701. Development and testing of a radiation-hard large-electrode DMAPS design in a 150 nm CMOS process.
- Author
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Caicedo, I., Barbero, M., Barrillon, P., Bespin, C., Breugnon, P., Chabrillat, P., Degerli, Y., Dingfelder, J., Guilloux, F., Habib, A., Hemperek, T., Hirono, T., Hügging, F., Krüger, H., Pangaud, P., Rozanov, A., Rymaszewski, P., Schall, L., Schwemling, P., and Vogt, M.
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COMPLEMENTARY metal oxide semiconductors , *BREAKDOWN voltage , *SEMICONDUCTOR detectors , *COLUMNS , *NEUTRON counters - Abstract
The LF-Monopix chips are depleted monolithic active pixel sensors that follow the large-electrode design approach and implement a fast synchronous read-out architecture. They are designed in a 150 nm CMOS process and make use of large voltages (> 250 V) and highly resistive substrates (> 2 kΩ ⋅ cm) to collect charge through drift and enhance their radiation hardness. Samples of the first prototype ("LF-Monopix1") with a thickness of 100 μ m were irradiated to assess the tolerance of the chip's substrate and front-end circuitry to the surface and bulk damage doses expected at modern collider experiments. The device remained fully operational, with only a very small gain degradation and an increase in noise by less than 25 % after a total ionizing dose of 100 Mrad. Efficiency measurements in a sample exposed to a neutron fluence of 1 × 1 0 15 n eq / cm 2 showed that at least 96 % of all minimum ionizing particles going through a fully depleted detector are recorded in less than 25 ns. In the latest design ("LF-Monopix2") the column length was tripled and the pixel pitch reduced by 40 % with respect to its predecessor. The chip was successfully thinned down while keeping its breakdown voltage above 400 V and achieving a front-end threshold dispersion of ∼ 100 e − after tuning. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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