137 results on '"Anwar Jarndal"'
Search Results
102. On designing of a broadband GaN low-noise amplifier for WiMax applications
- Author
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Amer M. Bassal and Anwar Jarndal
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Physics ,chemistry.chemical_compound ,chemistry ,Noise measurement ,Electronic engineering ,Impedance matching ,Linearity ,Maximum power transfer theorem ,Gallium nitride ,Cascode ,Noise figure ,Low-noise amplifier - Abstract
This paper reports a design of a Cascode GaN Low Noise Amplifier (LNA) with independent biasing and inter-stage matching. The HEMTs are in a cascode configuration and they are independently biased with an inter-stage matching network. The CS stage is biased for a minimum noise figure (NF) and the CG stage is biased for a maximum linearity. The inter-stage matching is then maximizing the power transfer between the two stages. The LNA provided a gain of 13.5 dB with a NF less than 3dB from 2.9 to 3.7 GHz. The OIP3 is only 25 dBm with a power consumption of 2.92W.
- Published
- 2017
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103. An improved reliable PSO based parameter extraction method applied to GaN HEMTs for mm-Wave applications
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Ahmed S. Hussein and Anwar Jarndal
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Materials science ,Reliability (computer networking) ,Transistor ,Extraction (chemistry) ,Gallium nitride ,Solid modeling ,Capacitance ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Scattering parameters ,Range (statistics) ,Electronic engineering - Abstract
An improved and efficient parameter extraction method applied to GaN high electron mobility transistors (HEMTs) is presented. The aim is to extract reliable values for the generally distributed small-signal model to accurately describe the device at mm-wave range. A modified version of hybrid extraction technique combining particle-swarm-optimization and direct fitting has been implemented. S-parameters fitting has been used to validate the model under various bias conditions. The results indicate a very good agreement between model and simulation up to 60 GHz.
- Published
- 2017
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104. On the performance of artificial neural network with sine-cosine algorithm in forecasting electricity load demand
- Author
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Imad Alsyouf, Shaikha Binkhatim, Anwar Jarndal, and Sadeque Hamdan
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Data set ,Mathematical optimization ,Electric power system ,Artificial neural network ,Computer science ,Genetic algorithm ,Benchmark (computing) ,Range (statistics) ,Swarm behaviour ,Data modeling - Abstract
To achieve safe and optimal planning and operations of power systems there is a need for using more efficient methods for peak load forecasting. This paper demonstrates the application of sine-cosine algorithm (SCA) for training artificial neural network (ANN) in the problem of load forecasting. The data used in this study were collected over three years, i.e. 20142016, for the day, temperature, relative humidity, electricity load demand. The data set was split into weekdays and weekends and the last year data was kept for testing the trained weights. Genetic algorithm (GA) is used to benchmark the results of SCA. The analysis results show that SCA and GA have good performance and provide good fitting for the trained data and good forecast; however, GA still outperform SCA under the same test conditions. Further improvement could be obtained by combining SCA with another swarm technique to solve wider range of forecasting problems.
- Published
- 2017
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105. On hybrid model parameter extraction of GaN HEMTs based on GA, PSO, and ABC optimization
- Author
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Anwar Jarndal and Ahmed S. Hussein
- Subjects
chemistry.chemical_compound ,chemistry ,Robustness (computer science) ,Computer science ,Reliability (computer networking) ,Genetic algorithm ,Convergence (routing) ,Particle swarm optimization ,Context (language use) ,Gallium nitride ,Solid modeling ,Algorithm - Abstract
This paper presents a comparison between different optimization techniques in the context of hybrid small-signal model (SSM) parameter extraction for GaN High Electron Mobility Transistors (HEMTs). The optimization techniques considered in this work are: Genetic Algorithm (GA), Particle Swarm Optimization (PSO), and Artificial Bee Colony (ABC). The algorithms were tested for their robustness, convergence speed, and efficiency. PSO algorithm was shown to be the most suitable in terms of robustness and efficiency. However, all techniques were able to obtain credible model parameters, which confirms the reliability of the adopted procedure. The quality of extraction was evaluated by means of S-parameter fitting at different bias conditions.
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- 2017
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106. A two stage green supplier selection and order allocation using AHP and multi-objective genetic algorithm optimization
- Author
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Sadeque Hamdan and Anwar Jarndal
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Mathematical optimization ,021103 operations research ,Linear programming ,Computer science ,media_common.quotation_subject ,0211 other engineering and technologies ,Analytic hierarchy process ,02 engineering and technology ,Purchasing ,Genetic algorithm ,0202 electrical engineering, electronic engineering, information engineering ,020201 artificial intelligence & image processing ,Resource management ,Quality (business) ,Representation (mathematics) ,Selection (genetic algorithm) ,media_common - Abstract
Green supplier selection and order allocation problem involves multi-criteria decisions. In this paper, the available suppliers are ranked based on selected green criteria by decision makers in the purchasing department using analytic hierarchy process (AHP). Then, genetic algorithm (GA), that uses real-coded representation chromosomes, is used to find the optimal solution for the multi-objective integer linear programming model. The model deals with three conflicting objectives which are: total purchasing cost (TCP), total green value of purchasing (TGVP) and total rejected item due to quality (TR). The model is illustrated by a numerical example.
- Published
- 2017
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107. Optimizing the parameters of a biodynamic responses to vibration model using Particle Swarm and Genetic Algorithms
- Author
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Anwar Jarndal, Sadeque Hamdan, and Naser Nawayseh
- Subjects
Engineering ,Mathematical optimization ,021103 operations research ,Meta-optimization ,Mean squared error ,business.industry ,0211 other engineering and technologies ,Particle swarm optimization ,02 engineering and technology ,01 natural sciences ,Human-body model ,0103 physical sciences ,Genetic algorithm ,Multi-swarm optimization ,business ,010301 acoustics ,Algorithm ,Metaheuristic ,Interior point method - Abstract
Various local optimization techniques such as Interior Point Algorithm have been widely used to optimize the parameters of models representing biodynamic responses to vibration. The quality of the obtained solutions depends on the initial guesses. This paper presents a comparison between the performance of Particle Swarm Optimization and Genetic Algorithm in optimizing the parameters of a human body model, where these techniques do not require initial guesses. The model represents the vertical apparent mass and the fore-and-aft cross-axis apparent mass of the seated human body during vertical excitation. With both optimization methods, the model provided close fits to the moduli and phases for both median data and the responses of 12 individual subjects. However, it was noted that using PSO provided a better solution with less mean error than GA and a faster solution in most of the cases.
- Published
- 2017
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108. Forecasting of peak electricity demand using ANNGA and ANN-PSO approaches
- Author
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Anwar Jarndal and Sadeque Hamdan
- Subjects
Engineering ,Mathematical optimization ,Artificial neural network ,Electrical load ,business.industry ,020209 energy ,Load forecasting ,02 engineering and technology ,Field (computer science) ,Data modeling ,Electric power system ,0202 electrical engineering, electronic engineering, information engineering ,Train ,Electricity ,business ,Simulation - Abstract
Electrical load forecasting is essential in the field of power systems to enhance the operation and economical utilization In this paper, a combined approaches of artificial neural networks (ANN) with particle-swarm-optimization (PSO) and genetic algorithm optimization (GA) for short and mid-term load forecasting is developed. The model identifies the relationship among load, temperature and humidity using a case study of Sharjah City in United Arab Emirates. The ANN model trains the hourly peak load data for a set of days and then forecasts the load for next day. Actual data obtained from Sharjah Electricity and Water Authority (SEWA) is used to validate the results.
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- 2017
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109. AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective
- Author
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Anwar Jarndal
- Subjects
Materials science ,business.industry ,Semiconductor device modeling ,High-electron-mobility transistor ,Substrate (electronics) ,Thermal conduction ,Computer Graphics and Computer-Aided Design ,Computer Science Applications ,Reliability (semiconductor) ,Signal modeling ,Electronic engineering ,Equivalent circuit ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Microwave - Abstract
In this article, small-signal modeling approaches for GaN HEMTs on SiC and Si substrates have been developed. The main advantage of these approaches is their accuracy, reliability, and dependency on only cold S-parameter measurements to extract the parasitic elements of the device. The proposed equivalent circuit model for GaN on Si HEMT considers extra effects due to parasitic conduction through substrate or buffer layers. S-parameter measurements at different bias conditions in addition to physical based analysis have been used to validate the accuracy and reliability of the developed modeling methods. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:389-400, 2014.
- Published
- 2013
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110. Design and implementation of a sign-to-speech/text system for deaf and dumb people
- Author
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Shahrazad Abdulla, Anwar Jarndal, Dalal Abdulla, and Rameesa Manaf
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Engineering ,American Sign Language ,Multimedia ,business.industry ,Arabic ,Sign (semiotics) ,Sign language ,computer.software_genre ,language.human_language ,Whole systems ,Microcontroller ,Gesture recognition ,Assistive technology ,language ,business ,computer - Abstract
This paper presents an approach for designing and implementing a smart glove for deaf and dumb people. There have been several researches done in order to find an easier way for non-vocal people to communicate with vocal people and express themselves to the hearing world. Developments have been made in sign language but mainly in American Sign Language. This research aims to develop a sign to Arabic language translator based on smart glove interfaced wirelessly with microcontroller and text/voice presenting devices. An approach has been developed and programmed to display Arabic text. The whole system has been implemented, programmed, cased and tested with very good results.
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- 2016
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111. Design and implementation of a multi-purpose wireless charger
- Author
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Anwar Jarndal and Ahmed R. Babikir
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Engineering ,SIMPLE (military communications protocol) ,010308 nuclear & particles physics ,business.industry ,Voltage control ,Transmitter ,Electrical engineering ,01 natural sciences ,Receiver coil ,0103 physical sciences ,Coupling efficiency ,Electronic engineering ,Wireless ,Colpitts oscillator ,010306 general physics ,business ,Mobile device - Abstract
In this paper, a multi-purpose wireless charger design and implementation procedure is presented. A simple design based on Colpitts oscillator has been used to implement the transmitter side. The structure of the receiver coil has been optimized to improve the coupling efficiency. The system has been fabricated, cased and tested with different mobile devices and tablets.
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- 2016
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112. GaN low noise amplifier design for WiMax applications
- Author
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Anwar Jarndal and Amer M. Bassal
- Subjects
Engineering ,business.industry ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,Transistor ,Electrical engineering ,Impedance matching ,Linearity ,020206 networking & telecommunications ,02 engineering and technology ,Noise figure ,Low-noise amplifier ,law.invention ,law ,Logic gate ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Output impedance ,business - Abstract
This paper presents a design for 1–6 GHz low noise amplifier (LNA) based on cascade GaN HEMTs with LC ladder input matching and stabilizing output impedance. The designed LNA is simulated using Advanced Design Software (ADS) based on a commercial packaged transistor from Cree Inc. The LNA shows a maximum noise figure of 2.95 dB in the 1–6 GHz range with a gain of 14 dB. It also has a maximum S 11 of −2.4 dB, an input IP3 of 29.4dBm and is unconditionally stable over the whole bandwidth while drawing 13 Watts of DC power. The designed LNA also shows high linearity with more than 60 dBc carrier-to-intermediation distortion.
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- 2016
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113. Reliable particle-swarm-optimization based parameter extraction method applied to GaN HEMTs
- Author
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Ahmed S. Hussein and Anwar Jarndal
- Subjects
010302 applied physics ,Materials science ,Transistor ,Extraction (chemistry) ,Particle swarm optimization ,020206 networking & telecommunications ,Gallium nitride ,02 engineering and technology ,Solid modeling ,01 natural sciences ,Capacitance ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Scattering parameters ,Electronic engineering ,Reliability (statistics) - Abstract
This paper presents an efficient parameter extraction method applied to GaN high electron mobility transistors (HEMTs) for mm-wave applications. The procedure is based on S-parameters measurements at cold bias condition to extract the extrinsic parameters of a 19-element small-signal model. Hybrid technique of particle-swarm-optimization and direct fitting has been developed and implemented. The extraction procedure has been optimized to consider measurements uncertainty and improve the reliability of the extraction. The model has been validated by S-parameters measurements at different bias conditions and wide frequency range. A very good agreement between simulations and measurements has been obtained.
- Published
- 2016
- Full Text
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114. Genetic algorithm-based neural-network modeling approach applied to AlGaN/GaN devices
- Author
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Anwar Jarndal
- Subjects
Engineering ,Artificial neural network ,business.industry ,High-electron-mobility transistor ,computer.software_genre ,Computer Graphics and Computer-Aided Design ,Computer Science Applications ,Power (physics) ,Harmonics ,Electronic engineering ,Equivalent circuit ,Computer Aided Design ,Electrical and Electronic Engineering ,business ,computer ,Microwave ,Intermodulation - Abstract
An accurate equivalent circuit large-signal model (ECLSM) for AlGaN-GaN high electron mobility transistor (HEMT) is presented. The model is derived from a distributed small-signal model that efficiently describes the physics of the device. A genetic neural-network-based model for the gate and drain currents and charges is presented along with its parameters extraction procedure. This model is embedded in the ECLSM, which is then implemented in CAD software and validated by pulsed and continuous large-signal measurements of on-wafer 8 × 125-μm GaN on SiC substrate HEMT. Pulsed IV simulations show that the model can efficiently describe the bias dependency of trapping and self-heating effects. Single- and two-tone simulation results show that the model can accurately predict the output power and its harmonics and the associated intermodulation distortion (IMD) under different input-power and bias conditions. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.
- Published
- 2012
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115. Wideband Modeling of Land-Mobile-Satellite Channel in Built-Up Environment
- Author
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Yousef Hulba, Anwar Jarndal, Mohammed S. Al Salameh, and Anwar Alsaqaf
- Subjects
Computer science ,business.industry ,Wave propagation ,MIMO ,Uniform theory of diffraction ,Bandwidth (signal processing) ,Electrical engineering ,Radio propagation model ,Electronic engineering ,Bit error rate ,Wideband ,business ,Multipath propagation ,Computer Science::Information Theory - Abstract
This paper presents a propagation model for land-mobile-satellite (LMS) wideband radio channel in built-up environment. The model characterizes the behavior of the radio channel, under shadowing and multipath effects due to buildings, with variation of the elevation angle of the satellite. The wideband parameters (coherent bandwidth and time delay spreading) for LMS channel, in residential and urban environments, are computed. These parameters can be considered as a measure of the amount of ISI (inter-symbol interference) of the radio channel, which distorts the received signal and accordingly increases the bit error rate. The calculated values for these parameters using our model, show very good agreement with the corresponding measured ones, which accordingly shows the validity of the developed model for radio channel design in satellite mobile communication systems.
- Published
- 2012
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116. Improved Modeling of GaN HEMTs on Si Substrate for Design of RF Power Amplifiers
- Author
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Asdesach Zena Markos, Anwar Jarndal, and Gunter Kompa
- Subjects
Radiation ,Materials science ,business.industry ,Amplifier ,RF power amplifier ,Semiconductor device modeling ,Gallium nitride ,High-electron-mobility transistor ,Condensed Matter Physics ,Nonlinear system ,chemistry.chemical_compound ,chemistry ,Logic gate ,Electronic engineering ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Microwave - Abstract
An improved large-signal modeling approach of GaN on Si devices for RF high-power applications is presented. This approach accounts for the parasitic buffer loading effect under microwave RF operation in addition to the self-heating and trap ping effects associated with high-power operation conditions. A hybrid optimization (genetic and Simplex) technique based procedure is used to determine the optimal values of the model extrinsic elements. These elements are de-embedded from multibias S-parameter measurements to find the intrinsic part of the device, which is then used to construct a nonlinear current-charge (represented by nonlinear charge and current sources) based model for the gate current of the device. Pulsed and static dc IV characteristics are used for modeling of the drain current. The validity of the developed modeling approach is verified by comparing simulated large-signal single- and two-tone simulation with measured data of a 2-mm (10 × 200 μm) GaN HEMT on Si substrate. The model has been employed for designing a class-AB power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.
- Published
- 2011
- Full Text
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117. Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design
- Author
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Renato Negra, Anwar Jarndal, Ammar B. Kouki, Pouya Aflaki, and Fadhel M. Ghannouchi
- Subjects
Engineering ,business.industry ,Amplifier ,Transistor ,Electrical engineering ,Inverse ,High-electron-mobility transistor ,computer.software_genre ,Computer Graphics and Computer-Aided Design ,Radio frequency power transmission ,Computer Science Applications ,Power (physics) ,law.invention ,law ,Electronic engineering ,Computer Aided Design ,Electrical and Electronic Engineering ,business ,computer ,Microwave - Abstract
A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT, and the developed model is validated by comparing its small- and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F PA. Very good agreement between the amplifier simulation and measurement shows the validity of the model. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011. © 2011 Wiley Periodicals, Inc.
- Published
- 2010
- Full Text
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118. Modeling of extrinsic parasitic elements of Si based GaN HEMTs using two step de-embedding structures
- Author
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Ammar B. Kouki, Riadh Essaadali, Fadhel M. Ghannouchi, and Anwar Jarndal
- Subjects
Materials science ,Silicon ,business.industry ,Transistor ,Extraction (chemistry) ,Semiconductor device modeling ,chemistry.chemical_element ,Gallium nitride ,Hardware_PERFORMANCEANDRELIABILITY ,High-electron-mobility transistor ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Hardware_INTEGRATEDCIRCUITS ,Embedding ,Optoelectronics ,Equivalent circuit ,business - Abstract
A new parasitic elements extraction technique for GaN HEMT transistors on Si substrate is presented. This technique is based on the use of two de-embedding GaN structures: open and thru-short. The equivalent circuit models along with the extraction procedure are detailed. A very good agreement between measurements and simulations validate the developed extraction method.
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- 2015
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119. A general and reliable model for GaN HEMTs on Si and SiC substrates
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Anwar Jarndal, Riadh Essaadali, and Ammar B. Kouki
- Subjects
chemistry.chemical_compound ,Reliability (semiconductor) ,Materials science ,chemistry ,business.industry ,Scattering parameters ,Optoelectronics ,Gallium nitride ,High-electron-mobility transistor ,business ,Capacitance - Abstract
In this paper a reliable and cost-effective modeling approach for GaN HEMT on both Si and SiC substrates is presented. The developed model is validated in terms of small-and large-signal simulations for 2-mm GaN-on-Si and 1-mm GaN-on-SiC HEMTs.
- Published
- 2015
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120. A new small-signal modeling approach applied to GaN devices
- Author
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Gunter Kompa and Anwar Jarndal
- Subjects
Engineering ,Radiation ,business.industry ,Estimation theory ,Transistor ,Semiconductor device modeling ,Gallium nitride ,High-electron-mobility transistor ,Condensed Matter Physics ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Electronic engineering ,Range (statistics) ,Scattering parameters ,Equivalent circuit ,Electrical and Electronic Engineering ,business ,Algorithm - Abstract
A new small-signal modeling approach applied to GaN-based devices is presented. In this approach, a new method for extracting the parasitic elements of the GaN device is developed. This method is based on two steps, which are: 1) using cold S-parameter measurements, high-quality starting values for the extrinsic parameters that would place the extraction close to the global minimum of the objective function for the distributed equivalent circuit model are generated and 2) the optimal model parameter values are searched through optimization using the starting values already obtained. The bias-dependent intrinsic parameter extraction procedure is improved for optimal extraction. The validity of the developed modeling approach and the proposed small-signal model is verified by comparing the simulated wide-band small-signal S-parameter, over a wide bias range, with measured data of a 0.5-/spl mu/m GaN high electron-mobility transistor with a 2/spl times/50 /spl mu/m gatewidth.
- Published
- 2005
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121. GaN power amplifiers design using genetic neural network model
- Author
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Rashid H. Al-Ali, Anwar Jarndal, and Omar A. Alhammadi
- Subjects
Power-added efficiency ,Computer science ,Amplifier ,Transistor ,RF power amplifier ,Gallium nitride ,High-electron-mobility transistor ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Electronic engineering ,Linear amplifier ,Instrumentation amplifier ,Feedback linearization ,Direct-coupled amplifier - Abstract
A genetic neural network based large-signal model for GaN HEMT transistor suitable for designing power amplifiers (PAs) is presented. The model has been demonstrated by designing linear power efficient amplifier. Two different approaches have been followed. The first approach is based on linear class AB amplifier with Doherty efficiency enhancement technique. The second approach depends on high efficiency switching-mode amplifier with simple feedback linearization.
- Published
- 2015
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122. Parasitic elements extraction of AlGaN/GaN HEMTs on SiC substrate using only pinch-off S-parameter measurements
- Author
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Anwar Jarndal
- Subjects
Materials science ,business.industry ,Extraction (chemistry) ,Comparison results ,Gallium nitride ,Algan gan ,chemistry.chemical_compound ,Reliability (semiconductor) ,chemistry ,Sic substrate ,Scattering parameters ,Pinch ,Optoelectronics ,business - Abstract
In this paper, a parameter extraction method for GaN HEMTs is developed. The main advantage of this approach is its accuracy, reliability and dependence on only pinch-off Sparameter measurements to extract the parasitic elements of the device. The extraction results are compared with other extraction results based on pinch-off and forward measurements. The comparison result demonstrates the validity of the proposed method for small- and large-signal modeling of GaN devices.
- Published
- 2014
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123. A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series Analysis
- Author
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Gunter Kompa, Anwar Jarndal, and E. R. Srinidhi
- Subjects
Engineering ,business.industry ,Transistor ,Electrical engineering ,Volterra series ,Linearity ,High-electron-mobility transistor ,Capacitance ,Electronic, Optical and Magnetic Materials ,law.invention ,IMD3 ,law ,Distortion ,Scattering parameters ,Electronic engineering ,Electrical and Electronic Engineering ,business - Abstract
This letter mainly focuses on providing theoretical justification for possible gallium-nitride (GaN) device linearity improvement, interpreting the key physical origins of third-order distortion (IMD3). Based on the bias-dependent S-parameter measurement data of field-plate (FP)-free 8times125 mum GaN high-electron mobility transistor (HEMT), IMD3 is modeled using classical Volterra series theory. Through this technique, device diagnosis is carried out for efficiently localizing the distortion behavior. Further, device linearity is shown to improve by appropriately tuning the gate-drain feedback capacitance by taking advantage of FP technology proving the analysis to be a powerful tool for developing GaN HEMT technology
- Published
- 2007
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124. An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction
- Author
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Anwar Jarndal and Gunter Kompa
- Subjects
Materials science ,business.industry ,Extraction (chemistry) ,Wide-bandgap semiconductor ,Large-signal model ,High-electron-mobility transistor ,Condensed Matter Physics ,Small-signal model ,Scalability ,Electronic engineering ,Optoelectronics ,Extraction methods ,Electrical and Electronic Engineering ,business ,Scaling - Abstract
The validity of the proposed small-signal model (SSM) and the developed extraction method in for large GaN devices is investigated. Extraction of parasitic elements is performed for different size devices to show the scaling of these elements with the gate width. The model shows a very good result for describing the parasitic distributed effect, which is considerable for large devices.
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- 2006
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125. Load forecasting for power system planning using a genetic-fuzzy-neural networks approach
- Author
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Anwar Jarndal
- Subjects
Set (abstract data type) ,Mathematical optimization ,Electric power system ,Artificial neural network ,business.industry ,Computer science ,Peak load ,Fuzzy neural ,Load forecasting ,Electricity ,business ,Fuzzy logic ,Simulation - Abstract
Prediction of future load demand is important for secure operation of power systems and their economical utilization. A number of algorithms have been suggested for solving this problem. In this paper, a genetic-fuzzy-neural networks approach for mid-term load forecasting is proposed. In this paper the relationship between humidity, temperature and load is identified with a case study for a particular region in Oman. The output load obtained is corrected using a correction factor from neural networks model, which depends on previous set of loads. Data for monthly peak load of four years has been used for training the model, which then forecasts the load of the fifth year. The model has been validated using actual data from an electricity company.
- Published
- 2013
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126. A simplified modelling approach for AlGaN/GaN HEMTs using pinched cold S-parameters
- Author
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Anwar Jarndal
- Subjects
Reliability (semiconductor) ,Materials science ,Dependency (UML) ,Electronic engineering ,Wide-bandgap semiconductor ,Algan gan ,Engineering physics - Abstract
In this paper, a simplified small-signal modeling approach for GaN HEMTs has been developed. The main advantage of this approach is its dependency on only cold pinchoff S-parameter measurements to extract the parasitic elements of the device. S-parameter measurements at different bias conditions in addition to physical based analysis have been used to validate the accuracy and reliability of the developed modeling method.
- Published
- 2013
- Full Text
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127. Measurements uncertainty and modeling reliability of GaN HEMTs
- Author
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Anwar Jarndal
- Subjects
chemistry.chemical_compound ,Reliability (semiconductor) ,chemistry ,Computer science ,Logic gate ,Electronic engineering ,Process (computing) ,Range (statistics) ,Measurement uncertainty ,Gallium nitride ,High-electron-mobility transistor ,Rule of thumb - Abstract
In this paper, an important factors for accurate modeling of GaN HEMT is presented. Measurement uncertainty and frequency range as rules of thumb for reliable extraction of the small-signal model parameter is demonstrated. Determining the optimal pinch-off bias condition as a key point for reliable extraction of the reactive extrinsic parameters of the model is also investigated. The results of this study, which is carried out on high-power large size (in the order of 1mm gate width) devices, shows that the mentioned three points should be considered during modeling process.
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- 2013
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128. A genetic neural network modeling of GaN HEMTs for RF power amplifiers design
- Author
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Hussein Abdulqader, Swaroop Ramaswamy Pillai, Anwar Jarndal, and Fadhel M. Ghannouchi
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Engineering ,business.industry ,Amplifier ,Transistor ,RF power amplifier ,Solid modeling ,High-electron-mobility transistor ,computer.software_genre ,law.invention ,Power (physics) ,law ,Logic gate ,Electronic engineering ,Computer Aided Design ,business ,computer - Abstract
A genetic neural network based large-signal model for GaN HEMT transistor suitable for designing power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software and requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data. The model has been employed for simulating a switching-mode inverse class-F power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.
- Published
- 2011
- Full Text
- View/download PDF
129. Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
- Author
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A. Birafane, Fadhel M. Ghannouchi, Ammar B. Kouki, Louay Degachi, Anwar Jarndal, Renato Negra, and Pouya Aflaki
- Subjects
Engineering ,Materials science ,business.industry ,Amplifier ,RF power amplifier ,Transistor ,Electrical engineering ,Large-signal model ,High-electron-mobility transistor ,Condensed Matter Physics ,computer.software_genre ,Electronic, Optical and Magnetic Materials ,Power (physics) ,law.invention ,law ,Materials Chemistry ,Electronic engineering ,Linear amplifier ,Computer Aided Design ,Electrical and Electronic Engineering ,business ,Direct-coupled amplifier ,computer ,AND gate - Abstract
A table-based large-signal model for GaN HEMT transistor suitable for designing switching-mode power amplifiers (SMPAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The intrinsic drain and gate currents are described as a table-based to provide an accurate prediction for the device in the switching states as well as the transition one. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT. The model is validated by comparing its small- and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.
- Published
- 2010
- Full Text
- View/download PDF
130. Large-signal modeling of AlGaN/GaN HEMTs based on DC IV and S-parameter measurements
- Author
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Pouya Aflaki, Anwar Jarndal, and Fadhel M. Ghannouchi
- Subjects
Materials science ,business.industry ,Amplifier ,Transistor ,RF power amplifier ,Gallium nitride ,Solid modeling ,High-electron-mobility transistor ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Scattering parameters ,Electronic engineering ,Optoelectronics ,Radio frequency ,business - Abstract
In this paper, a large-signal model for GaN HEMT transistors for designing RF power amplifiers is presented. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure is applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data under different classes of operation.
- Published
- 2010
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131. Improved parameter extraction method for GaN HEMT on Si substrate
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Anwar Jarndal, Asdesach Zena Markos, and Gunter Kompa
- Subjects
Materials science ,business.industry ,Wide-bandgap semiconductor ,Semiconductor device modeling ,Gallium nitride ,High-electron-mobility transistor ,Small-signal model ,chemistry.chemical_compound ,chemistry ,Scattering parameters ,Optoelectronics ,Initial value problem ,Radio frequency ,business - Abstract
An improved parasitic elements extraction method applied to GaN on Si devices is presented. Genetic-algorithm based procedure is used to determine a high quality reliable starting values for the extrinsic parameters of proposed small-signal model. Local optimization technique is then used to refine the initial value and find the optimal value for each model element. The validity of the developed method and the proposed small-signal model is verified by comparing simulated small-signal S-parameters with measured ones of a 2-mm (10×200 µm) GaN HEMT-on-Si.
- Published
- 2010
- Full Text
- View/download PDF
132. On the large-signal modeling of AlGaN/GaN HEMTs for RF switching-mode power amplifiers design
- Author
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Anwar Jarndal, Fadhel M. Ghannouchi, Ammar B. Kouki, Louay Degachi, A. Birafane, Renato Negra, and Pouya Aflaki
- Subjects
business.industry ,Computer science ,Amplifier ,Transistor ,Electrical engineering ,Gallium nitride ,Solid modeling ,High-electron-mobility transistor ,computer.software_genre ,law.invention ,Power (physics) ,chemistry.chemical_compound ,chemistry ,law ,Electronic engineering ,Computer Aided Design ,Equivalent circuit ,business ,computer - Abstract
A large-signal model for GaN HEMT transistor suitable for designing switching-mode power amplifiers (SMPAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its small- and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.
- Published
- 2009
- Full Text
- View/download PDF
133. Efficient modeling of GaN HEMTs for linear and nonlinear circuits design
- Author
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Ammar B. Kouki and Anwar Jarndal
- Subjects
010302 applied physics ,Engineering ,Dependency (UML) ,business.industry ,Amplifier ,Transistor ,Semiconductor device modeling ,Nonlinear circuits ,020206 networking & telecommunications ,Gallium nitride ,02 engineering and technology ,High-electron-mobility transistor ,01 natural sciences ,Computer Science Applications ,law.invention ,chemistry.chemical_compound ,Nonlinear system ,chemistry ,law ,Modeling and Simulation ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Electrical and Electronic Engineering ,business - Abstract
In this paper, a nonlinear modeling approach for gallium nitride high-electron mobility transistor (GaN HEMT) on Si substrate is proposed. A reliable method has been developed to extract the extrinsic elements of the model. Its main advantage is its accuracy and dependency on only pinched-off and unbiased S-parameter measurements. The extrinsic elements are de-embedded from multi-bias S-parameters to characterize the transistor intrinsic and construct a large-signal model. The validity of the developed modeling approach is verified by comparing its small-signal and large-signal (single-tone and two-tone) simulations with measured data of a 2-mm GaN HEMT on Si substrate. The model has been employed for designing a class-AB power amplifier. A very good agreement between the amplifier simulation and measurement shows the validity of the model. Copyright © 2015 John Wiley & Sons, Ltd.
- Published
- 2015
- Full Text
- View/download PDF
134. Accurate Large-Signal Modeling of AlGaN-GaN HEMT Including Trapping and Self-Heating Induced Dispersion
- Author
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Gunter Kompa, B. Bunz, and Anwar Jarndal
- Subjects
Materials science ,business.industry ,Wide-bandgap semiconductor ,Gain compression ,Gallium nitride ,Large-signal model ,High-electron-mobility transistor ,Trapping ,Capacitance ,chemistry.chemical_compound ,chemistry ,Dispersion (optics) ,Optoelectronics ,business - Abstract
An accurate large-signal model for AlGaN-GaN HEMT is presented. This model is derived from a distributed small-signal model that efficiently describes the physics of the device. An improved drain current model accounts for trapping and self-heating effects is implemented. The model shows very good results for simulating the high-power operation of a 8times125mum gate width AlGaN-GaN HEMT even beyond the 1-dB gain compression point
- Published
- 2006
- Full Text
- View/download PDF
135. A new small signal model parameter extraction method applied to GaN devices
- Author
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Anwar Jarndal and Gunter Kompa
- Subjects
Materials science ,business.industry ,Semiconductor device modeling ,Gallium nitride ,High-electron-mobility transistor ,Computational physics ,Small-signal model ,chemistry.chemical_compound ,Parasitic capacitance ,chemistry ,Scattering parameters ,Range (statistics) ,Optoelectronics ,Equivalent circuit ,business - Abstract
A new parasitic elements extraction method applied to GaN devices is presented. First, using cold S-parameter measurements, high quality starting values for the extrinsic parameters are generated that would place the extraction close to the global minimum of the objective function for the distributed equivalent circuit model. In a second step, the optimal model parameter values are searched through optimization using the starting values already obtained. The validity of the developed method and the proposed small-signal model is verified by comparing the simulated wide-band small-signal S-parameter, over a wide bias range, with measured data of a 0.5 /spl mu/m GaN HEMT with 2 /spl times/ 50 /spl mu/m gate width.
- Published
- 2005
- Full Text
- View/download PDF
136. Large-Signal Modeling of GaN Devices for Designing High Power Amplifiers of Next Generation Wireless Communication Systems
- Author
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Anwar Jarndal and Anwar Jarndal
- Published
- 2010
- Full Text
- View/download PDF
137. On the large-signal modeling of AlGaN/GaN devices using genetic neural networks
- Author
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Anwar Jarndal, Pillai, S., Abdulqader, H., and Kompa, G.
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