451 results on '"Suda J"'
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52. PERSONAL FREEDOM IN A PLANNED SOCIETY
53. FUNDAMENTAL RIGHTS AND PERSONAL LIBERTY UNDER OUR CONSTITUTION SOME OBSERVATIONS
54. Species-rich and polyploid-poor: Insights into the evolutionary role of whole-genome duplication from the Cape flora biodiversity hotspot
55. Some Remarks on the Statics and Dynamics of Magnetic Field Structure Development in Active Regions
56. Investigations on Electrical Characteristics of 1-kV pnp SiC BJTs Compared with npn SiC BJT
57. Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation
58. Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
59. Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth
60. Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment
61. DNA Ploidy Variation and Population Structure of the Morphologically Variable Helichrysum odoratissimum (L.) Sweet (Asteraceae) in South Africa.
62. Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
63. Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001)
64. Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN
65. Ion implantation technology in SiC for high-voltage/high-temperature devices
66. 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET
67. Negative-U carbon vacancy in 4H-SiC : Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site
68. Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-(11̅20).
69. 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
70. Growth of AlN (11(2)over-bar0) on 6H-SiC (11(2)over-bar0) by molecular-beam epitaxy
71. Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices
72. The Stability of Macroeconomic Systems with Bayesian Learners
73. Ballistic and Quasi-ballistic Hole Transport Properties in Germanium Nanowire pMOSFETs Based on an Extended "Top of the Barrier" Model
74. MOS Characteristics on Homoepitaxial GaN Layer
75. Progress in ultrahigh-voltage SiC devices for future power infrastructure
76. LIST OF PARTICIPANTS
77. High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy
78. Identidade Social em Movimento: A Comunidade Japonesa na Grande Vitória (ES)
79. Temperature Dependence of Current Gain in 4H-SiC Bipolar Junction Transistors
80. Morphologicalversusgenetic diversity ofViola reichenbachianaandV. riviniana(sect.Viola, Violaceae) from soils differing in heavy metal content
81. Negative-Ucarbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site
82. Electrical Characteristics of 21-kV SiC BJTs with Space-Modulated Junction Termination Extension
83. Hitting the right target: taxonomic challenges for, and of, plant invasions
84. The spatio-ecological segregation of different cytotypes of Oxalis obtusa (Oxalidaceae) in contact zones
85. Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices
86. Negative-USystem of Carbon Vacancy in4H-SiC
87. Rate Determining Process and Loading Effects in Si Etching with HCl Gas
88. The more the better? The role of polyploidy in facilitating plant invasions
89. High-Voltage SiC Power Devices for Energy Electronics
90. Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
91. Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC (000-1) Substrate by Molecular-Beam Epitaxy
92. The quest for suitable reference standards in genome size research
93. Karyological features of wild and cultivated forms of myrtle (Myrtus communis, Myrtaceae)
94. Investigation of Phonon Band Gap, Heat Capacity and Raman Active Phonons in BaWO[sub 4] Crystal
95. Accurate Measurement of Nonlinear Optical Coefficients of Gallium Nitride
96. 1580-V–40-$\hbox{m}\Omega\cdot \hbox{cm}^{2}$ Double-RESURF MOSFETs on 4H-SiC$(\hbox{000}\bar{\hbox{1}})$
97. Safety assessment of barrier structures
98. Flow cytometry and its applications in plant population biology, ecology and biosystematics: New prospects for the Cape flora
99. Strong anharmonicity and lattice dynamics in LiTaO3by Raman spectroscopy
100. Anharmonicity on Raman active phonon modes of LaAlO3
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