333 results on '"Shashkin, V. I."'
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52. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors
53. Planar detectors for multielement systems of millimeter-wave imaging
54. Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters
55. Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm
56. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
57. Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics
58. Effect of roughness of two-dimensional heterostructures on weak localization
59. A study of the properties of the structures with Al nanoclusters incorporated into the GaAs matrix
60. Electrical properties of metal-semiconductor nanocontacts
61. Electron transport effects in the IR photoconductivity of InGaAs/GaAs structures with quantum dots
62. On the role of tunneling in metal-semiconductor nanocontacts
63. Theory of tunneling current in metal-semiconductor contacts with subsurface isotype δ-doping
64. Experimental investigation of a matrix receiver for a 3-mm waveband imaging system
65. Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy
66. Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
67. Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs
68. The accuracy of reconstructing the semiconductor doping profile from capacitance-voltage characteristics measured during electrochemical etching
69. Subnanometer resolution in depth profiling using glancing Auger electrons
70. Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates
71. Fiber-optic equipment for monitoring technological processes
72. Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region
73. Qualitative sims analysis of28,29,30Si isotope concentration in silicon using a Tof.Sims-5 Setup
74. Low-barrier Mott diodes with near-surface polarization-induced δ-doping
75. Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride
76. Comparative analysis of morphology and optical properties of GaN layers on sapphire
77. Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride
78. Diagnostics of low-barrier Schottky diodes with near-surface δ-doping
79. Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots
80. Deep states in silicon δ-doped GaAs
81. Characterization of GaAs/ InxGa1−x As quantum-dot heterostructures by electrical and optical methods
82. MOVPE of structures with aluminum nanocluster layers in a GaAs matrix
83. Diagnostics of cap layers in InAs(N) quantum-dot multilayer structures on GaAs(001), grown by metal-organic vapor-phase epitaxy
84. Simple method for reconstructing the doping fine structure in semiconductors from C–V measurements in an electrolytic cell
85. Features of GaN growth attained by metal-organic vapor-phase epitaxy in a low-pressure reactor
86. InGaAs/GaAs quantum dot heterostructures for 3–5 μm IR detectors
87. Growth of BGaAs layers on GaAs substrates by metal-organic vapor-phase epitaxy
88. Electroluminescent properties of heterostructures with GaInNas quantum wells
89. Effect of the conditions of metal-organic chemical-vapor epitaxy on the properties of GaInAsN epitaxial films
90. Effect of the parameters of sapphire substrates on the crystalline quality of GaN layers
91. Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas.
92. A new method for determining the sharpness of InGaAs/GaAs heterojunctions by auger depth profiling
93. New approach to the analysis of negative magnetostriction in two-dimensional structures
94. Electron State Symmetries and Optical Selection Rules in the (GaAs)m(AlAs)n Superlattices Grown along the [001], [110], and [111] Directions
95. Analytical solution for the potential distribution in a stripe Schottky contact.
96. Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films.
97. Study of Electrophysical Characteristics of pHEMT Heterostructures by the Methods of Impedance Spectroscopy
98. Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon
99. Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
100. Competition between the barrier and injection mechanisms of nonlinearity of the current-voltage characteristic in Mott-barrier detector diodes.
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