51. New investigation of electronic properties of BGaAs/GaAs single quantum well for photonic applications
- Author
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Faouzi Saidi, Tarek Hidouri, and Samia Nasr
- Subjects
Diffraction ,Photoluminescence ,Materials science ,business.industry ,Band gap ,Surface photovoltage ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Molecular electronic transition ,Electronic, Optical and Magnetic Materials ,010309 optics ,Condensed Matter::Materials Science ,0103 physical sciences ,Optoelectronics ,Electrical and Electronic Engineering ,Photonics ,0210 nano-technology ,business ,Spectroscopy ,Quantum well - Abstract
Electronic transition in BGaAs/GaAs single quantum well (SQW) have been performed combining the dimensional Schrodinger equation, band anticroissing BAC and 10-band k.p models. The modelling results have been validated experimentally by photoluminescence (PL), high resolution-X-ray diffraction (HRXRD) and photoreflectance (PR). The calculated results appeared to be consistent with experiments. Surface photovoltage SPV spectroscopy gives a new way to study the bandgap of the boron based-SQW for the first time. New e1-lh1 transition appeared which is specific to the SQW. The suggested structure looks to be a promising candidate for solar cells and photonic applications as well as a reference for the growth optimization and understanding of the electronic properties of related B(In)GaAs/GaAs quaternary alloys.
- Published
- 2020
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