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210 results on '"ZHAO Chengchun"'

65. Yb:GdScO3 crystal for efficient ultrashort pulse lasers

Author

Zhang, Yuhang, primary, Li, Shanming, additional, Du, Xiao, additional, Guo, Jie, additional, Gong, Qiaorui, additional, Tao, Siliang, additional, Zhang, Peixiong, additional, Fang, Qiannan, additional, Pan, Shilie, additional, Zhao, Chengchun, additional, Liang, Xiaoyan, additional, and Hang, Yin, additional

Published
2021
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66. Supplementary document for Yb:GdScO₃ crystal for efficient ultrashort lasers - 5301160.pdf

Author

Zhang, Yuhang, Li, Shanming, Du, Xiao, Guo, Jie, Gong, Qiaorui, Tao, Siliang, Zhang, Peixiong, Fang, Qiannan, Pan, Shilie, and Zhao, Chengchun

Subjects
Condensed Matter::Superconductivity, Physics::Optics
Abstract

Energy levlels, absorption and emission cross sections calculated by the reciprocity and FL methods, and crystal structure of the Yb3+: GdScO3 crystal.

Published
2021
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69. Effects of the initial flux ratio on CeSb2 crystal growth by a self-flux method.

Author

Zhang, Shulong, Li, Mingtao, Yang, Yilun, Zhao, Chengchun, He, Mingzhu, Hang, Yin, and Fang, Yifei

Subjects
CRYSTAL growth, SINGLE crystals, MAGNETIC transitions, SCANNING electron microscopy, FLUX (Energy)
Abstract

CeSb2 is a homologue of rare-earth diantimonides. This work reports a systematic study of a series of high-quality single crystals of CeSb2 grown by a self-flux method, which is a heavy fermion Kondo metal with intricate magnetic transitions. We have grown four types of crystals with different initial material ratios in order to investigate the effect of growth conditions on the quality of the as-grown crystals. The phase purity, morphology and composition of the synthesized samples were studied with X-ray diffraction, scanning electron microscopy, electron-probe microanalysis, and Raman-scattering spectroscopy to evaluate their quality. It is found that an inappropriate raw material ratio will lead to the inhomogeneity and poor crystallinity of the as-grown crystal. In addition, the electrical transport properties of the as-grown crystals were measured, from which the residual resistivity ratios were extracted to further examine the homogeneity and crystalline quality. Furthermore, the magnetoresistance properties of CeSb2 were observed. Through a systematic study on CeSb2, the most suitable starting ratio for the growth of CeSb2 was obtained, which might serve as a guide for the growth of other light rare-earth diantimonides. [ABSTRACT FROM AUTHOR]

Published
2021
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70. Research Progress of Wide Bandgap Semiconductor ZnGa2O4.

Author

LEI Shasha, GONG Qiaorui, ZHAO Chengchun, SUN Xiaohui, and HANG Yin

Subjects
*WIDE gap semiconductors, *SEMICONDUCTOR materials, *X-ray detection, *THIN films, *OPTOELECTRONIC devices, *PHOTOELECTRICITY
Abstract

Due to their unique physical and chemical properties, wide bandgap semiconductor materials have shown great potential in the field of optoelectronic devices, and have received more and more research and attention. Zinc gallate (ZnGa2O4) is a wide bandgap semiconductor material, showing broad application prospects in the fields of solar-blind ultraviolet photoelectric detection and X-ray detection for its wide bandgap, unique structure and good thermal stability. In this paper, based on the basic structural characteristics of ZnGa2O4, the bandgap, photoelectric properties of ZnGa2 O4, the preparation methods of ZnGa2O4 bulk single crystal and thin film are introduced in detail. Combined with the recent research results of domestic and foreign scholars, the application prospects of ZnGa2 O4 in many fields are summarized, especially the research progress of solar-blind ultraviolet photoelectric detection, memristor, X-ray detection and power devices. Finally, the future development direction of ZnGa2O4 is prospected, and it is pointed out that the quality and performance of ZnGa2O4materials can be further improved to improve device performance and meet higher level application requirements. [ABSTRACT FROM AUTHOR]

Published
2024

73. Hybrid Materials: Synergistic Effects of Wrinkled Graphene and Plasmonics in Stretchable Hybrid Platform for Surface-Enhanced Raman Spectroscopy (Advanced Optical Materials 6/2017)

Author

Chen, Wenjun, primary, Gui, Xuchun, additional, Zheng, Yongjia, additional, Liang, Binghao, additional, Lin, Zhiqiang, additional, Zhao, Chengchun, additional, Chen, Huanjun, additional, Chen, Zefeng, additional, Li, Xinming, additional, and Tang, Zikang, additional

Published
2017
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75. Crystal Growth, Property Investigation, and the Deactivation Effect of Tb3+in Dy3+/Tb3+Codoped LiYF4Crystals: Promising Crystals for All-Solid-State Yellow Lasers

Author

Liu, Xingkun, Gong, Qiaorui, Huang, Conghui, Fang, Qiannan, Chen, Guangzhu, Hang, Yin, Li, Shanming, and Zhao, Chengchun

Abstract

We report the growth, thermal characteristics, and spectroscopic properties of Dy3+-doped (Dy:YLF) and Dy3+/Tb3+codoped LiYF4(Dy,Tb:YLF) crystals. The yellow emission at ∼575 nm of the Dy3+:4F9/2→ 6H13/2transition of the Dy,Tb:YLF crystal was enhanced by the deactivation effects of codoped Tb3+ions. The corresponding ET efficiency from the Dy3+:6H13/2to Tb3+:7F4level was as high as 55.4%, which greatly reduced the energy level lifetime of 6H13/2, and an emission at 575 nm with the emission cross section σem= 4.58 × 10–21cm2was obtained, confirming the effective deactivation of Tb3+ions, which is beneficial to resolve the self-termination bottleneck effect and achieve enhanced yellow laser emission. Hence, the Dy,Tb:YLF crystal is an attractive and potential laser medium for LD-pumped all-solid-state yellow lasers.

Published
2024
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77. Tailoring Plasmon Resonances in Aluminium Nanoparticle Arrays Fabricated Using Anodic Aluminium Oxide

Author

Zhao, Chengchun, Zhu, Yuan, Su, Yuquan, Guan, Zhaoyun, Chen, Anqi, Ji, Xu, Gui, Xuchun, Xiang, Rong, Tang, Zikang, Zhao, Chengchun, Zhu, Yuan, Su, Yuquan, Guan, Zhaoyun, Chen, Anqi, Ji, Xu, Gui, Xuchun, Xiang, Rong, and Tang, Zikang

Abstract

Aluminium (Al) nanoparticles (NPs) over a 1.2-cm(2) -size area are fabricated using nanoporous anodic aluminium oxide as shadow masks. With this technique, plasmon response of Al NP arrays with different out-of-plane height is investigated. The dipolar-localized surface plasmon resonances (LSPRs) peak of Al NP arrays is blueshifted and then redshifted slightly with an increase in particle height because of interparticle interactions. Moreover, a novel method is demonstrated to reduce the size of Al particle via removing the oxide shell by wet chemical etching and taking advantage of the rapid oxidization of the metal core upon exposure to atmosphere. Three kinds of acid solutions (mixture of H3PO4 and H2CrO4, H3PO4, and H2SO4) are demonstrated as effective etchants. By adjusting the etching conditions, the blueshift of LSPRs can be controlled precisely. Dipolar LSPR is obtained at wavelength down to 234 nm (5.3 eV), among the shortest ones ever observed in patterned Al NP arrays.

Published
2015

78. Grain boundary barrier modification due to coupling effect of crystal polar field and water molecular dipole in ZnO-based structures

Author

Ji, Xu, Zhu, Yuan, Chen, Mingming, Su, Longxing, Chen, Anqi, Zhao, Chengchun, Gui, Xuchun, Xiang, Rong, Huang, Feng, Tang, Zikang, Ji, Xu, Zhu, Yuan, Chen, Mingming, Su, Longxing, Chen, Anqi, Zhao, Chengchun, Gui, Xuchun, Xiang, Rong, Huang, Feng, and Tang, Zikang

Abstract

Surface water molecules induced grain boundaries (GBs) barrier modification was investigated in ZnO and ZnMgO/ZnO films. Tunable electronic transport properties of the samples by water were characterized via a field effect transistor (FET) device structure. The FETs fabricated from polar C-plane ZnO and ZnMgO/ZnO films that have lots of GBs exhibited obvious double Schottky-like current-voltage property, whereas that fabricated from nonpolar M-plane samples with GBs and ZnO bulk single-crystal had no obvious conduction modulation effects. Physically, these hallmark properties are supposed to be caused by the electrostatical coupling effect of crystal polar field and molecular dipole on GBs barrier. (C) 2014 AIP Publishing LLC.

Published
2014

82. Efficient dual-wavelength Nd:LuLiF_4 laser

Author

Li, Hongqiang, primary, Zhang, Rui, additional, Tang, Yulong, additional, Wang, Shiwei, additional, Xu, Jianqiu, additional, Zhang, Peixiong, additional, Zhao, Chengchun, additional, Hang, Yin, additional, and Zhang, Shuaiyi, additional

Published
2013
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94. Optical spectroscopy of Nd3+in LiLuF4single crystals

Author

Zhao, Chengchun, primary, Zhang, Lianhan, additional, Hang, Yin, additional, He, Xiaoming, additional, Yin, Jigang, additional, Hu, Pengchao, additional, Chen, Guangzhu, additional, He, Mingzhu, additional, Huang, Huang, additional, and Zhu, Yongyuan, additional

Published
2010
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98. Tm, Ho:LiLuF4晶体的光学性能研究

Author

Peng, Haiyan, primary, Zhang, Kun, additional, Zhang, Lianhan, additional, Hang, Yin, additional, Xu, Jianqiu, additional, Tang, Yulong, additional, Cheng, Yan, additional, Xiong, Jing, additional, Zhao, Chengchun, additional, Chen, Guangzhu, additional, and He, Xiaoming, additional

Published
2010
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