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This study investigates the effects of sputtering power on the performance of p-NiO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density ( D), resulting in the lowering of open circuit voltage ( V) and fill factor ( FF). The cell fabricated at a sputtering power of 100 W has the lowest D of 7.08 × 10 cm eV, corresponding to the highest conversion efficiency ( η) of 4.30 % [short circuit current density ( J): 18.06 mA cm, V: 390 mV, FF: 61.1 %, series resistance ( R): 4.3 Ωcm and shunt resistance ( R): 478.75 Ωcm]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C ( J: +0.07 %/°C, V: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the D of the cell is highly imperative for developing p-NiO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient. [ABSTRACT FROM AUTHOR]

Abstract: The purpose of this study is to reduce textured crystalline silicon (TCS) substrate surface-reflectivity over a wide spectral range (300–1100nm), to improve the step coverage of the textured structure, and to shift the minimal value of reflection from the unabsorbed region to the absorbed region. The TCS solar-cell interface between air and silicon was added to a SiO x /SiO x N y /SiN x triple-layer anti-reflective coatings (TLARCs) structure using the plasma-enhanced chemical vapor deposition (PECVD) growth method. This paper presents theoretical and practical discussions, as well as the experimental results of fabricating the films and devices. The average reflection of the SiO x /SiO x N y /SiN x TLARs reduced to 2.01% (300–1100nm). The minimal value of reflection was shifted from 1370nm (unabsorbed region) to 968nm (absorbed region). The SEM images show effective step coverage. In comparison to the untreated TCS solar cells, applying the experimental SiO x /SiO x N y /SiN x TLARCs to conventional TCS solar cells improved the short-circuit current density (J sc ) by 7.78%, and solar-cell efficiency by 10.95%. This study demonstrates that the SiO x /SiO x N y /SiN x TLARCs structure provides antireflective properties over a broad range of visible and near-infrared light wavelengths. An effective step coverage and minimal value of reflection from unabsorbed region shift to the absorbed region is demonstrated. [Copyright &y& Elsevier]

In this study, we describe composited perovskite films based on the doping of lead cesium triiodide (CsPbI3) quantum dots (QDs) into methylammonium lead iodide (MAPbI3). CsPbI3 QDs and MAPbI3 were prepared by ligand-assisted re-precipitation and solution mixing, respectively. These films were optimized by oxygen plasma treatment, and the effect of powers from 0 to 80 W on the structural properties of the composited perovskite films is discussed. The experimental results showed that the light-harvesting ability of the films was enhanced at 20 W. The formation of the metastable state (lead(II) oxide and lead tetroxide) was demonstrated by peak differentiation-imitating. A low power enhanced the quality of the films due to the removal of organic impurities, whereas a high power caused surface damage in the films owing to the severe degradation of MAPbI3. [ABSTRACT FROM AUTHOR]

In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI3 was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI3 and CsPbI3 was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films. [ABSTRACT FROM AUTHOR]

Using an advanced ultraviolet irradiation (UV curing) process, a high performance porous low-k film of k=2.57, whose Young's modulus is larger than 8 GPa, now is developed to improve the mechanical properties of a film by the reconstruction of Si–O network structure from cage-like Si–O bonds, suboxide structures and Si–CH3 bonds. It was found that the UV curing process can efficiently strengthen the mechanical properties of porous low-k film, and reduce its dielectric constant value by removing hydrocarbon bonds to form porosities. As a result, the key features of this optimal SiOCH material, high elastic modulus and a low dielectric constant, provide promising properties for future integrated schemes. [ABSTRACT FROM AUTHOR]

Abstract: In this study, Anodic Aluminum Oxide (AAO) is used as the storage layer instead of silicon nitride in a silicon–SiO2–Si3N4–SiO2–Silcon (SONOS) structure in flash memory devices and a double I–V method is utilized to investigate its charge trapping behavior on SiO2–Al2O3–SiO2 (OAO) triple stacks. The experimental results show that more initial charge density can be charged into the centroids of neutral charge trapping sites using post deposition annealing (PDA) treatment in OAO triple stacks. Under stress bias testing, OAO triple stacks exhibit a larger shift of threshold voltage than do ONO type devices. The trap energy levels of the bulk electron traps in high k AAO materials were determined. The initial trapping charges are produced during the fabrication process and are changed into centroids of neutral charge trapping sites after PDA treatment, which are responsible for charge trapping/de-trapping during programming/erasing. All devices show that the trapping centroid moves to the top oxide with an increase of stress time. [Copyright &y& Elsevier]

Alcoholic liver injury represents a progressive process with a range of consequences including hepatic steatosis, steatohepatitis, liver fibrosis, cirrhosis, and hepatocellular carcinoma. Targeting key molecular regulators involved in the development of alcoholic liver injury may be of great value in the prevention of liver injury. Peroxisome proliferator-activated receptor α (PPARα) plays a pivotal role in modulation of hepatic lipid metabolism, oxidative stress, inflammatory response and fibrogenesis. As such, PPARα may be a potential therapeutic target for the treatment of alcoholic liver disease.