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65 results on '"Sternberg, Andrew L."'

51. CubeSat: Real-time soft error measurements at low earth orbits

Author

Sierawski, Brian D., primary, Reed, Robert A., additional, Warren, Kevin M., additional, Sternberg, Andrew L., additional, Austin, Rebekah A., additional, Trippe, James M., additional, Weller, Robert A., additional, Alles, Michael L., additional, Schrimpf, Ronald D., additional, Massengill, Lloyd W., additional, Fleetwood, Daniel M., additional, Buxton, Gerald W., additional, Brandenburg, Jonathan C., additional, Fisher, W. Burns, additional, and Davis, Robert, additional

Published
2017
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53. CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance

Author

Sierawski, Brian D., primary, Warren, Kevin M., additional, Sternberg, Andrew L., additional, Austin, Rebekah A., additional, Trippe, James M., additional, McCurdy, Michael W., additional, Reed, Robert A., additional, Weller, Robert A., additional, Alles, Michael L., additional, Schrimpf, Ronald D., additional, Massengill, Lloyd W., additional, Fleetwood, Daniel M., additional, Monteiro, Anthony, additional, Buxton, Gerald W., additional, Brandenburg, Jonathan C., additional, Fisher, W. Burns, additional, and Davis, Robert, additional

Published
2017
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54. Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers

Author

Gong, Huiqi, primary, Liao, Wenjun, additional, Zhang, En Xia, additional, Sternberg, Andrew L., additional, McCurdy, Michael W., additional, Davidson, Jim L., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Shuvra, Pranoy Deb, additional, Lin, Ji-Tzuoh, additional, McNamara, Shamus, additional, Walsh, Kevin M., additional, Alphenaar, Bruce W., additional, and Alles, Michael L., additional

Published
2017
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55. Pulsed-laser transient testing with tunable wavelength and high resolution for high mobility MOSFETs

Author

Ni, Kai, primary, Sternberg, Andrew L., additional, Zhang, En Xia, additional, Kozub, John A., additional, Jiang, Rong, additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, Lin, Jianqiang, additional, Vardi, Alon, additional, and del Alamo, Jesus, additional

Published
2016
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57. Charge Collection Mechanisms of Ge-Channel Bulk $p$ MOSFETs

Author

Samsel, Isaak K., primary, Zhang, En Xia, additional, Sternberg, Andrew L., additional, Ni, Kai, additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, Schrimpf, Ronald D., additional, Linten, Dimitri, additional, Mitard, Jerome, additional, Witters, Liesbeth, additional, and Collaert, Nadine, additional

Published
2015
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58. Charge Collection Mechanisms in GaAs MOSFETs

Author

Ni, Kai, primary, Zhang, En Xia, additional, Samsel, Isaak K., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Sternberg, Andrew L., additional, McCurdy, Michael W., additional, Ren, Shufeng, additional, Ma, Tso-Ping, additional, Dong, Ling, additional, Zhang, Jing Yun, additional, and Ye, Peide D., additional

Published
2015
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59. Single-Event Transient Response of InGaAs MOSFETs

Author

Ni, Kai, primary, Zhang, En Xia, additional, Hooten, Nicholas C., additional, Bennett, William G., additional, McCurdy, Michael W., additional, Sternberg, Andrew L., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, Kim, Tae-Woo, additional, Lin, Jianqiang, additional, and del Alamo, Jesus A., additional

Published
2014
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60. Charge Collection Mechanisms of Ge-Channel Bulk pMOSFETs.

Author

Samsel, Isaak K., Zhang, En Xia, Sternberg, Andrew L., Ni, Kai, Reed, Robert A., Fleetwood, Daniel M., Alles, Michael L., Schrimpf, Ronald D., Linten, Dimitri, Mitard, Jerome, Witters, Liesbeth, and Collaert, Nadine

Subjects
SINGLE event effects, MOS integrated circuits, SILICON germanium integrated circuits, GERMANIUM, METAL oxide semiconductor field-effect transistors
Abstract

Single-event transients in SiGe MOS devices with ultrathin quantum well channels have been shown in previous work to exhibit opposite polarities for source and drain strikes. This work reports polarity reversal in similar devices with thick Ge channels due to the favorability of prompt hole collection by either the source or drain region, depending on the strike location. A slower charge-collection mechanism is also present due to the n-well/p-substrate structure, which allows ion-generated carriers from the substrate to flood the body of the device. [ABSTRACT FROM PUBLISHER]

Published
2015
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61. The Small Satellite (CubeSat) Program as a Pedagogical Framework for the Undergraduate EE Curriculum.

Author

Holman, W. Timothy, Sierawski, Brian David, Reed, Robert, Weller, Robert A., Sternberg, Andrew L., Austin, Rebekah, and Fleetwood, Daniel M.

Subjects
AEROSPACE engineering study & teaching, ASTRONAUTICS, ARTIFICIAL satellites, HIGHER education, ELECTRICAL engineering education, ENGINEERING students, EDUCATION
Abstract

The small satellite (CubeSat) concept provides a means for Vanderbilt University students to become directly involved in the design and launch of space systems. In this paper, we illustrate how our small satellite research program is being used to introduce fundamental circuit design concepts to undergraduate electrical engineering (EE) courses, and to reinforce student comprehension of their use in modern integrated systems. [ABSTRACT FROM AUTHOR]

Published
2014

64. The Effects of Elevated Temperature on Pulsed-Laser-Induced Single Event Transients in Analog Devices.

Author

Dakai Chen, Buchner, Stephen P., Phan, Anthony M., Kim, Hak S., Sternberg, Andrew L., McMorrow, Dale, and LaBel, Kenneth A.

Subjects
ANALOG integrated circuits, HIGH temperatures, BIPOLAR transistors, SEMICONDUCTORS, LOGIC circuits, DIGITAL electronics
Abstract

We present results of laser-induced analog SETs at elevated temperatures. We found increasing pulse widths with increasing temperature for the LM124. We also observed increasing pulse amplitudes with increasing temperature for several sensitive transistors in the LM139. However the response from the input transistor was a rapidly shrinking SET, suggesting that the SET threshold increases at elevated temperatures for the input stage transistors. In addition we observed increases in the SET leading edge fall times with increasing temperature for the LM139 that are consistent with independently measured slew rates. Simulations revealed that the dominant mechanism is bipolar current gain enhancement at elevated temperatures. These temperature-induced changes to the SETs may have critical implications for radiation hardness assurance. [ABSTRACT FROM AUTHOR]

Published
2009
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65. Failure Estimates for SiC Power MOSFETs in Space Electronics.

Author

Galloway, Kenneth F., Witulski, Arthur F., Schrimpf, Ronald D., Sternberg, Andrew L., Ball, Dennis R., Reed, Robert A., Sierawski, Brian D., Javanainen, Arto, and Lauenstein, Jean-Marie

Subjects
SILICON carbide, METAL oxide semiconductor field-effect transistors, IONIZING shock waves, DIELECTRIC breakdown, SPECTRUM analysis, CHARTS, diagrams, etc.
Abstract

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. [ABSTRACT FROM AUTHOR]

Published
2018
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