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We study the low-lying excitations from the fractional quantum Hall states at filling factors 2/3 and 2/5 and argue that the charge-carrying excitations involve spin flips, and, in particular, possibly more than one. Energies obtained by exact diagonalization and transport activation gaps measured over a wide range of magnetic fields are invoked. We discuss the relevance of the noninteracting composite-fermion picture where both fractions correspond to the same filling factor 2 of the composite fermions. © 2009 The American Physical Society.

Transport measurements of the activation gap at fractional filling factor 1/3 are compared to results of exact diagonalization, allowing identification of a small anti-skyrmion as the lowest excitation in the low-field regime. In agreement with theory, a crossover to spinless excitations at higher electron densities is observed. Two samples of different quality are investigated. A detailed description of the theoretical calculation of activation gaps is presented and features which should be taken into account are summarized: finite thickness, Landau level mixing, and comparison between different sizes of the model system and-whenever possible-also between different geometries (torus and sphere). Within the chosen model of disorder (entailing a single fit parameter) we obtain a good agreement between calculated energies and experimental results. © 2006 The American Physical Society.

Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one realization of the AMR in which spin-orbit coupling enters via specific spin-textures on the carrier Fermi surfaces and ferromagnetism via elastic scattering of carriers from polarized magnetic impurities. We report detailed heuristic examination, using model spin-orbit coupled systems, of the emergence of positive AMR (maximum resistivity for magnetization along current), negative AMR (minimum resistivity for magnetization along current), and of the crystalline AMR (resistivity depends on the absolute orientation of the magnetization and current vectors with respect to the crystal axes) components. We emphasize potential qualitative differences between pure magnetic and combined electromagnetic impurity potentials, between short-range and long-range impurities, and between spin-1/2 and higher spin-state carriers. Conclusions based on our heuristic analysis are supported by exact solutions to the integral form of the Boltzmann transport equation in archetypical two-dimensional electron systems with Rashba and Dresselhaus spin-orbit interactions and in the three-dimensional spherical Kohn-Littinger model. We include comments on the relation of our microscopic calculations to standard phenomenology of the full angular dependence of the AMR, and on the relevance of our study to realistic, two-dimensional conduction-band carrier systems and to anisotropic transport in the valence band of diluted magnetic semiconductors.

Title: Optical and magneto-optical studies of ferrimagnetic garnets for photonic and spintronic applications Author: RNDr. Lukáš Beran Department: Intitute of Physics of Charles University Supervisor: RNDr. Martin Veis, PhD., Institute of Physics of Charles University Abstract: This doctoral thesis is devoted to fabrication and systematic char- acterization of physical properties of thin films of iron garnets with potential applications in photonic and spintronic devices. Investigated samples were pre- pared by metallo-organic decomposition and pulsed laser deposition. The study was focused on structural and magnetic characterizaiton along with optical and magneto-optical properties. Obtained experimental results were further con- fronted with theoretical calculations. The application potencial of garnets for photonic devices was discussed based on determined Figure of Merit (Faraday rotation to optical loss ratio). High values were achieved for single crystal thin film of Ce doped yttrium iron garnet on galium gadolinium garnet substrate as well as for pollycrystalline Bi doped yttrium iron garned on silicon substrate. Furthermore, new rare-earth garnets were prepared with attempt to achieve per- pendicular magnetic anisotropy of these film. This was achieved for three di erent materials, which were not...

The main goal of this thesis was to develop an experimental technique for investigation of ferromagnetic and antiferromagnetic materials using magneto-optical effects that are quadratic in magnetization. Using a prototype of 2-dimensional electromagnet, which enables to rotate magnetic field of constant magnitude in the sample plane, we were able to study spectral dependences and anisotropies of corresponding magneto-optical coefficients. In ferromagnetic semiconductor GaMnAs we revealed that the anisotropy of Voigt effect magneto-optical coefficient is strongly wavelength dependent - this coefficient can be both isotropic and anisotropic. Very strong anisotropy of this coefficient was observed for metallic FeRh in a ferromagnetic state. Finally, a new method that can be used to measure Voigt effect in antiferromagnetic state of FeRh was demonstrated.

This theoretical thesis presents detailed study of negatively charged excitons - trions - confined in single quantum well in presence of perpendicular magnetic field. Complex valence band of GaAs/GaAlAs compound is described within Luttinger Hamiltonian framework. Singlet and triplet states of negative trion are introduced. Advanced theoretical analysis of Zeeman effect for different states of trion is performed. Landau gauge of magnetic field and unusual wavefunctions basis is chosen and its accuracy is tested. Evolution of ground state energy and photoluminescence spectra with magnetic field is evaluated for different values of Landé g-factors. Probability of occurrence of electrons with respect to the hole position and their spatial correlation function are investigated.