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We discuss the structure of threading dislocations in α-Ga2O3 thin films grown on c- and m-plane sapphire substrates. The thickness-dependent threading dislocation density in both films directly affects the electrical properties of the films including carrier concentration and mobility. Two distinct types of threading dislocations are identified for each of the c- and m-plane α-Ga2O3 thin films. The c-plane α-Ga2O3 thin film shows Burgers vectors of 1 / 3 [ 1 1 ¯ 01 ] and 1 / 3 [ 11 2 ¯ 0 ] , while the m-plane α-Ga2O3 thin film displays Burgers vectors of 1 / 3 [ 2 1 ¯ 1 ¯ 0 ] and 1 / 3 [ 1 1 ¯ 01 ]. This paper presents a detailed structure of the threading dislocations in α-Ga2O3, which has been little disclosed thus far mainly due to the difficulty in synthesizing the metastable α-Ga2O3. [ABSTRACT FROM AUTHOR]

This study investigates the stability of the (Hf,Zr)O2 (HZO) and AlScN thin films against the depolarization effect. In order to adversely interfere with the polarization screening of ferroelectric (FE) film and induce the depolarization effect, an Al2O3 film was inserted between the TiN bottom electrode and the FE film. Subsequently, to minimize charge injection through Al2O3 films, the double remanent polarization–voltage (2Pr–V) curve was measured employing voltage pulses with 1 μs-length. As the thickness of the Al2O3 film increased, the charge injection through the Al2O3 film decreased, leading to a decrease in the slope of the 2Pr–V curve. The magnitude of the depolarization field applied to the FE film was determined by simulating the 2Pr–V curve using an equivalent circuit model. Subsequently, the proportion of reversed domains during the delay period due to the depolarization effect was measured. It was revealed that HZO films exhibited vulnerability to the depolarization effect, with 16% of domains being reversed. On the other hand, AlScN films demonstrated superior stability, with polarization loss of less than 1%. Ultimately, it was revealed that AlScN films demonstrated superior stability against the depolarization effect compared to HZO films due to their higher coercive field and more uniform polarization distribution across the film area. [ABSTRACT FROM AUTHOR]

This work presents the excess noise and thermoelectric (Seebeck) measurements on polycrystalline vanadium dioxide (VO2) thin films. Noise spectral power density (SPD) of current fluctuations in the semiconducting (SC) phase had a typical flicker noise (f−γ) characteristic with an average slope parameter γ of 1.13. Normalized SPD (Sn) values obtained in the SC-phase indicate that the noise originates in the bulk of the film. On the contrary, in the metallic (M)-phase, γ values were greater than unity, and the observed Sn values indicated that the origin of the noise is most likely from the contacts or surface rather than the bulk. A general decrease was observed in Sn by a factor of 4–5 from the SC- to M-phase. Moreover, Sn in the SC-phase showed no temperature dependence. An interpretation based on the number of charge carrier fluctuations in Hooge's model led to an unrealistically high Hooge parameter and had to be ruled out. We propose that the fluctuations are related to the mobility fluctuations of carriers arising primarily from grain-boundary scattering which explains the observed characteristics well. The Seebeck coefficients (S) obtained under both heating and cooling schedules showed the n-type nature of magnetron-sputtered VO2 films in the SC-phase. Differently, in the M-phase, the S value was positive. The S values obtained from the cooling schedule signified the low percolation threshold of the metal-to-insulator transition already demonstrated for VO2 thin films grown on r-cut sapphire using the Efros–Shklovskii percolation model. [ABSTRACT FROM AUTHOR]

One of the main methods for obtaining information about the generation of sound pulses in metals is to measure the reflection coefficient of a probe wave. Various theoretical models are used to interpret the results of measuring the contribution to reflection coefficient Δ R (t) due to sound-generated displacements of lattice atoms. The purpose of this paper is to establish the degree of accuracy of models used in the case of sound generation in thin films exposed to a femtosecond pulse. It is shown below that the assumption of uniform heating used for thin films is justified if the film thickness is less than the film heating depth and for thicker films at times greater than the film heating time over the entire thickness. For optically thick films, a relatively simple expression for the field can be used. If the film thickness is less than the skin layer depth of the pump field, then it is necessary to consider the field reflection from a substrate. In this case, depending on the optical properties of the metal and the substrate, taking into account reflection can lead to either an increase or a decrease in Δ R (t). It has been established that if the skin layer at the frequency of probe radiation is less than the film heating depth, then taking into account temperature gradients in the equation for the displacement of lattice atoms leads to small changes in Δ R (t). This makes it possible to significantly simplify calculations of the displacement of lattice atoms. [ABSTRACT FROM AUTHOR]

The engineering of the surface morphology and the structure of the thin film is one of the essential technological assets for regulating the physical properties and functionalities of thin film-based devices. This study presents an easy and handy approach to tailor the surface structure of epitaxial thin films utilizing low-energy ion beam. Here, we investigate the evolution of the surface structure and magnetic anisotropy (MA) in epitaxial Fe/MgO (001) model systems subjected to multiple cycles of ion beam erosion (IBE) after thin film growth. The growth of Fe film occurs in the form of three–dimensional islands and exhibits intrinsic biaxial MA. Following a few cycles of IBE, an induced uniaxial magnetic anisotropy leads to a split in the hysteresis loop, and the film displays almost uniaxial magnetic switching behavior. More distinctly, we present a clear and conclusive evidence of (2 × 2) reconstruction of the Fe surface due to the atomic rearrangement by IBE. Furthermore, 57Fe isotope sensitive nuclear resonance scattering measurement provides insight into the depth-resolved magnetic information due to the modified surface topography. We also demonstrate that thermal annealing can reversibly tune the surface reconstruction and induced UMA. The feasibility of the IBE technique by adequately selecting IBE parameters for surface structure modification has been highlighted apart from conventional tailoring of the morphology for the tuning of UMA and introduces a new dimension to our understanding of self-assembled surface morphology evolution by IBE. [ABSTRACT FROM AUTHOR]

Grazing incidence x-ray diffraction reveals that conventional post-deposition-annealed ZrO2 and in situ crystallized (by local epitaxy) ZrO2 thin films (<15 nm) have different internal strain states. A comparison between single- and two-step grown films enables the diverse strain components to be discretely identified. In particular, thickness-dependent intrinsic growth strain is unevenly distributed within the film according to the Volmer–Weber growth. Furthermore, extrinsic thermal strain, locally present in the annealed seed layer, does not spread over the in situ crystallized upper main layer of the two-step film. Post-deposition annealing of the two-step film renders the strain state identical to the single-step films by imposing thermal strain on the in situ crystallized main layer. Local strains created by diffused aluminum and yttrium dopants are also examined. Since each stress factor plays a vital role in the phase formation and electrical behaviors of ZrO2 and other fluorite-structure films, this method will pave the way for understanding the film's internal strain distribution and accompanying performance engineering. [ABSTRACT FROM AUTHOR]

Deposition of epitaxial oxide semiconductor films using physical vapor deposition methods requires a detailed understanding of the role of energetic particles to control and optimize the film properties. In the present study, Ga 2 O 3 thin films are heteroepitaxially grown on Al 2 O 3 (0001) substrates using oxygen ion beam sputter deposition. The influence of the following relevant process parameters on the properties of the thin films is investigated: substrate temperature, oxygen background pressure, energy of primary ions, ion beam current, and sputtering geometry. The kinetic energy distributions of ions in the film-forming flux are measured using an energy-selective mass spectrometer, and the resulting films are characterized regarding crystalline structure, microstructure, surface roughness, mass density, and growth rate. The energetic impact of film-forming particles on the thin film structure is analyzed, and a noticeable decrease in crystalline quality is observed above the average energy of film-forming Ga + ions around 40 eV for the films grown at a substrate temperature of 725 ° C. [ABSTRACT FROM AUTHOR]

Ferroelectric strontium barium niobate (SrxBa1−xNb2O6 or SBN) is a material with high electro-optic (EO) response. It is currently of interest in low voltage silicon-integrated photonics (SiPh). We have grown strongly textured SBN films with x = 0.65 by radio frequency sputtering on (100)-oriented SrTiO3 substrates where grains with mixed (310) and (001) out-of-plane orientation form. For these mixed orientation films, we observed a maximum effective EO coefficient of 230 pm/V using a transmission EO measurement geometry that is responsive only to the in-plane polarization component coming from the (310)-oriented grains. We also demonstrate that by growing SBN on TiO2-terminated SrTiO3 substrates, we can obtain predominantly (001)-oriented SBN films with out-of-plane polarization. Transmission EO measurements on such (001)-oriented films show a reduced effective Pockels coefficient of 88 pm/V, which is consistent with the overall ferroelectric polarization becoming out-of-plane. This work shows that controlling substrate termination is effective in controlling the grain orientation of SBN films grown on top and that one can readily integrate SBN films on SrTiO3-buffered Si for use in SiPh. [ABSTRACT FROM AUTHOR]

We have characterized the magnetization easy-axis of ultra-thin Co films (2-5 atomic layers, AL) grown on Ru(0001) when they are capped with a monolayer of Pd. The addition of a Pd monolayer turns the magnetization of 3 and 4 AL-thick Co films from an in-plane to an out-of-plane alignment, but not that of a 5 AL-thick film. These observations are explained in terms of an enhancement of the surface anisotropy. The exposure of the sample to hydrogen, CO or a combination of both gases does not overcome this effect.

Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb(1−3x/2)LaxHfO3 (PLHO-x, x = 0–0.05) thin films were fabricated on Pt(111)/TiO2/SiO2/Si substrates via the chemical solution deposition method. The x-ray diffraction and high-resolution transmission electron microscopy results show that the doping of La3+, which has a smaller ion radius, leads to a slight decrease in the lattice constant and unit cell volume, which can induce the lattice distortion. In addition, the dielectric and polarization properties indicate that with an increase in the temperature or La3+ content, the antiferroelectric (AFE) I phase can transform into an AFE II phase, exhibiting a slimmer P–E loop with enhanced switching field and more pronounced polarization dispersion. Notably, PLHO-0.04 showcases excellent energy storage performance (55 J/cm3, at 2.8 MV/cm). This material also exhibits good thermal, frequency, and fatigue stability. These results suggest that the energy storage performance of PbHfO3-based films can be enhanced through the phase structure design, presenting a valuable approach to fulfill the growing demand for advanced energy storage devices. [ABSTRACT FROM AUTHOR]

There is no consensus among researchers regarding how phase transitions occur in antiferroelectric (AFE) epitaxial heterostructures, in particular, in heterostructures based on model AFE lead zirconate. The questions about the number of phase transitions in such films and by what mechanism they occur remain controversial. This paper presents a look at the phase transition scenario in two types of epitaxial heterostructures: PbZrO 3 /Ba[La–Sn]O 3 /MgO (001) thin films with thicknesses from 25 to 1000 nm and PbZrO 3 /SrRuO 3 /SrTiO 3 (001) thin film 100 nm thick using the diffuse x-ray scattering in the grazing incidence setup. We register the characteristic butterfly-shaped diffuse scattering (DS) intensity distribution in the H K pseudocubic planes, which corresponds to the anisotropic ferroelectric soft mode. No incommensurate soft mode was observed in the cuts of reciprocal space parallel to the film surface by diffuse scattering. We reproduce the shape of DS distribution at different temperatures by the model based on the dielectric stiffness and the electric polarization correlation tensor in the cubic approximation. Such modeling allows not only to characterize the DS parameters from the challengingly low signal-to-background data set, but also to extract experimentally the sensitivity of the materials with respect to inhomogeneous polarization. While the observed temperature evolution of DS is consistent with the dielectric measurements, the correlation between the DS and the phase transition sequence observed by superstructure reflections is yet to be understood better. [ABSTRACT FROM AUTHOR]

The interplay between orientation transition and chiral self-assemblies of para-terphenyl (P3P) molecules on the Cd(0001) surface has been investigated using low temperature scanning tunneling microscopy and density functional theory calculations. Three distinct molecular orientations have been discerned from the self-assembled thin films of P3P. At the low coverage, flat-lying molecules appear in the homochiral domains with the incommensurate registry to the substrate. With the coverage increasing, the incoming molecules are incorporated into the first layer with edge-on orientation and form the self-assembled zigzag chains. The alternative arrangement of zigzag chains with opposite chirality leads to the formation of a c(4 × 2) superstructure, in which the tilted molecules exhibit orientational frustration and fuzzy noises. The analysis of the tunneling spectra reveals that the electronic structure of P3P layers is contingent upon the hybridization between the electronic states of P3P molecules and the Cd(0001) surface. These results provide important insights into the interplay between orientational transition and chiral assembly of P3P molecules on metal substrates. [ABSTRACT FROM AUTHOR]

It is highly demanded to understand the confinement effect on nanoconfined polymers. Recent studies reported a strong perturbation of local dynamics and substantial alteration of glass transition temperature Tg at nanoscale. However, how confinement affects the mechanical properties of polymers is not fully understood. Here, we show that the modulus of thin polymer films could be remarkedly altered through a polymer–polymer interface. The modulus of a thin polystyrene (PS) film next to a polydimethylsiloxane (PDMS) was determined from the PS–PDMS bilayer bulging test. A series of experiments show that the modulus of PS can be increased up to 37%, when the modulus of the neighboring PDMS varies from 1.04 to 4.88 MPa. The results demonstrate a strong sensitivity of mechanical properties of thin polymers to the hard/soft environment, which we attribute to the change of high-mobility layer by the polymer–polymer interface. [ABSTRACT FROM AUTHOR]

Domain boundaries in perovskite oxides often exhibit abundant physical properties and phenomena. Here, epitaxial LaTiO3 thin films on (100) SrTiO3 substrates are prepared by pulsed-laser deposition. X-ray diffraction and transmission electron microscopy investigations reveal that the epitaxial LaTiO3 thin films have good crystallinity but a high density of domain boundaries. Atomic-scale scanning transmission electron microscopy observations reveal that two types of domain boundaries are formed in the LaTiO3 thin films. The type I domain boundaries are formed on the {100} crystal planes, while the type II domain boundaries on the {110} crystal planes. Electron energy-loss spectroscopy analyses suggest that the valence states of Ti ions at the type I domain boundaries are +3, while those at the type II domain boundaries are +4. First-principles calculations reveal that the bandgap decreases at both domain boundaries compared to the bulk. The carrier concentration at the type I domain boundaries is significantly higher than that of the bulk, while the carrier concentration at the type II domain boundaries is lower. These findings suggest that domain boundaries play an important role in tailoring the electrical properties of the LaTiO3 thin films, thereby promoting the potential applications and property modulation of related materials and devices. [ABSTRACT FROM AUTHOR]

Indium selenide is a polymorphous material system that has attracted considerable attention due to the outstanding electronic, optical, ferroelectric, and antiferroelectric properties of its various crystalline phases; however, this polymorphism adds a layer of complexity to the analysis of Raman and x-ray photoelectron (XPS) data of these materials. In this report, a method of quantitative analysis of combined Raman and XPS data is developed to determine the stoichiometry of indium selenide thin films, as well as the phase fraction of β-In2Se3, γ-In2Se3, and κ-In2Se3 within the films. A 13:1 ratio of the indium to selenium sensitivity factors (σIn/σSe = 13) was found to yield the most accurate stoichiometry results. Further structural characterization of the κ-In2Se3 film was performed and points to its existence in these films as a distinct phase, rather than strained γ-In2Se3. [ABSTRACT FROM AUTHOR]

Magnetic materials with high negative spin polarization have been sought as a building block to increase the design freedom and performance of spintronics devices. In this paper, we investigate negative spin polarization of Mn2VGa Heusler alloy in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. We fabricated an epitaxial CPP-GMR stack consisting of Mn2VGa/Ag/CoFe with L21 ordering in the Mn2VGa layer and observed negative magnetoresistance (MR), which provided evidence of negative spin polarization. The MR ratio depended on thermal treatments (deposition at an elevated temperature and post-annealing), because these processes affected the ordering, roughness, and magnetic properties of Mn2VGa. The maximum MR ratio reached −1.8% at room temperature and −3.0% at low temperatures, representing the highest among the negative MR values in pseudo-spin-valve CPP-GMR devices despite the underestimation due to an incomplete antiparallel magnetization configuration. These findings demonstrate the potential of Mn2VGa for a material with high negative spin polarization. [ABSTRACT FROM AUTHOR]

In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2−xCrxSe3 thin film. The variation in the resistivity with temperature (2–300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices. [ABSTRACT FROM AUTHOR]

Layered thin films of the ferroelectric perovskite Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCZT) and the ferromagnetic half-metal La0.80Sr0.20MnO3 (LSMO) are well-known multiferroic systems that show promise for spintronic applications. In this work, the structure–property relationships are explored in novel BCZT/LSMO thin film heterostructures with optimized ferroic properties. Epitaxial BCZT/LSMO thin film heterostructures are grown by varying the lattice mismatch strains on single crystal LaAlO3 (LAO) (100) and MgO (100) substrates using the pulsed laser deposition technique. The epitaxial strain in the films gives rise to a tetragonal distortion of the BCZT and LSMO unit cells and significantly affects their magnetotransport and magnetodielectric properties. The BCZT/LSMO/LAO heterostructure exhibits a colossal magnetoresistance effect due to a large out-of-plane tensile strain, which induces enhanced carrier hopping in the LSMO layer as compared to the BCZT/LSMO/MgO film. The larger tetragonal distortion of the BCZT unit cell in BCZT/LSMO/MgO contributes to higher dielectric permittivity, with a greater dielectric maxima temperature and freezing temperature. Magnetodielectric measurements reveal a hitherto unobserved giant magnetodielectric effect in the BCZT/LSMO/MgO film, attributed to a large in-plane strain, which induces interfacial polarization distortion at the interfacial layer. Overall, this work elucidates the unique strain and charge-mediated cross-coupled phenomena of magnetic and electric orders in multiferroic thin film heterostructures, which are critical for their technological applications. [ABSTRACT FROM AUTHOR]

Plasmonic catalysis triggers the dissociation of H 2 or adsorbed O 2 (sluggish processes) under continuous wave excitation via plasmon decay. This is coupled to interband or intraband excitation of d-band or sp-band, respectively, to levels above fermi level of metals. Here, we have studied the plasmonic and photocatalytic behavior in an environment friendly medium with AM 1.5 G sunlight of CuO/ Cu 2 O thin films fabricated by pulsed laser deposition technique in vacuum with varying thickness. We have achieved ∼ 0.59 kmol h − 1 g − 1 H 2 production in the CuO/ Cu 2 O film with a thickness of ∼ 27 nm. The role of plasmons with metal–dielectric and semiconductor–semiconductor interfaces is conducted through both experimental and theoretical approaches. The results suggest that the impact of plasmonic catalysis/synthesis is subject to the dimension, composition, and band alignment of two interface materials. [ABSTRACT FROM AUTHOR]

We investigate the impact of non-collinear dual optical excitation on magnetization precession in a permalloy thin film using two ultrashort laser pulses. By analyzing the magnetization dynamics using time-resolved magneto-optical methods, we find that excitation with two ultrashort optical pulses introduces a long-lasting modification of the electron system, as indicated by a sizable decrease in the precession frequency and a significant increase (approximately 25%) in the decay time. Our results reveal that the observed effect strongly depends on the respective polarizations of the two excitation pulses and the time delay between the two optical pulses. Our findings indicate the occurrence of a nonlinear opto-spin effect during photoexcitation with two interfering optical pulses, which can potentially be observed in various materials and at different photon wavelengths. [ABSTRACT FROM AUTHOR]

Among the numerous advantages of the high-power impulse magnetron sputtering (HiPIMS) technique, the most important is the enhanced ionization degree of sputtered species contributing to the film growth. Consequently, the quality of deposited thin films is highly improved. Still, the optimization process is challenging due to the complexity associated with the intricate transport of the sputtered species, ionized or neutrals. The scarce knowledge available on the spatial distribution of these species when operating a HiPIMS discharge makes the quantitative prediction of any deposition feature particularly difficult. In this paper, we discuss the influence of experimentally controllable quantities, such as gas pressure and target current density, on the transport of sputtered titanium in non-reactive (argon) HiPIMS, namely, on the behavior of metal atoms and metal ion fluxes intercepting the substrate. Systematic quantitative measurements were performed in a diameter normal plane on a circular planar target. Hence, the 2D spatial distribution of the ionized flux fraction (IFF) and the total flux of titanium sputtered particles (deposition rate) are evaluated by biasing a quartz crystal microbalance equipped with an electron magnetic filter. The wide range of parameters we examined allows us to predict and optimize the flux of sputtered species based on complete mapping of the IFF of sputtered particles. [ABSTRACT FROM AUTHOR]

The 5th generation (5G) wireless telecommunication standards with newly defined frequency bands up to 6 GHz are currently established around the world. While outperforming surface acoustic wave (SAW) filters above 1 GHz, bulk acoustic wave (BAW) resonators in multiplexers for radio-frequency front-end (RFFE) modules continuously face higher performance requirements. In contrast to free-standing bulk acoustic resonators (FBARs), solidly mounted resonator (SMR) technology uses an acoustic Bragg mirror, which has already been successfully applied for several GHz applications. In this work, we investigate the potential of amorphous hydrogenated silicon-oxycarbonitride (a-SiOCN:H) thin films synthesized with low-temperature plasma-enhanced chemical vapor deposition (PECVD) as a low acoustic impedance (low-Z) material. Compared to the state-of-the-art where in Bragg mirrors up to now SiO2 is used as standard, the acoustic impedance ratio against the high-Z material tungsten (W) is enhanced for a better device performance. To limit the expected increase in viscous loss when the acoustic impedance is reduced, to a minimum, predominantly the mass density was reduced while keeping the mechanical elasticity high. By doing so, acoustic impedance values as low as 7.1 MRayl were achieved, thereby increasing the impedance ratio of high-Z to low-Z materials from 8:1 up to 14:1. [ABSTRACT FROM AUTHOR]

Magnetic nanometric skyrmions are small complex vortex-like topological defects, mainly found in non-centrosymmetric crystals such as MnSi. They have potential applications for future spintronic devices. In this article, the structural, electronic, and magnetic states of the Mn atoms in a polycrystalline MnSi thin film facing a c-sapphire substrate were studied using x-ray diffraction, x-ray photo-emission spectroscopy, resonance photoemission spectroscopy (RPES), and extended x-ray absorption fine structure (EXAFS). The valence band spectra indicate the metallic nature of the film. The RPES study reveals the presence of major itinerant Mn 3d states near EF and also the mixed Mn 3d and Si 3s–3p states from 5.3 to 11.3 eV. The EXAFS spectrum does not show the existence of oxygen vacancies in the system, and the obtained magnetic moment in the non-stoichiometric MnSi thin film is a combination of the partially itinerant and partially localized Mn 3d states. [ABSTRACT FROM AUTHOR]

MnO(001) thin films were grown on commercial MgO(001) substrates at 520 °C by reactive molecular beam epitaxy (MBE) using Mn vapor and O2-seeded supersonic molecular beams (SMBs) both with and without radio frequency (RF) plasma excitation. For comparison, MnO(001) films were grown by reactive MBE using O2 from a leak valve. X-ray photoelectron spectroscopy confirmed the Mn2+ oxidation state and 10%–15% excess oxygen near the growth surface. Reflection high-energy electron diffraction and x-ray diffraction evidenced that the films were rock salt cubic MnO with very strong (001) orientation. High-angle annular dark field scanning transmission electron microscopy with energy-dispersive x-ray spectroscopy demonstrated abrupt MnO/MgO interfaces and indicated [(001)MnO||(001)MgO] epitaxial growth. Ex situ atomic force microscopy of films deposited without RF excitation revealed smooth growth surfaces. An SMB-grown MnO(001) film was converted to Mn3O4 with strong (110) orientation by post-growth exposure to an RF-discharge (RFD) SMB source providing O atoms; the surface of the resultant film contained elongated pits aligned with the MgO 110 directions. In contrast, using the RFD-SMB source for growth resulted in MnO(001) films with elongated growth pits and square pyramidal hillocks aligned along the MgO 110 and 100 directions, respectively. [ABSTRACT FROM AUTHOR]

We performed Ge doping of α-Ga2O3 thin films grown on m-plane sapphire substrates using mist chemical vapor deposition. Although the typical growth rate was high at 4 μm/h, the resultant α-Ga2O3 thin films exhibited high crystallinity. We controlled the carrier density in the range of 8.2 × 1016–1.6 × 1019 cm−3 using bis[2-carboxyethylgermanium(IV)]sesquioxide as the Ge source. The highest mobility achieved was 66 cm2 V−1 s−1 at a carrier concentration of 6.3 × 1017 cm−3. Through secondary ion mass spectrometry analysis, a linear relationship between the Ge concentration in the α-Ga2O3 thin films and the molar ratio of Ge to Ga in the source solution was established. The quasi-vertical Schottky barrier diode fabricated using the Ge-doped α-Ga2O3 thin films exhibited an on-resistance of 7.6 mΩ cm2 and a rectification ratio of 1010. These results highlight the good performance of the fabricated device and the significant potential of Ge-doped α-Ga2O3 for power-device applications. [ABSTRACT FROM AUTHOR]

In recent years, inorganic lead-free perovskite materials have garnered attention for their non-toxicity, high carrier mobility, and strong light absorption capabilities, showing promising application prospects in photoelectric sensing. CsCu2I3 perovskite has been mentioned as one of the representatives and as a potential material for short-wavelength optoelectronic devices. This study employs a one-step chemical vapor deposition (CVD) process to fabricate CsCu2I3 thin films, which exhibit a vibrant yellow emission at 560 nm. Ultraviolet photodetectors utilizing CsCu2I3 films demonstrate an exceptional responsivity and a detectivity of 1.43 A/W and 1.15 × 1012 Jones (254 nm, 5 V bias), along with rapid response times (trise ≈ 50 ms, tdecay ≈ 70 ms). Moreover, this work examines the factors affecting device performance, including wavelength, operating voltage, and film thickness. It presents a straightforward, ecofriendly CVD method for producing lead-free perovskite films and optoelectronic devices, which has significant implications for the development of lead-free perovskite-based photoelectric technologies. [ABSTRACT FROM AUTHOR]

Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer unique properties for piezoelectrics, ferroelectrics, and other emerging applications. Atomic-scale point defects and impurities can strongly affect the functional properties of materials, and therefore, it is crucial to understand the nature of these defects and the mechanisms through which their concentrations may be controlled in AlN-based alloys. In this study, we employ density functional theory with alloy modeling and point defect calculations to investigate native point defects and unintentional impurities in Al 1 − x Gd x N alloys. Among the native defects that introduce deep midgap states, nitrogen vacancies (V N ) are predicted to be in the highest concentration, especially under N-poor growth conditions. We predict and experimentally demonstrate that V N formation can be suppressed in thin films through growth in N-rich environments. We also find that Al 1 − x Gd x N alloys are prone to high levels of unintentional O incorporation, which indirectly leads to even higher concentrations of deep defects. Growth under N-rich/reducing conditions is predicted to minimize and partially alleviate the effects of O incorporation. The results of this study provide valuable insights into the defect behavior in wurtzite nitride-based alloys, which can guide their design and optimization for various applications. [ABSTRACT FROM AUTHOR]

The current focus in Autonomous Experimentation (AE) is on developing robust workflows to conduct the AE effectively. This entails the need for well-defined approaches to guide the AE process, including strategies for hyperparameter tuning and high-level human interventions within the workflow loop. This paper presents a comprehensive analysis of the influence of initial experimental conditions and in-loop interventions on the learning dynamics of Deep Kernel Learning (DKL) within the realm of AE in scanning probe microscopy. We explore the concept of the "seed effect," where the initial experiment setup has a substantial impact on the subsequent learning trajectory. Additionally, we introduce an approach of the seed point interventions in AE allowing the operator to influence the exploration process. Using a dataset from Piezoresponse Force Microscopy on PbTiO3 thin films, we illustrate the impact of the "seed effect" and in-loop seed interventions on the effectiveness of DKL in predicting material properties. The study highlights the importance of initial choices and adaptive interventions in optimizing learning rates and enhancing the efficiency of automated material characterization. This work offers valuable insights into designing more robust and effective AE workflows in microscopy with potential applications across various characterization techniques. [ABSTRACT FROM AUTHOR]

In this paper, we have studied the effect on the structure and magnetic properties of partial Pd substitution by Gd in Fe–Pd thin films of nominal composition Fe56Pd44−xGdx (x = 1, 3, 5, and 7), deposited onto Si(100) and Si(100)/SiO2 substrates by thermal evaporation. Several techniques contribute to the characterization of their microstructure and magnetic properties, such as x-ray diffraction (XRD), scanning electron microscopy, alternating gradient field magnetometry, and magnetic force microscopy (MFM). X-ray diffraction shows that the as-deposited films are either amorphous or contain a disordered FePd phase, depending on the film thickness. The transformation of disordered fcc-FePd into ordered fct-FePd has been induced by a heat treatment at 530 °C for 4 h. The addition of gadolinium leads to a reduction in the coercivity as a consequence of the emergence of soft phases and of the progressive reduction of the fct-FePd phase, which is primarily responsible for the observed maze magnetic domains. The exchange coupling between the soft phase and the hard fct-FePd phase is demonstrated by first-order reversal curves (FORCs). [ABSTRACT FROM AUTHOR]

As initiated Chemical Vapor Deposition (iCVD) finds increasing application in precision industries like electronics and optics, defect prevention will become critical. While studies of non-ideal morphology exist in the iCVD literature, no studies investigate the role of defects. To address this knowledge gap, we show that the buildup of short-chain polymers or oligomers during normal operation of an iCVD reactor can lead to defects that compromise film integrity. We used atomic force microscopy to show that oligomer aggregates selectively prevented film growth, causing these hole-like defects. X-ray diffraction and optical microscopy demonstrated the crystallinity of the aggregates, pointing to a flat-on lamellar or mono-lamellar structure. To understand the origin of the aggregates, spectroscopic ellipsometry showed that samples exposed to the reactor consistently accrued low-volatility contaminants. X-ray photoelectron spectroscopy revealed material derived from polymerization in the contamination, while scanning electron microscopy showed the presence of defect-causing aggregates. We directly linked oligomeric/polymeric contamination with defect formation by showing an increased defect rate when a contaminant polymer was heated alongside the sample. Most importantly, we showed that starting a deposition at a high sample temperature (e.g., 50 °C) before reducing it to the desired setpoint (e.g., 9 °C) unilaterally prevented defects, providing a simple method to prevent defects with minimal impact on operations. [ABSTRACT FROM AUTHOR]

A significant development toward semiconductor-based electronic devices is based on the electric and magneto-electric control of the transport properties of the charge carriers. This study unprecedentedly investigates the Ti implantation and thereafter the effect of structural defects on the electrical and magneto-electric transport properties of Ti-implanted RF-sputtered ZnO thin films. Theoretical stopping and range of ions in matter simulations along with the experimental structural and elemental studies reveal that Ti ion implantation generates a significant amount of oxygen vacancy (VO) defects apart from Ti-related impurities in post-implantation annealed films. The film implanted with 8 × 1015 ions/cm2 (TZO815) exhibits the lowest resistivity (4.68 × 10−3 Ω cm) and the highest carrier concentration (6.61 × 1020 cm−3) values. Resistivity measurements over a temperature range of 5-300K indicate semiconducting behavior for all the films implanted up to fluences of 5 × 1015 ions/cm2 identified with a grain boundary dominated thermally activated band, nearest neighbor hopping, and Mott and Efros–Shklovskii (ES) variable range hopping conduction mechanisms at various temperature intervals. Notably, the gradual decrease in both Mott and ES hopping ranges following Ti implantation indicates the formation of more localized states. Interestingly, the TZO815 film exhibits metal-semiconductor transition around 220 K, suggesting the formation of a degenerate band within the ZnO conduction band upon Ti implantation. Remarkably, the magnetoresistance results align with a semiempirical formula proposed by Khosla and Fischer, indicating that a negative magneto resistance in the TZO thin films is attributed to the spin-dependent scattering of conduction electrons by the localized magnetic moments induced mainly by the implantation induced VO defects. [ABSTRACT FROM AUTHOR]

We conducted spin Hall magnetoresistance (SMR) measurements to investigate the Ru-doping effect on the Morin transition of α-Fe2O3(0001) films, which is the transition from the low-temperature antiferromagnetic state with c-axis magnetic moments to the high-temperature weak ferromagnetic state with c-plane magnetic moments, under a thickness of 6–100 nm. We clarified that the Morin temperature of the 2.6 at. % Ru-doped α-Fe2O3 film was greater than 400 K when the thickness was 100 nm and decreased with a decrease in thickness. Our results demonstrated that SMR measurements are a valid verification method for the Morin transition of very thin α-Fe2O3 films down to several nm. [ABSTRACT FROM AUTHOR]

This study explores the feasibility of precisely tuning the resistive switching behavior of Au/BiFeO 3 /Pt/Ti/SiO 2 /Si memristors through controlled modulation of laser energy density during pulsed laser deposition (PLD). By systematically reducing the laser energy density within the fabrication process, notable alterations in the properties of the BiFeO 3 (BFO) thin film are observed. As the laser energy density decreases, the grain size in the BFO film and the thickness of the film decrease. Furthermore, we obtain the minute structural variations in response to the diverse laser energy densities employed during the deposition process. Energy-dispersive x-ray spectroscopy analysis is employed to investigate the distribution of Ti 4 + ions within the BFO thin film. The reduction in the grain size and film thickness, along with the prominent nucleation of specifically oriented grains, and the diffusion of Ti 4 + ions, lead to the BFO memristor fabricated with a lower laser energy density having more grain boundaries and a shortened conduction path (grain boundary) in the thickness direction. Consequently, the enhanced movement of oxygen vacancies facilitates their preferential accumulation along the grain boundaries within the BFO layer, resulting in an augmented on/off ratio, rectification factor, and set current in the devices. Overall, our findings explain the significant influence of laser energy density in PLD on the microstructure and electrical properties of BFO thin films. Particularly, the lower energy densities are employed to improve electrical characteristics. This research not only enhances our fundamental understanding but also provides valuable insights into optimizing BFO memristors for reliable, robust, and practical applications. [ABSTRACT FROM AUTHOR]

The glass transition (Tg) behavior and enthalpy recovery of polystyrene nanorods within an anodic aluminum oxide (AAO) template (supported nanorods) and after removal from AAO (unsupported nanorods) is studied using Flash differential scanning calorimetry. Tg is found to be depressed relative to the bulk by 20 ± 2 K for 20 nm-diameter unsupported polystyrene (PS) nanorods at the slowest cooling rate and by 9 ± 1 K for 55 nm-diameter rods. On the other hand, bulk-like behavior is observed in the case of unsupported 350 nm-diameter nanorods and for all supported rods in AAO. The size-dependent Tg behavior of the PS unsupported nanorods compares well with results for ultrathin films when scaled using the volume/surface ratio. Enthalpy recovery was also studied for the 20 and 350 nm unsupported nanorods with evolution toward equilibrium found to be linear with logarithmic time. The rate of enthalpy recovery for the 350 nm rods was similar to that for the bulk, whereas the rate of recovery was enhanced for the 20 nm rods for down-jump sizes larger than 17 K. A relaxation map summarizes the behavior of the nanorods relative to the bulk and relative to that for the 20 nm-thick ultrathin film. Interestingly, the fragility of the 20 nm-diameter nanorod and the 20 nm ultrathin film are identical within the error of measurements, and when plotted vs departure from Tg (i.e., T − Tg), the relaxation maps of the two samples are identical in spite of the fact that the Tg is depressed 8 K more in the nanorod sample. [ABSTRACT FROM AUTHOR]

The defect structure of α -phase gallium oxide thin films was investigated using transmission electron microscopy (TEM). Epitaxial Ga2O3 films were grown via halide vapor-phase epitaxy on c -plane sapphire substrates. TEM analysis revealed a high density of extended planar defects within the films, primarily located along prismatic planes of { 11 2 ¯ 0 } type. Displacement vectors were determined using the invisibility criterion for stacking faults. The study encompassed both planar and cross-sectional views of the films. It is hypothesized that these defects form due to the motion of edge partial dislocations with the 1 3 ⟨ 1 1 ¯ 00 ⟩ Burgers vector. Various mechanisms of their formation have been explored. [ABSTRACT FROM AUTHOR]

Perpendicular magnetic anisotropy (PMA) in magnetic thin films has attracted much attention due to its potential applications in spintronics devices. Here, we report the continuous strain-mediated PMA in epitaxial (111) CoFe 2 O 4 (CFO) thin films grown on (0001) LiTaO 3 substrates. A large variation in lattice strain (∼ 0.9 %) in a continuous way is realized in the CFO thin films by changing substrate temperature during deposition due to the difference in the thermal expansion coefficient between CFO and LiTaO 3. As a result, the PMA of the (111) CFO thin films can be continuously mediated by the strain with uniaxial magnetic anisotropy energy in the range of 0.12 - 14.69 × 10 6 erg/cm 3. Furthermore, the strain as well as the consequent PMA in the (111) CFO thin films can be maintained within the thickness of 25–205 nm, which is consistent with the scenario of the magnetoelastic effect. Our results reveal that the CFO/LiTaO 3 system can be regarded as an ideal platform to realize robust PMA and its continuous strain tuning in the (111) CFO thin films by virtue of strain-induced magnetic anisotropy. [ABSTRACT FROM AUTHOR]

Traveling wave parametric amplifiers (TWPAs) offer the most promising solution for high gain, broadband, and quantum noise limited amplification at microwave frequencies. Experimental realization of TWPAs has proved challenging with often major discrepancies between the theoretically predicted and the measured gain performance of the devices. Here, we extend the conventional modeling techniques to account for spatial variation in the surface impedance of the thin film and the parametric sum-frequency conversions effect, which subsequently results in accurate reproduction of experimental device behavior. We further show that such an analysis may be critical to ensure fabricated TWPAs can operate as designed. [ABSTRACT FROM AUTHOR]

Mn 3 Sn, a metallic antiferromagnet with an anti-chiral 120 ° spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-polarized current with novel symmetries, anomalous Nernst effect, and magneto-optic Kerr effect. When grown epitaxially as MgO(110)[001] ∥ Mn 3 Sn(0 1 ¯ 1 ¯ 0)[0001], Mn 3 Sn experiences a uniaxial tensile strain, which changes the bulk sixfold anisotropy to a twofold perpendicular magnetic anisotropy (PMA). Here, we investigate the field-assisted spin–orbit-torque (SOT)-driven dynamics in single-domain Mn 3 Sn with PMA. We find that for non-zero external magnetic fields, the magnetic octupole moment of Mn 3 Sn can be switched between the two stable states if the input current is between two field-dependent critical currents. Below the lower critical current, the magnetic octupole moment exhibits a stationary state in the vicinity of the initial stable state. On the other hand, above the higher critical current, the magnetic octupole moment shows oscillatory dynamics which could, in principle, be tuned from the 100s of megahertz to the terahertz range. We obtain approximate analytic expressions of the two critical currents that agree very well with the numerical simulations for experimentally relevant magnetic fields. We also obtain a unified functional form of the switching time vs the input current for different magnetic fields. Finally, we show that for lower values of Gilbert damping (α ≲ 2 × 10 − 3 ), the critical currents and the final steady states depend significantly on α. The numerical and analytic results presented in our work can be used by both theorists and experimentalists to understand the SOT-driven order dynamics in PMA Mn 3 Sn and design future experiments and devices. [ABSTRACT FROM AUTHOR]

We demonstrate magnetocaloric entropy change and compensation temperatures in ferrimagnetic Gdx(Fe10Co90)100−x amorphous thin films with transition metal-rich and rare earth-rich configurations. Thin films are sputtered with same Gd/FeCo elemental ratio at different thicknesses and of various Gd/FeCo ratios at a constant thickness to understand the effect of these two parameters on an antiferromagnetically coupled magnetic sub-lattice system. Temperature- and field-dependent magnetic measurements [M(H,T)] and magnetocaloric studies are performed over a broad range of temperature (70–600 K) by applying a magnetic field of ±15 kOe on sputter deposited 90 nm thin films of Gdx(Fe10Co90)1−x(x = 30,40,50,55,70). The compensation temperature is found to increase with increasing Gd concentration for thin films of the same thickness. A high magnetocaloric entropy change around 0.97 J/kg K (ΔH = ± 15 kOe) is observed for thin films having the same Gd/FeCo elemental ratio. Furthermore, we observed a "table-like" magnetocaloric entropy change in GdFeCo thin film stacks with a high operational window (60 K) at a low applied field for an Ericsson magnetic regenerator around room temperature. The studies will provide important insight into magnetocaloric studies for Ericsson-cycle refrigeration in thin films having antiferromagnetically coupled sublattices. [ABSTRACT FROM AUTHOR]

Rare-earth iron garnets (REIGs) are the benchmark systems for magnonics, including the longitudinal spin Seebeck effect (LSSE). While most research has focused on single-crystalline REIGs on complimentary garnet substrates, moving to more, cost-effective complementary metal-oxide semiconductor (CMOS)-compatible substrates is important to integrate REIG thin films with existing technology. In this regard, we grow a 130 nm-thick polycrystalline gadolinium iron garnet (GdIG) film on the Si/SiO2 substrate and investigate the temperature-dependent LSSE. Interestingly, the polycrystalline GdIG film exhibits perpendicular magnetic anisotropy (PMA) at room temperature which is induced by tensile in-plane (IP)-strain originating from the thermal-expansion mismatch between the GdIG film and the substrate during rapid thermal annealing. Further, a spin-reorientation transition from the out-of-plane IP direction below TS = 180 K is observed. Additionally, the film reveals a magnetic compensation temperature, T Comp , of ≈240 K. The LSSE voltage not only demonstrates a sign-inversion around T Comp , but also shows noticeable changes around T S. As compared to a single-crystalline GdIG film, the lower LSSE voltage for the polycrystalline GdIG is attributed to the higher effective magnetic anisotropy and enhanced magnon scattering at the grain boundaries. Our study not only paves the way for the cost-effective growth of CMOS-compatible REIG-based systems with PMA for magnonic memory and information processing applications, but also highlights the fact that the spincaloritronic and spin-insulatronic properties of the polycrystalline REIGs follow those of their single-crystalline counterparts with reduced spin-to-charge conversion efficiency through LSSE which can be tuned further by controlling the average gran size and interface engineering. [ABSTRACT FROM AUTHOR]

Ultrawide bandgap ZnGa2O4 (ZGO) thin films were grown on sapphire (0001) substrates at various growth temperatures with a perspective to investigate the electrical and optical characteristics required for high-power electronic applications. Due to the variation in the vapor pressure of Zn and Ga, severe loss of Zn was observed during pulsed laser deposition, which was solved by using a zinc-rich Zn0.98Ga0.02O target. A pure phase single-crystalline ZGO thin film was obtained at a deposition temperature of 750 °C and an oxygen pressure of 1 × 10−2 Torr. The out-of-plane epitaxial relationship between the sapphire and ZGO thin film was obtained from φ-scan. The x-ray rocking curve of the ZGO thin film grown at 750 °C exhibits a full width at half maximum of ∼0.098°, which indicates a good crystalline phase and quality of the thin film. Core-level x-ray photoelectron spectroscopy of ZGO grown at 750 °C indicated that Zn and Ga were in the 2+ and 3+ oxidation states, respectively, and the atomic ratio of Zn/Ga was estimated to be ∼0.48 from the fitted values of Zn-2p3/2 and Ga-2p3/2. The high-resolution transmission electron microscopy images revealed a sharp interface with the thickness of the ZGO film of ∼265 nm, and the signature of minor secondary phases was observed. The bandgap of the ZGO film at different growth temperatures was calculated from the ultraviolet-diffuse reflectance spectroscopy spectra, and its value was obtained to be ∼5.08 eV for the 750 °C grown sample. The refractive index (n) and the extinction coefficient (k) were determined to be ∼1.94 and 0.023 from the ellipsometric data, respectively, and the real dielectric function (ɛr) was estimated to be ∼6.8 at energy 5 eV. The ultrawide bandgap and dielectric function of ZGO recommend its possible potential applications in deep-ultraviolet optoelectronic devices and high-power electronics. [ABSTRACT FROM AUTHOR]

The antiferromagnetic orthoferrite YFeO3 possesses fascinating magnetic properties for spintronics, such as terahertz spin dynamics, ultrafast domain wall motion, and long magnon decay length. YFeO3 belongs to a special family of antiferromagnets that show an unusually strong non-trivial Kerr response due to its weak ferromagnetism. The highly stable antiferromagnetic domains without any spontaneous spin rotation transitions below the 645 K Néel temperature may be useful for nanoscale device applications. We report the successful fabrication of high-quality twinning-free (110)-oriented YFeO3 films by pulsed laser deposition. Detailed structural and magnetic characterization revealed that the crystal structure and magnetic properties of the YFeO3 films are comparable to bulk single crystals. We show that the spin rotation under high magnetic fields follows the two-sublattice approximation model. The film surface is atomically flat with step-terrace surface morphology. A longitudinal magneto-optic Kerr (MOKE) rotation of 10 mdeg was observed at room temperature, which is consistent with earlier reports on bulk single crystals. The in-plane anisotropy of the Kerr response corresponds to the obtained magnetic anisotropy from the SQUID measurement. The large MOKE signal enables the imaging of antiferromagnetic domains and their reversal. The domain size was found to be larger than 100 μm. These high-quality YFeO3 thin films facilitate the fabrication of antiferromagnetic spintronic devices and provide a convenient platform for studying various spin-related phenomena in thin films and at interfaces. [ABSTRACT FROM AUTHOR]

The crystal orientation and the temperature of the substrate are crucial factors that influence clusters deposition and, consequently, the properties of thin films. In this study, the molecular dynamics simulation method was employed to investigate the deposition of Cu55 clusters on Fe(001), Fe(011), and Fe(111) substrates with varying crystal orientations. The incident energies used ranged from 0.1 to 20.0 eV/atom, and the substrates were maintained at temperatures of 300, 500, and 800 K. Analysis of cluster and substrate atom snapshots, along with the physical properties of clusters, revealed how the crystal orientation of Fe substrates affects the morphology and structure of the cluster at different temperatures. Additionally, specific microscopic mechanisms responsible for these effects were identified. The simulation results demonstrate that the crystal orientation of Fe substrate significantly influences the deposition of Cu55 clusters. The structures of the clusters on the three crystal substrates undergo similar changes as the substrate temperature increases, with the Cu55 clusters on the Fe(111) substrate exhibiting the most significant changes in response to the temperature rise. [ABSTRACT FROM AUTHOR]

Ag-doping treatment is a popular method for enhancing the performance of kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Among the various methods, incorporating a high concentration of Ag+ into an absorber surface has proven to be particularly effective. However, the exact mechanisms behind this improvement are still unclear. This study aims to investigate the key factors that improve device performance through simulation. Specifically, the influence of the change in the carrier density, CuZn antisite defects, interface defect density, and formation of an n-type AZTSSe surface after heavy surface Ag doping have been examined. The simulation results indicate that the formation of an n-type AZTSSe layer on an absorber surface can significantly improve the open circuit voltage (VOC) and overcome the efficiency saturation problem induced by severe interface recombination for CZTSSe devices with a negative conduction band offset (CBO), compared to other affecting factors. This is because the modified conduction band alignment and the realization of interface-type inversion reduce interface recombination and retard the Fermi level pinning. However, the formation of interface-type inversion does not significantly improve CZTSSe devices with a positive CBO, as these devices already have weaker interface recombination. This work implies that the formation of an n-type AZTSSe layer is crucial for further improving the performance of CZTSSe devices with a negative CBO and can pave the way for improving the performance of thin film solar cells with severe interface recombination. [ABSTRACT FROM AUTHOR]

Functional thin films of nanoscale metal pillars in oxide or nitride matrices known as vertically aligned nanocomposite (VAN) have gained much interest owing to their unique strain-coupled and highly anisotropic properties. So far, the deposition of these films has been explored mostly experimentally. In this work, a density functional theory (DFT)-based kinetic Monte Carlo simulation model using Bortz–Kalos–Lebowitz algorithm was developed to understand the growth of VAN films deposited by pulsed laser technique on mismatching substrates. The model has been parameterized and applied to understand the kinetics of growth thin films consisting of Au pillars in CeO2 matrix deposited on SrTiO3 substrates. The effects of pulsed laser deposition (PLD) conditions including the pulse frequency, deposition flux, and substrate temperature were explored. The simulations indicate that the Au pillar size and shape exhibit significant dependence on the PLD conditions. Namely, increasing the temperature increases the average pillar size and lowers the pillar density, and vice versa. In addition, the simulations revealed that increasing the deposition rate results in lowering the average pillar size and increasing the density. Particularly, the DFT results suggest that Au pillar size can be tuned during the initial growth of the first monolayer due to the significantly low activation barrier. Our analysis showed that the relationship between the average pillar size and pillar density is influenced by the kinetics. Furthermore, autocorrelation analysis showed that pillars self-organize in quasi-ordered patterns at certain windows of the deposition conditions, which is attributed to the complex nature of the chemical interactions in the system, the kinetics, and the deposition parameters. [ABSTRACT FROM AUTHOR]

Al0.85Sc0.15N thin films, about 920 nm thick, have been deposited on the Si (001) substrate by reactive magnetron sputtering at 600 °C. X-ray diffraction and pole-figure measurements revealed [0002]-oriented texture structures of the nitride films without any phase separations before and after cyclic annealing at 600–900 °C for up to 48 min. Cross-sectional studies by transmission electron microscopy and energy dispersive x-ray analysis revealed an intermediate Al0.85Sc0.15N layer of ∼24.6 nm thick with smaller grains and tilted [0002]-orientations compared to its overlayer, i.e., a nucleation layer (NL), on the Si substrate. After annealing, apparent morphological changes have been observed at the near-interface regions, including the NL, the NL/Si interface, and the Si substrate, rather than in the Al0.85Sc0.15N overlay. Undesired oxygen has been observed in the nitride film and its composition increased during post-growth thermal annealing without forming oxides. These observations shed new light on crystal growth and post-growth thermal annealing of AlScN toward their high-performance piezoelectric applications. [ABSTRACT FROM AUTHOR]

In this study, we systematically investigated the anomalous Nernst effect in perpendicularly magnetized amorphous TbFeCo thin films with various compositions. It was found that the magnitude of the off diagonal thermopower (ODT), which corresponds to the anomalous Nernst effect, can be uniformly explained with respect to the Tb content regardless of the concentration above or below the compensation composition. The maximum ODT of 1.3 μ V/K and the thermoelectric conductivity of 1.59 A/mK at room temperature were obtained, which is more significant than other perpendicular magnetic anisotropy thin films to achieve a large Nernst voltage for roll-type thermoelectric devices. By considering the thermoelectric tensor, Mott's equation, and the scaling law, it was shown both experimentally and theoretically that the magnitudes of the first and second terms contributing to the anomalous Nernst effect are comparable. It was also found that the ODT of TbFeCo thin films is twice or more significant than the product of the Seebeck coefficient and the Hall angle. Furthermore, amorphous metals and Mn-alloys with a large Berry curvature are located above the relation that the ODT is twice the product of the Seebeck coefficient and the Hall angle, which means that amorphous metals are expected to enhance the ANE. [ABSTRACT FROM AUTHOR]

This study investigates the out-of-plane magnetization component of electrodeposited Ni90Fe10 thin films grown under different applied magnetic field conditions. The formation of stripe domains is gradual, as there is a thickness range in which the transcritical shape appears in the hysteresis loops, while only magnetic ripples are measured in the magnetic force microscopy images. For instance, samples deposited under the residual magnetic field generated by the switched-off magnetic stirrer exhibit the transcritical shape in the in-plane hysteresis loops at a thickness of 400 nm, even though corresponding magnetic force microscopy images do not reveal the presence of stripe domains. When a perpendicular magnetic field of 100 Oe is applied during growth, stripe domains become visible in microscopy images, along with the transcritical shape in the hysteresis loop at 400 nm. This implies that the critical thickness for stripe formation can be reduced by applying a perpendicular magnetic field during electrodeposition. We have experimentally confirmed that the larger the magnetic field applied in the out-of-plane direction during growth, the smaller the critical thickness. These results underscore the importance of controlling the external magnetic field during electrodeposition for more effective tuning of the magnetic textures in electrodeposited Ni90Fe10 films. [ABSTRACT FROM AUTHOR]

Illumination stress (IS) and negative bias under illumination stress (NBIS) cause considerable device instability in thin-film transistors based on amorphous In–Ga–Zn–O (a-IGZO). Models using in-gap states are suggested to explain device instability. Therefore, to provide reliably their density of states (DOS), this study investigated the valence band, conduction band, and in-gap states of an a-IGZO thin film. The DOS of in-gap states was directly determined in a dynamic range of six orders of magnitude through constant final state yield spectroscopy (CFS-YS) using low-energy and low-flux photons. Furthermore, light irradiation irreversibly induced extra in-gap states near the Fermi level and shifted the Fermi level to the vacuum level side, which should be related to the device instability due to IS and NBIS. Hard x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy using synchrotron radiation observed the large DOS of in-gap states near the Fermi level as in previous works. Here, we reveal that they are not intrinsic electronic states of undamaged a-IGZO, but induced by the intense measurement light of synchrotron radiation. This study demonstrates that CFS-YS is useful for determining the reliable DOS of the in-gap states for samples that are sensitive to light irradiation. The absorption spectrum measured through photothermal deflection spectroscopy is interpreted based on DOS directly determined via photoemission spectroscopies. This indicates that the line shape in the energy region below the region assigned to the Urbach tail in previous works actually roughly reflects the DOS of occupied in-gap states. [ABSTRACT FROM AUTHOR]

We extend the force-level elastically collective nonlinear Langevin equation theory to treat the spatial gradients of the alpha relaxation time and glass transition temperature, and the corresponding film-averaged quantities, to the geometrically asymmetric case of finite thickness supported films with variable fluid–substrate coupling. The latter typically nonuniversally slows down motion near the solid–liquid interface as modeled via modification of the surface dynamic free energy caging constraints that are spatially transferred into the film and which compete with the accelerated relaxation gradient induced by the vapor interface. Quantitative applications to the foundational hard sphere fluid and a polymer melt are presented. The strength of the effective fluid–substrate coupling has very large consequences for the dynamical gradients and film-averaged quantities in a film thickness and thermodynamic state dependent manner. The interference of the dynamical gradients of opposite nature emanating from the vapor and solid interfaces is determined, including the conditions for the disappearance of a bulk-like region in the film center. The relative importance of surface-induced modification of local caging vs the generic truncation of the long range collective elastic component of the activation barrier is studied. The conditions for the accuracy and failure of a simple superposition approximation for dynamical gradients in thin films are also determined. The emergence of near substrate dead layers, large gradient effects on film-averaged response functions, and a weak non-monotonic evolution of dynamic gradients in thick and cold films are briefly discussed. The connection of our theoretical results to simulations and experiments is briefly discussed, as is the extension to treat more complex glass-forming systems under nanoconfinement. [ABSTRACT FROM AUTHOR]