261 results on '"Sibirev, N. V"'
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52. Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb
53. The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy
54. A modified Kolmogorov model and the growth rate of a crystal face of arbitrary size
55. Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism
56. Kinetics of spontaneous formation of core shell structure in (In,Ga)As nanowires
57. Factors influencing the length distributions of vapor-liquid-solid nanowires
58. Model for nucleation of catalyst-free III-V nanowires on patterned substrates
59. Computer simulation of coherent island growth in Ge/Si and InAs/GaAs systems
60. Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates
61. Nanodimensional whisker growth by the generalized vapor-liquid-crystal mechanism
62. Time variation of the mean quantum dot size at the kinetic growth stage
63. The model for in-plane and out-of-plane growth regimes of semiconductor nanowires
64. On the possibility of growing antimonide nanowires in the metastable wurtzite phase
65. Rate equation approach to understanding the ion-catalyzed formation of peptides.
66. Theoretical analysis of the length distributions of Ga-catalyzed GaAs nanowires
67. Narrowing the length distributions of self-assisted III-V nanowires by nucleation antibunching
68. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases
69. Modeling of semiconductor nanowire selective-area MOCVD growth
70. Sub-Poissonian length distributions of vapor–liquid–solid nanowires induced by nucleation antibunching
71. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires
72. Contribution of droplet volume fluctuation to dispersion of nanowire length
73. Self-induced GaN nanowire growth: surface density determination
74. Factors Influencing the Interfacial Abruptness in Axial III–V Nanowire Heterostructures
75. Composition-dependent interfacial abruptness in Au-catalyzed Si1- xGex/Si/Si1- xGex nanowire heterostructures
76. Modeling of axial heterostructure formation in ternary III-V nanowires
77. Self-limiting growth and bimodal size distribution of Au nanoislands on InAs(111)B surface
78. Catalyst-free growth of InAs nanowires on Si (111) by CBE
79. Analytic scaling function for island-size distributions
80. Size distributions, scaling properties, and Bartelt-Evans singularities in irreversible growth with size-dependent capture coefficients
81. ELASTIC ENERGY RELAXATION AND CRITICAL THICKNESS FOR PLASTIC DEFORMATION IN CORE-SHELL InGaAs/GaAs NANOPILLARS
82. READSORPTION ASSISTED MODEL OF III-V NANOWIRE GROWTH
83. Cobalt epitaxial nanoparticles on CaF2/Si(111): Growth process, morphology, crystal structure, and magnetic properties
84. Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy
85. New Mode of Vapor−Liquid−Solid Nanowire Growth
86. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires
87. Stress-Driven Nucleation of Three-Dimensional Crystal Islands: From Quantum Dots to Nanoneedles
88. Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
89. Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure
90. Role of nonlinear effects in nanowire growth and crystal phase
91. Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
92. Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates
93. Growth kinetics and crystal structure of semiconductor nanowires
94. Shape modification of III-V nanowires: The role of nucleation on sidewalls
95. Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
96. Influence of MBE growth conditions on the surface morphology of Al(Ga)As nanowhiskers
97. Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
98. Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
99. On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature
100. Analysis of the dispersion equation for the Schrödinger operator on periodic metric graphs
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