51. Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates
- Author
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Bak-Misiuk, J. Dynowska, E. Misiuk, A. Calamiotou, M. Kozanecki, A. Domagala, J. Kuristyn, D. Glukhanyuk, W. Georgakilas, A. Trela, J. Adamczewska, J.
- Subjects
congenital, hereditary, and neonatal diseases and abnormalities ,nutritional and metabolic diseases - Abstract
The effect of high hydrostatic pressure - high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated by X-ray diffraction methods. The strain of the GaAs layers and GaAs/Si samples bending decreases when subjected to the treatment at T = 670 K under enhanced hydrostatic pressure (1.2 GPa). Dependence between the stress-induced structural changes and the orientation of GaAs miscut angle as well as peculiarities of the temperature-pressure treatment were determined. It has been shown that the amount of relaxed strain depends on the initial defect structure of the GaAs/Si hetrostructure. After reannealing the samples at higher temperature (870 K - 1.2 GPa), the strain and sample bending were the same as that after the treatment at 670 K - 1.2 GPa but the defect structure of layers was improved.
- Published
- 2001