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51. The 2016 oxide electronic materials and oxide interfaces roadmap

Author

Lorenz, M, primary, Ramachandra Rao, M S, additional, Venkatesan, T, additional, Fortunato, E, additional, Barquinha, P, additional, Branquinho, R, additional, Salgueiro, D, additional, Martins, R, additional, Carlos, E, additional, Liu, A, additional, Shan, F K, additional, Grundmann, M, additional, Boschker, H, additional, Mukherjee, J, additional, Priyadarshini, M, additional, DasGupta, N, additional, Rogers, D J, additional, Teherani, F H, additional, Sandana, E V, additional, Bove, P, additional, Rietwyk, K, additional, Zaban, A, additional, Veziridis, A, additional, Weidenkaff, A, additional, Muralidhar, M, additional, Murakami, M, additional, Abel, S, additional, Fompeyrine, J, additional, Zuniga-Perez, J, additional, Ramesh, R, additional, Spaldin, N A, additional, Ostanin, S, additional, Borisov, V, additional, Mertig, I, additional, Lazenka, V, additional, Srinivasan, G, additional, Prellier, W, additional, Uchida, M, additional, Kawasaki, M, additional, Pentcheva, R, additional, Gegenwart, P, additional, Miletto Granozio, F, additional, Fontcuberta, J, additional, and Pryds, N, additional

Published
2016
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55. Book reviews

Author

Klein, Richard M., Buday, Paul V., Conklin, Harold C., Rogers, D. J., and Snyder, L. A.

Published
1960
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56. Interpretation of the two-components observed in high resolution X-ray diffraction omega-scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate

Author

Durand, Olivier, Létoublon, Antoine, Rogers, D. J., Hosseini Teherani, F., Cornet, Charles, Le Corre, Alain, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Nanovation SARL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and Boyer, Soline

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2011

59. Morphological and optical studies of self-forming ZnO nanocolumn and nanocone arrays grown by PLD on various substrates

Author

Peres, M., Soares, M. J., Neves, A. J., Monteiro, T., Sandana, V. E., Teherani, F., and Rogers, D. J.

Subjects
Nanocrystalline materials, Absorption spectra, II–VI Semiconductors, Photoluminescence
Abstract

Submitted by Teresa Maria Fernandes Rodrigues Cabral Monteiro (tita@ua.pt) on 2012-01-13T23:52:24Z No. of bitstreams: 1 pssb.pdf: 452260 bytes, checksum: 55a544244e30108b3052eb30d90b0ca1 (MD5) Made available in DSpace on 2012-02-09T15:18:43Z (GMT). No. of bitstreams: 1 pssb.pdf: 452260 bytes, checksum: 55a544244e30108b3052eb30d90b0ca1 (MD5) Previous issue date: 2010-05-03 FCT-PTDC/FIS/66262/2006 FCT-SFRH/BD/45774/2008

Published
2010

60. Demonstration of highly oriented InGaN MOVPE growth on ZnO-buffered silicon template substrate

Author

Orsal, G., Moudakir, T., Gautier, S., Maloufi, N., Rogers, D. J., Hosseini Teherani, F., Voss, P., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), Université de Lorraine (UL)-CentraleSupélec, Nanovation SARL, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Schreiber, Cécile, and CentraleSupélec-Université de Lorraine (UL)

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Published
2009

61. MOVPE growth of InGaN on ZnO-buffered Si(111) substrates for solar cells applications

Author

Moudakir, T., Gautier, S., Orsal, G., Maloufi, N., Rogers, D. J., Hosseini Teherani, F., Jomard, F., Abid, M., Nicolas Fressengeas, Ougazzaden, A., Fressengeas, Nicolas, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire d'étude des textures et application aux matériaux (LETAM), Université Paul Verlaine - Metz (UPVM)-Centre National de la Recherche Scientifique (CNRS), Nanovation SARL (Nanovation), Nanovation SARL, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2009

63. Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

Author

Rogers, D. J., additional, Sundaram, S., additional, El Gmili, Y., additional, Teherani, F. Hosseini, additional, Bove, P., additional, Sandana, V., additional, Voss, P. L., additional, Ougazzaden, A., additional, Rajan, A., additional, Prior, K. A., additional, McClintock, R., additional, and Razeghi, M., additional

Published
2015
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64. Risk assessment of vector-borne diseases for public health governance

Author

Sedda, L., Morley, D. W., Braks, M. A. H., De Simone, L., Benz, D., Rogers, D. J., Sedda, L., Morley, D. W., Braks, M. A. H., De Simone, L., Benz, D., and Rogers, D. J.

Abstract

Objectives: In the context of public health, risk governance (or risk analysis) is a framework for the assessment and subsequent management and/or control of the danger posed by an identified disease threat. Generic frameworks in which to carry out risk assessment have been developed by various agencies. These include monitoring, data collection, statistical analysis and dissemination. Due to the inherent complexity of disease systems, however, the generic approach must be modified for individual, disease-specific risk assessment frameworks. Study design: The analysis was based on the review of the current risk assessments of vector-borne diseases adopted by the main Public Health organisations (OIE, WHO, ECDC, FAO, CDC etc.). Methods: Literature, legislation and statistical assessment of the risk analysis frameworks. Results: This review outlines the need for the development of a general public health risk assessment method for vector-borne diseases, in order to guarantee that sufficient information is gathered to apply robust models of risk assessment. Stochastic (especially spatial) methods, often in Bayesian frameworks are now gaining prominence in standard risk assessment procedures because of their ability to assess accurately model uncertainties. Conclusions: Risk assessment needs to be addressed quantitatively wherever possible, and submitted with its quality assessment in order to enable successful public health measures to be adopted. In terms of current practice, often a series of different models and analyses are applied to the same problem, with results and outcomes that are difficult to compare because of the unknown model and data uncertainties. Therefore, the risk assessment areas in need of further research are identified in this article. (C) 2014 The Royal Society for Public Health. Published by Elsevier Ltd. All rights reserved.

Published
2014

67. Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

Author

Rajan, A., additional, Sundaram, S., additional, El Gmili, Y., additional, Voss, P. L., additional, Pantzas, K., additional, Moudakir, T., additional, Ougazzaden, A., additional, Rogers, D. J., additional, Hosseini Teherani, F., additional, Sandana, V. E., additional, Bove, P., additional, Prior, K., additional, McClintock, R., additional, and Razeghi, M., additional

Published
2014
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69. Updating Historical Maps of Malaria Transmission Intensity in East Africa Using Remote Sensing

Author

Omumbo, J. A., Hay, S. I., Scott Goetz, Snow, R. W., and Rogers, D. J.

Subjects
parasitic diseases
Abstract

Remotely sensed imagery has been used to update and improve the spatial resolution of malaria transmission intensity maps in Tanzania, Uganda, and Kenya. Discriminant analysis achieved statistically robust agreements between historical maps of the intensity of malaria transmission and predictions based on multitemporal meteorological satellite sensor data processed using temporal Fourier analysis. The study identified land surface temperature as the best predictor of transmission intensity. Rainfall and moisture availability as inferred by cold cloud duration (ccd) and the normalized difference vegetation index (ndvi), respectively, were identified as secondary predictors of transmission intensity. Information on altitude derived from a digital elevation model significantly improved the predictions. "Malaria-free" areas were predicted with an accuracy of 96 percent while areas where transmission occurs only near water, moderate malaria areas, and intense malaria transmission areas were predicted with accuracies of 90 percent, 72 percent, and 87 percent, respectively. The importance of such maps for rationalizing malaria control is discussed, as is the potential contribution of the next generation of satellite sensors to these mapping efforts.

Published
2002

70. Pest-damage relationships for Helicoverpa armigera (Hübner) (Lepidoptera: Noctuidae) on vegetative soybean

Author

Rogers, D. J., Brier, Hugh, Rogers, D. J., and Brier, Hugh

Abstract

The response of vegetative soybean (Glycine max) to Helicoverpa armigera feeding was studied in irrigated field cages over three years in eastern Australia to determine the relationship between larval density and yield loss, and to develop economic injury levels. Rather than using artificial defoliation techniques, plants were infested with either eggs or larvae of H. armigera, and larvae allowed to feed until death or pupation. Larvae were counted and sized regularly and infestation intensity was calculated in Helicoverpa injury equivalent (HIE) units, where 1 HIE was the consumption of one larva from the start of the infestation period to pupation. In the two experiments where yield loss occurred, the upper threshold for zero yield loss was 7.51±0.21HIEs and 6.43±1.08HIEs respectively. In the third experiment, infestation intensity was lower and no loss of seed yield was detected up to 7.0HIEs. The rate of yield loss/HIE beyond the zero yield loss threshold varied between Experiments 1 and 2 (−9.44±0.80g and −23.17±3.18g, respectively). H. armigera infestation also affected plant height and various yield components (including pod and seed numbers and seeds/pod) but did not affect seed size in any experiment. Leaf area loss of plants averaged 841 and 1025cm2/larva in the two experiments compared to 214 and 302cm2/larva for cohort larvae feeding on detached leaves at the same time, making clear that artificial defoliation techniques are unsuitable for determining H. armigera economic injury levels on vegetative soybean. Analysis of canopy leaf area and pod profiles indicated that leaf and pod loss occurred from the top of the plant downwards. However, there was an increase in pod numbers closer to the ground at higher pest densities as the plant attempted to compensate for damage. Defoliation at the damage threshold was 18.6 and 28.0% in Experiments 1 and 2, indicating that yield loss from H. armigera feeding occurred at much lower levels of defoliation than previou

Published
2010

71. Pest-damage relationships for Helicoverpa armigera (Hübner) (Lepidoptera: Noctuidae) on soybean (Glycine max) and dry bean (Phaseolus vulgaris) during pod-fill

Author

Rogers, D. J., Brier, Hugh, Rogers, D. J., and Brier, Hugh

Abstract

The response of soybean (Glycine max) and dry bean (Phaseolus vulgaris) to feeding by Helicoverpa armigera during the pod-fill stage was studied in irrigated field cages over three seasons to determine the relationship between larval density and yield loss, and to develop economic injury levels. H. armigera intensity was calculated in Helicoverpa injury equivalent (HIE) units, where 1HIE was the consumption of one larva from the start of the infestation period to pupation. In the dry bean experiment, yield loss occurred at a rate 6.00±1.29g/HIE while the rates of loss in the three soybean experiments were 4.39±0.96g/HIE, 3.70±1.21g/HIE and 2.12±0.71g/HIE. These three slopes were not statistically different (P>0.05) and the pooled estimate of the rate of yield loss was 3.21±0.55g/HIE. The first soybean experiment also showed a split-line form of damage curve with a rate of yield loss of 26.27±2.92g/HIE beyond 8.0 HIE and a rapid decline to zero yield. In dry bean, H. armigera feeding reduced total and undamaged pod numbers by 4.10±1.18pods/HIE and 12.88±1.57pods/HIE respectively, while undamaged seed numbers were reduced by 35.64±7.25seeds/HIE. In soybean, total pod numbers were not affected by H. armigera infestation (out to 8.23HIE in Experiment 1) but seed numbers (in Experiments 1 and 2) and the number of seeds/pod (in all experiments) were adversely affected. Seed size increased with increases in H. armigera density in two of the three soybean experiments, indicating plant compensatory responses to H. armigera feeding. Analysis of canopy pod profiles indicated that loss of pods occurred from the top of the plant downwards, but with an increase in pod numbers close to the ground at higher pest densities as the plant attempted to compensate for damage. Based on these results, the economic injury levels for H. armigera on dry bean and soybean are approximately 0.74HIE and 2.31HIE/m2, respectively (0.67 and 2.1HIE/row-m for 91cm rows).

Published
2010

73. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

Author

Ougazzaden, A., Rogers, D. J., Teherani, F. Hosseini, Moudakir, T., Gautier, S., Aggerstam, Thomas, Saad, S. Ould, Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J. N., Ougazzaden, A., Rogers, D. J., Teherani, F. Hosseini, Moudakir, T., Gautier, S., Aggerstam, Thomas, Saad, S. Ould, Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., and Chapman, J. N.

Abstract

The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (similar to 1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality., QC 20100623

Published
2008
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77. Role of olfaction in host plant selection and local adaptation of a polyphagous herbivore, Eucolaspis Sharp.

Author

Doddala, P. R. C., Minor, M. A., Wang, Q., Rogers, D. J., Koot, E. M., and Trewick, S. A.

Subjects
INSECT-host relationships, BEETLES, HOST plants, CHRYSOMELIDAE, HERBIVORES, SMELL
Abstract

Host plant cues are known to shape insect-host plant association in many insect groups. More pronounced associations are generally manifested in specialist herbivores, but little is known in generalist herbivores. We used a polyphagous native beetle from New Zealand, bronze beetle, Eucolaspis sp. 'Hawkes Bay' (Chrysomelidae: Eumolpinae) to explore the role of olfaction in locating host plants and local adaptation. We also tested the role of other cues in the degree of acceptance or rejection of hosts. Adult Eucolaspis beetles were attracted to fresh leaf volatiles from apple and blackberry (Rosaceae). Male and female beetles responded similarly to olfactory cues of host plants. An indication of evolutionary affiliation was observed in olfactory preferences of geographically isolated conspecific populations. We found that geographically isolated populations of the beetles differ in their olfactory responses and exhibit some degree of local adaptation. However, irrespective of geographical and ecological associations, blackberry was preferred over apple as a feeding plant, and another novel plant, bush lawyer ( Rubus australis), was readily accepted by 53.25% of the tested beetles. We show that plant volatiles play an important role in host location by Eucolaspis, but the acceptance or rejection of a particular host could also involve visual and contact cues. [ABSTRACT FROM AUTHOR]

Published
2016
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79. Engineering future light emitting diodes and photovoltaics with inexpensive materials:Integrating ZnO and Si into GaN-based devices

Author

Bayram, C., primary, Shiu, K. T., additional, Zhu, Y., additional, Cheng, C. W., additional, Sadana, D. K., additional, Teherani, F. H., additional, Rogers, D. J., additional, Sandana, V. E., additional, Bove, P., additional, Zhang, Y., additional, Gautier, S., additional, Cho, C.-Y., additional, Cicek, E., additional, Vashaei, Z., additional, McClintock, R., additional, and Razeghi, M., additional

Published
2013
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83. Fast-Tracking Maturity Group 4 and 5 Cultivars with Southern Root-Knot Nematode Resistance.

Author

Harrison, D., Acuna-Galindo, A., Florez-Palacios, L., Wu, C., Rogers, D. J., Ablao, A., Winter, J., Ravelombola, F., and Mozzoni, L.

Subjects
ROOT-knot nematodes, SOUTHERN root-knot nematode, CULTIVARS, SOYBEAN, PLANT drying
Abstract

The University of Arkansas System Division of Agriculture's Soybean Breeding Program is currently developing locally adapted maturity group (MG) 4 and 5 soybean [Glycine max (L.) Merritt] cultivars with resistance to southern root-knot nematode (Meloidogyne incognita, SRKN). Southern root-knot nematode is economically significant in Arkansas, causing an estimated 8.6 million bushel yield reduction on average annually. There is currently a gap in resistance packages offered in high-yielding commercial lines available in Arkansas and the mid-South states. In 2021, a total of 15 MG 4 and 13 MG 5 advanced stage pre-commercial (PCM) lines were evaluated in a 3 replication trial for resistance response to SRKN in a field setting in Kerr, Ark. Recorded responses to characterize resistance or susceptibility included: average galling, average height, SRKN juveniles (J2/100 cm³), dry root weight (g), dry plant top weight (g), SRKN eggs/root (g) and reproductive factor. Additionally, 12 MG 4 and 10 MG 5 entries from the Arkansas Official Variety Trial were screened in a field in Kerr, Ark., and the University of Arkansas System Division of Agriculture's Nematode Diagnostic Lab (ANDL) in Hope, Ark., for galling versus reproduction responses. Data were subsequently analyzed to identify lines with possible resistance. Four lines (R14-1422, R18-14142, R13-13997, and R13-11034) were found to have possible resistance mechanisms. R14-1422, the only line to be categorized as very resistant in field settings, is to be used in the University of Arkansas System Division of Agriculture's Soybean Breeding Program's crossing block to develop multiple breeding populations with the potential for SRKN resistance. All entries that were screened in field and greenhouse settings, as well as 2 F2 breeding populations, were tissue sampled to be tested for the presence of a molecular marker associated with tolerance to SRKN in late maturity groups in 2022. [ABSTRACT FROM AUTHOR]

Published
2022

84. Soybean Variety Advancement Using a Winter Nursery.

Author

Florez-Palacios, L., Acuna-Galindo, A., Wu, C., Harrison, D., Rogers, D. J., Ablao, A., Winter, J., Ravelombola, F., and Mozzoni, L.

Subjects
SOYBEAN, PLANT nurseries, WINTER, SEXUAL cycle, MATERIALS testing, GREENHOUSE plants
Abstract

The University of Arkansas System Division of Agriculture's Soybean Breeding Program strives to develop and release high-yielding maturity group (MG) 4 soybean [Glycine max (L.) Merr.] varieties with desirable traits that are well adapted to Arkansas' growing conditions. Generation advancements are restricted to only 1 cycle per year in the United States (U.S.). Increasing to 2 cycles per year is essential to stay competitive in making genetic gains. The Soybean Breeding Program has contracted with a South American off-season nursery in Chile, offering generation advancement services during U.S. winter months to maintain the 2 cycles per year competitive advantage. In October 2020, 3141 single plants from 13 MG 3 and 4 breeding populations were selected and individually harvested in Fayetteville, Ark. Seed was processed and sent to Quillota, Chile, to grow as progeny rows. In April 2021, 590 of the best-performing lines (13% MG 3 and 87% MG 4) were selected based on a vegetative index using drone imaging data, bulk-harvested, and sent back to Ark. for preliminary yield testing in four locations with one replication. Incorporating a winter nursery into our workflow has reduced the breeding cycle by 1 year while increasing the proportion of MG 4 commodity material in testing to 59% and MG 3 to 21%. [ABSTRACT FROM AUTHOR]

Published
2022

86. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

Author

Rogers, D. J., primary, Ougazzaden, A., additional, Sandana, V. E., additional, Moudakir, T., additional, Ahaitouf, A., additional, Teherani, F. Hosseini, additional, Gautier, S., additional, Goubert, L., additional, Davidson, I. A., additional, Prior, K. A., additional, McClintock, R. P., additional, Bove, P., additional, Drouhin, H.-J., additional, and Razeghi, M., additional

Published
2012
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87. Energy harvesting from millimetric ZnO single wire piezo-generators

Author

Rogers, D. J., primary, Carroll, C., additional, Bove, P., additional, Sandana, V. E., additional, Goubert, L., additional, Largeteau, A., additional, Teherani, F. Hosseini, additional, Demazeau, G., additional, McClintock, R., additional, Drouhin, H. -J., additional, and Razeghi, M., additional

Published
2012
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93. Use of PLD-grown Moth-eye ZnO Nanostructures as Templates for MOVPE Growth of InGaN-Based Photovoltaics

Author

Rogers, D. J., primary, Sandana, V. E., additional, Teherani, F. Hosseini, additional, Gautier, S., additional, Orsal, G., additional, Moudakir, T., additional, Molinari, M., additional, Troyon, M., additional, Peres, M., additional, Soares, M. J., additional, Neves, A. J., additional, Monteiro, T., additional, McGrouther, D., additional, Chapman, J. N., additional, Drouhin, H-J., additional, Razeghi, M., additional, and Ougazzaden, A., additional

Published
2011
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99. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Author

Ougazzaden, A., primary, Rogers, D. J., additional, Teherani, F. Hosseini, additional, Orsal, G., additional, Moudakir, T., additional, Gautier, S., additional, Sandana, V. E., additional, Jomard, F., additional, Abid, M., additional, Molinari, M., additional, Troyon, M., additional, Voss, P. L., additional, McGrouther, D., additional, and Chapman, J. N., additional

Published
2010
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