Search

International audience; We report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[ 110]// Co(0001)[11 20]//MgO(111)[10 1]//GaN(0002)[11 20]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.

The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $\mu$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field., Comment: initial version, final version to appear in ACS Nano Letters

International audience; Remanent spin injection into a spin light emitting diode (spin-LED) at zero magnetic field is a prerequisite for future application of spin optoelectronics. Here, we demonstrate the remanent spin injection into GaAs based LEDs with a thermally stable Mo/CoFeB/MgO spin injector. A systematic study of magnetic properties, polarization-resolved electroluminescence (EL) and atomic-scale interfacial structures has been performed in comparison with the Ta/CoFeB/MgO spin injector. The perpendicular magnetic an-isotropy (PMA) of the Mo/CoFeB/MgO injector shows more advanced thermal stability than that of the Ta/CoFeB/MgO injector and robust PMA can be maintained up to 400 °C annealing. The remanent circular polarization (P C) of EL from the Mo capped spin-LED reaches a maximum value of 10% after 300 °C annealing, and even remains at 4% after 400 °C annealing. In contrast, the Ta capped spin-LED almost completely loses the remanent P C under 400 °C annealing. Combined advanced electron microscopy and spectroscopy studies reveal that a large amount of Ta diffuses into the MgO tunneling barrier through the CoFeB layer after 400 °C annealing. However, the diffusion of Mo into CoFeB is limited and never reaches the MgO barrier. These findings afford a comprehensive perspective to use the highly thermally stable Mo/CoFeB/MgO spin injector for efficient electrical spin injection in remanence.

Ultrafast control of thin film nanomagnets using femtosecond laser pulses has attracted considerable attention for future ultrafast and energy-efficient photo-spintronics storage/memory devices. Si...

Negative magnetoresistance modifying the quality factor of a microwave cavity under the magnetization switching of ferromagnetic layers has been discovered in a MgO/CoFeB/MgO/Ta film with a single ferromagnetic layer and a MgO/CoFeB/Ta/CoFeB/MgO/Ta spin valve consisting of two ferromagnetic CoFeB layers. The dependence of the first derivative dP/dH of the microwave absorption signal on the dc magnetic field of the spectrometer exactly reproduce the magnetic hysteresis loops of the sample. The slope of these dependences and the amplitude of dP/dH jumps under remagnetization of the layers are determined by the interplay of a negative magnetoresistance of individual layers and a positive giant magnetoresistance of the entire multilayer structure. The discovered phenomenon allows using microwave absorption for making a high-sensitivity contact-free indicator of the basic magnetization states of a spin valve.

International audience; Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong perpendicular ani-sotropy have been systematically studied. Magnetization versus field hysteresis loop has been measured for different temperature ranging from 5 to 300 K. The applied field – temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer's magnetization reversal, interlayer exchange coupling, and Zeeman energy.

International audience; Magnetic configurations in Pt/Co/Ir/Co/Pt synthetic ferrimagnet bilayer of strong perpendicular anisotropy have been systematically studied. Magnetization versus field hysteresis loops have been measured for different temperatures ranging from 5 to 300 K. The applied field e temperature (H-T) magnetization switching diagram has been constructed by extracting the different switching fields as a function of temperature. This switching diagram can be well explained by considering the competition between energy barrier of layer's magnetization reversal, interlayer exchange coupling, and Zeeman energy.

International audience; The crystalline and magnetic properties of micron thick magnetron sputtered Co1−x Crx and Co1−x Nix alloy films are analyzed in the view of their implementation as semi-hard magnets. All of the tested films crystallize in an hcp lattice, at least up to 35 at% of alloying elements (Cr or Ni). The structural study shows that the ratio of hcp phase with [0001] axis orientated perpendicular to the film as compared with in-plane orientation increases (resp. decreases), when Ni (resp. Cr) concentration increases independently of the post-annealing temperature. The orientation of the magnetization results from the competition between the demagnetization field which tends to align the magnetization in plane and the crystalline anisotropy which tends to maintain the magnetization along the [0001] axis. Interestingly, we find that, although Co and Ni are very similar atoms, Co1−x Nix alloys crystalline anisotropy can be strongly increased and reach up to twice the anisotropy of the best Co1−x Crx alloy, while maintaining a magnetization at saturation above 1200 kA/m. The thermal stability of the structural and magnetic properties of both alloys is demonstrated for an annealing temperature up to 300 °C.

Recent demonstration of magnetization manipulation has been focused on the utilization of pure spin current converted by charge current in nonmagnetic materials with strong spin-orbit coupling (SOC), which stimulates intensive studies on the exploration of materials with larger SOC, such as heavy metals and topological insulators. We suggest an alternative approach for enhancing the effective charge-to-spin conversion efficiency by applying strain in Ta/Fe/Pt films grown on flexible mica substrates. We experimentally demonstrate a large and tunable charge-to-spin conversion efficiency in Ta/Fe/Pt films by applying compressive strain within a flexible substrate, and over 50% enhancement of effective spin Hall angle eff SHE of up to approximately 0.2 is achieved in a 6.26‰ strained film. Our findings may spur further work on the integration of flexible electronics and SOC and may potentially lead to the innovation of alternative flexible spintronics devices.

All‐optical helicity‐dependent switching in ferromagnetic layers has revealed an unprecedented route to manipulate magnetic configurations by circularly polarized femtosecond laser pulses. In this work, rare‐earth free synthetic ferrimagnetic heterostructures made from two antiferromagnetically exchange coupled ferromagnetic layers are studied. Experimental results, supported by numerical simulations, show that the designed structures enable all‐optical switching which is controlled, not only by light helicity, but also by the relative Curie temperature of each ferromagnetic layer. Indeed, through the antiferromagnetic exchange coupling, the layer with the larger Curie temperature determines the final orientation of the other layer and so the synthetic ferrimagnet. For similar Curie temperatures, helicity‐independent back switching is observed and the final magnetic configuration is solely determined by the initial magnetic state. This demonstration of electrically‐detected, optical control of engineered rare‐earth free heterostructures opens a novel route toward practical opto‐spintronics., All‐optical helicity‐dependent switching in synthetic ferrimagnetic samples made of two exchanged coupled ferromagnetic layers is shown to depend on the respective Curie temperature of each layer. By varying the CoFeB layer thickness, its Curie temperature can be tuned. Consequently, the switching is set not only by the light helicity but also by the CoFeB thickness.

International audience; We investigate spin-wave resonance modes and their damping in insulating thin films of bismuth-substituted yttrium iron garnet by performing femtosecond magneto-optical pump-probe experiments. For large magnetic fields in the range below the magnetization saturation, we find that the damping of high-order standing spin-wave (SSW) modes is about 40 times lower than that for the fundamental one. The observed phenomenon can be explained by considering different features of magnetic anisotropy and exchange fields that, respectively, define the precession frequency for fundamental and high-order SSWs. These results provide further insight into SSWs in iron garnets and may be exploited in many new photomagnonic devices.

All-optical helicity-dependent switching in ferromagnetic Co/Pt multilayers is investigated using magneto-optical microscopy and anomalous Hall effect measurements. A state diagram is built by studying the effect of pulse duration, fluence, and spot size. We use numerical solutions of the three-temperature model to explain that the all-optical helicity-dependent switching mechanism relies on the spin bath reaching temperatures close to the Curie point. Further insights into the reversal process are provided by the experimental demonstration of significant helicity-dependent reversal after a single laser pulse that reveals the involvement of direct angular momentum transfer. Moreover, based on the observation that longer pulse durations and larger spot sizes lead to enhanced reversal efficiency, we identify experimental conditions that lead to saturated magnetization reversal after just a few tens of laser pulses.

International audience; All-optical switching refers to the magnetization reversal induced by ultrashort laser pulses. Both single-pulse all-optical helicity-independent switching and multiple pulses all-optical helicity-dependent switching have been reported for GdFeCo thin films. In this paper, we demonstrate that for two GdFeCo compositions, the transition between these two behaviors can appear by increasing the thickness of the Pt capping or by tuning the laser fluence. The two types of switching cannot be observed for the same set of parameters, which supports that their mechanisms are uncorrelated. Our calculations indicate that the transition may be induced by a strong inhomogeneity of the electronic temperature within the thickness of the GdFeCo layer in the subpicosecond timescale.

International audience; We present ab initio calculations of the electronic temperature dependence of the magnetization, electronic energy, and specific heat of FePt L1 0 , fcc-Ni, hcp-Co, and bcc-Fe. We find that atomic magnetic moments in each compound disappear at very high temperature, ranging from 3100 to 8100 K. However, for some compounds, the consequences of this phenomenon are noticeable on the electronic energy and specific heat even at low electronic temperature. Consequently, large deviations from the Sommerfeld approximation and from some previous work that did not take into account explicitly the dependence of the electronic structure on the electronic temperature are shown. Our results are of interest in the field of laser-induced ultrafast magnetization dynamics, since they provide a more precise estimate of the electronic specific heat that enters in the three-temperature model.

International audience; We demonstrate that femtosecond laser pulses allow triggering high-frequency standing spin-wave modes in nanoscale thin films of a bismuth-substituted yttrium iron garnet. By varying the strength of the external magnetic field, we prove that two distinct branches of the dispersion relation are excited for all the modes. This is reflected in particular at a very weak magnetic field (∼33 mT) by a spin dynamics with a frequency up to 15 GHz, which is 15 times higher than the one associated with the ferromagnetic resonance mode. We argue that this phenomenon is triggered by ultrafast changes of the magnetic anisotropy via laser excitation of incoherent and coherent phonons. These findings open exciting prospects for ultrafast photo magnonics. The continuous demand for more energy efficient and faster data transport and processing devices has triggered intense research activity to carry information with other means than the electron charge, which is associated with an inevitable Joule heating in current semiconductor-based information technologies [1]. One of the most promising ways to achieve this goal is the use of the coherent collective excitation of spins in magnetic materials, commonly known as magnons or spin waves (SWs) [2-5]. These waves can propagate in both metallic and dielectric magnetic media without involving any charge transport, which avoids the Joule heating, and therefore reduces substantially the power consumption for data processing. Besides this energy efficiency, using SWs offers other important advantages for ultrafast nanoscale computation due to their broad high frequency range from GHz to THz and tunable wavelength down to the nanoscale [6]. From a fundamental point of view, SWs exhibit remarkably rich physics involving both dipolar and exchange interactions [6,7]. This is reflected by versatile dispersion relations containing magnetostatic and exchange modes, which can either be tuned by an external magnetic field (H ext) and/or the sample size [3,6]. In this context, intense research is being carried out to understand the generation, propagation, manipulation, and detection of SWs in a continuously growing field of modern magnetism called magnonics [2-5]. Because of its low magnetic damping constant, the yttrium iron garnet (YIG) has attracted a lot of attention in the field of magnonics [8]. Indeed, many important magnetostatic SWs based devices have been realized using YIG during the last decade [9-12]. However, due to the small saturation magnetization of YIG together with the restrictions imposed by the size of the microwave antennas on the excited SWs wavelength with the standard method of microwave magnetic fields, magnetostatic SWs frequencies in such devices did not exceed a few GHz at low field, which is a major limiting factor for ultrafast applications. On the other hand, due to the strong exchange interaction between spins, the exchange SWs mode can have higher frequencies compared to the magnetostatic one. The possibility of triggering such exchange modes requires a nonuniform dynamical field across the magnetic film thickness [13], which is very challenging to induce using microwave antennas [13-15]. Recently, femtosecond laser pulses have been used as an efficient stimulus to excite a coherent spin precession [16,17]. In particular, it was demonstrated that femtosecond laser pulses can excite exchange standing SWs (SSWs) in metallic [18,19] and semiconductor [20,21] ferromagnets via thermal processes. On the other hand, most studies on iron garnets have been dedicated to the excitation and control of the homogenous resonance mode (k ¼ 0, i.e., low frequency) via nonthermal excitation mechanisms [22-29]. An important question in this context concerns the possibility to take advantage of femtosecond laser pulses for triggering a high frequency SSW in dielectric thin films of iron garnets. In this Letter, we demonstrate femtosecond laser-excited high frequency even and odd SSWs in nanoscale films of Bi-substituted yttrium iron garnet (Bi-YIG). Bi-YIG materials have, in addition to a low damping [30], very large magneto-optical Faraday effects [31], which make them well adapted for new photo magnonics devices. By varying the strength of the external applied magnetic field H ext , we demonstrate two distinct branches of the dispersion relation PHYSICAL REVIEW LETTERS 123, 027202 (2019) 0031-9007=19=123(2)=027202(6) 027202-1

International audience; Study of resonant tunneling through multi-metallic quantum well (QW) structure is not only important for the fundamental understanding of quantum transport but also for the great potential to generate advanced function-alities of spintronic devices. However, it remains challenging to engineer such a structure due to the short electron phase coherence length in metallic QW system. Here, we demonstrate the successful fabrication of double-QW structure in a single fully epitaxial magnetic tunnel junction (MTJ) heterostructure, where two Fe QW layers are sandwiched between three MgAlO x tunnel barriers. We show clear evidence of the coherent resonant tunneling through the discrete QW states in the two QWs. The coherent resonant tunneling condition is fulfilled only when the middle barrier between the two QWs is thin enough and available QW states are present simultaneously in both QWs under a certain bias. Compared to the single QW structure, the resonant tunneling in double-QW MTJ produces strong conductivity oscillations with much narrower peak width (about half) owing to the enhanced energy filtering effect. This study presents a comprehensive understanding of the resonant tunneling mechanism in MTJ with multiple QWs, which is essential for future development of new spintronic devices operating in the quantum tunneling regime. R esonant tunneling in quantum well (QW) structures has been extensively studied because of its importance in the field of nanoelectronic science and technology. 1 Recently, in the metallic QW system the combination of the tunneling magnetoresistance (TMR) 2,3 effect with resonant tunneling through metallic QW states in magnetic tunnel junctions (MTJs) has triggered considerable interest in the new functionality of spintronic devices. 4− 8 In these structures, the discrete spin-dependent QW states can be formed in the middle metallic QW layer sandwiched between two barriers. The QW potential barrier can be formed either by metallic layer using the symmetry-dependent Bloch state orbital band structure, 9− 12 or by a double oxide tunneling barriers with a much higher barrier height for better electron confinement. 13− 15 Because the QW states are often formed in the majority spin channel, 4,8 the conductance in parallel magnetic configuration can be enhanced when the injector Fermi level is aligned with the QW state at resonance, resulting in an enhanced TMR ratio. 4 A record high resonant TMR (≈ 4000%) has been reported for a double barrier MTJ measured with point-contact technique at 4.2 K. 16 In semiconductor materials, multi-QW structures have already been extensively studied, 17 such as resonant-tunneling diode, 18 multi-quantum well light-emitting diode and laser, 19 and so forth. When the thickness of the barrier and QW is thin enough, the multi-QWs form the superlattice structure and the

International audience; charge-spin conversion and ii) the speed of SOT switching. Generally, SOT in a magnetic layer originates from the spin current injection from the adjacent layer with strong spin-orbit coupling (SOC). The charge-spin conversion efficiency is vital and can be quantified as the θ = / SHE s 3D e 3D J J (dimensionless) or q J J t θ = = / / ICS s 3D e 2D SHE s , where s 3D J represents the 3D spin current density; e 3D J and e 2D J represent the 3D and 2D electric (charge) current density, respectively; and t s represents the effective SOC thickness. In the conventional SOC materials such as HMs, in principle, the θ SHE should be much less than 1, which limits their potential applications in the ultralow power magnetization manipulation. [4] In topological insulators (TIs), SOC from topologically protected surface states, where the spin and orbital angular momenta are locked (spin-momentum locking [5-7]), gives rise to a very large θ SHE [8-12] (or q ICS) and the resulting ultralow switching current density [13-15] at low temperature. Recently, several works have reported the room-temperature SOT switching by TIs, [16-19] which opens the door for the applications of topological insulators. However, there are fundamental limitations of FMs: the low switching speed (≈ns) and the stray-field interaction, which limit the operation speed and the density of magnetic memory, respectively. Antiferromagnets (AFMs) can afford the THz ultrafast spin dynamics; [20] however, AFMs produce zero stray field and zero spin polarization because of the opposite coupled spin lattices from the same element, which makes it difficult to detect the antiferromagnetic order efficiently. [21] Ferrimagnets have two antiferromagnetically coupled spin sublattices, and the contribution of each spin sublattice to their properties can be tuned by the composition or temperature. At the magnetic compensation point, ferrimagnets show similar properties of AFMs, such as ultrafast spin dynamics, [22,23] while the detection is still feasible because of the different responses to the optical or electrical excitations from two spin sublattices. [23-25] Here, we combine TIs [Bi 2 Se 3 and (BiSb) 2 Te 3 ] with nearly compensated ferrimagnets [Gd x (FeCo) 1−x ], and investigate the room-temperature SOT in TI/Gd x (FeCo) 1−x systems. By changing the composition of Gd x (FeCo) 1−x , we can tune the net magnetic moment and the dominated spin sublattice (CoFe-rich and Gd-rich). The robust room-temperature SOT switching Utilizing spin-orbit torque (SOT) to switch a magnetic moment provides a promising route for low-power-dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet Gd x (FeCo) 1−x by the topological insulator [Bi 2 Se 3 and (BiSb) 2 Te 3 ] is investigated at room temperature. The switching current density of (BiSb) 2 Te 3 (1.20 × 10 5 A cm −2) is more than one order of magnitude smaller than that in conventional heavy-metal-based structures, which indicates the ultrahigh efficiency of charge-spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gd x (FeCo) 1−x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy-efficient and high-speed spintronic devices. Topological Spintronics Spintronic devices have been considered as one of the promising candidates for the next-generation memory and logic devices, and spin-orbit torque (SOT) provides an efficient way to manipulate the magnetic moment by electrical method with ultralow power dissipation and ultrafast operating speed. [1-3] Beyond previous studies of SOT switching based on conventional heavy metal/ferromagnet (HM/FM) heterostructures, two crucial issues need to be resolved: improving: i) the efficiency of

International audience; The field-and current-induced magnetization reversal of a Co-Fe-B layer in a perpendicular magnetic tunnel junction (pMTJ) is studied at room temperature. The magnetization switching probability from the parallel (P) state to the antiparallel (AP) state and from AP to P is found to be asymmetric. We observe that this asymmetry depends on the magnetic configuration of the synthetic antiferromagnetic (SAF). The state diagram and the energy landscape are compared for two SAF configurations. We conclude that the asymmetry is due to the inhomogeneity of the fringe field generated by the SAF. Our study highlights the role of the reference-layer fringe field on the free layer's energy barrier height, which has to be carefully controlled for memory applications.

International audience; The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric “ailing-channel” in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on $La_{0.6}$$Sr_{0.4}$Mn$O_{3}$/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce “ailing-channels” that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric “ailing-channels” is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of “spinterface”.

In magnetic wires with perpendicular anisotropy, moving domain with only current or only circularly polarized light requires a high power. Here, we propose to reduce it by using both short current pulses and femtosecond laser pulses simultaneously. The wires were made out of perpendicularly magnetized film of Pt/Co/Ni/Co/Pt. The displacement of the domain wall is found to be dependent on the laser helicity. Based on a quantitative analysis of the current-induced domain wall motion, the spin orbit torque contribution can be neglected when compared to the spin transfer torque contribution. The effective field of the spin transfer torque is extracted from the pulsed field domain wall measurements. Finally, our result can be described using the Fatuzzo-Labrune model and considering the effective field due to the polarized laser beam, the effective field due to spin transfer torque, and the Gaussian temperature distribution of the laser spot., 14 pages, 4 figures

International audience; • FeO films were synthesized by pulsed-DC magnetron sputtering from metallic target. • The film oxidation was controlled with a plasma emission monitoring system. • Special attention was paid to the sample position relative to the target axis. • Structural features depend on the oxidation rate of the growing films. • FeO behaviors are tuned from hematite semiconductor to magnetite semimetal properties. A R T I C L E I N F O Keywords: FeO Reactive sputtering Plasma emission monitoring Hematite Magnetite A B S T R A C T Iron oxide films were synthesized by pulsed-DC magnetron sputtering from a metallic target in Ar and O 2 gas mixtures. Plasma emission monitoring was implemented to accurately control the metal-to-oxygen ratio in the coating through the chemical state of the iron target. The intensity of the Fe* emission line was maintained at a given value (setpoint) by regulating the introduced oxygen flow rate. In addition, the oxidation rate of the growing film was adjusted by controlling the oxidation-to-deposition rate ratio as a function of the position of the substrates relative to the magnetron axis. The iron oxide films were characterized by X-ray diffraction, UV-VIS spectrophotometry, electrical measurement and vibrating sample magnetometry. In addition to the crys-tallization of pure hematite and magnetite phases, both phases coexist in a transition domain for a short range of setpoint depending on the oxidation-to-deposition rate ratio. The electrical, optical and magnetic behaviors of the FeO x films suggest that the relative proportion of phases can be tailored in this range. The FeO x film behaviors can then be tuned from the hematite semiconductor properties to the semi-metallic magnetite properties .

International audience; Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal–semiconductor–metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO–Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO–Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.

We study the influence of a second order magnetic anisotropy on magnetization reversal by spin transfer torque in perpendicularly magnetized magnetic tunnel junctions (pMTJs). Using a macrospin model to describe the dynamics of the free layer, analytical solutions for the switching voltage and the voltage threshold for precession are determined as a function of the first and second order magnetic anisotropies. To compare the spin-transfer-torque energy efficiency to that of a classical pMTJ, a junction without the second order anisotropy term, we compare these cases at a fixed energy barrier to thermally activated reversal. We show that the critical voltage for switching can be reduced by a factor 0.7 when the ratio of the second to the first order magnetic anisotropy is 1/3. Importantly, the switching time can be reduced by nearly a factor of two for this magnetic anisotropy ratio. These results highlight an important and practical method to increase the spin-torque efficiency, while reducing the energy dissipation and switching time in magnetic random access memory devices.We study the influence of a second order magnetic anisotropy on magnetization reversal by spin transfer torque in perpendicularly magnetized magnetic tunnel junctions (pMTJs). Using a macrospin model to describe the dynamics of the free layer, analytical solutions for the switching voltage and the voltage threshold for precession are determined as a function of the first and second order magnetic anisotropies. To compare the spin-transfer-torque energy efficiency to that of a classical pMTJ, a junction without the second order anisotropy term, we compare these cases at a fixed energy barrier to thermally activated reversal. We show that the critical voltage for switching can be reduced by a factor 0.7 when the ratio of the second to the first order magnetic anisotropy is 1/3. Importantly, the switching time can be reduced by nearly a factor of two for this magnetic anisotropy ratio. These results highlight an important and practical method to increase the spin-torque efficiency, while reducing the energy ...

By conducting helicity-dependent ultrafast magnetization dynamics in a CoTb ferrimagnetic alloy, we are able to quantitatively determine the magnetic circular dichroism (MCD) and resolve its role in the helicity-dependent all-optical switching (AOS). Unequivocal interpretation of the sign of the dichroism is provided by performing AOS and femtosecond laser-induced domain wall motion experiments. We demonstrate that AOS occurs when the magnetization is initially in the most absorbent state, according to the light helicity. Moreover, we evidence that the MCD creates a thermal gradient that drives a domain wall toward hotter regions. Our experimental results are in agreement with the purely thermal models of AOS.

International audience; The evolution of the switching field between stable states in MgO/CoFeB/Ta/CoFeB/MgO/GaAs and Pt/Co/Ir/Co/Pt/Ta/SiO2 synthetic ferrimagnets with perpendicular anisotropy as a function of the magnetic field sweeping rate (MFSR) 0.1-10 4 Oe/s has been studied. The most significant effect of the MFSR is an inversion of interstate transitions sequence. In the MgO/CoFeB/Ta/CoFeB/MgO/GaAs heterostructure, the increase of MFSR switches the dominant mechanism of magnetization reversal from propagation of domain walls to a nucleation of reversed magnetization areas. In Pt/Co/Ir/Co/Pt/Ta/ SiO2, the MFSR affects the final domain state of the transition, starting from the initial antiparallel configuration of the synthetic ferrimagnet.

International audience; We use density functional theory to quantitatively compute the effect of light absorption in ferromagnetic materials. We show that, in the presence of spin-orbit coupling, optically induced transitions do not conserve the magnetization and that a systematic induced demagnetization, whose magnitude depends on both the helicity of the light and the direction of the magnetization, is observed. Very differently from the inverse Faraday effect, this mechanism is due to the absorption of light and depends on the magnetic state of each atom, and therefore cannot be described by an effective optomagnetic field. Then, based on these results, we derive a set of parameters which can be used in micromagnetic simulations in order to account for light transition effects on the magnetization dynamics. To face the continuing demand for large density and energy efficient data storage devices, the possibilities of magnetiza-tion manipulation without using a magnetic field are widely being investigated [1]. One of the promising candidates is the all-optical helicity-dependent switching (AO-HDS), as it allows the control of the magnetization state by only using circularly left (σ +) or right (σ −) polarized light pulses of a few tens of femtoseconds. AO-HDS has been observed in a wide range of materials such as GdFeCo ferrimagnetic alloys [2], rare earth-transition metal alloys and multilayers [3,4], and FePt L1 0 granular media [5] which is considered promising for ultrahigh-density storage devices. This outstanding diversity of materials suggests a common underlying mechanism, although it remains debated. To explain the AO-HDS, the two theoretical explanations usually invoked in the literature are the inverse Faraday effect (IFE) [2,4-6] and a difference of absorption induced by the magnetic circular dichroism (MCD) [7,8]. While the IFE was first introduced to describe the influence of the presence of a circularly polarized light on the magnetic state of transparent media [9], Battiato et al. showed that, without any assumption on the nature of the material, light generates a static contribution at the second-order perturbation in the density matrix [10,11], which they hold responsible for the IFE in lossy media. However, in this approach [10] the repopulation at the origin of the IFE does not grow linearly with time, as it would be the case for an absorption-related phenomenon, and it fades away after the perturbation has been switched off. This fact leaves a gap between the IFE and the mechanism involved in the irreversible change of magnetization leading to the AO-HDS phenomenon [12]. Then, using this formulation and density functional theory, Berritta et al. [13] computed the value of this contribution for different types of materials. Conversely , the second effect, due to MCD, relies on a difference of absorption inducing a different temperature depending on * philippe.scheid@univ-lorraine.fr the relative orientation of the magnetization and the helicity of the light. Through this thermal effect, the switching probability depends on the magnetization orientation, as shown by several parametrized models [7,8]. Moreover, its probabilistic and absorption-based nature is in agreement with the fact that the AO-HDS phenomenon is cumulative, i.e., it requires multiple pulses [4], as well as a large absorptivity of the compound.

International audience; The magnetic and magneto-caloric properties of (Gd1−xTbx) alloy thin films and [Gd/Tb] multilayers have been investigated. All the samples had a total thickness of 100 nm and were deposited by DC sputtering. By changing the composition of the system, the ordering temperature (Tc) and the magnetic entropy changes of the compounds could be tuned. The results show that the Tc of the alloy thin films is close to 270 K for x = 0.2. Moreover, creating [Gd/Tb] multilayers with the same thickness and concentration of the studied Gd80Tb20 alloy film enables to strongly increase the relative cooling power, and reach values twice as big as from the corresponding alloys. These results suggest that nanostructuring of [Gd/Tb] multilayers may be a promising route to tailor the magnetocaloric response of materials.

International audience; Nonvolatile magnetic random-access memory is one of the most promising memory candidates to meet the requirements of high-density and low-power data storage. Downsize scalability and energy efficiency of conventional memory-unit cells with elliptic shape, however, remain matters of great concern. The development of alternative memory-unit-cell architecture that would potentially enhance the performance of practical devices is thus particularly interesting for applications. Here the magnetic configurations for nanoring magnetic tunnel junctions with an in-plane magnetic storage layer are studied by micromagnetic simulation, revealing that, for an appropriate ring width, the outer diameter can be scaled down to less than 20 nm, where the magnetic onion configuration becomes energetically favored. We also study the spin-transfer-torque switching process and dynamic resistance state diagram with respect to the applied magnetic field and spin-polarized current. A low switching-current density is demonstrated. The results indicate the advantage of using nanoring magnetic tunnel junctions as memory units, which may provide an alternative solution for high-storage-density and low-power-consumption nonvolatile memory.

Shape-anisotropy magnetic tunnel junctions (MTJs) are attracting much attention as a high-performance nonvolatile spintronic device in the X/1X nm regime. In this study, we investigate an energy barrier relevant to the retention property in CoFeB/MgO-based shape-anisotropy MTJs with various diameters at high temperatures and compare it with that in conventional interfacial-anisotropy MTJs. We find that the scaling relationship between the energy barrier and the spontaneous magnetization in shape-anisotropy MTJs is well described by a model assuming the dominant contribution of shape anisotropy to the energy barrier. Also, the scaling exponent is much smaller than that for the interfacial-anisotropy MTJs, indicating that the properties of shape-anisotropy MTJs are less sensitive to the temperature. Using the experimentally determined scaling relationship, we discuss the design window of the MTJ dimensions to achieve data retention of 10 years at various temperatures. This study demonstrates that the shape-anisotropy MTJ holds promise of scaling beyond 20 nm for high-temperature applications.

International audience; Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co=Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based on hot electron ballistic transport implemented within a microscopic model that accounts for local dissipation of angular momentum nicely reproduce the experimental results, ruling out contribution of pure thermal transport.

International audience; Combining multiple degrees of freedom in strongly correlated materials such as transition-metal oxides would lead to fascinating magnetic and magnetocaloric features. Herein, the strain effects are used to markedly tailor the magnetic and magnetocaloric properties of PrVO3 thin films. The selection of an appropriate thickness and substrate enables us to dramatically decrease the coercive magnetic field from 2.4 T previously observed in sintered PVO3 bulk to 0.05 T for compressive thin films making from the PrVO3 compound a nearly soft magnet. This is associated with a marked enhancement of the magnetic moment and the magnetocaloric effect that reaches unusual maximum values of roughly 4.86 μB and 56.8 J/kg K with the magnetic field change of 6 T applied in the sample plane in the cryogenic temperature range (3 K), respectively. This work strongly suggests that taking advantage of different degrees of freedom and the exploitation of multiple instabilities in a nanoscale regime is a promising strategy for unveiling unexpected phases accompanied by a large magnetocaloric effect in oxides.

Logic computing in magnetic domain walls is investigated using the interplay of all-optical helicity-dependent switching and current-induced spin–orbit torque switching. By simultaneously controlling current and laser pulses, logic functions of AND, OR, NAND, and NOR are experimentally demonstrated through the anomalous Hall effect and verified by micromagnetic simulations. The optoelectronic domain-wall motion is energy-efficient compared to the traditional all-current approach and provides another degree of freedom for the realization of logic applications.

Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping, responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond timescale. Here, engineered Co2 MnAlx Si1- x Heusler compounds are used to adjust the degree of spin polarization at the Fermi energy, P, from 60% to 100% and to investigate how they correlate with the damping. It is experimentally demonstrated that the damping decreases when increasing the spin polarization from 1.1 × 10-3 for Co2 MnAl with 63% spin polarization to an ultralow value of 4.6 × 10-4 for the half-metallic ferromagnet Co2 MnSi. This allows the investigation of the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1 - P and, as a consequence, to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, the high-quality Heusler compounds allow control over the band structure and therefore the channel for spin angular momentum dissipation.

We report on the growth and study of Co-Fe-B/MgO/Ge(001) spin photodiode by using a combination of both molecular beam epitaxy (MBE) and sputtering methods. An epitaxial growth of MgO on Ge in MBE is achieved by the deposition of MgO at room temperature (RT) followed by a post-growth anneal-ing at 300 °C. The spin detector, which consists of 1.1-nm ultrathin Co-Fe-B layer capped with 5-nm Ta is subsequently grown by sputtering at RT. After a post-growth annealing of the whole structure at 250 °C, we obtain clear evidence of a strong perpendicular magnetic anisotropy in the temperature range 10-300 K. Co-Fe-B/MgO/Ge(001) heterojunctions are then processed into spin photodiodes demonstrating at zero magnetic field a photocurrent helicity asymmetry of about 0.9% at 9 K and 0.1% at RT at the telecommunication wavelength of 1310 nm. The demonstration of a spin photodiode working at a telecommunication wavelength with zero applied magnetic field is of great interest for future applications of the optical transport of spin information.

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector [1]. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately 235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. In this talk, we will present the main issues of the spin-injection problem at ferromagnet/Tunnel barrier/MoS2 interfaces as well as the spin-propagation in multilayered channel like played by MoS2 involving Schottky depletion layers giving thus an extension to earlier modeling of spin-injection in ferromagnet/ssource/ferromagnet systems [2-3]. [1] Shiheng Liang et al., Nat. Comm. 8, 14947 (2017) [2] A. Fert, H. Jaffres, Phys Rev B64, 184420, 2001 [3] A. Fert, J.-M. George, H. Jaffres, R. Mattana, IEEE, 54, 921-932 (2007)

We investigated a possible correlation between spin Hall angles and exchange bias in Ni 81 Fe 19 /IrMn samples by performing spin-torque ferromagnetic resonance measurements. This correlation is probed by patterning of Ni 81 Fe 19 /IrMn bilayers in different relative orientations with respect to the exchange bias direction. The measured voltage spectra allow a quantitative determination of spin Hall angles, which are independent of the exchange bias orientation around 2.8 ± 0.3%.

International audience; Aftereffect measurements have been performed on synthetic ferrimagnets showing strong perpendicular magnetic anisotropy, namely (Co/Pt)/Ir/(Co/Pt), by measuring the magnetization of the sample as a function of time for several different applied magnetic fields. Unexpected magnetic relaxation has been observed. Indeed, for some particular applied magnetic fields, the magnetization as a function of time first plummets and then increases. This nonmonotonic aftereffect can be understood by considering the possible magnetic states and the transitions between those states. This understanding has been confirmed and detailed using magneto-optical Kerr effect (MOKE) microscopy. Indeed, the measurements show nucleation and propagation of a transient metastable magnetic configuration. Furthermore, we were able to obtain a good qualitative agreement between a simple one-dimensional model and the experimental observation. We could strongly support the hypothesis that this peculiar nonmonotonic behavior could be a very general feature that should be observed in any antiferromagnetically coupled system (synthetic ferrimagnets, synthetic antiferromagnets) with perpendicular magnetic anisotropy.

International audience; We investigated the current-induced domain-wall (DW) depinning for various applied magnetic fields on a well-indentified single pinning site in epitaxial Co/Ni-based spin-valve wire of micronic width. The DW depinning process occurs with thermal activation involving a single energy barrier associated with a single pinning site. By measuring the DW depinning probability for various positive and negative applied fields (H+,H−) and currents (I+,I−), we built a map highlighting regions where spin-transfer torque (STT) effect, Joule heating, and Oersted field dominate. We then propose a method to quantify characteristic parameters of both adiabatic and nonadiabatic components of STT despite the presence of other effects due to current injection. The suitability of the method is validated by the fact the extracted values are close to those obtained previously on single [Co/Ni] layer where Oersted field and Joule effects were negligible.

All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is explored for future ultrafast and energy-efficient magnetic storage and memories. It is shown that femtosecond (fs) light pulses induce magnetization reversal in a large variety of magnetic materials. However, so far, only GdFeCo-based ferrimagnetic thin films exhibit magnetization switching via a single optical pulse. Here, the single-pulse switching of Co/Pt multilayers within a magnetic spin-valve structure ([Co/Pt]/Cu/GdFeCo) is demonstrated and four possible magnetic configurations of the spin valve can be accessed using a sequence of single fs light pulses. The experimental study reveals that the magnetization final state of the ferromagnetic [Co/Pt] layer is determined by spin-polarized currents generated by the light pulse interactions with the GdFeCo layer. This work provides an approach to deterministically switch ferromagnetic layers and a pathway to engineering materials for opto-magnetic multi-bit recording.

In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)] single-crystalline stacks grown by molecular beam epitaxy., 11 pages, 11 figures, 1 Table

International audience; Understanding and controlling the magnetization dynamics on the femtosecond timescale is becoming indispensable both at the fundamental level and to develop future technological applications. While direct laser excitation of a ferromagnetic layer was commonly used during the past twenty years, laser induced hot-electrons femtosecond pulses and subsequent transport in magnetic multilayers has attracted a lot of attention. Indeed, replacing photons by hot-electrons offers complementary information to improve our understanding of ultrafast magnetization dynamics and to provide new possibilities for manipulating the magnetization in a thin layer on the femtosecond timescale. In this review, we report on experiments of hot-electrons induced ultrafast magnetic phenomena. We discuss the role of hot-electrons transport in the ultrafast loss of magnetization in magnetic single and multilayers and how it is exploited to trigger magnetization dynamics in magnetic multilayers.

International audience

We investigate spin-orbit torque (SOT)-induced switching in rare-earth-transition metal ferrimagnetic alloys using W/CoTb bilayers. The switching current is found to vary continuously with the alloy concentration, and no reduction in the switching current is observed at the magnetic compensation point despite a very large SOT efficiency. A model based on coupled Landau-Lifschitz-Gilbert (LLG) equations shows that the switching current density scales with the effective perpendicular anisotropy which does not exhibit strong reduction at the magnetic compensation, explaining the behavior of the switching current density. This model also suggests that conventional SOT effective field measurements do not allow one to conclude whether the spins are transferred to one sublattice or just simply to the net magnetization. The effective spin Hall angle measurement shows an enhancement of the spin Hall angle with the Tb concentration which suggests an additional SOT contribution from the rare earth Tb atoms.

Using femtosecond optical pulses, we have investigated the ultrafast magnetization dynamics induced in a dielectric film of bismuth-substituted yttrium iron garnet (Bi-YIG) buried below a thick Cu/Pt metallic bilayer. We show that exciting the sample from Pt surface launches an acoustic strain pulse propagating into the garnet film. We discovered that this strain pulse induces a coherent magnetization precession in the Bi-YIG at the frequency of the ferromagnetic resonance. The observed phenomena can be explain by strain-induced changes of magnetocristalline anisotropy via the inverse magnetostriction effect. These findings open new perspectives toward the control of the magnetization in magnetic garnets embedded in complex heterostructure devices., Comment: 15 pages, 4 figures

International audience; Two synthetic antiferromagnet bilayer systems with strong perpendicular anisotropy CoFeB/Ta/CoFeB and Pt/Co/Ir/Co/Pt have been grown using sputtering techniques. For both systems two types of magnetization transitions have been studied. The first one concerns transitions from a state where magnetizations of the two magnetic layers are parallel (P state) to a state where magnetizations of the two layers are aligned antiparallel (AP state). The second one concerns transitions between the two possible antiparallel alignments (AP+ to AP−). For both systems and both transitions after-effect measurements can be understood in the frame of nucleation—propagation model. Time derivative analysis of magnetic relaxation curves and mapping of the first order reversal curves at different temperature allowed us to demonstrate the presence of different pinning centers, which number can be controlled by magnetic field and temperature.

International audience; The spin Seebeck effect provides an easy way to create and manipulate spin current. Schreier et al. experimentally observed a decrease of spin Seebeck voltage at high frequencies in the yttrium iron garnet/Pt system [Phys. Rev. B 93, 224430 (2016)]. The frequency dependence was attributed to the magnon spectrum. Here we provide a different explanation using the frequency dependence of the ac spin current. By combining a phenomenological two-temperature model with the ac-temperature method, our calculation shows that the frequency dependence of the spin current is determined by the thermal wavelength and the thermal boundary conditions of the phonons and the magnons.

International audience; The observation of all-optical helicity-dependent switching (AO-HDS) in ferri- and ferro-magnetic materials depends not only on the saturation magnetization, but on the magnetic domain size which takes into account the competition between the demagnetizing energy and the domain wall (DW) energy. In this paper, we study the optical response of Co/Pt multilayers for which perpendicular magnetic anisotropy can be tuned using He+ -irradiation. This allows us to correlate the observation of AO-HDS with the magnetic properties of the He+ -irradiated multilayer. These results give direct evidence of the crucial role of the DW energy in the laser-induced switching process.

International audience; Long magnetic relaxation (up to few hours) between stable magnetic states was analyzed in Pt/Co/Ir/Co/ Pt/GaAs heterostructures of different Co layers thickness. The experimental data were compared to a large variety of theoretical models amongst which the Fatuzzo-Labrune one seems to be the more relevant. The contributions from domain nucleation and domain wall motion to magnetic relaxation of the spin valves were separated and evaluated. The increase of Co layer thickness suppresses the domain nucleation and enhances the domain wall propagation. The obtained data provide an understanding of the limitations of switching time in the spin valves of large area necessary for GMR biosensors.

International audience; Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmionbased memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate controlled generation of skyrmion bubbles and skyrmion bubble lattices from a ferromagnetic state in sputtered ultrathin magnetic films at room temperature by a single ultrafast (35 fs) laser pulse. The skyrmion bubble density increases with the laser fluence, and it finally becomes saturated, forming disordered hexagonal lattices. Moreover, we present that the skyrmion bubble lattice configuration leads to enhanced topological stability as compared to isolated skyrmions, suggesting its promising use in data storage. Our findings shed light on the optical approach to the skyrmion bubble lattice in commonly accessible materials, paving the road toward the emerging skyrmion-based memory and synaptic devices.