229 results on '"Yamaguchi, Tomuo"'
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52. Modelling of Two-Dimensional Magnetooptical Gratings
53. Airy-like internal reflection series applied in scatterometry and simulations of gratings.
54. Optical metrology of binary arrays of holes in semiconductor media using microspot spectroscopic ellipsometry.
55. Optical metrology of patterned magnetic structures: deep versus shallow gratings.
56. New aspects of narrow bandpass optical filters for DWDM.
57. Magneto-optical phenomena in systems with prism coupling.
58. Measurement of the dielectric function spectra of low dielectric constant using the spectroscopic ellipsometry.
59. Polarized light in structures with magnetic ordering.
60. Spectral ellipsometry of binary optic gratings.
61. Properties of Amorphous SiC:O:H Films Prepared by Magnetron Sputtering of Si in CH4 and CO2.
62. Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures
63. Germanium- and Zinc-Doped P-type InAsSb Single Crystals with a Cutoff Wavelength of 12.5 µm
64. New Application of Carbon Nanotubes. Surface and Thin Film Analysis by Spectroscopic Ellipsometry.
65. SHINKU
66. InAs1-ySby Single Crystals with Cutoff Wavelength of 8–12 µm Grown by a New Method
67. Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 µm
68. Oxygen Doped Amorphous GeC:H Films Prepared by Reactive Sputtering.
69. Structural properties of carbon films deposited by pulsed ArF laser ablation: effects of substrate temperature, bias and H2 pressure
70. A Study of Cr–Al Oxides for Single-Layer Halftone Phase-Shifting Masks for Deep-Ultraviolet Region Photolithography
71. Spectroscopic ellipsometric characterization of diamondlike carbon films
72. Possibility of Simultaneous Monitoring of Temperature and Surface Layer Thickness of Si Substrate by In Situ Spectroscopic Ellipsometry
73. Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers
74. The Application of Silicon Rich Nitride Films for Use as Deep-Ultraviolet Lithography Phase-Shifting Masks
75. Spectroellipsometric characterization of thin silicon nitride films
76. Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
77. Properties of Ge doped a-SixCy:H Films prepared by co-sputtering.
78. Characterization of Interface Layer of Silicon on Sapphire Using Spectroscopic Ellipsometry
79. Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity
80. Room Temperature InAsxP 1-x-ySby/InAs Photodetectors with High Quantum Efficiency
81. Spectroscopic Ellipsometry of SIMOX (Separation by Implanted Oxygen): Thickness Distribution of Buried Oxide and Optical Properties of Top-Si Layer
82. Influence of thickness distribution on spectroscopic ellipsometry of SOS
83. Structural properties of poly-Si deposited by rf glow discharge using 100% SiH4
84. Determination of optical properties of amorphous and crystalline thin films by spectroellipsometry
85. Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs 1-ySby/InAs Multilayers
86. Spectroscopic Ellipsometry. Empirical Dielectric Function for Amorphous Materials and Fluctuated Thickness Model.
87. Ga Doped a-SiG:H Films Propared by Sputtering Using Composite Target.
88. Optoelectronic properties of as-deposited and annealed P-doped microcrystalline Si films deposited by rf glow discharge
89. Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge
90. Spectroellipsometric study of sulphur passivation of InAs
91. Spectroellipsometric study of amorphous thin films
92. Spectroellipsometric characterization of SIMOX with a very thin Si layer
93. Properties of heavily phosphorous-doped μc-Si deposited by mesh attached cathode-type r.f. glow discharge
94. Gravitational Effects on Mixing and Growth Morphology of an In0.5Ga0.5 System
95. Amorphous Ge-C Thin Films Prepared by rf Sputtering.
96. SHINKU
97. Optical characterization of Si on insulator structure
98. Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy
99. Optical properties of sputtered Ge films
100. Optical Properties of High-Quality Ga1-xInxAs1-ySby/InAs Grown by Liquid-Phase Epitaxy
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