305 results on '"Xiao, Hongling"'
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52. TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT.
53. Buckling on Fe‐Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism
54. RETRACTED ARTICLE: Design of visual distance teaching platform based on Internet of things and embedded software system
55. Characteristics of high Al content AlxGa1−xN grown by metalorganic chemical vapor deposition
56. The influence of internal electric fields on the transition energy of InGaN/gaN quantum well
57. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
58. Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
59. MOCVD-grown high-mobility Al 0.3Ga 0.7N/AlN/GaN HEMT structure on sapphire substrate
60. Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
61. Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate
62. A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications
63. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT
64. How subjective are Mandarin reason connectives?
65. Optimization of Finite-Zone Implanted Edge Termination for β-Ga2O3 SBD.
66. Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor
67. Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism
68. Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
69. Design and Fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body Structure
70. 1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region
71. Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width.
72. Simulation and Optimization of Temperature Distribution in Induction Heating Reactor
73. X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power
74. Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer
75. Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures
76. Theoretical analysis of induction heating in high-temperature epitaxial growth system
77. In Vitro Pharmacological Characterization and In Vivo Validation of LSN3172176 a Novel M1 Selective Muscarinic Receptor Agonist Tracer Molecule for Positron Emission Tomography
78. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
79. How subjective are Mandarin reasonconnectives? : A corpus study of spontaneous conversation, microblog and newspaper discourse
80. Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures
81. Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes
82. Translational Pharmacology of the Metabotropic Glutamate 2 Receptor–Preferring Agonist LY2812223 in the Animal and Human Brain
83. Growth and Characterization of AlGaN/AlN/GaN HEMT Structures with a Compositionally Step-Graded AlGaN Barrier Layer
84. Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1−xN/AlN)MQWs/GaN high electron mobility transistor
85. Effect of CO on Characteristics of AlGaN/GaN Schottky Diode
86. Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases
87. Theoretical analysis of the influence of band tail defects on PIN InGaN solar cells
88. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices
89. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors
90. The influence of Fe doping on the surface topography of GaN epitaxial material
91. 123I-Iododexetimide Preferentially Binds to the Muscarinic Receptor Subtype M1 In Vivo
92. Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes
93. In x Ga 1− x N/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%
94. Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition
95. Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer
96. Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
97. Two-dimensional electron and hole gases in InxGa1− xN/AlyGa1− yN/GaN heterostructure for enhancement mode operation
98. Development of a Radioligand, [3H]LY2119620, to Probe the Human M2 and M4 Muscarinic Receptor Allosteric Binding Sites
99. Characterization of the Novel Positive Allosteric Modulator, LY2119620, at the Muscarinic M2and M4Receptors
100. Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer
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