232 results on '"Voss, Paul L."'
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52. Capteur de détection de gaz d'un composant d'un gaz
53. AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template
54. BAlN thin layers for deep UV applications
55. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells
56. Role of V-pits in the performance improvement of InGaN solar cells
57. Experimental Study and Device Design of NO, NO2, and NH3Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT
58. Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy
59. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
60. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
61. Improved Gas and Water Pollution Sensors Based on AlGaN/GaN HEMTs for Air and Water Treatment Systems
62. Opto-coherent-electronics in graphene: photocurrent direction switching based on illumination wavelength
63. Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well.
64. Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
65. Graphene quantum interference photodetector
66. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices
67. BAlN thin layers for deep UV applications
68. Effect of illumination length on the optical absorption of armchair graphene nano-ribbons
69. Investigation of new approaches for InGaN growth with high indium content for CPV application
70. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells.
71. Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells
72. Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT.
73. Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy.
74. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems.
75. 21 - Fiber-optic quantum information technologies
76. A study of BGaN back-barriers for AlGaN/GaN HEMTs
77. Modeling of N-i-P Vs. P-i-N InGaN solar cells with ultrathin GaN interlayers for improved performance
78. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
79. Full-band quantum-dynamical theory of saturation and four-wave mixing in graphene
80. The quantum noise of guided wave acoustic Brillouin scattering with applications to continuous-variable quantum key distribution
81. A quantum theory of four-wave mixing in graphene
82. A provably secure streamcipher based on a high speed quantum random number generator
83. Use of discrete modulation and a continuous wave local oscillator in a 24 km continuous variable quantum key distribution system
84. A 24 km fiber-based discretely signaled continuous variable quantum key distribution system
85. Security of a discretely signaled continuous variable quantum key distribution protocol for high rate systems
86. Security of a Discretely Signaled Continuous Variable QKD Protocol against Collective Attacks
87. Quantum noise in pure third-order fiber parametric amplifiers
88. Schemes for fibre-based entanglement generation in the telecom band
89. Optimal operating conditions and modulation format for 160 Gb/s signals in a fiber parametric amplifier used as a slow-light delay line element
90. Generation of high-purity telecom-band entangled photon pairs in dispersion-shifted fiber
91. Publisher's Note: Integrable optical-fiber source of polarization-entangled photon pairs in the telecom band [Phys. Rev.73, 052301 (2006)]
92. Integrable optical-fiber source of polarization-entangled photon pairs in the telecom band
93. Raman-noise-induced quantum limits for χ^(3) nondegenerate phase-sensitive amplification and quadrature squeezing
94. Raman scattering noise in phase-insensitive and phase-sensitive parametric processes in fibers
95. A single-photon detector for high-speed telecom-band quantum communication applications
96. Storage and long-distance distribution of telecommunications-band polarization entanglement generated in an optical fiber
97. Optical-Fiber Source of Polarization-Entangled Photons in the 1550 nm Telecom Band
98. Telecom-band entanglement generation in standard fibers
99. High-Purity Telecom-Band Entangled Photon-Pairs via Four-Wave Mixing in Dispersion-Shifted Fiber
100. Measurement of co- and cross-polarized Raman spectra in silica fiber for small detunings
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