101. Local oxidation of silicon surfaces by dynamic force microscopy: Nanofabrication and water bridge formation
- Author
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García, Ricardo, Calleja, M., Pérez Murano, Francesc, and American Physical Society
- Subjects
Kelvin probe force microscope ,Silicon ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Nanolithography ,Nanotechnology ,Conductive atomic force microscopy ,Local oxidation nanolithography ,Nanofabrication ,Surface oxidation ,Atomic force microscopy ,Chemical force microscopy ,Scanning voltage microscopy ,Oxidation ,Microscopy ,Optoelectronics ,LOCOS ,business ,Non-contact atomic force microscopy ,Surface dynamics - Abstract
3 pages, 4 figures., Local oxidation of silicon surfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. It is demonstrated that during the oxidation, tip and sample are separated by a gap of a few nanometers. The existence of a gap increases considerably the effective tip lifetime for performing lithography. A threshold voltage between the tip and the sample must be applied in order to begin the oxidation. The existence of a threshold voltage is attributed to the formation of a water bridge between tip and sample. It is also found that the oxidation kinetics is independent of the force microscopy mode used (contact or noncontact)., This work was supported financially by the Commission of the European Communities, ESPRIT Project 22955 (LASMEDS).
- Published
- 1998