92 results on '"Schaekers M"'
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52. Impact of material/process interactions on the properties of a porous CVD-O3 low-k dielectric film
53. RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications
54. Gate Dielectrics for High Performance and Low Power CMOS SoC Applications
55. SiON Gate Dielectric Formation by Rapid Thermal Oxidation of Nitrided Si.
56. Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics.
57. Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications.
58. Impact of gate oxide nitridation process on 1/f noise in 0.18 μm CMOS
59. Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence
60. Integration feasibility of porous SiLK* semiconductor dielectric
61. In-line electrical characterization of ultrathin gate dielectric films.
62. Implementation of a Si-rich SiON nucleation layer for an improved selective SiGe HBT architecture.
63. NO post annealed oxide versus re-oxidised NO oxide.
64. Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies.
65. Quantitative Analysis of Trace Metals in Silicon Nitride Films by a Vapor Phase Decomposition/Solution Collection Approach
66. Cost-effective cleaning and high-quality thin gate oxides
67. Chlorine Precursors For Gate Oxidation Processes
68. Effect of Chemicals on Metal Contamination on Silicon Wafers
69. Development of ALD HfZrOx with TDEAH/TDEAZ and H2O.
70. Gate Stack Optimisation for Advanced CMOS Process.
71. Cost-effective cleaning for advanced Si-processing.
72. Low Temperature Poly-Si TFT's with Various Source/Drain Processing Techniques
73. Cu/LKD-5109 damascene integration demonstration using FF-02 low-k spin-on hard-mask and embedded etch-stop.
74. Impact of gate oxide nitridation process on 1/f noise in 0.18 mm CMOS
75. CD control using SiON BARL processing for sub-0.25 @mm lithography
76. Tantalum-based gate electrode metals for advanced cmos devices
77. Ketenyl radical yield of the elementary reaction of ethyne with atomic oxygen at 290-540 K
78. The ketyl radical in the oxidation of ethyne by atomic oxygen at 300-600 K
79. Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications
80. Implementation of a Si-rich SiON nucleation layer for an improved selective SiGe HBT architecture
81. Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line
82. A new modified HF-last cleaning process for high-performance gate dielectrics
83. Cu/LKD-5109 damascene integration demonstration using FF-02 low-k spin-on hard-mask and embedded etch-stop
84. Cost-effective cleaning for advanced Si-processing
85. Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential.
86. Highly efficient grating coupler between optical fiber and silicon photonic circuit.
87. A new modified HF-last cleaning process for high-performance gate dielectrics.
88. 1.5?10?9 ?cm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation.
89. Round robin investigation of silicon oxide on silicon reference materials for ellipsometry
90. Development of ALD HfZrOxwith TDEAH/TDEAZ and H2O
91. High-k Dielectrics and Metal Gates for Future Generation Memory Devices
92. Ultrathin NiGe films prepared via catalytic solid-vapor reaction of Ni with GeH(4).
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