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51. Temperature-dependent modeling of high power MESFET using thermal FDTD method

Author

D. Gryglewski and Wojciech Wojtasiak

Subjects
Materials science, Microwave field effect transistors, Signal extraction, Thermal, Finite-difference time-domain method, Electronic engineering, Equivalent circuit, MESFET, Chip, Computational physics, Power (physics)
Abstract

A temperature-dependent model of high power MESFET based on the small signal extraction methodology is presented. The temperature dependencies of the MESFET equivalent circuit elements derived from experimental results describing long-term thermal effects and short-term thermal effects have been modeled by means of FDTD method using chip dimensions. The verification of the proposed model shows an excellent agreement of the experimental results with the theoretical analysis.

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