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101. Physical characterization of ultrathin high k dielectrics

102. Physcial characterization of ultrathin high k dielectrics

103. Critical metrology for ultrathin high k dielectrics

104. High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies

105. Physical characterisation of high-k gate stacks deposited on HF-last surfaces

106. Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon

107. ALD HfO2 surface preparation study

108. Characterisation of low energy antimony (2-5 keV) implantation into silicon

109. Profile Changes and Self-sputtering during Low Energy Ion Implantation

110. Channeling detection using position sensitive detectors

111. Advanced RBS analysis of thin films in micro-electronics

112. Epitaxial CoSi2 formation by a Cr or Mo interlayer

113. Advanced capabilities and applications of a sputter-RBS system

114. Comparative Growth Kinetics Of Sige In A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor And Anomalies During Growth of Thin Si Layers on Sige

115. Segregation of Cu on Etched and Non-Etched Al(Cu) Surface

116. ARIBA, an all round ion beam acquisition program

117. Compositional depth profiling of TaCN thin films

118. Process study of gadolinium aluminate atomic layer deposition fromthegadolinium tris-di-isopropylacetamidinate precursor

119. Degradation of 248 nm Deep UV Photoresist by Ion Implantation

121. MOCVD of NiO Thin Films Using Ni(dmamb)2

122. Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]

123. Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

124. Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium

125. Evaluation of GaAs Regrowth on A Novel GaAs/SiO2 Composite Surface On Silicon

126. Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium

128. InAsSb Photodiodes Grown on InAs, GaAs and Si Substrates by Molecular Beam Epitaxy

130. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

131. The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films

135. Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

136. Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors

137. Shallow Junction Ion Implantation in Ge and Associated Defect Control

138. Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition

139. A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates

140. Atomic layer deposition of hafnium oxide on germanium substrates

141. Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth

142. Microstructure and resistivity characterization of CuAu I superlattice formed in Cu∕Au thin films

143. Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth

144. Bulk Properties of MOCVD-Deposited HfO[sub 2] Layers for High k Dielectric Applications

145. Analysis of Selectively Grown Epitaxial Si[sub 1−x]Ge[sub x] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

146. Crystallization resistance of barium titanate zirconate ultrathin films from aqueous CSD: a study of cause and effect.

147. As-Deposited Superconducting Thin Films by Electron Cyclotron Resonance-Assisted Laser Ablation for Application in Micro-Electronics

148. LIGISOL: The Leuven ion guide isotope separator on-line

149. Present status and expected evolution of LISOL, the Leuven isotope separator on-line

150. Proposal for a new type of ion source: HECRISOL

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