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388 results on '"Bernier, N."'

101. Direct Observation of Proton Emission in Be11

Author

Ayyad, Y., primary, Olaizola, B., additional, Mittig, W., additional, Potel, G., additional, Zelevinsky, V., additional, Horoi, M., additional, Beceiro-Novo, S., additional, Alcorta, M., additional, Andreoiu, C., additional, Ahn, T., additional, Anholm, M., additional, Atar, L., additional, Babu, A., additional, Bazin, D., additional, Bernier, N., additional, Bhattacharjee, S. S., additional, Bowry, M., additional, Caballero-Folch, R., additional, Cortesi, M., additional, Dalitz, C., additional, Dunling, E., additional, Garnsworthy, A. B., additional, Holl, M., additional, Kootte, B., additional, Leach, K. G., additional, Randhawa, J. S., additional, Saito, Y., additional, Santamaria, C., additional, Šiurytė, P., additional, Svensson, C. E., additional, Umashankar, R., additional, Watwood, N., additional, and Yates, D., additional

Published
2019
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102. Shape coexistence in the neutron-deficient lead region: A systematic study of lifetimes in the even-even Hg188–200 with the GRIFFIN spectrometer at TRIUMF

Author

Olaizola, B., primary, Garnsworthy, A. B., additional, Ali, F. A., additional, Andreoiu, C., additional, Ball, G. C., additional, Bernier, N., additional, Bidaman, H., additional, Bildstein, V., additional, Bowry, M., additional, Caballero-Folch, R., additional, Dillmann, I., additional, Hackman, G., additional, Garrett, P. E., additional, Jigmeddorj, B., additional, Kilic, A. I., additional, MacLean, A. D., additional, Patel, H. P., additional, Saito, Y., additional, Smallcombe, J., additional, Svensson, C. E., additional, Turko, J., additional, Whitmore, K., additional, and Zidar, T., additional

Published
2019
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103. Correlative Analysis in the Semiconductor Industry

Author

Larson, DJ, primary, Prosa, TJ, additional, Martin, I, additional, Robbes, A-S, additional, Merkulov, A, additional, Bernier, N, additional, Delaye, V, additional, van der Heide, P, additional, Dulac, O, additional, Reinhard, DA, additional, and Ulfig, RM, additional

Published
2019
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104. TRIFIC: The TRIUMF Fast Ion Counter

Author

Chester, A., primary, Smallcombe, J., additional, Henderson, J., additional, Berean-Dutcher, J., additional, Bernier, N., additional, Bhattacharjee, S.S., additional, Garnsworthy, A.B., additional, Georges, S., additional, Gillespie, S.A., additional, Hackman, G., additional, Olaizola, B., additional, Paetkau, O., additional, Pearson, C.J., additional, Undseth, B., additional, and Yates, D., additional

Published
2019
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105. Isospin symmetry in B(E2) values: Coulomb excitation study of Mg21

Author

Ruotsalainen, P., primary, Henderson, J., additional, Hackman, G., additional, Sargsyan, G. H., additional, Launey, K. D., additional, Saxena, A., additional, Srivastava, P. C., additional, Stroberg, S. R., additional, Grahn, T., additional, Pakarinen, J., additional, Ball, G. C., additional, Julin, R., additional, Greenlees, P. T., additional, Smallcombe, J., additional, Andreoiu, C., additional, Bernier, N., additional, Bowry, M., additional, Buckner, M., additional, Caballero-Folch, R., additional, Chester, A., additional, Cruz, S., additional, Evitts, L. J., additional, Frederick, R., additional, Garnsworthy, A. B., additional, Holl, M., additional, Kurkjian, A., additional, Kisliuk, D., additional, Leach, K. G., additional, McGee, E., additional, Measures, J., additional, Mücher, D., additional, Park, J., additional, Sarazin, F., additional, Smith, J. K., additional, Southall, D., additional, Starosta, K., additional, Svensson, C. E., additional, Whitmore, K., additional, Williams, M., additional, and Wu, C. Y., additional

Published
2019
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106. Highly Sb-Rich Ge-Sb-Te Engineering in 4Kb Phase-Change Memory for High Speed and High Material Stability Under Cycling

Author

Navarro, G., primary, Sabbione, C., additional, Bernard, M., additional, Bourgeois, G., additional, Sandrini, J., additional, Castellani, N., additional, Cueto, O., additional, Garrione, J., additional, Cyrille, M. C., additional, Frei, M., additional, Nistor, L., additional, Bernier, N., additional, Fillot, F., additional, Nolot, E., additional, Socquet-Clerc, C., additional, Magis, T., additional, Laulagnet, F., additional, Pakala, M., additional, and Nowak, E., additional

Published
2019
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107. Outstanding Improvement in 4Kb Phase-Change Memory of Programming and Retention Performances by Enhanced Thermal Confinement

Author

Serra, A. L., primary, Cueto, O., additional, Castellani, N., additional, Sandrini, J., additional, Bourgeois, G., additional, Bernier, N., additional, Cyrille, M. C., additional, Garrione, J., additional, Bernard, M., additional, Beugin, V., additional, Andre, A., additional, Guerrero, J., additional, Navarro, G., additional, and Nowak, E., additional

Published
2019
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108. Shell evolution approaching the N=20 island of inversion: Structure of Mg29

Author

Matta, A., primary, Catford, W. N., additional, Orr, N. A., additional, Henderson, J., additional, Ruotsalainen, P., additional, Hackman, G., additional, Garnsworthy, A. B., additional, Delaunay, F., additional, Wilkinson, R., additional, Lotay, G., additional, Tsunoda, Naofumi, additional, Otsuka, Takaharu, additional, Knapton, A. J., additional, Ball, G. C., additional, Bernier, N., additional, Burbadge, C., additional, Chester, A., additional, Cross, D. S., additional, Cruz, S., additional, Diget, C. Aa., additional, Domingo, T., additional, Drake, T. E., additional, Evitts, L. J., additional, Garcia, F. H., additional, Hallam, S., additional, MacConnachie, E., additional, Moukaddam, M., additional, Muecher, D., additional, Padilla-Rodal, E., additional, Paetkau, O., additional, Park, J., additional, Pore, J. L., additional, Rizwan, U., additional, Smallcombe, J., additional, Smith, J. K., additional, Starosta, K., additional, Svensson, C. E., additional, Williams, J., additional, and Williams, M., additional

Published
2019
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109. β decay and β -delayed neutron decay of the N=82 nucleus In8249131

Author

Dunlop, R., primary, Svensson, C. E., additional, Andreoiu, C., additional, Ball, G. C., additional, Bernier, N., additional, Bidaman, H., additional, Bildstein, V., additional, Bowry, M., additional, Cross, D. S., additional, Dillmann, I., additional, Dunlop, M. R., additional, Garcia, F. H., additional, Garnsworthy, A. B., additional, Garrett, P. E., additional, Hackman, G., additional, Henderson, J., additional, Measures, J., additional, Mücher, D., additional, Olaizola, B., additional, Ortner, K., additional, Park, J., additional, Petrache, C. M., additional, Pore, J. L., additional, Smith, J. K., additional, Southall, D., additional, Ticu, M., additional, Turko, J., additional, Whitmore, K., additional, and Zidar, T., additional

Published
2019
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111. Matériaux à Changement de Phase : Mécanisme de Transition amorphe – cristalline et influence de l’épaisseur, l’exemple du GeTe

Author

Gallard, M., Amara, Mohamed, Mocuta, C., Putero, Magali, Escoubas, S., Guichet, C., Burles, N., Richard, Marie-Ingrid, Fellouh, L., Bernard, M., Chahine, R., Kowalczyk, P., Sabbione, C., André, A., Bernier, N., Kolb, A., Brenac, A., Morel, R., Hippert, F., Noé, P., Thomas, O., Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

112. Investigation of switching mechanism in HfO2-based oxide resistive memories by in-situ Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS)

Author

Dewolf, T., Cooper, D., Bernier, N., Delaye, V., Grenier, A., Grampeix, H., Charpin, C., Nardelli, F., Pauliac, S., Bernasconi, S., Jalaguier, E., Audoit, G., Schamm-Chardon, S., Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
HfO2-based resistive memories, EELS, switching, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], in situ TEM, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

114. Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

Author

Barraud, S., primary, Previtali, B., additional, Lapras, V., additional, Vizioz, C., additional, Hartmann, J.-M., additional, Martinie, S., additional, Lacord, J., additional, Casse, M., additional, Dourthe, L., additional, Loup, V., additional, Romano, G., additional, Rambal, N., additional, Chalupa, Z., additional, Bernier, N., additional, Audoit, G., additional, Jannaud, A., additional, Delaye, V., additional, Balan, V., additional, Rozeau, O., additional, Ernst, T., additional, and Vinet, M., additional

Published
2018
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118. Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Author

Reboh, S., primary, Coquand, R., additional, Barraud, S., additional, Loubet, N., additional, Bernier, N., additional, Audoit, G., additional, Rouviere, J.-L., additional, Augendre, E., additional, Li, J., additional, Gaudiello, J., additional, Gambacorti, N., additional, Yamashita, T., additional, and Faynot, O., additional

Published
2018
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119. Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

Author

Dewolf, T., additional, Cooper, D., additional, Bernier, N., additional, Delaye, V., additional, Grenier, A., additional, Grampeix, H., additional, Charpin, C., additional, Nardelli, F., additional, Pauliac, S., additional, Bernasconi, S., additional, Jalaguier, E., additional, Audoit, G., additional, and Schamm-Chardon, S., additional

Published
2017
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120. Half-lives of neutron-rich Cd 128-130

Author

Dunlop, R., Bildstein, V., Dillmann, I., Jungclaus, Andrea, Svensson, C.E., Andreoiu, C., Ball, G.C., Bernier, N., Bidaman, H., Boubel, P., Burbadge, C., Caballero-Folch, R., Turko, J., Zidar, T., Canada Research Chairs, Natural Sciences and Engineering Research Council of Canada, University of Guelph, Ministerio de Economía y Competitividad (España), National Science Foundation (US), Universidad Nacional Autónoma de México, Canada Foundation for Innovation, and Ministerio de Ciencia e Innovación (España)

Abstract

R. Dunlop et al. ; 6 págs.; 7 figs.; 1 tab. ; Rapid Communications, The β-decay half-lives of Cd128-130 have been measured with the newly commissioned GRIFFIN γ-ray spectrometer at the TRIUMF-ISAC facility. The time structures of the most intense γ rays emitted following the β decay were used to determine the half-lives of Cd128 and Cd130 to be T1/2=246.2(21) ms and T1/2=126(4) ms, respectively. The half-lives of the 3/2+ and 11/2- states of Cd129 were measured to be T1/2(3/2+)=157(8) ms and T1/2(11/2-)=147(3) ms. The half-lives of the Cd isotopes around the N=82 shell closure are an important ingredient in astrophysical simulations to derive the magnitude of the second r-process abundance peak in the A∼130 region. Our new results are compared with recent literature values and theoretical calculations. ©2016 American Physical Society, This work has been partially supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) and the Canada Research Chairs Program. I.D. and R.C.-F. are supported by NSERC Discovery Grants SAPIN-2014-00028 and RGPAS 462257-2014. A.J. acknowledges financial support by the Spanish Ministerio de Ciencia e Innovación under contract FPA2011-29854-C04 and the Spanish Ministerio de Economía y Competitividad under contract FPA2014- 57196-C5-4-P. S.L.T acknowledges financial support from the U.S. National Science Foundation under contract NSF- 14-01574. E.P.-R. acknowledges financial support from the DGAPA-UNAM under the PASPA program. The GRIFFIN spectrometer was funded by the Canada Foundation for Innovation, TRIUMF, and the University of Guelph. TRIUMF receives federal funding via a contribution agreement with the National Research Council of Canada.

Published
2016

121. High-precision half-life measurement for the superallowed Fermi β+ emitter Mg22

Author

Dunlop, M. R., primary, Svensson, C. E., additional, Ball, G. C., additional, Leslie, J. R., additional, Andreoiu, C., additional, Bernier, N., additional, Bidaman, H., additional, Bildstein, V., additional, Bowry, M., additional, Burbadge, C., additional, Caballero-Folch, R., additional, Varela, A. Diaz, additional, Dunlop, R., additional, Garnsworthy, A. B., additional, Garrett, P. E., additional, Hackman, G., additional, Jigmeddorj, B., additional, Leach, K. G., additional, MacLean, A. D., additional, Olaizola, B., additional, Measures, J., additional, Natzke, C., additional, Saito, Y., additional, Smith, J. K., additional, Turko, J., additional, and Zidar, T., additional

Published
2017
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122. Programming Current Reduction in GeS2+Sb2Te3 Based Phase-Change Memory

Author

Kluge, J., primary, Verdy, A., additional, Navarro, G., additional, Blonkowski, S., additional, Sousa, V., additional, Kowalczyk, P., additional, Bernard, M., additional, Bernier, N., additional, Bourgeois, G., additional, Castellani, N., additional, Noé, P., additional, Nowak, E., additional, and Perniola, L., additional

Published
2017
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123. Stacked-Wires FETs for Advanced CMOS Scaling

Author

Barraud, S., primary, Lapras, V., additional, Samson, M.P., additional, Previtali, B., additional, Hartmann, J.M., additional, Rambal, N., additional, Vizioz, C., additional, Loup, V., additional, Comboroure, C., additional, Triozon, F., additional, Bernier, N., additional, Cooper, D., additional, and Vinet, M., additional

Published
2017
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127. First Results from Griffin Including The Half-lives Of 128-130Cd

Author

Dunlop, Ryan, primary, Bildstein, V., additional, Dillmann, I., additional, Jungclaus, A., additional, Svensson, C. E., additional, Andreoiu, C., additional, Ball, G C., additional, Bernier, N., additional, Bidaman, H., additional, Boubel, P., additional, Burbadge, C., additional, Caballero-Folch, R., additional, Dunlop, M. R., additional, Evitts, L. J., additional, Garcia, F., additional, Garnsworthy, A. B., additional, Garrett, P. E., additional, Hackman, G., additional, Hallam, S., additional, Henderson, J., additional, Ilyushkin, S., additional, Kisliuk, D., additional, Krücken, R., additional, Lassen, J., additional, Li, R., additional, MacConnachie, E., additional, MacLean, A. D., additional, McGee, E., additional, Moukaddam, M., additional, Olaizola, B., additional, Padilla-Rodal, E., additional, Park, J., additional, Paetkau, O., additional, Petrache, C., additional, Pore, J. L., additional, Radich, A. J., additional, Ruotsalainen, P., additional, Smallcombe, J., additional, Smith, J., additional, Tabor, S. L., additional, Teigelhöfer, A., additional, Turko, J., additional, and Zidar, T., additional

Published
2017
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128. A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology

Author

Berthelon, R., primary, Andrieu, F., additional, Perreau, P., additional, Cooper, D., additional, Roze, F., additional, Gourhant, O., additional, Rivallin, P., additional, Bernier, N., additional, Cros, A., additional, Ndiaye, C., additional, Baylac, E., additional, Souchier, E., additional, Dutartre, D., additional, Claverie, A., additional, Weber, O., additional, Josse, E., additional, Vinet, M., additional, and Haond, M., additional

Published
2016
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129. Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Author

Barraud, S., primary, Lapras, V., additional, Samson, M.P., additional, Gaben, L., additional, Grenouillet, L., additional, Maffini-Alvaro, V., additional, Morand, Y., additional, Daranlot, J., additional, Rambal, N., additional, Previtalli, B., additional, Reboh, S., additional, Tabone, C., additional, Coquand, R., additional, Augendre, E., additional, Rozeau, O., additional, Hartmann, J. M., additional, Vizioz, C., additional, Arvet, C., additional, Pimenta-Barros, P., additional, Posseme, N., additional, Loup, V., additional, Comboroure, C., additional, Euvrard, C., additional, Balan, V., additional, Tinti, I., additional, Audoit, G., additional, Bernier, N., additional, Cooper, D., additional, Saghi, Z., additional, Allain, F., additional, Toffoli, A., additional, Faynot, O., additional, and Vinet, M., additional

Published
2016
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131. 2D TCAD strain simulations from fully depleted to nanowire transistors: efficiency of mechanical stressors

Author

Idrissi-El Oudrhiri, A., Martinie, S., Barbé, Jean-Charles, Jaud, Marie-Anne, Lacord, Joris, Bernier, N, Rivallin, Pierrette, Pelloux-Prayer, J., Casse, Mikael, Mouis, Mireille, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), M. Mouis, O. Thomas, E. Zschech, C. Paitel, Ducroquet, Frédérique, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMethodologies_GENERAL, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

session poster; International audience

Published
2015

132. Advances at TRIUMF-ISAC and decay of neutron-rich Cd studied with GRIFFIN.

Author

Köster, U., Garrett, P.E., Bernier, N., Dunlop, R., MacLean, A.D., Bildstein, V., Dillmann, I., Jungclaus, A., Svensson, C.E., Andreoiu, C., Ball, G.C., Bidaman, H., Boubel, P., Burbadge, C., Caballero-Folch, R., Dunlop, M.R., Evitts, L.J., Garcia, F., Garnsworthy, A.B., and Hackman, G.

Subjects
CADMIUM, RADIOACTIVE decay, METASTABLE states, GROUND state energy, DELAYED neutrons
Abstract

The β-decay half lives of nuclei near the r-process path are critical information required for abundance calculations, especially those near neutron number N = 82. Specifically, the nuclei below doubly-magic 132Sn are key, and play an important role in the formation and shape of the second r-process abundance peak. The half lives in this region are challenging to measure due to the significant β-delayed neutron decay branches and the population of isomeric states with half lives comparable to the ground states. However, by measuring the time distribution of γ rays, these complications can be eliminated. This requires, however, a very effcient γ-ray spectrometer since the production of isotopes in this region is very limited. The new GRIFFIN array at TRIUMF-ISAC provides the high effciency required for these measurements. Recent improvements in the quality of the beams produced at TRIUMF, employing the IG-LIS device, are outlined, as well as the current status of the ARIEL facility. The GRIFFIN spectrometer and its use are briefly described. The experiment to measure the half lives of 128-130Cd is outlined and the results given, and some examples of the power of GRIFFIN to expand decay schemes, specifically for the decay of 128Cd to 128In, are given. [ABSTRACT FROM AUTHOR]

Published
2018

134. Neuroendocrine-immune interactions in teleost fish

Author

Verburg-van Kemenade, B.M.L., Stolte, E.H., Metz, J.R., Chadzinska, M., Bernier, N. J., Kraak, G., Farrel, A. P., Brauner, C.J., Bernier, N. J., Kraak, G., Farrel, A. P., and Brauner, C.J.

Subjects
Cell Biology and Immunology, WIAS, Fish Neuronendocrinology, Life Science, Celbiologie en Immunologie, Organismal Animal Physiology
Abstract

Contains fulltext : 75409.pdf (Publisher’s version ) (Closed access)

Published
2009

136. Influence of Low Thermal Budget Plasma Oxidation and Millisecond Laser Anneal on Gate Stack Reliability in view of 3D Sequential Integration

Author

Lu, C.-M.V., primary, Fenouillet-Béranger, C., additional, Gassilloud, R., additional, Graoui, H., additional, Larmagnac, D., additional, Sharma, S., additional, Garros, X., additional, Leroux, C., additional, Toffoli, A., additional, Romano, G., additional, Kies, R., additional, Rambal, N., additional, Samson, M.-P., additional, Previtali, B., additional, Guedj, C., additional, Bernier, N., additional, Kerdiles, S., additional, Brunet, L., additional, Batude, P., additional, Skotnicki, T., additional, and Vinet, M., additional

Published
2016
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137. -Gate Nanowire P-FET with cSiGe Channel Epitaxied on Strained-SOI Substrates

Author

Nguyen, P., primary, Barraud, S., additional, Casse, M., additional, Pelloux-Prayer, J., additional, Tabone, C., additional, Hartmann, J.-M., additional, Arvet, C., additional, Bernier, N., additional, Hutin, L., additional, Ecarnot, L., additional, Maleville, C., additional, Nguyen, B.-Y., additional, Mazure, C., additional, Faynot, O., additional, and Vinet, M., additional

Published
2016
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138. Half-lives of neutron-richCd128–130

Author

Dunlop, R., primary, Bildstein, V., additional, Dillmann, I., additional, Jungclaus, A., additional, Svensson, C. E., additional, Andreoiu, C., additional, Ball, G. C., additional, Bernier, N., additional, Bidaman, H., additional, Boubel, P., additional, Burbadge, C., additional, Caballero-Folch, R., additional, Dunlop, M. R., additional, Evitts, L. J., additional, Garcia, F., additional, Garnsworthy, A. B., additional, Garrett, P. E., additional, Hackman, G., additional, Hallam, S., additional, Henderson, J., additional, Ilyushkin, S., additional, Kisliuk, D., additional, Krücken, R., additional, Lassen, J., additional, Li, R., additional, MacConnachie, E., additional, MacLean, A. D., additional, McGee, E., additional, Moukaddam, M., additional, Olaizola, B., additional, Padilla-Rodal, E., additional, Park, J., additional, Paetkau, O., additional, Petrache, C. M., additional, Pore, J. L., additional, Radich, A. J., additional, Ruotsalainen, P., additional, Smallcombe, J., additional, Smith, J. K., additional, Tabor, S. L., additional, Teigelhöfer, A., additional, Turko, J., additional, and Zidar, T., additional

Published
2016
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139. Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

Author

David, S., primary, Roque, J., additional, Rochat, N., additional, Bernier, N., additional, Piot, L., additional, Alcotte, R., additional, Cerba, T., additional, Martin, M., additional, Moeyaert, J., additional, Bogumilowizc, Y., additional, Arnaud, S., additional, Bertin, F., additional, Bassani, F., additional, and Baron, T., additional

Published
2016
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140. N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory

Author

Navarro, G., primary, Sousa, V., additional, Noe, P., additional, Castellani, N., additional, Coue, M., additional, Kluge, J., additional, Kiouseloglou, A., additional, Sabbione, C., additional, Persico, A., additional, Roule, A., additional, Cueto, O., additional, Blonkowski, S., additional, Fillot, F., additional, Bernier, N., additional, Annunziata, R., additional, Borghi, M., additional, Palumbo, E., additional, Zuliani, P., additional, and Perniola, L., additional

Published
2016
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142. Opportunities and challenges of nanowire-based CMOS technologies

Author

Barraud, S., primary, Casse, M., additional, Gaben, L., additional, Nguyen, P., additional, Hartmann, J. M., additional, Samson, M. P., additional, Maffini-Alvaro, V., additional, Tabone, C., additional, Vizioz, C., additional, Arvet, C., additional, Pimenta-Barros, P., additional, Glowacki, F., additional, Bernier, N., additional, Rozeau, O., additional, Jaud, M. A., additional, Martinie, S., additional, Laccord, J., additional, Allain, F., additional, De Salvo, B., additional, and Vinet, M., additional

Published
2015
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143. A New Method to Induce Local Tensile Strain in SOI Wafers: First Strain Results of the "BOX Creep" Technique

Author

Bonnevialle, A., primary, Royer, C.Le, additional, Morand, Y., additional, Reboh, S., additional, Pedini, J.M., additional, Roule, A., additional, Marseilhan, D., additional, Besson, P., additional, Rouchon, D., additional, Bernier, N., additional, Tabone, C., additional, Plantier, C., additional, Grenouillet, L., additional, and Vinet, M., additional

Published
2015
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144. Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond

Author

Oudrhiri, A. Idrissi-El, primary, Martinie, S., additional, Barbe, J-C., additional, Rozeau, O., additional, Le Royer, C., additional, Jaud, M-A., additional, Lacord, J., additional, Bernier, N., additional, Grenouillet, L., additional, Rivallin, P., additional, Pelloux-Prayer, J., additional, Casse, M., additional, and Mouis, M., additional

Published
2015
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147. High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

Author

Pasini, L., primary, Batude, P., additional, Casse, M., additional, Mathieu, B., additional, Sklenard, B., additional, Luce, F. Piegas, additional, Reboh, S., additional, Bernier, N., additional, Tabone, C., additional, Rozeau, O., additional, Martini, S., additional, Fenouillet-Beranger, C., additional, Brunet, L., additional, Audoit, G., additional, Lafond, D., additional, Aussenac, F., additional, Allain, F., additional, Romano, G., additional, Barraud, S., additional, Rambal, N., additional, Barral, V., additional, Hutin, L., additional, Hartmann, J-M., additional, Besson, P., additional, Kerdiles, S., additional, Haond, M., additional, Ghibaudo, G., additional, and Vinet, M., additional

Published
2015
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148. A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration

Author

Maitrejean, S., primary, Loubet, N., additional, Augendre, E., additional, Morin, P. F., additional, Reboh, S., additional, Bernier, N., additional, Wacquez, R., additional, Lherron, B., additional, Bonnevialle, A., additional, Liu, Q., additional, Hartmann, J.-M., additional, He, H., additional, Halimaoui, A., additional, Li, J., additional, Pilorget, S., additional, Kanyandekwe, J., additional, Grenouillet, L., additional, Chafik, F., additional, Morand, Y., additional, Le Royer, C., additional, Faynot, O., additional, Celik, M., additional, Doris, B., additional, and de Salvo, B., additional

Published
2015
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150. Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration

Author

Maitrejean, S., primary, Loubet, N., additional, Augendre, E., additional, Morin, P., additional, Reboh, S., additional, Bernier, N., additional, Wacquez, R., additional, Lherron, B., additional, Bonnevialle, A., additional, Liu, Q., additional, Hartmann, J. M., additional, He, H., additional, Halimaoui, A., additional, Li, J., additional, Pilorget, S., additional, Kanyandekwe, J., additional, Grenouillet, L., additional, Chafik, F., additional, Morand, Y., additional, Royer, C. Le, additional, Faynot, O., additional, Celik, M., additional, Doris, B., additional, and De Salvo, B., additional

Published
2015
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