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We investigate the link between superconductivity and atomic vibrations in Nb3Sn films with a thickness ranging from 10 to 50 nm. The challenge of measuring the phonon density of states (PDOS) of these films has been tackled by employing the technique of nuclear inelastic scattering by "9Sn isotopes to reveal the Sn-partial phonon density of states. With the support of ab initio calculations, we evaluate the effect of reduced film thickness on the PDOS. This approach allows us to estimate the changes in superconducting critical temperature Tc induced by phonon confinement, which turned out to be limited to a few tenths of K. The presented method is sUccessful for the Nb3 Sn system and paves the way for more systematic studies of the role of phonon confinement in Sn-containing superconductors. [ABSTRACT FROM AUTHOR]

Using x-ray absorption spectroscopy, scanning tunneling microscopy and low-energy electron diffraction we have studied the surface chemistry and atomic structure of the sulfur passivation layer formed on Ge(100) surfaces upon treatment in an aqueous (NH4)2S solution at room temperature. This treatment was shown to yield incomplete sulfur coverage (<1 monolayer) and residual Ge oxides regardless of the time the substrates are immersed in the solution. Scanning tunneling microscopy images of the surface structure of the passivation layer reveal the coexistence of locally ordered and large disordered areas, attributed to S-Ge and O-Ge bonds, respectively. The passivated surfaces exhibit a pronounced (1 × 1) electron diffraction pattern. The formation of the passivation layer appears to be dependent on the state of the Ge surface prior to sulfidation, i.e. on the presence of surface oxides, which hamper the formation of a long-range ordered sulfur monolayer. [ABSTRACT FROM AUTHOR]

We present a study of the magnetic structure of an exchange biased FePt/FePt3 bilayer system. By combining nuclear resonant scattering and polarized neutron reflectometry on the same sample, we are able to assess the magnetic ground state of both the ferromagnetic (F) FePt and antiferromagnetic (AF) FePt3 components of the system. Below the Néel temperature TN, AF order appears in the FePt3 layer with a spin wavevector pointing along the [100] axis. The AF Q1 phase, where the spin wavevector aligns along the [110] axis is not observed. A net magnetization of the FePt3 layer, which increases towards the FePt/FePt3 interface, is found. Magnetic coupling between the ferromagnetic moments within the FePt3 layer and the adjacent FePt layer is believed to be the cause of the suppression of the Q1 phase. [ABSTRACT FROM AUTHOR]

Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping ( T AD ) and fieldlike ( T FL ) torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal ( T AD ) and transverse ( T FL ) components of the SOT vector and its efficiency χ AD and χ FL , respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ). Modulation of nucleation or switching field ( B SF ) for magnetization reversal by SOT effective fields ( B SOT ) leads to the modification of SOT-MTJ hysteresis loop behavior from which χ AD and χ FL are quantified. Surprisingly, in nanoscale W/CoFeB SOT-MTJ, we find χ FL to be (i) twice as large as χ AD and (ii) 6 times as large as χ FL in micrometer-sized W/CoFeB Hall-bar devices. Our quantification is supported by micromagnetic and macrospin simulations which reproduce experimental SOT-MTJ Stoner-Wohlfarth astroid behavior only for χ FL > χ AD . Additionally, from the threshold current for current-induced magnetization switching with a transverse magnetic field, we show that in SOT-MTJ, T FL plays a more prominent role in magnetization dynamics than T AD . Due to SOT-MRAM geometry and nanodimensionality, the potential role of nonlocal spin Hall spin current accumulated adjacent to the SOT-MTJ in the mediation of T FL and χ FL amplification merits to be explored.

Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, controlling and improving distributions of device properties becomes a key enabler of new applications at this stage of technology development. Here, we introduce a non-contact metrology technique deploying scanning NV magnetometry (SNVM) to investigate MRAM performance at the individual bit level. We demonstrate magnetic reversal characterization in individual, <60 nm-sized bits, to extract key magnetic properties, thermal stability, and switching statistics, and thereby gauge bit-to-bit uniformity. We showcase the performance of our method by benchmarking two distinct bit etching processes immediately after pattern formation. In contrast to ensemble averaging methods such as perpendicular magneto-optical Kerr effect, we show that it is possible to identify out of distribution (tail-bits) bits that seem associated to the edges of the array, enabling failure analysis of tail bits. Our findings highlight the potential of nanoscale quantum sensing of MRAM devices for early-stage screening in the processing line, paving the way for future incorporation of this nanoscale characterization tool in the semiconductor industry., Competing Interests: Competing interestsThe authors declare no competing interests., (© The Author(s) 2024.)

The distribution of the easy-axes in an array of MRAM cells is a vital parameter to understand the switching and characteristics of the devices. By measuring the coercivity as a function of applied-field angle, and remaining close to the perpendicular orientation, a classic Stoner-Wohlfarth approximation has been applied to the resulting variation to determine the standard deviation, [Formula: see text], of a Gaussian distribution of the orientation of the easy-magnetisation directions. In this work we have compared MRAM arrays with nominal cells sizes of 20 nm and 60 nm and a range of free layer thicknesses. We have found that a smaller diameter cell will have a wider switching-field distribution with a standard deviation [Formula: see text]. The MRAM arrays consist of pillars produced by etching a multilayer thin film. This value of [Formula: see text] is dominated by pillar uniformity and edge effects controlling the reversal, reinforcing the need for ever-improving etch processes. This is compared to larger pillars, with distributions as low as [Formula: see text]. Furthermore we found that the distribution broadens from [Formula: see text] to [Formula: see text] with free layer thickness in larger pillars and that thinner films had a more uniform easy-axis orientation. For the 20 nm pillars the non-uniform size distribution of the pillars, with a large and unknown error in the free-layer volume, was highlighted as it was found that the activation volume for the reversal of the free layer 930 nm[Formula: see text] was larger than the nominal physical volume of the free layer. However for the 60 nm pillars, the activation volume was measured to be equal to one fifth of their physical volume. This implies that the smaller pillars effectively reverse as one entity while the larger pillars reverse via an incoherent mechanism of nucleation and propagation., (© 2023. The Author(s).)

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicularly magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially nonuniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.

Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes., (© 2022. Springer Nature Limited.)

The increase in superconducting transition temperature (T C ) of Sn nanostructures in comparison to bulk, was studied. Changes in the phonon density of states (PDOS) of the weakly coupled superconductor Sn were analyzed and correlated with the increase in T C measured by magnetometry. The PDOS of all nanostructured samples shows a slightly increased number of low-energy phonon modes and a strong decrease in the number of high-energy phonon modes in comparison to the bulk Sn PDOS. The phonon densities of states, which were determined previously using nuclear resonant inelastic X-ray scattering, were used to calculate the superconducting transition temperature using the Allen-Dynes-McMillan (ADMM) formalism. Both the calculated as well as the experimentally determined values of T C show an increase compared to the bulk superconducting transition temperature. The good agreement between these values indicates that phonon softening has a major influence on the superconducting transition temperature of Sn nanostructures. The influence of electron confinement effects appears to be minor in these systems.

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random access memories. To develop faster memory devices, an improvement in the timescales that underlie the current-driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process that consists of a domain nucleation time and propagation time, which have different genesis, timescales and statistical distributions compared to STT switching. We further show that the combination of SOT, STT and the voltage control of magnetic anisotropy leads to reproducible subnanosecond switching with the spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT and the voltage control of magnetic anisotropy in determining the switching speed and efficiency of MTJ devices.

The recent demonstration of ferroelectricity in ultrathin HfO 2 has kickstarted a new wave of research into this material. HfO 2 in the orthorhombic phase can be considered the first and only truly nanoscale ferroelectric material that is compatible with silicon-based nanoelectronics applications. In this article, we demonstrate the ferroelectric control of the magnetic properties of cobalt deposited on ultrathin aluminum-doped, atomic layer deposition-grown HfO 2 ( t HfO 2 = 6.5 nm). The ferroelectric effect is shown to control the shape of the magnetic hysteresis, quantified here by the magnetic switching energy. Furthermore, the magnetic properties such as the remanence are modulated by up to 41%. We show that this modulation does not only correlate with the charge accumulation at the interface but also shows an additional component associated with the ferroelectric polarization switching. An in-depth analysis using first order reversal curves shows that the coercive and interaction field distributions of cobalt can be modulated up to, respectively, 5.8% and 10.5% with the ferroelectric polarization reversal.

Cobalt sputter deposition on a nanostructured polystyrene-block-poly(ethylene oxide), P(S-b-EO), template is followed in real time with grazing incidence small-angle X-ray scattering (GISAXS). The polymer template consists of highly oriented parallel crystalline poly(ethylene oxide) (PEO) domains that are sandwiched between two polystyrene (PS) domains. In-situ GISAXS shows that cobalt atoms selectively decorate the PS domains of the microphase-separated polymer film and then aggregate to form surface metal nanopatterns. The polymer template is acting as a directing agent where cobalt metal nanowires are formed. At high metal load, the characteristic selectivity of the template is lost, and a uniform metal layer forms on the polymer surface. During the early stage of cobalt metal deposition, a highly asymmetric nanoparticles agglomeration is dominating structure formation. The cobalt nanoparticles mobility in combination with the high tendency of the nanoparticles to coalescence and to form immobile large-sized particles at the PS domains are discussed as mechanisms of structure formation.

Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional cluster structures. A corresponding three stage growth model (surface bonding, agglomeration, and layer growth) is derived. X-ray reflectivity shows the penetration of Al atoms into the P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface., (© 2011 American Chemical Society)

Cobalt (Co) sputter deposition onto a colloidal polymer template is investigated using grazing incidence small-angle X-ray scattering (GISAXS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). SEM and AFM data picture the sample topography, GISAXS the surface and near-surface film structure. A two-phase model is proposed to describe the time evolution of the Co growth. The presence of the colloidal template results in the correlated deposition of an ultrathin Co film on the sample surface and thus in the creation of Co capped polystyrene (PS) colloids. Well below the percolation threshold, the radial growth is restricted and only height growth is observed.

Superradiance, the cooperative spontaneous emission of photons from an ensemble of identical atoms, provides valuable insights into the many-body physics of photons and atoms. We show that an ensemble of resonant atoms embedded in the center of a planar cavity can be collectively excited by synchrotron radiation into a purely superradiant state. The collective coupling of the atoms via the radiation field leads to a substantial radiative shift of the transition energy, the collective Lamb shift. We simultaneously measured the temporal evolution of the superradiant decay and the collective Lamb shift of resonant 57Fe nuclei excited with 14.4-kilo-electron volt synchrotron radiation. Our experimental technique provides a simple method for spectroscopic analysis of the superradiant emission.

The growth of a thin gold film on a conducting polymer surface from nucleation to formation of a continuous layer with a thickness of several nanometers is investigated in situ with grazing incidence small-angle X-ray scattering (GISAXS). Time resolution is achieved by performing the experiment in cycles of gold deposition on poly(N-vinylcarbazole) (PVK) and subsequently recording the GISAXS data. The 2D GISAXS patterns are simulated, and morphological parameters of the gold film on PVK such as the cluster size, shape, and correlation distance are extracted. For the quantitative description of the cluster size evolution, scaling laws are applied. The time evolution of the cluster morphology is explained with a growth model, suggesting a cluster growth proceeding in four steps, each dominated by a characteristic kinetic process: nucleation, lateral growth, coarsening, and vertical growth. A very limited amount of 6.5 wt % gold is observed to be incorporated inside a 1.2-nm-thick enrichment layer in the PVK film.

We report on a compact ultrahigh vacuum deposition system developed for in situ experiments using hard x rays. The chamber can be mounted on various synchrotron beamlines for spectroscopic as well as scattering experiments in grazing incidence geometry. The deposition process is completely remotely controlled and an ellipsometer is available for online monitoring of the layer growth process. The unique sample position in the chamber allows one to perform deposition, grazing incidence x-ray experiments, and ellipsometry measurements at the same time, enabling to correlate the x-ray analysis with parameters of the growth process. Additionally, the setup can be used to study in situ chemical and structural changes in an element specific manner by x-ray absorption spectroscopy. The flexibility and versatility of the system brings new possibilities to study the chemistry and structure of surfaces and interfaces in thin films systems during their formation.

We have studied in situ the oxidation of ultrathin iron layers and monitored the chemical changes induced by subsequent deposition of Fe metal using hard x-ray absorption spectroscopy. The site sensitivity of the technique allows us to quantify the composition of the layer throughout the oxidation or deposition process. It is found that the thin native oxide incorporates a significant fraction of Fe atoms remaining in a metallic configuration even in the saturated state. Subsequent deposition of Fe leads to a complete reduction of the oxide that adopts an FeO-like structure containing Fe2+ sites only.