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Zinc oxide thin film was grown on glass substrate using sol-gel spin coating method. The optical constants and dispersion energy parameters of the zinc oxide thin film were determined using optical characterization method. The optical band gap of the n-type ZnO semiconductor was found to be 3.24 eV. The refractive index dispersion of the ZnO obeys the single oscillator model. The dispersion energy and oscillator energy values of the ZnO film were found to be 13.74 eV and 6.61 eV, respectively. The real and imaginary parts of the dielectric constant of the ZnO film were determined. The photoluminescence spectra of the ZnO film indicate a peak around 401 nm (3.10 eV) due to the electron transition from the energy level of interstitial Zn to valance band and the another peak is observed around 530 nm (2.34 eV) which is attributed to the oxygen vacancies in ZnO., (Copyright © 2011 Elsevier B.V. All rights reserved.)

The optical properties of sulfonated polyaniline (SPAN) thin film prepared by electrochemical method have been investigated. Polychromic behavior of SPAN thin film (transparent yellow-green-dark blue) was observed when the cyclic voltammograms were taken between -0.25 V and +1.90 V (vs. Ag/AgCl, sat.) during the growth of polyaniline film. In situ UV-vis spectra of the polymers-indium tin oxide (ITO) glass electrode were taken during the oxidation of the polymers at different applied potentials. The direct band gap values of SPAN thin film changed from 3.771 eV to 3.874 eV with the applied potentials. From in situ UV-vis spectra, the optical constants such as refractive index and dielectric constant of the SPAN thin film were determined. The important changes in absorption edge, refractive index and the dielectric constant were observed due to the applied potentials. The refractive index dispersion curves of the film obey the single-oscillator model and oscillator parameters changed with the applied potentials. The most significant result of the present work is in situ spectroelectrochemical method, which can be used to modify the optical band gaps and constants.

Effect of In, Al and Sn dopants on the optical and structural properties of ZnO thin films have been investigated by X-ray diffraction technique and optical characterization method. X-ray diffraction patterns confirm that the films have polycrystalline nature. The thin films have (002) as the preferred orientation. This (002) preferred orientation is due to the minimal surface energy which the hexagonal structure, c-plane to the ZnO crystallites, corresponds to the densest packed plane. The grain size values of the films are found to be 29.0, 35.2 and 39.5 nm for In, Al and Sn doped ZnO thin films, respectively. The optical band gaps of the films were calculated. The absorption edge shifts to the lower wavelengths with In, Al and Sn dopants. The inclusion of dopant into films expands also width of localized states as E(UIn)>E(UAl)>E(USn). The refractive index dispersion curves obey the single oscillator model. The dispersion parameters and optical constants of the films were determined. These parameters changed with In, Al and Sn dopants.

The electrical, optical, and metal-semiconductor contact properties of the polyaniline prepared by emulsion polymerization have been investigated to obtain an organic semiconductor material. The obtained results suggest that the polyaniline (PANI) studied is an organic semiconductor material with optical band gap (E(g) = 2.21 eV) and room electrical conductivity (sigma(25) = 3.12 x 10(-2) S/cm) values. A Schottky diode with configuration Ag/PANI/n-Si was fabricated. The ideality factor and barrier height of Ag/PANI/n-Si diode at room temperature were found to be 4.59 and 0.38 eV, respectively. The obtained diode parameters change with temperature. The Richardson constant A* value for the Ag/PANI/n-Si diode was found to be 3.81 x 10(-4) A/cm(2).K. The Ag/PANI/n-Si diode is a metal-insulator-semiconductor-type device. The standard deviation, which is a measure of the barrier homogeneity, was found to be 0.14, indicating the presence of interface inhomogeneities. It can be concluded that the polyaniline prepared by emulsion polymerization is an organic semiconductor and Ag/PANI/n-Si configuration shows a Schottky contact.

Photovoltaic properties of Au/beta-carotene/n-Si organic solar cells characterized by current-voltage and capacitance-voltage measurements have been investigated. The photocurrent in the reverse direction increases with increasing illumination intensity. The I(sc) increases linearly with light intensity. The I(sc) dependence of light intensity follows a power law I(sc) approximately F(alpha). The exponent alpha was found to be 1.38. This indicates a monomolecular recombination in this device. Au/beta-carotene/n-Si organic solar cells give an open-circuit voltage of 0.316 V and a short-circuit current of 2.33 x 10(-4) A at light intensity of 6 W/m(2). The best conversion efficiency for Au/beta-carotene/n-Si solar cells was found to be 23.3% at a light intensity of 6 W/m(2).

The optical properties of the poly(N-benzylaniline) thin film were investigated by optical characterization. The optical constants such as refractive index and dielectric constant were determined from the transmittance and reflectance spectra of the film. The refractive index dispersion was analyzed by the Wemple-DiDomenico model. The n(infinity) values changed from 6.37 to 5.71 and these values did not show any certain trend with annealing temperatures. The average oscillator parameter So value, which is the strength of the individual dipole oscillator, was found to be in the range of 1.15 x 10(13) to 1.03 x 10(13) m(-2). The optical band was determined from the direct optical transitions in K space. The optical band Eg of the film decreases from 2.089 to 2.046 eV with increasing annealing temperatures while the Urbach energy Eu called the width of localized states in the optical band gap increases from 0.544 to 0.598 eV. Consequently, the optical constants and optical band gap of the poly(N-benzylaniline) change with the annealing temperatures.

A dielectric anisotropy property of a TEGDC (tetraethylene glycol-bis(3-methylimidazolium) dichloride) is investigated as a function of frequency. TEGDC showed an extremely large negative dielectric anisotropy (-10.95 to -4753.73). Variation of dielectric anisotropy (delta epsilon) with respect to the spot frequencies reveals that liquid crystal (LC) orientation has an n-type property at low frequencies and as the frequency increases dielectric anisotropy character shifts from negative dielectric anisotropy type (n-type) to positive dielectric anisotropy type (p-type). Consequently, the TEGDC is a liquid crystal with large negative dielectric anisotropy.