794 results on '"Cho, Won-Ju"'
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102. A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
103. Substrate bias and operating temperature effects on the performance of Schottky-barrier SOI nMOSFETs
104. Hot-carrier effects as a function of silicon film thickness in nanometer-scale SOI pMOSFETs
105. Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate
106. Application of HfO2 high-k gate insulator for excimer laser annealed poly-Si TFT
107. Enhanced of electrical characteristics of nano-crystal floating gate memory with In2O3 nano-particles embedded in polyimide
108. Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates
109. High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation
110. Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors
111. Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation
112. Investigation of resistance change characteristics with applied electric field on Ag/chalcogenide As 2S 3 and As 40Ge 10Se 15S 35 thin film structure
113. Fabrication of p-type fin field-effect-transistors by solid-phase boron diffusion process using thin film doping sources
114. High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor
115. Lithography Processable Ta2O5 Barrier-Layered Chitosan Electric Double Layer Synaptic Transistors
116. Memristive Switching Characteristics in Biomaterial Chitosan-Based Solid Polymer Electrolyte for Artificial Synapse
117. Modulation of Excitatory Behavior by Organic-Inorganic Hybrid Electric-Double-Layers in Polysilicon Synaptic Transistors
118. Lowering the Trap-State Density of Transparent Amorphous Oxide Semiconductor-Based Thin Film Transistors Through Microwave Irradiation
119. Fabrication of AlGaN/GaN MOS HEMT-based high-sensitivity EGFET pH sen-sor with coplanar gate structure
120. Microwave-assisted Calcination of IGZO Nanofibers Field-effect Transistors for Transparent and Flexible Electronic Devices
121. Thermal Damage-free Microwave Annealing for Fabricating High-performance a-IGZO Thin Film Transistors on Flexible Substrates
122. Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment
123. Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation
124. Performance Enhancement of Channel-Engineered Al–Zn–Sn–O Thin-Film Transistors with Highly Conductive In–Ga–Zn–O Buried Layer via Vacuum Rapid Thermal Annealing
125. Microwave calcination of electrospun ITO nanofibers and improvement of transparent electrode characteristics through vacuum rapid thermal annealing
126. Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing
127. Effect of Simplified-Single-Step Microwave Annealing in O2 Ambient for High Performance Solution-Processed In–Ga–Zn–O Thin Film Transistors
128. Ultrasensitive Coplanar Dual-Gate ISFETs for Point-of-Care Biomedical Applications
129. Low-Power Microwave Annealing Effect for Random Carbon Nanotube Network-Based Thin-Film Transistors and Inverter Circuits
130. Rare Metal‐Free High‐Performance Zinc–Tin Oxide Thin Film Transistors Using Efficient Energy Conversion of Microwave Annealing
131. Verification of microwave annealing ambient effect on sol-gel-processed amorphous In–Ga–Zn–O thin-film transistors and application to inverter circuit
132. High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors
133. Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors
134. Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs
135. High-Performance Microwave-Annealed Indium-Gallium-Zinc Oxide Thin-Film-Transistors with Buried Conductive Layers
136. Fabrication of IGZO-Based 1T-1R ReRAMs for Flexible and Transparent System-on-Panel (SoP) Application
137. Serendipitous Doping in Nickel Oxide upon Microwave‐Induced Low‐Temperature Crystallization Enhances Efficiency of Perovskite Solar Cells.
138. Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFET
139. Ultra shallow and abrupt n +–p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices
140. Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory
141. Multi-Layered SiC Nanocrystals Embedded in SiO2 Dielectrics for Nonvolatile Memory Application
142. Performance Enhancement of Amorphous In–Ga–Zn–O Thin Film Transistors with Partial Hetero-Junction Channel Layer
143. Resistive Switching in Amorphous GeSe-Based Resistive Random Access Memory
144. Improving Charge Trapping/Detrapping Characteristics of Amorphous In–Ga–ZnO Thin-Film-Transistors Using Microwave Irradiation
145. Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn–Sn–O ReRAMs
146. Effect of Microwave Annealing on the Interface Properties Between the Top Silicon and Buried Oxide Layers in Silicon-on-Insulator MOSFETs
147. Silicon-on-Insulator Double-Gate Ion-Sensitive Field-Effect Transistors Using Flexible Paper Substrate-Based Extended Gate for Cost-Effective Sensor Applications
148. Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device
149. Effects of Microwave Annealing on High-k Dielectric HfO2 Thin Films
150. Multistage Degradation Mechanisms in Cu(In, Ga)Se2 Photovoltaic Modules Prepared by Co-Evaporation: Toward High Performances and Enhanced Stability
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