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Objective: To analyze the plasmatic ADM level in early pregnancy and to investigate the diagnostic value of ADM in early ectopic pregnancy (EP). Methods: 70 patients with EP who had menopause for 5~8 weeks were included as study group, while 155 women with normal intrauterine pregnancy were also included as control group. The correlation between ADM level and menopause weeks was statistically analyzed and ROC curve was used to identify the diagnostic value of ADM. Results: (1) In 155 cases of normal intrauterine pregnancy, the plasmatic ADM level was increased with menopause weeks in linear relationship, and the correlation coefficient (R) was 0.991 (P0.05). (2) The multiple of median of plasmatic ADM level in EP group of menopause for 8 weeks was obviously lower than the intrauterine control group (P0.05) regardless of menopause weeks, however, the area under the ROC curve was 0.702 (P

Objective: To compare the effects of treatment of tubal pregnancy (TP)and its following second pregnancy by intratubal methotrexate injection (IMI) alone and combination of IMI with Chinese herbal medicine.Methods: Thirty-five patients suffering from unruptured TP were divided into two groups at random, to the 19 patients in the treated group, the treatment of combined IMI with Ectopic Pregnancy decoction No. 2 (EP2, a traditional Chinese medical decoction) was applied, and to the other 16 patients in the control group, IMI alone was applied for control. Serum concentrations of human chorionic gonadotropin β (β-HCG), size of the gestational sac, existent time of fetal cardiac beat and peritoneal fluid were measured before and after treatment. And hysterosalpingography were performed 6 months after ending the treatment to verify the presence of tubal obstruction and the condition of relapse.Results: The treatment of all the 35 women was successful. The recovery duration of serum β-HCG, disappearance duration of TP sac and existent time of peritoneal fluid in the treated group were 20.0±7.8 days, 1.2±0.7 months and 10.7±2.9 days respectively, which were significantly different from those in the control group (24. 4 ±8.1 days, 3.6±1.7 months and 19.1±3. 2 days respectively(P 0.05). The post-treatment oviduct obstructive rate in the two groups was 10.5% and 43.8% respectively, that in the treatment group was less significant (P 0.05).Conclusion: The two therapies (IMI alone and IMI combined with EP2) could obtain equal efficacy in curing TP. Compared with IMI alone, the combined therapy appears to have the effects of accelerating the resorption of gestational sac and peritoneal fluid, improving the patency of fallopian tube and ameliorating the circumstance of pregnancy, which is favorable to improvement of the re-pregnancy rate and reduction of the re-occurrence of ectopic pregnancy as well as to the enhancement of the effect of IMI in killing trophocytes. But there is not enough proof to show the potency of EP2 in killing embryo.

The practice of stimulating follicular development by Shen-invigorating herbs is directed by traditional Chinese medical theories of "the Shen stores essence of life and governs reproduction" and also the theory of "females" periodicity of the ebb and flow of the blood sea". The follicular phase has physiologic characteristics of blood sea ebbing and yin growing, accordingly using the treating principle of invigorating Shen and nourishing the essence can stimulate follicles" normal development and maturation which can cure many diseases such as female infertility, menoxenia and amenorrhoea. This article will give an introduction of the recent 10 years" research of Shen-invigorating treatment in stimulating follicular development

Clinical Application of One-Step Diagnosis for Ectopic Pregnancy by HCG Ratio: Hemoperitoneum Versus Venous Serum

Channel estimation is important for coherent detection in UWB-OFDM systems, which accuracy affects system performance directly. Based on direct DFT, a windowed DFT estimation algorithm is proposed. The Hanning window is applied to channel impulse response to reduce the spectral leakage in the time domain. The channel information gained from the estimation is used for equalizing signals to reduce the influence of the multi-path channel. Analysis and simulation results show that with low estimation complexity the proposed method performance is better than the direct DFT.

Traditional methods could not satisfy the requirements of the system, because the duration time of the UWB pulse signals is short and the emissive power is low. Using the technique of wavelet transform, the effect of denoising, is obvious in UWB systems. Base on wavelet modulus maxima method, an improved method is proposed to denoising, that is ratio threshold with similar coefficients. It can restrain the noise and reserves the singularity of UWB signals. The simulation results show the new method is simpler and more efficient in denoising than traditional wavelet modular maximum method.

A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed; furthermore, the underlying physical mechanisms are analyzed and investigated in detail.

An analytical model for the drain-source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer, as well as an n-type drift region by means of parabolic approximation of electrostatic potential. The model captures the influence of the p-type epitaxial layer doping concentration on the breakdown voltage, compared with the previously reported model, as well as the effect of the other device parameters. The analytical model is validated by comparing with a numerical device simulation and the measured characteristics of LDMOS transistors. Based on the model, optimization of LDMOS device parameters to achieve proper trade-off between the breakdown voltage and other characteristic parameters such as on-resistance and feedback capacitance is analyzed.