51. Fabrication of GdBa2Cu3O7−δ films by photo-assisted-MOCVD process
- Author
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Wei Li, Suping Liu, Penchu Chou, Guoxing Li, Xiaoyu Ma, and Bao-Lin Zhang
- Subjects
Fabrication ,Materials science ,Analytical chemistry ,Energy Engineering and Power Technology ,Nanotechnology ,Substrate (electronics) ,Chemical vapor deposition ,Partial pressure ,Condensed Matter Physics ,Microstructure ,Electronic, Optical and Magnetic Materials ,Grain boundary ,Metalorganic vapour phase epitaxy ,Electrical and Electronic Engineering ,Single crystal - Abstract
Pure GdBa 2 Cu 3 O 7− δ (GdBCO) films were deposited on (1 0 0)-oriented LaAlO 3 (LAO) substrates by photo-assisted metal organic chemical vapor deposition (PhA-MOCVD) technique. The effects of substrate temperature ( T s ) and oxygen partial pressure (Po 2 ) on microstructure, growth rate and superconducting critical current density ( J c ) were investigated. A dense and no grain boundary visible, single-crystal-like cross-sectional morphology was observed. For the GdBCO film sample obtained at T s of 810 °C and Po 2 of 4 Torr, the full width at half-maximum were 0.08° and 0.41° for out-of-plane and in-plane orientations, respectively. Such low values were similar to that of single crystal GdBCO. Optimally processed GdBCO samples exhibited J c of 2.5 MA/cm 2 at 77 K in self-field. A relatively high growth rate of 0.104 μm/min for the GdBCO film is realized by the PhA-MOCVD technique.
- Published
- 2014
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