286 results on '"Zavarin, E. E."'
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52. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
53. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
54. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
55. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
56. Energy characteristics of excitons in structures based on InGaN alloys
57. Photoluminescence of localized excitons in InGan quantum dots
58. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
59. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
60. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
61. Thermal-field forward current in GaN-based surface-barrier structures
62. Vibrational spectra of AlN/GaN superlattices: Theory and experiment
63. A study of carrier statistics in InGaN/Gan LED structures
64. Kinetics and inhomogeneous carrier injection in InGaN nanolayers
65. InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
66. Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells.
67. Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity
68. Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
69. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
70. Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells
71. Proton irradiation effects on GaN-based epitaxial structures
72. Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells
73. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
74. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
75. Nanorelief of a GaN surface: The effect of sulfide treatment
76. High growth rate of AlN in a planetary MOVPE reactor
77. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
78. 2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions
79. Study of the formation of InGaN quantum dots on GaN surface
80. InGaAlN heterostructures for LEDs grown on patterned sapphire substrates
81. MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
82. Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
83. Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period
84. Phonons in short-period (GaN)m(AlN)nsuperlattices:ab initiocalculations and group-theoretical analysis of modes and their genesis
85. A fabrication of AlGaN / AlN / GaN HEMT without annealing of ohmic contacts
86. Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction
87. Two-dimensional plasmons in a GaN/AlGaN heterojunction
88. Near-field photoluminescence spectroscopy of InGaN quantum dots.
89. Investigation of Statistical Broadening in InGaN Alloys
90. Influence of the carrier gas composition on metalorganic vapor phase epitaxy of gallium nitride
91. Resonant Bragg structures with GaN/AlGaN Quantum Wells
92. Barrier height modification and mechanism of carrier transport in Ni/in situgrown Si3N4/n-GaN Schottky contacts
93. Optical properties of GaN/AlGaN nanostructures in the terahertz frequency range
94. InAlN/AlN/GaN heterostructures for high electron mobility transistors
95. Stress-dislocation management in MOVPE of GaN on SiC wafers
96. Multi‐color monolithic III‐nitride light‐emitting diodes: Factors controlling emission spectra and efficiency
97. Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach
98. Lattice dynamics of short‐period AlN/GaN superlattices: Theory and experiment
99. Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency.
100. Optical lattices of InGaN quantum well excitons
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