced heating on the switching contrast may be compensated to some extent by operating the device on the long wavelength side of the microcavity resonance [ABSTRACT FROM PUBLISHER]

Published
2006
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147. Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes.

Author

Demiguel, S., Giraudet, L., Joulaud, L., Decobert, J., Blache, F., Coupe, V., Jorge, F., Pagnod-Rossiaux, P., Boucherez, E., Achouche, M., and Devaux, F.

Abstract

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-μm fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (±1.6 μm and ±2 μm, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes. [ABSTRACT FROM PUBLISHER]

Published
2002
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