Search

Thyroid cancer is the most common type of endocrine cancer, and most patients have a good prognosis. However, the thyroid cancer differentiation status strongly affects patient response to conventional treatment and prognosis. Therefore, exploring the molecular mechanisms that influence the differentiation of thyroid cancer is very important for understanding the progression of this disease and improving therapeutic options. In this study, SETMAR as a key gene that affects thyroid cancer differentiation is identified. SETMAR significantly regulates the proliferation, epithelial‐mesenchymal transformation (EMT), thyroid differentiation‐related gene expression, radioactive iodine uptake, and sensitivity to MAPK inhibitor‐based redifferentiation therapies of thyroid cancer cells. Mechanistically, SETMAR methylates dimethylated H3K36 in the SMARCA2 promoter region to promote SMARCA2 transcription. SMARCA2 can bind to enhancers of the thyroid differentiation transcription factors (TTFs) PAX8, and FOXE1 to promote their expression by enhancing chromatin accessibility. Moreover, METTL3‐mediated m6A methylation of SETAMR mRNA is observed and showed that this medication can affect SETMAR expression in an IGF2BP3‐dependent manner. Finally, the METTL3‐14‐WTAP activator effectively facilitates the redifferentiation of thyroid cancer cells via the SETMAR‐SMARCA2‐TTF axis utilized. The research provides novel insights into the molecular mechanisms underlying thyroid cancer dedifferentiation and provides a new approach for therapeutically promoting redifferentiation. [ABSTRACT FROM AUTHOR]

Gallium oxide (Ga2O3), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) range, has attracted significant attention in optical filter‐free photodetectors. In practical terms, DUV photodetectors employed in extreme conditions, for example, flame detection and space exploration, face the challenges of performance degradation caused by high/low‐temperature transformation. Here, DUV photodetectors are tailored with high durability and stability by one‐step‐grown β‐Ga2O3 films via pulsed laser deposition. A high‐oxygen‐pressure scheme effectively addresses the issue of film‐free deposition at specifically high temperatures, facilitating the formation of polycrystalline high‐resistivity β‐Ga2O3 films. As a result, the devices exhibit outstanding performance, including a low dark current (4.4 pA @30 V), high photoresponsivity (147.36 A W−1), and fast response time (3.1/22.6 ms). Additionally, the photoresponse performance shows minimal degradation at high temperatures up to 300 °C and even improves at low temperatures down to −100 °C, ranking it among the most robust DUV photodetectors. The mechanism of photoresponse, involving the exciton formation, bandgap evolution, carrier‐phonon scatter, etc., is also elucidated in a wide temperature range. This work provides an efficient solution for developing robust Ga2O3 DUV photodetectors with excellent performance for extreme‐condition applications. [ABSTRACT FROM AUTHOR]

Ga2O3 photodetectors with demonstrated high sensitivity provide a potential subversive scheme for solar‐blind photodetection. However, the planar structure and the relatively slow response speed of the device have restricted the integration and application of Ga2O3 photodetectors. Herein, a narrow SiO2 barrier layer is introduced on the commercial SiC substrate, and a vertical photodetector is realized based on β‐Ga2O3/SiO2/SiC heterostructure with controllable tunneling effect by tailoring the band structure at the interface. The developed device exhibits unconventional rectification characteristics and photoresponse performance in different biasing modes owing to the controllable tunneling effect at the interface. In particular, the photodetector achieves a high responsivity (186.8 A W−1) under solar‐blind illumination at reverse bias, while exhibiting obvious advantages in dark current (3 pA), photo‐to‐dark current ratio (8.8 × 106), linear dynamic range (138.8 dB), and specific detectivity (1.4 × 1015 Jones) at forward bias. The photodetector also demonstrates excellent photoresponse stability after 6 months in air without encapsulation. In addition, an alternating biasing strategy, inspired by its bidirectional operability, is proposed to suppress the persistent photoconductivity effect and increase the decay speed by 1.23 × 105 times. This work provides a referable strategy for the further development of high‐performance Ga2O3‐based photoelectronics. [ABSTRACT FROM AUTHOR]

High-performance radiation detectors are essential in many sectors spanning medical diagnostics, nuclear control, and particle physics. Ultrawide bandgap semiconductor materials have become one of the most promising candidates due to their excellent performance. Here, based on β-Ga2O3, a Schottky diode-type alpha particle detector was demonstrated. In order to reduce the reverse leakage current of the large-area device, the metal-oxide electrode PtOx was introduced to form high-barrier contacts (1.83 eV) with Ga2O3. The device exhibits a low leakage current density of 63 pA/cm2 at −100 V and apparent energy spectra of 241Am generated alpha particles with an energy of 5.486 MeV at various reverse voltages from −40 to −120 V. The charge collection efficiency (CCE) and energy resolution of the device (at −120 V) are 31.7% and 15.3%, respectively. Meanwhile, the mechanism of interaction between alpha particles and β-Ga2O3 was analyzed, and a 45° oblique incidence was adopted to increase the deposited energy of alpha particles in the depletion region. Furthermore, the differences between actual CCE and theoretical CCE are investigated as guidance for further improving detector performance. This work reveals the great potential and good prospects of Ga2O3 as an economical, efficient, and radiation-resistant ionizing radiation detector. [ABSTRACT FROM AUTHOR]

Poor sealing of gas extraction boreholes is one key to restrict gas extraction efficiency. In this paper, a novel borehole sealed quality detection device for the gas extraction of a coal mine is developed based on the theory of air leakage. By comparing the amount of gas extracted at different test points, it is possible to determine whether there is air leakage around the borehole, and the specific leakage position and leakage amount. Moreover, this device has the advantages of simple operation and a short test period. Based on the above analysis, a corresponding air leakage disposal method was proposed to handle the leaky boreholes. Field tests showed that the air–gas mixture flow in the test borehole was reduced by a factor of approximately 1.55 and the concentration of pure seam gas was increased approximately six times after the disposal of the air leaks. The combination of the leakage disposal method and the leakage detection device can accurately seal the borehole at the position of the leak, thus effectively ensuring the effectiveness of gas extraction from the borehole. The findings have important implications for improving the efficiency of gas extraction in coal mining operations. [ABSTRACT FROM AUTHOR]

β-Ga2O3 power diodes were expected to possess low turn-on voltage (V on), low reverse leakage (J R), and high blocking capability for low power losses. In this work, a low V on (0.48 V) β-Ga2O3 heterojunction barrier Schottky diode (HJBS) with tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p+-NiO to suppress J R originating from the low Schottky barrier, the blocking capability of β-Ga2O3 HJBS was enhanced. The spacing width of p+-NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga2O3 diodes. [ABSTRACT FROM AUTHOR]

To address the critical issue of polarization during lithium-ion battery charging and its adverse impact on battery capacity and lifespan, this research employs a comprehensive strategy that considers the charging duration, efficiency, and temperature increase. Central to this approach is the proposal of a novel negative pulsed charging technique optimized using the Non-Dominated Sorting Genetic Algorithm II (NSGA-II). This study initiates the creation of an intricate electrothermal coupling model, which simulates variations in internal battery parameters throughout the charging cycle. Subsequently, NSGA-II is implemented in MATLAB to fine-tune pulsed charging and discharging profiles, generating a Pareto front showcasing an array of optimal solutions tailored to a spectrum of goals. Leveraging the capabilities of the COMSOL Multiphysics software 6.2 platform, a high-fidelity simulation environment for lithium-ion battery charging is established that incorporates three charging strategies: constant-current (CC) charging, a multi-stage constant-current (MS-CC) charging protocol, and a pulsed-current (PC) charging strategy. This setup works as a powerful instrument for assessing the individual effects of these strategies on battery characteristics. The simulation results strongly support the superiority of the proposed pulsed-current charging strategy, which excels in increasing the battery temperature and amplifying battery charge capacity. This dual achievement not only bolsters charging efficiency significantly but also underscores the strategy's potential to augment both the practical utility and long-term viability of lithium-ion batteries, thereby contributing to the advancement of sustainable energy storage solutions. [ABSTRACT FROM AUTHOR]

Soft x-ray detectors play crucial roles in biology, chemistry, and lithography. Current soft x-ray detectors suffer from insufficient responsivity (R), excessively large cell area, and limited stability. Here, the β-Ga2O3 soft x-ray detector is constructed, and the effects of varying the sensitive layer thickness and voltage on the soft x-ray detection characteristics of the device are explored. Meanwhile, the mechanism of the multiplication ionization process from soft x-ray and the photoconductivity gain on the photoresponse performance of the device are analyzed. The device obtains the R up to 3.05 × 103 A/W under 300 eV soft x-ray irradiation at the synchrotron beamline, which is about 1.19 × 104 times higher than that of the conventional device. The Ga2O3 device also maintains stable operation under long-term irradiation and multicycle switching. These results indicate that Ga2O3 is an ideal candidate material for soft x-ray detection, which has great potential for applications such as imaging of biological cells. [ABSTRACT FROM AUTHOR]