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The disease COVID-19 is brought on by the acute respiratory syndrome coronavirus 2 (SARS-CoV-2) First appeared in China in December 2019 and quickly spread around the world after being declared a worldwide pandemic by the World Health Organization in March 2020. COVID-19, Medical Laboratory Professionals, SARS-COV-2, Diagnostic, Importance and difficulties for testing were the selected terms to search the databases of PubMed and Google Scholar for previously published material. Many diagnostic tests are applied in corona virus detection like Droplet Digital PCR (ddPCR), Multiplex PCR, Loop-mediated Isothermal Amplification (LAMP) and more. There is a lack of availability of molecular and serologic tests that have been clinically validated or authorized by national or international regulatory bodies. Clinical laboratory experts are tackling threats to our global defense and wellness, including infectious diseases. The opportunity to express gratitude to the unsung medical laboratory heroes and COVID0-19 pandemic allies is now greater than ever. Each year, Medical Laboratory Professionals Week should honors those who contribute key diagnostic data that help save lives. This review article explore overall summary on testing methods including Important and Difficult Tasks for Medical Laboratories which will provide good message for better public health matter.

SummaryPlants deposit lignin in the secondary cell wall as a common response to drought and pathogen attacks. Cell wall localized multicopper oxidase family enzymes LACCASES (LACs) catalyze the formation of monolignol radicals and facilitate lignin formation. We show an upregulation of the expression of severalLACgenes and a downregulation of microRNA397 (CamiR397) in response to natural drought in chickpea roots. CamiR397 was found to targetLAC4andLAC17Lout of twenty annotatedLACs in chickpea. CamiR397 and its target genes are expressed in root. Overexpression of CamiR397 reduced expression ofLAC4andLAC17Land lignin deposition in chickpea root xylem causing reduction in xylem diameter. Downregulation of CamiR397 activity by expressing a short tandem target mimic (STTM397) construct increased root lignin deposition in chickpea. CamiR397-overexpressing (miR397OX) and STTM397 chickpea lines showed sensitivity and tolerance, respectively, to drought. Infection with a fungal pathogenMacrophomina phaseolina, responsible for dry root rot disease in chickpea, induced local lignin deposition andLACgene expression. CamiR397-overexpressing and STTM397 chickpea lines showed more sensitivity and tolerance, respectively, to dry root rot. Our results demonstrated the regulatory role of CamiR397 in root lignification during drought and dry root rot in an agriculturally important crop chickpea.

Nb-1%Zr-0.1%C alloy is mostly used in high-temperature reactor (HTR) as a structural material, due to its high-temperature strength, resistance to irradiation and nuclear environment. In the present study, the issues related to control and optimization of laser welding parameters are dealt in order to obtain the welded joints with satisfactory strength and ductility. Laser butt welding of 0.5 mm thin sheets is conducted in continuous wave mode to analyze the significance and influence of process parameters, i.e., beam diameter, welding speed and laser power on the mechanical and metallurgical properties of the joints. Welding speed is found to be the most significant process parameter, which controls the changes in the mechanical and metallurgical properties. Bead profile, hardness, tensile strength, microstructural and phase variations in these joints are evaluated to study their dependence on the welding speed varied in the three levels of 1000 mm/min, 1250 mm/min and 1500 mm/min. Welding speed alters the cooling rate; cooling rate regulates the grain refinement, phase change and ultimately alters the hardness, and tensile strength of the fusion zone (FZ). The increment in hardness value in the FZ and loss of ductility as compared to base metal can be attributed to some hard and brittle phases (Nb6C5 and NbC) formed due to increased welding speed. The failure of the welded joints after the tension tests is observed to be located in both FZ and the base metal, that indicates both the brittle and ductile modes of failure in the FZ of the samples having hardness value (VHN)>410 and base metal, respectively.

Domestication is a dynamic and ongoing process of transforming wild species into cultivated species by selecting desirable agricultural plant features to meet human needs such as taste, yield, storage, and cultivation practices. Human plant domestication began in the Fertile Crescent around 12,000 years ago and spread throughout the world, including China, Mesoamerica, the Andes and Near Oceania, Sub-Saharan Africa, and eastern North America. Indus valley civilizations have played a great role in the domestication of grain legumes. Crops, such as pigeon pea, black gram, green gram, lablab bean, moth bean, and horse gram, originated in the Indian subcontinent, and Neolithic archaeological records indicate that these crops were first domesticated by early civilizations in the region. The domestication and evolution of wild ancestors into today’s elite cultivars are important contributors to global food supply and agricultural crop improvement. In addition, food legumes contribute to food security by protecting human health and minimize climate change impacts. During the domestication process, legume crop species have undergone a severe genetic diversity loss, and only a very narrow range of variability is retained in the cultivars. Further reduction in genetic diversity occurred during seed dispersal and movement across the continents. In general, only a few traits, such as shattering resistance, seed dormancy loss, stem growth behavior, flowering–maturity period, and yield traits, have prominence in the domestication process across the species. Thus, identification and knowledge of domestication responsive loci were often useful in accelerating new species’ domestication. The genes and metabolic pathways responsible for the significant alterations that occurred as an outcome of domestication might aid in the quick domestication of novel crops. Further, recent advances in “omics” sciences, gene-editing technologies, and functional analysis will accelerate the domestication and crop improvement of new crop species without losing much genetic diversity. In this review, we have discussed about the origin, center of diversity, and seed movement of major food legumes, which will be useful in the exploration and utilization of genetic diversity in crop improvement. Further, we have discussed about the major genes/QTLs associated with the domestication syndrome in pulse crops and the future strategies to improve the food legume crops.

Nuclear medicine is a medical specialty, where diagnostic and or therapeutic radioisotopes are used to study the physiology of organs and the metabolism of various types of tumors. Pharmaceuticals labeled with radionuclides (radiopharmaceuticals) are studied at pre-clinical level before being used in humans. Animals (Rodents) are generally used to study the biokinetics of tracer in a group of predefined organs. The extrapolation of the results of these studies from animals to humans provides an estimate of the behavior of the radiopharmaceuticals and the irradiation delivered clinically. Nuclear Medicine is fundamentally based on Radiopharmaceuticals whose biodistribution in disease and healthy organ result in either images that are diagnostically useful or local irradiation of tissue that is therapeutically beneficial for treatment of tumors. In result, in most procedures the biodistribution is primarily dependent on clearance of the radiopharmaceuticals from the blood into organs, tissues or lesions. Radiation is harmful for living beings and hence radiation toxicity is required to assess for new radiopharmaceutical which can be calculated by following the methodology of Internal dose calculation. Basic principle of Internal dosimetry and calculation methodology are explained in this chapter.

A 12-bit partial segmented current steering digital to analog converter (DAC) with low glitch area, power consumption, and integral nonlinearity (INL) error is proposed in this work. The cause of the glitch area and its possible solutions are explored. A current-mode logic (CML) latch with reduced output swing (Vdd to slightly below threshold voltage) is used at the input to the differential switch which reduces the glitch area (also known as glitch energy) significantly to 0.25 pVs. Further, this latch is used in the digital block of the proposed DAC to reduce the area and power requirement of the overall design. A dummy switch is used at the output of the differential switch to diminish effect of charge feedthrough at the output node of a current steering DAC. It also helps in the reduction of minimum allowable voltage headroom as compared to conventional double cascode structure and reduction of total power consumption to 9.1 mW operating at 200 MHz. The design and simulation of current steering DAC are performed in a 0.18 μm standard CMOS technology library using Cadence Virtuoso tool with a supply voltage of 1.8 V.

The combination of better transport properties of III-V group semiconductors along with excellent electrostatic control of surrounding gate is a promising option for the future low power electronics. Accordingly in this brief, the major figures of merit (FOM) including output current, output conductance (gd), transconductance generation factor (TGF), intrinsic gain (dB), and dynamic power dissipation are computed for surrounding-gate field effect transistors (SG-FETs) considering III-V group semiconductors and Si channel material respectively with respect to different device parameters. It is noticed that the center potential is higher in AlGaN/GaN SG-FET than Si for different values of channel length (CL), channel height (H), oxide thickness (tox), and doping concentration (Nd). The AlGaN/GaN SG-FET provides lower gd than Si for different values of CL, H, tox, and Nd as required for MOS analog circuits to achieve higher gain. The peak value of TGF and intrinsic gain is higher in AlGaN/GaN than Si SG-FET for different values of CL, H, tox, and Nd. In this work, we have analyzed the MOSFET structure for normally off operation of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce dynamic power dissipation (PD). The magnitude of PD is calculated to be lower in normally off AlGaN/GaN SG-FET than Si for different values of CL, H, and tox.

Employee turnover intentions have emerged as a significant research topic in social sciences as well as a challenge for corporates in Indian settings in past decade. This article presents a systematic literature review of employee turnover intention in India, providing an in-depth analysis of 198 empirical research articles on employee turnover intentions in Indian cultural settings published between 2010 to October 2022 in 126 academic journals listed in Scopus and Web of Sciences and proposes a heuristic model of turnover intention. The study reveals: 53 distinctive correlates of turnover intention which have been grouped into nine broad categories; research being conducted on a few antecedents of turnover intention in isolated pieces without taking a comprehensive approach; lack of attention to testing recent turnover models in Indian settings; too much preference on turnover intention as a proxy for actual turnover. The proposed model was tested on 481 respondents belonging to various industries across service sector in India employing Smart PLS software for validating path analysis provided encouraging results. Taking a note of trends and rifts, this article presents an inclusive approach along with suggestions and recommendations for future employee turnover intention research in India.

The ever-increasing demand for high-quality digital video requires efficient compression techniques and fast video codecs. It necessitates increased complexity of the video codec algorithms. So, there is a need for hardware accelerators to implement such complex algorithms. The latest video compression algorithms such as High-Efficiency Video Coding (HEVC) and Versatile Video Coding (VVC) have been adopted Context-based Adaptive Binary Arithmetic Coding (CABAC) as the entropy coding method. The CABAC has two main data processing paths: regular and bypass bin path, which can achieve good compression when used with Syntax Elements (SEs) statistics. However, it is highly intrinsic data dependence and has sequential coding characteristics. Thus, it is challenging to parallelize. In this work, a 6-core bypass bin path having high-throughput and low hardware area has been proposed. It is a parallel architecture capable of processing up to 6 bypass bins per clock cycle to improve throughput. Further, the resource-sharing techniques within the binarization and a common controller block have reduced the hardware area. The proposed architecture has been simulated, synthesized, and prototyped on 28 nm Artix 7 Field Programmable Gate Array (FPGA). The implementation of Application Specific Integrated Circuit (ASIC) has been done using 65 nm CMOS technology. The proposed design achieved a throughput of 1.26 Gbin/s at 210 MHz operating frequency with a low hardware area compared to existing architectures. This architecture also supports multi-standard (HEVC/VVC) encoders for Ultra High Definition (UHD) applications.

Summary Cytokinin group of phytohormones regulate root elongation and branching during post‐embryonic development. Cytokinin‐degrading enzymes cytokinin oxidases/dehydrogenases (CKXs) have been deployed to investigate biological activities of cytokinin and to engineer root growth. We expressed chickpea cytokinin oxidase 6 (CaCKX6) under the control of a chickpea root‐specific promoter of CaWRKY31 in Arabidopsis thaliana and chickpea having determinate and indeterminate growth patterns, respectively, to study the effect of cytokinin depletion on root growth and drought tolerance. Root‐specific expression of CaCKX6 led to a significant increase in lateral root number and root biomass in Arabidopsis and chickpea without any penalty to vegetative and reproductive growth of shoot. Transgenic chickpea lines showed increased CKX activity in root. Soil‐grown advanced chickpea transgenic lines exhibited higher root‐to‐shoot biomass ratio and enhanced long‐term drought tolerance. These chickpea lines were not compromised in root nodulation and nitrogen fixation. The seed yield in some lines was up to 25% higher with no penalty in protein content. Transgenic chickpea seeds possessed higher levels of zinc, iron, potassium and copper. Our results demonstrated the potential of cytokinin level manipulation in increasing lateral root number and root biomass for agronomic trait improvement in an edible legume crop with indeterminate growth habit.

In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center potential is calculated for different values of channel length, channel height, doping concentration, and thickness of oxide layer using numerical simulations and analytical modeling. The results obtained using numerical simulations through TCAD are validated and found in decent accord with the analytical modeling. The lower effective mass of the III-V channel material results in the lower density of states (DOS), so quantum capacitance reduces significantly in III-V GAA-FET as compared to Si. This small DOS of III-V directly results in a low sheet carrier concentration at a certain gate overdrive voltage for III-V GAA-FET. The analog and linearity/distortion parameters of III-V and Si GAA-FET are calculated and compared. The utility of the III-V GAA-FET extends in high speed and low power digital logic applications, RF design applications including low noise and very high frequency due to better electron transport properties than Si.

A small-signal radio-frequency (RF) parameters extraction model along with analog/RF and linearity distortion performance analysis are realized for virtually doped (VD) recessed source/drain dopingless junctionless transistor (Re S/D DLJLT) via 3-D device simulations. A simple and accurate RF non-quasi-static (NQS) model is developed to directly extract the extrinsic and intrinsic parasitic components through Y-parameters in OFF and ON-state respectively. Furthermore, direct comparison of DC, analog/RF, linearity figure of merits (FOMs), and Y-parameter extractions are made with recessed source/drain junction transistor (Re S/D JT) with identical threshold voltage (Vth) and device dimensions at GHz frequency range. Virtual doping, due to charge-plasma (CP) concept, provides N+ source/drain (S/D) regions by choosing a most convenient metal work function (WF = 3.9 eV; Hafnium) at S/D. Re S/D provides reduced series resistance without an increase in gate-drain Miller capacitance leading to improved drive current. In addition, the present device uses an intrinsic channel and does not require to be doped at S/D resulting in dopingless junctionless transistor (DLJLT). For both devices, gate length (L) is taken as 30 nm, which separated into control gate (L1) and screen gate (L2) and 3-D simulations are carried out by varying control to screen gate length ratios (CSLR) to obtain optimum results. Obtained results disclose that Re S/D DLJLT provides considerably improved performances in terms of DC, analog/RF, linearity, transient, and small-signal admittance parameters over Re S/D JT due to improved drive current and reduced short channel effects (SCEs). Accordingly, for high-performance RF applications, Re S/D DLJLT may be preferred over Re S/D JT due to significantly enhanced cut-off frequency (up to 0.399 THz) and maximum oscillation frequency (up to 1.226 THz).

A distinctive charge plasma approach is used to propose a novel dual-metal-gate (DMG) recessed-source/drain dopingless junctionless transistor (Re S/D DLJLT) in which the source/drain (S/D) series resistance is reduced without any increment of the gate-to-drain Miller capacitance. In this device, the charge plasma approach is applied to induce an N+ (virtually doped) S/D region by using metals with appropriate work functions for the electrodes. The direct-current (DC) and analog/radio frequency (RF) figures of merit (FOMs) of the proposed device are analyzed using two-dimensional (2-D) numerical calculations and compared with those for a DMG recessed-source/drain junction transistor (Re S/D JT) of identical dimensions. The results reveal that the DMG-Re S/D DLJLT exhibits enhanced DC and analog/RF performance compared with the DMG-Re S/D JT. The total gate length (L) is divided between the control gate (L1) and screen gate (L2), and the numerical investigations are carried out with different ratios of the control gate to screen gate lengths (L1:L2) to determine the optimized gate length for the DMG. A subthreshold slope of 61.32 mV/dec is obtained for the proposed device with L1:L2 = 1:1. An improvement in the ON-state current (ION) is observed due to the introduction of the charge plasma concept, which also reduces the OFF-state leakage current (IOFF) and causes a net enhancement in the ION/IOFF ratio. The device proposed herein also solves the problems of random doping fluctuation, doping activation, and threshold voltage variation and may thus be preferred over DMG-Re S/D JTs for use in analog/RF and digital applications due to its improved performance.

Poisoning is a major global health problem and one of the leading causes of morbidity and mortality in the developing world including Nepal. The scenario of poisoning can vary among demographics and geography within the country. This study aims to find out the scenario of poisoning cases in Devdaha Medical College Teaching Hospital (DMCTH), Rupandehi, Nepal. It is a hospital-based retrospective study that was carried out in the Emergency Department of DMCTH from August 2013 to July 2015. Out of the total 107 cases, more of the poisoning cases were found in the third decade of life (21-30 yrs) followed by the second decade (11-20 yrs). The minimum cases of poisoning were observed among females aged above 60 years and males aged 51-60 yrs. Most of the patients recovered and were discharged within three days of admission. Five fatal cases were found. Pesticides and insecticides were the common poisoning agents used. The incidence of poisoning was prevalent among the young adult (15-29 yrs) patients admitted to DMCTH. A higher incidence of intentional poisoning was found in this study. Implementation of effective prevention strategies can minimize the incidences of poisoning while early detection and effective management of poisoning can minimize mortality.

Linearity and intermodulation distortion (IMD) analysis examined major reliability issues that arise due to the non-linear behavior of the devices in analog/RF circuit applications. In this paper, by means of virtually doped (dopingless), a distinctive influence of charge-plasma (CP) is proposed on novel dual metal gate (DMG; control and screen gate) recessed source/drain (Re S/D) transistor; envisaged as recessed source/drain dopingless junctionless transistor (Re S/D DLJLT). Re S/D structure diminishes series resistance without any accretion of the gate-drain Miller capacitance resulting in a better drive current (ION). DC and analog characteristics have been further improved by adopting CP conception for induction of N+ S/D region owing to favorably well-chosen metal work function electrodes. The main intent of this paper is to appraise the linearity and IMD performance characteristics of the Re S/D DLJLT using 2-D numerical calculations and scrutinize the distinction with recessed source/drain junction transistor (Re S/D JT) with identical dimensions. Device linearity parameters comprise of transconductance (Gm1) and its higher order coefficients (Gm2 and Gm3), second and third order voltage and input intercept point (VIP2, VIP3, and IIP3) third order IMD, and 1 − dB compression point (1 − dBCP) which are based on possible structural and control to screen gate length ratios (CSLR) variations in both devices. The influences of parametric modifications on linearity Figure of merits (FOMs) explore optimum bias point by investigating optimum structural with CSLR variations. The detailed investigation of linearity FOMs of the impact on different device engineering has been carried out. The obtained outcomes divulge that proposed device delivers appreciably enhanced linearity FOMs as compared to Re S/D JT.

In this study, the authors propose a novel MgZnO/CdZnO Quadruple-Gate Field Effect Transistor (QG-FET). The analog/RF and linearity distortion performance of the proposed QG-FET has been analysed and compared with conventional AlGaN/GaN QG-FET having identical physical dimensions. The performance parameters including drain current (IDS), gate capacitance (Cgs), output-conductance (gd), transconductance (gm1), transconductance generation factor (TGF), intrinsic-gain (dB), cut-off frequency (fT), transconductance frequency product (TFP), first and second order derivatives of gm1 (i.e., gm2 and gm3), third order intermodulation distortion (IMD3), third order input intercept point (IIP3), and extrapolated input voltages (VIP2 and VIP3) have been calculated. The consequences of variations in physical parameters of proposed QG-FET viz., thickness of oxide layer (tox), channel length (CL), and doping concentration (Nd) on the analog/RF and linearity distortion parameters are analyzed and compared with conventional AlGaN/GaN QG-FET. It has been revealed that MgZnO/CdZnO QG-FET yields higher IDS, gm1, TGF, intrinsic gain (dB), fT, and TFP than conventional AlGaN/GaN QG-FET with respect to different values of tox, CL, and Nd.

In this work, analog and linearity distortion performance of a III–V AlGaN/GaN quadruple gate field effect transistor (III–V QG-FET) has been analyzed and compared with conventional Si QG-FET having identical physical dimensions. Specifically, we investigate the linearity by numerically computing transconductance (gm1), its second and third order derivatives (gm2 and gm3), along-with linearity metrics comprising of third order intermodulation distortion (IMD3), third order input intercept point (IIP3), and extrapolated input voltages (VIP2 and VIP3). The consequences of variations in physical parameters of III–V QG-FET, i.e., channel length, channel height, the thickness of oxide layer, doping concentration, along-with temperature on the linearity metrics parameters, drain current, and threshold voltage are analyzed and compared with Si QG-FET. The gate capacitance and dynamic power dissipation is calculated numerically and compared by performing small signal AC analysis at 1 MHz frequency for III–V and Si QG-FETs. The influence of variations in above mentioned physical parameters is also analyzed on dynamic power dissipation and gate capacitance considering the effects of quantum capacitance in the nanometer regime. The present analysis reveals that in III–V QG-FET, the dynamic power dissipation is considerably reduced than its contender Si QG-FET due to its reduced threshold voltage, and thus it is a more promising candidate for analog and low power dissipation applications.

Materials with optical multifunctionality such as photoluminescence (PL), radioluminescence, and thermoluminescence (TL) are a boon for a sustainable society. BaHfO

From few decades, the growth in electricity demand and increase in nonlinear loads increase the requirement of high Voltage stability for electrical power system. The voltage of the power system can be monitored and controlled continuously using voltage stability indices. In this paper firstly contingencies are ranked based on their voltage stability margin, then line stability index (Lmn), fast voltage stability index (FVSI) as well as line stability factor (Lqp) methods are employed to find the most critical line of the IEEE 14-bus system. These three voltage stability indices have been analyzed under top five different contingencies to detect the most critical bus of the system. Static Synchronous Series compensator (SSSC) has placed in top five critical lines and voltage stability indices are observed for optimal location of SSSC.

Elephant endotheliotropic herpesvirus hemorrhagic disease (EEHV HD) is an acute viral infection of growing Asian elephants (

Background: The present study was conducted to assess predictive factors for difficult laparoscopic cholecystectomy. Materials & Methods: 84 patients having symptomatic gallstone disease were included. After the surgery, patients were group into 2 groups those who had a successful laparoscopic cholecystectomy and those cases who had conversion to open cholecystectomy. Results: Total 6 cases underwent conversion. Out of 15 patients with age >50 years, 3 underwent conversion and out of 69 patients with age 50 years were predictive factors for conversion.

Tremendous explosion of population has led to about 200% increment of total energy consumptions in last twenty-five years. Apart from conventional fossil fuel as limited energy source, alternative non-conventional sources are being explored worldwide to cater the energy requirement. Lignocellulosic biomass conversion for biofuel production is an important alternative energy source due to its abundance in nature and creating less harmful impacts on the environment in comparison to the coal or petroleum-based sources. However, lignocellulose biopolymer, the building block of plants, is a recalcitrant substance and difficult to break into desirable products. Commonly used chemical and physical methods for pretreating the substrate are having several limitations. Whereas, utilizing microbial potential to hydrolyse the biomass is an interesting area of research. Because of the complexity of substrate, several enzymes are required that can act synergistically to hydrolyse the biopolymer producing components like bioethanol or other energy substances. Exploring a range of microorganisms, like bacteria, fungi, yeast etc. that utilizes lignocelluloses for their energy through enzymatic breaking down the biomass, is one of the options. Scientists are working upon designing organisms through genetic engineering tools to integrate desired enzymes into a single organism (like bacterial cell). Studies on designer cellulosomes and bacteria consortia development relating consolidated bioprocessing are exciting to overcome the issue of appropriate lignocellulose digestions. This review encompasses up to date information on recent developments for effective microbial degradation processes of lignocelluloses for improved utilization to produce biofuel (bioethanol in particular) from the most plentiful substances of our planet.

In this article, a distinctive charge plasma (CP) technique is employed to design two doping-less dual gate tunnel field effect transistors (DL-DG-TFETs) with Si0.5Ge0.5 and Si as source material. The CP methodology resolves the issues of random doping fluctuation and doping activation. The analog and RF performance has been investigated for both the proposed devices i.e. Si0.5Ge0.5 source DL-DG-TFET and Si-source DL-DG-TFET in terms of drive current, transconductance, cut-off frequency. In addition, the linearity and distortion analysis has been carried out for both the proposed devices with respect to higher order transconductance (gm2 and gm3), VIP2, IMD3, and HD2. The Si0.5Ge0.5 source DL-DG-TFET has better performance characteristics and reliability in compare to Si-source DL-DG-TFET owing to low energy bandgap material and higher mobility. The switching ratio obtained for Si0.5Ge0.5 source DL-DG-TFET is order of 5×1014 that makes it a suitable contender for low power applications.

Cardiac arrhythmia is a condition of irregular heartbeat, which causes sudden loss of life, which insists the necessity for the continuous monitoring of the arrhythmia patients so that an appropriate medical procedure is provided, for which the smart healthcare plays a major role. Cardiac arrhythmia is one among a type of cardiovascular diseases (CVDs), which reports 12% of total deaths all-over the world. Even though there is a lot of growth in IoT-health monitoring, the manual method suffers from a lot of drawbacks. Hence, there is a need for an automatic method in health-care specifically, for classification of arrhythmia. In this research, we analyze various automatic methods used for classifying arrhythmia in IoT network. This research presents the detailed review of 25 research papers suggesting the methodologies based on various Machine Learning Methods, Deep learning method, nature-inspired methodologies, and so on, for the automatic prediction of Arrhythmia. The collected papers are classified based on different prediction and clustering classification techniques. The research gaps and the challenges faced by the existing techniques are listed and elaborated, which helps the researchers to upgrade the future works. The works utilize various datasets, software tools, performance evaluation measures, prediction techniques, which are analyzed and the performance attained by different techniques are discussed and the research gaps for further contributions are identified in such a way that it enables the researcher to contribute much for the benefit of the society.

A low power 12-bit current steering DAC is designed using SCL 180-nm-technology. Various methodologies are considered to reduce the power consumption in current steering DAC. The current mode logic (CML)-based latch is incorporated to design latch cum-level shifters to reduce digital power consumption. A dummy switch compensation technique is also used at the output of switch to counter the effect of charge feedthrough from switch to the output of DAC. In addition, it also reduces the minimum allowable voltage headroom, thus reducing power consumption of analog block. The power consumption obtained is 12 mW for 12-bit design operating at 200 MHz frequency.

Video compression is a computationally intensive task that generally demands high performance for portable device application. This high performance is mainly attained by motion estimation (ME) in the video encoder. With the larger block size and flexible block, partitioning in High Efficiency Video Encoding (HEVC) makes ME block more complicated. The sum of absolute difference (SAD) is extensively used as a distortion metric in the ME process. It is highest computing task with more calculation time and hardware resource. In this paper, an efficient mixed parallel-pipeline SAD architecture is proposed for high frequency. The performance optimization techniques are used at different levels of abstraction: Architecture level (parallel and pipeline), RTL level (grouping and resource sharing) and Implementation level (retiming). The proposed architecture has been simulated, synthesized and prototyped using 28 nm Artix-7 Field Programmable Gate Array (FPGA). The result shows that the proposed design provides a significant increment in the maximum frequency of 498.4 MHz when compared with other existed work in the literature.

Adiabatic logic has been found to be effective in achieving low power in VLSI circuits. In subthreshold region, the circuit conducts a small current and consumes lesser power. In this paper, the dual rail power supply with 0 and 180° phase difference has been used for subthreshold adiabatic logic (SAL). A priority encoder is designed using SAL with dual rail power supply. All the circuit simulations are done using HSPICE simulator at 22 nm PTM technology. In-phase dual supply offers low power consumption, whereas out-phase dual power supply offers an improved noise margin.