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This note gives a description of the sensors that will be employed in the Inner Tracker of LHCb, and presents the results on sensor qualification for the pre-series production, manufactured by Hamamatsu Photonics.

This note gives a description of the sensors that will be employed in the Trigger Tracker station of LHCb, type CMS-OB2, and presents the quality assurance program followed by the Silicon Tracker group in order to ensure their functionality. The results on sensor qualification for a first batch of 100 sensors produced by ST Microelectronics are presented.

We present new measurements of the 7Be(p,γ)8B cross section from ‏‾Ecm = 116 to 2460 keV. Our new measurements lead to S17(0) = 22.1 ± 0.6(expt) ± 0.6(theor) eV b, where the central value is based on the theory of Descouvemont and Baye. We recommend a “best” value, S17(0) = 21.4 ± 0.5(expt) ± 0.6(theor) eV b, based on the mean of all modern direct measurements below the 1+ resonance.

We present new measurements of the ^7Be(p,gamma)^8B cross section from \bar{E}_{cm} = 116 to 2460 keV, that incorporate several improvements over our previously published experiment, also discussed here. Our new measurements lead to S_{17}(0) = 22.1 +- 0.6(expt) +- 0.6(theor) eV b based on data from \bar{E}_{cm} = 116 to 362 keV, where the central value is based on the theory of Descouvemont and Baye. The theoretical error estimate is based on the fit of 12 different theories to our low energy data. We compare our results to other S_{17}(0) values extracted from both direct (^7Be(p,gamma)^8B) and indirect (Coulomb dissociation and heavy-ion reaction) measurements, and show that the results of these 3 types of experiments are not mutually compatible. We recommend a "best" value, S_{17}(0) = 21.4 +- 0.5(expt) +- 0.6(theor) eV b, based on the mean of all modern direct measurements below the 1^+ resonance. We also present S-factors at 20 keV which is near the center of the Gamow window: the result of our measurements is S_{17}(20) = 21.4 +- 0.6(expt) +- 0.6(theor) eV b, and the recommended value is S_{17}(20) = 20.7 +- 0.5(expt) +- 0.6(theor) eV b., Comment: 22 pages, 20 figures

We have observed the breakup of the isobaric analog state at 11.193 MeV in 17F into three particles via three channels: proton decay to the α-unbound 9.585 MeV state in 16O; and α decay to the proton-unbound 2.365 and 3.502/3.547 MeV states in 13N. Laboratory α-particle spectra corresponding to these three modes have been generated in Monte Carlo simulations using single-channel, single- and multilevel R-matrix formulas. A fit of these spectra to the α spectrum resulting from a triple-coincidence measurement results in excellent agreement with the experimental spectrum and allows branching ratios to be deduced for these rare decay modes.

Levels in 22Mg between 4 and 7 MeV excitation energy have been populated in a high-resolution study of the 24Mg(p,t) 22Mg reaction. Two new states have been observed at energies Ex = 5090 and 6323 keV, while two states were observed at 5962 and 6046 keV. The precision in measured excitation energies for several other 22Mg levels has been improved substantially. In addition, a new state at 8141 keV was observed in 23Mg. Using spin and parity restrictions from the present and previous work, we discuss T = 1 analog state assignments of A = 22 nuclei below 7 MeV excitation energy. The implications for the rate of the stellar reaction 21Na(p, γ) 22Mg which takes part in hydrogen burning during nova outbursts are presented.

The β decay of 9C (T1/2 = 126.5 ms) has been studied in two experiments observing about 15 × 107 and 8 × 107 decays, respectively, at the TISOL facility at TRIUMF; different detector configurations were employed in the two experiments. In this first of two papers, the two experimental setups are described, as well as data analysis and a phenomenological approach to deducing branching ratios to and from states in 9B. In the experiments single spectra, and double and triple coincidence spectra, were recorded. Several states in 9B were observed; β-branching ratios to these states, and particle decay channels from these states, are reported. In particular, secondary decays into the 5Li and 8Be ground states were observed. With the inclusion of a considerable continuum and additional states, fair agreement with the reported 9Li logft values is found with a phenomenological approach for deducing the branching ratios. To extend the discussion, in a second, forthcoming paper, a multichannel, multistate R-matrix analysis of these data will be described.

We have studied the b-delayed particle decay of 17Ne to test the feasibility of determining both the E1 and E2 components of the 12C(a,g )16O cross section at energies relevant to helium burning in stars. In this context we have observed the breakup of the isobaric analog state in 17F at 11.193 MeV into three particles via three channels: proton decay to the 9.59 MeV state in 16O; and a decay to the 2.365 and 3.502/3.547 MeV states in 13N. This is the first reported observation of the decay of the IAS to the 12 state in 16O at 9.59 MeV and the first reported b-delayed proton-a decay. With straightforward improvements to our detection apparatus to improve angular resolution, b suppression, and solid angle coverage, we should be able to proceed to the measurement of the effect of the tail of the subthreshold state at 7.117 MeV in 16O on thea spectrum from the breakup of the 9.59 MeV state.

Because a knowledge of the 12C/16O ratio is crucial to the understanding of the later evolution of massive stars, new R- and K-matrix fits have been completed using the available angular distribution data from radiative α capture and elastic α scattering on 12C. Estimates of the total 12C(α,γ)16O rate at stellar energies are reported. In contrast with previous work, the analyses generally involve R- and K-matrix fits directly to the primary data, i.e., the energy- and angle-dependent differential yields, with all relevant partial waves fitted simultaneously (referred to here as surface fits). It is shown that, while the E1 part of the reaction is well constrained by a recent experiment on the β-delayed α-particle decay of 16N, only upper limits can be placed on the E2 ground state cross section factor which we take conservatively as SE2(300)

Existing experimental proton stripping reaction data on 25Mg leading to threshold states in 26Al are reinvestigated and reanalyzed in a consistent and improved manner. We use unbound state form factors in the DWBA analysis of the measured deuteron angular distributions to deduce absolute rather than relative proton partial widths. For higher-lying resonances these values are compared to widths obtained from (p,γ) work. It is also shown that several of the unique Jπ values assigned previously to 26Al states are erroneous. This paper reports on a reanalysis of spins, parities, and isospins for 26Al states located at Ex

Damage in thin (10 nm) oxide layers of metal-oxide-semiconductor varactor cells caused by exposures with ions, electrons, and X-rays has been electrically characterized by constant-current stress time-dependent dielectric breakdown and capacitance-voltage measurements. The time-dependent dielectric breakdown investigations show measurable damage if the ions (H+; 74 keV) are allowed to penetrate the resist (300 nm PMMA) and the poly-Si layer (250 nm) to reach the oxide. This is not the case if the ions (H2+; 74 keV) are stopped inside the poly-Si layer by use of a thicker (450 nm) resist. Also for electrons and X-rays the exposure with lithographic doses did not change the time-dependent dielectric breakdown curves. The capacitance-voltage measurements demonstrate that electrons and X-rays which do penetrate the gate oxide cause a flatband voltage shift of nearly 400 mV. This shift could not be observed if the H2+ ions were stopped in the poly-Si buffer layer. Ions seem to create no sec ondary effects like X-ray generation which reach beyond the penetration depth. The measurements were performed in the unannealed state to detect all possible damage effects including those which can be removed by annealing.