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• We architected cellular particles and mixed them in asphalt. • The cellular particles absorbed energy and deformed. • This mechanism delayed stone loss by approximately 20%. This paper aims to quantify stone loss mitigation due to the action of architected cellular particles that can absorb impact energy. The architected cellular particles presented in this paper are additives for asphalt that have been designed to absorb impact energy through an internal porous structure filled with a bitumen-compatible liquid that controls their strength. The experimental programme is divided into four phases: Cellular particle manufacturing and morphological analysis; optimisation of asphalt mixture performance by selecting the cellular particle content based on mass loss, rutting and skid resistance testing; study of mass loss with varying compaction energy and asphalt gradation and microstructural and energy absorption analysis. It was concluded that (i) the asphalt's mass loss linearly decreased as the cellular particle content was increased, (ii) up to 1% of architected cellular particle content by total weight of the mixture reduced mass loss without producing adverse effects in the asphalt, (iii) architected cellular particles deformed during testing, absorbing the impact load energy. [ABSTRACT FROM AUTHOR]

Abstract: Deposition by RF magnetron sputtering of PbZr0.52Ti0.48O3 (PZT) ferroelectric thin films on two types of colossal magneto-resistive (CMR) oxide electrodes, La0.67Sr0.33MnO3 (LSMO) and La0.67Ca0.33MnO3 (LCMO), is demonstrated in this work. The multiferroic heterostructure is grown on a STO substrate, which causes a 〈001〉 preferred orientation to develop. Ferroelectric, retention of polarisation and local piezoelectric properties were measured for assessing the success of the integration from the ferroelectric point of view. Remnant polarisation P r and coercive field E c were found to be ∼40 μC/cm2 and ∼100 kV/cm, respectively. Films presented good retention of polarisation and piezoresponse loops. These results show that ferroelectric layers with good functionality can be grown on CMR oxide films, and open the possibility of designing a piezoelectrically driven spin valve memory cell device based on this heterostructure. [Copyright &y& Elsevier]