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A simple laboratory device for the rapid preparation of high quality polished surfaces from relatively rough metal specimens has been described. Even though, compared with other methods, high current density is used deep polishing takes place without pitting.

A STUDY of the red cyanogen bands shows that the band at v14430 is not the true 0–0 band of the system. Six new bands on the higher λ side have been photographed on neocyanine plates, from the spectrum of cyanogen as developed in active nitrogen (R.K.A.) and of the high current density arc (J.W.R.). These can be fitted in a simple manner in the existing n′/n″ table for the red cyanogen bands, by extending the n′ progressions as under

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices., Comment: 24 pages, 9 figures main text, 4 figures supporting information