51. Electrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds
- Author
-
Volodymyr Pavlyuk, L. P. Romaka, I. Romaniv, and Bogdan Kuzhel
- Subjects
Materials science ,Intermetallic ,Structure type ,Conductivity ,Condensed Matter Physics ,Metal ,Crystallography ,Electrical transport ,Electrical resistivity and conductivity ,visual_art ,visual_art.visual_art_medium ,Electric properties ,General Materials Science ,Orthorhombic crystal system ,Physical and Theoretical Chemistry - Abstract
Electrical transport properties of the R 3 Ag 4 Sn 4 (R = Gd, Tb, Dy, Ho) intermetallics crystallized in the orthorhombic Gd 3 Cu 4 Ge 4 structure type (space group Immm ) were studied in the temperature interval 11-300 K. Measurements of the temperature dependencies of electrical resistivity ( r ( T )) showed that all the studied compounds are characterized by metallic type of conductivity. The slope change of the resistivity at low temperature part of r ( T ) dependencies for Gd 3 Ag 4 Sn 4 , Tb 3 Ag 4 Sn 4 and Dy 3 Ag 4 Sn 4 compounds is connected with their magnetic ordering. Change of the resistivity caused by magnetic ordering was not observed for the Ho 3 Ag 4 Sn 4 compound in the studied temperature interval. Relation between magnetic and electric properties of the investigated R 3 Ag 4 Sn 4 compounds was analyzed.
- Published
- 2018
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