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310 results on '"Wen, Dianzhong"'

69. Integrated magnetic-sensitive differential circuit based on heterojunction silicon magnetic-sensitive transistor

Author

Xiaofeng Zhao, Han-Yu Guan, Wen Dianzhong, and Li Baozeng

Subjects
Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Wafer, Electrical and Electronic Engineering, Instrumentation, Common emitter, 010302 applied physics, Microelectromechanical systems, business.industry, Transistor, Metals and Alloys, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Resistor, 0210 nano-technology, business, Temperature coefficient
Abstract

This paper presents an integrated magnetic-sensitive differential circuit, consisting of two heterojunction silicon magnetic-sensitive transistors (HSMSTs) with opposite magnetic-sensitive directions and two collector load resistors. The two HSMSTs have a common emitter (E), two bases (B1, B2), two collectors (C1, C2) and two output terminals of the collector voltage. Through using the micro-electro-mechanical system (MEMS) technology and the chemical vapour deposition (CVD) method, chips were designed and fabricated on a p-type 〈100〉 double-side polished silicon wafer with a high resistivity. When VDD = 10.0 V and IB = 6.0 mA, the magnetic sensitivity (Sv) of the proposed differential circuit was 275 mV/T at room temperature and its temperature coefficient (αST) was −1.668%/°C. The experimental results show that the magnetic sensitivity and temperature characteristics of proposed magnetic field sensors can be improved by using integrated differential circuits based on HSMSTs.

Published
2017

70. Characteristics Research of the Three Dimensional Hall Magnetic Field Sensor Based on Packaging Technology

Author

Zhao Xiaofeng, Yang Xianghong, Li Baozeng, and Wen Dianzhong

Subjects
3D Hall magnetic field sensor, Error analysis, Packaging technology, lcsh:Technology (General), lcsh:T1-995, CMOS technology
Abstract

This paper presents a three dimensional (3D) magnetic field sensor composed of three Hall elements with similar characteristics. Through adopting complementary metal oxide semiconductor (CMOS) technology, the chips of Hall element were designed and fabricated on the p-type silicon substrate with high resistivity. Based on the wire bonding technology, the Hall sensors were packaged on printed circuit boards (PCBs), allocating on three faces of a synthetic resin cube (10 ´ 10 ´ 10 mm3) to form an orthogonally directional array. When the supply voltage is 5.0 V, the magnetic sensitivities in x axis, y axis and z axis are 137.7 mV/T, 137.2 mV/T and 136.7 mV/T at room temperature, respectively. The experimental results show that the packaging device can achieve the measurement to 3D magnetic field.

Published
2016

79. Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Author

Li Baozeng, Xiaofeng Zhao, and Wen Dianzhong

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, lcsh:Chemical technology, 01 natural sciences, Biochemistry, Article, Analytical Chemistry, law.invention, temperature characteristics, law, nc-Si:H/c-Si heterojunction, magnetic sensitive transistor, MEMS technology, 0103 physical sciences, lcsh:TP1-1185, Wafer, Electrical and Electronic Engineering, Instrumentation, Common emitter, 010302 applied physics, business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, chemistry, Optoelectronics, Resistor, 0210 nano-technology, business, Temperature coefficient
Abstract

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type orientation double-side polished silicon wafer with high resistivity. In addition, a collector load resistor ( R L ) was integrated on the chip, and the resistor converted the collector current ( I C ) to a collector output voltage ( V out ). When I B = 8.0 mA, V DD = 10.0 V, and R L = 4.1 kΩ, the magnetic sensitivity ( S V ) at room temperature and temperature coefficient ( α C ) of the collector current for HSMST were 181 mV/T and −0.11%/°C, respectively. The experimental results show that the magnetic sensitivity and temperature characteristics of the proposed transistor can be obviously improved by the use of a nc-Si:H/c-Si heterojunction as an emitter junction.

Published
2017
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91. Test-Synthesis Method for Reversible Circuits

Author

Wen Dianzhong and Hu Jing

Subjects
Computer Networks and Communications, Hardware and Architecture, business.industry, Computer science, Optoelectronics, Reversible circuits, business, Test synthesis
Published
2012

99. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

Author

Dandan Li, Yang Yu, Wen Dianzhong, and Zhao Xiaofeng

Subjects
Microelectromechanical systems, Wheatstone bridge, Materials science, business.industry, 010401 analytical chemistry, Transistor, Bipolar junction transistor, Electrical engineering, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Pressure sensor, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, law.invention, law, Materials Chemistry, Optoelectronics, Silicon bandgap temperature sensor, Electrical and Electronic Engineering, 0210 nano-technology, business, Temperature coefficient
Abstract

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ( R 1 , R 2 , R 3 and R 4 ) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r 1 and r 2 , the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.

Published
2017

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