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Transition metal dichalcogenides have emerged as promising materials for nanophotonic resonators because of their large refractive index, low absorption within a large portion of the visible spectrum, and compatibility with a wide range of substrates. Herein, we use these properties to fabricate WS2 double-pillar nanoantennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark-field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe2 monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240 for dimer gaps of 150 nm. We introduce postfabrication atomic force microscope repositioning and rotation of dimer nanoantennas, achieving gaps as small as 10 ± 5 nm, which enables a host of potential applications, including strong Purcell enhancement of single-photon emitters and optical trapping, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nanophotonics by exploring applications enabled by their properties.

Exciton-polaritons are quasiparticles with mixed photon and exciton character with the potential to modify chemical properties of materials. Here, they are used to provide dark, high-spin triplet-pair states a new pathway to emit light., Exciton-polaritons are quasiparticles with mixed photon and exciton character that demonstrate rich quantum phenomena, novel optoelectronic devices and the potential to modify chemical properties of materials. Organic materials are of current interest as active materials for their ability to sustain exciton-polaritons even at room temperature. However, within organic optoelectronic devices, it is often the ‘dark’ spin-1 triplet excitons that dominate operation. These triplets have been largely ignored in treatments of polaritons, which instead only consider the role of states that directly and strongly interact with light. Here we demonstrate that these ‘dark’ states can also play a major role in polariton dynamics, observing polariton population transferred directly from the triplet manifold via triplet–triplet annihilation. The process leads to polariton emission that is longer-lived (>μs) even than exciton emission in bare films. This enhancement is directly linked to spin-2 triplet-pair states, which are formed in films and microcavities by singlet fission or triplet–triplet annihilation. Such high-spin multiexciton states are generally non-emissive and cannot directly couple to light, yet the formation of polaritons creates for them entirely new radiative decay pathways. This is possible due to weak mixing between singlet and triplet-pair manifolds, which – in the strong coupling regime – enables direct interaction between the bright polariton states and those that are formally non-emissive. Our observations offer the enticing possibility of using polaritons to harvest or manipulate population from states that are formally dark.

Exciton-polaritons are quasiparticles with mixed photon and exciton character that demonstrate rich quantum phenomena, novel optoelectronic devices and the potential to modify chemical properties of materials. Organic materials are of current interest as active materials for their ability to sustain exciton-polaritons even at room temperature. However, within organic optoelectronic devices, it is often the 'dark' spin-1 triplet excitons that dominate operation. These triplets have been largely ignored in treatments of polaritons, which instead only consider the role of states that directly and strongly interact with light. Here we demonstrate that these 'dark' states can also play a major role in polariton dynamics, observing polariton population transferred directly from the triplet manifold via triplet-triplet annihilation. The process leads to polariton emission that is longer-lived (>μs) even than exciton emission in bare films. This enhancement is directly linked to spin-2 triplet-pair states, which are formed in films and microcavities by singlet fission or triplet-triplet annihilation. Such high-spin multiexciton states are generally non-emissive and cannot directly couple to light, yet the formation of polaritons creates for them entirely new radiative decay pathways. This is possible due to weak mixing between singlet and triplet-pair manifolds, which - in the strong coupling regime - enables direct interaction between the bright polariton states and those that are formally non-emissive. Our observations offer the enticing possibility of using polaritons to harvest or manipulate population from states that are formally dark.

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Self-assembled quantum dots (QDs) have been at the center of research on the quantum properties of zero-dimensional semiconductor nanostructures. The deep understanding of the physical properties and mechanisms that are active in QDs have allowed for their application in quantum secure single photon communication, quantum processing, etc. This would have been impossible without the progress in the growth control of self-assembled QDs. Nowadays, we can accurately control QD parameters such as height, composition, and strain which determine the optoelectronic and spintronic properties. Several double capping approaches have been developed that allow trimming of the QD height and Sb capping was shown to eliminate QD erosion during capping. Droplet epitaxy is a novel approach to obtain non-strained QDs, which is of great advantage because strain is one of the most complicating factors in understanding and utilizing self-assembled QDs.In this chapter we will review our recent cross-sectional scanning tunneling microscopy (X-STM) analysis of self-assembled QDs in various hosts and obtained by a range of techniques to control their structural properties. The X-STM technique allows to image atomic scale details in semiconductor structures that are cleaved along a natural cleavage plane perpendicular to the growth direction. Although we have been able to analyze many intricate aspects of the studied QDs by X-STM, this technique is limited by its twodimensional (2D) nature. Recently, atom probe tomography (APT) has been able to extend its field of application to semiconductor materials.

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