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56. Clinical evaluation of the acuitas® AMR gene panel for rapid detection of bacteria and genotypic antibiotic resistance determinants

Author

Riedel, Stefan, primary, Halls, Justin, additional, Dutta, Sanjucta, additional, Toraskar, Nikhil, additional, Lemon, Jamie, additional, Carter, Kendra, additional, Sinclair, Will, additional, Lopansri, Bert K., additional, Styer, Amanda M., additional, Wolk, Donna M., additional, and Walker, G. Terrance, additional

Published
2021
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59. Recognition of Diagnostic Gaps for Laboratory Diagnosis of Fungal Diseases: Expert Opinion from the Fungal Diagnostics Laboratories Consortium (FDLC)

Author

Zhang, Sean X., primary, Babady, N. Esther, additional, Hanson, Kimberly E., additional, Harrington, Amanda T., additional, Larkin, Paige M. K., additional, Leal, Sixto M., additional, Luethy, Paul M., additional, Martin, Isabella W., additional, Pancholi, Preeti, additional, Procop, Gary W., additional, Riedel, Stefan, additional, Seyedmousavi, Seyedmojtaba, additional, Sullivan, Kaede V., additional, Walsh, Thomas J., additional, and Lockhart, Shawn R., additional

Published
2021
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61. Doping Effects in CMOS‐compatible CoSi Thin Films for Thermoelectric and Sensor Applications

Author

Nichenametla, Charan Krishna, Calvo, Jesús, Riedel, Stefan, Gerlich, Lukas, Hindenberg, Meike, Novikov, Sergej, Alexander Burkov, Kozelj, Primoz, Cardoso-Gil, Raul, Wagner-Reetz, Maik, and Publica

Abstract

We report on semi‐metallic cobalt monosilicide (CoSi) as a CMOS‐compatible thermoelectric (TE) material and discuss the effect of n‐ and p‐type dopants on its transport properties. Thin films of CoSi are developed using chemical vapor deposition tools and subsequent rapid thermal processing. Film properties such as microstructure, crystallinity and elemental distribution are studied via electron microscopy, X‐ray diffraction and time‐of‐flight secondary ion mass spectroscopy. Doping silicon with boron prior to silicidation impedes the Co‐Si diffusion process, while phosphorus atoms distribute uniformly in silicides with no voids or agglomerations. CoSi makes a suitable n‐type TE candidate and provides an alternative to Si or SiGe materials. Transport properties of undoped CoSi exhibit a linear dependence within the investigated temperature window, whereas dopants in CoSi increase the number of electron carriers that contribute to charge transport and thereby influence the Seebeck coefficient. Thus, TE characteristics of thin CoSi films can be tuned via (i) the type of dopants used and/or (ii) varying the residual silicon thickness post silicidation.

Published
2020

64. A single-cell and spatial atlas of autopsy tissues reveals pathology and cellular targets of SARS-CoV-2

Author

Delorey, Toni M., primary, Ziegler, Carly G. K., additional, Heimberg, Graham, additional, Normand, Rachelly, additional, Yang, Yiming, additional, Segerstolpe, Asa, additional, Abbondanza, Domenic, additional, Fleming, Stephen J., additional, Subramanian, Ayshwarya, additional, Montoro, Daniel T., additional, Jagadeesh, Karthik A., additional, Dey, Kushal K., additional, Sen, Pritha, additional, Slyper, Michal, additional, Pita-Juárez, Yered H., additional, Phillips, Devan, additional, Bloom-Ackerman, Zohar, additional, Barkas, Nick, additional, Ganna, Andrea, additional, Gomez, James, additional, Normandin, Erica, additional, Naderi, Pourya, additional, Popov, Yury V., additional, Raju, Siddharth S., additional, Niezen, Sebastian, additional, Tsai, Linus T.-Y., additional, Siddle, Katherine J., additional, Sud, Malika, additional, Tran, Victoria M., additional, Vellarikkal, Shamsudheen K., additional, Amir-Zilberstein, Liat, additional, Atri, Deepak S., additional, Beechem, Joseph, additional, Brook, Olga R., additional, Chen, Jonathan, additional, Divakar, Prajan, additional, Dorceus, Phylicia, additional, Engreitz, Jesse M., additional, Essene, Adam, additional, Fitzgerald, Donna M., additional, Fropf, Robin, additional, Gazal, Steven, additional, Gould, Joshua, additional, Grzyb, John, additional, Harvey, Tyler, additional, Hecht, Jonathan, additional, Hether, Tyler, additional, Jane-Valbuena, Judit, additional, Leney-Greene, Michael, additional, Ma, Hui, additional, McCabe, Cristin, additional, McLoughlin, Daniel E., additional, Miller, Eric M., additional, Muus, Christoph, additional, Niemi, Mari, additional, Padera, Robert, additional, Pan, Liuliu, additional, Pant, Deepti, additional, Pe’er, Carmel, additional, Pfiffner-Borges, Jenna, additional, Pinto, Christopher J., additional, Plaisted, Jacob, additional, Reeves, Jason, additional, Ross, Marty, additional, Rudy, Melissa, additional, Rueckert, Erroll H., additional, Siciliano, Michelle, additional, Sturm, Alexander, additional, Todres, Ellen, additional, Waghray, Avinash, additional, Warren, Sarah, additional, Zhang, Shuting, additional, Zollinger, Daniel R., additional, Cosimi, Lisa, additional, Gupta, Rajat M., additional, Hacohen, Nir, additional, Hide, Winston, additional, Price, Alkes L., additional, Rajagopal, Jayaraj, additional, Tata, Purushothama Rao, additional, Riedel, Stefan, additional, Szabo, Gyongyi, additional, Tickle, Timothy L., additional, Hung, Deborah, additional, Sabeti, Pardis C., additional, Novak, Richard, additional, Rogers, Robert, additional, Ingber, Donald E., additional, Gordon Jiang, Z., additional, Juric, Dejan, additional, Babadi, Mehrtash, additional, Farhi, Samouil L., additional, Stone, James R., additional, Vlachos, Ioannis S., additional, Solomon, Isaac H., additional, Ashenberg, Orr, additional, Porter, Caroline B.M., additional, Li, Bo, additional, Shalek, Alex K., additional, Villani, Alexandra-Chloé, additional, Rozenblatt-Rosen, Orit, additional, and Regev, Aviv, additional

Published
2021
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80. Monitoring Conformality in ALD Manufacturing:Comparing Lateral and Vertical High Aspect Ratio Test Structures

Author

Utriainen, Mikko, Gao, Feng, Puurunen, Riikka L., Riedel, Stefan, and Kia, Alireza M.

Subjects
conformality, PillarHall, LHAR, ALD, Characterization
Abstract

Atomic Layer Deposition (ALD) technology enables manufacturing ofconformal thin films into such deep microscopic trenches and cavities thatthe film characterization becomes a true challenge. In ALD applicationsthese 3D microstructured substrates are typically vertically oriented highaspect ratio (HAR) structures. Monitoring and control of conformality reliespredominantly on cross-sectional sample preparation and SEM/TEMcharacterization. This approach has several challenges, e.g. need to breakthe wafer, seeing only thin slice, cleavage plane inaccuracy, multiplerepeated samples to get reliable data and long response times.A potential approach to circumvent the challenges is a MEMS-based allsilicon lateral high aspect ratio (LHAR) test structure, PillarHall® developedat VTT [1-2]. The LHAR test chip is IC cleanliness proven and thuspotentially compatible to any cleanroom environment. This study focusesto research questions: How reliable and accurate is LHAR test in 300 mmwafer manufacturing environment and, especially, how does it compare tovertical HAR structures.The LHAR Test Chip (LHAR3 -series, AR range 2:1 - 10000:1, 500nm gapheight) was employed for the first time on the carrier wafer in 300 mmwafer ALD process (Jusung Eureka 3000) in Fraunhofer IPMS. The ALDprocess was foundry’s default ZrO2/Al2O3 laminate process, 22 nm, carriedout in two process variation runs (A=optimized for 3D, B=planar) at sametemperature and cycle numbers. In the same run was employed LHAR andvertical trench test structures (AR 20:1). Conformality of both structureswere analyzed by SEM cross-sections, with appropriate samplepreparations.Findings show that conformality in LHAR is comparable to vertical HARwithin accuracy limits of step coverage metrology within the comparableAR range. Furthermore, in this study, higher aspect ratios in LHAR test chipshows significant differences between the process variations while in VHARthey are small. Therefore, even optical microscope metrics from LHARprovides fast relative insight to the process variations and can be utilized in monitoring. LHAR enables also access to gain more detailed compositionalinformation on the trench wall e.g. by ToF-SIMS, which is underexamination and a topic of further studies.

Published
2018

87. Fatal Spontaneous Clostridium septicum Gas Gangrene: A Possible Association With Iatrogenic Gastric Acid Suppression

Author

Wu, Yiru E., Baras, Alexander, Cornish, Toby, Riedel, Stefan, and Burton, Elizabeth C.

Subjects
Gangrene -- Health aspects, Diarrhea -- Health aspects, Colitis -- Health aspects, B cells -- Health aspects, Medical errors -- Health aspects, Gastrointestinal system -- Health aspects, Proton pump inhibitors -- Health aspects, Health
Abstract

The long-term use of proton pump inhibitors has been linked to an increased risk for the development of gastric polyps, hip fractures, pneumonia, and Clostridium difficile colitis. There is evidence that chronic acid suppression from long-term use of proton pump inhibitors poses some risk for the development of C difficile-associated diarrhea by decreasing the elimination of pathogenic microbes before reaching the lower gastrointestinal tract. Here we present a case of a 51-year-old woman with a recent history of abdominal pain and fever who presented to the emergency department with rapidly progressive spontaneous necrotizing fasciitis and gas gangrene and died within hours of presentation. Postmortem examination confirmed spreading tissue gas gangrene and myonecrosis. In addition, multiple intestinal ulcers containing Clostridium septicum were present at autopsy. This case illustrates a possible association between proton pump inhibitor therapy and fatal C septicum infection. (Arch Pathol Lab Med. 2014; 138:837-841; doi: 10.5858/arpa.2013-0104-CR), Proton pump inhibitors (PPIs) are used for the treatment of heartburn, gastroesophageal reflux disease (GERD), and peptic ulcer disease. The use of PPIs in the general population in the United [...]

Published
2014
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89. Big Data für Versicherungen. Proceedings zum 21. Kölner Versicherungssymposium am 3.11.2016 in Köln

Author

Heep-Altiner, Maria (Professor Dr.), Schnur, Bernd (Professor Dr.), Müller-Peters, Horst (Professor), Schimikowski, Peter (Professor Dr.), Kamps, Michael, Reichenbach, Volker, Schütz, Andreas, John, Daniel, and Riedel, Stefan

Subjects
Digitalisierung, Versicherung, ddc:33, ddc:330, Massendaten, Fakultät 04 / Institut für Versicherungswesen, jel:G22
Abstract

Aufgrund der schnellen technologischen Entwicklungen und den damit einhergehenden erweiterten Möglichkeiten hat für den Begriff „Big Data“ eine starke Begriffserweiterung stattgefunden – insbesondere im Dreiklang Digitalisierung / Big Data / Cloud Computing (DBC). „Big Data“ im weiteren Sinn umfasst inzwischen mindesten die Themenfelder IT & Prozesse, Methoden & Modellierung, Produktentwicklung & Kundenmanagement sowie Recht & Datenschutz. Wegen der hohen Bedeutung haben die Forschungsbereiche des ivwKöln für 2016 „Big Data“ als übergreifendes Forschungsthema gewählt. Im 21. Kölner Versicherungs-symposium wurde daher das Themenfeld in seiner Vielschichtigkeit von Referenten aus mehreren Fachrichtungen skizziert. The Caused by the technological development and the corresponding extended possibilities, an ex-tension of term “Big Data” has occurred – especially in the context of Digitalization / Big Data / Cloud Computing (DBC). In an extended definition, “Big Data” covers at least the aspects “IT & Processes”, “Methods & Modeling”, “Product Development & Client Management” as well as “Legal Aspects & Data Protection”. Because of the high relevance, the research centers of the Cologne Institute of Insurance (ivwKöln) have chosen “Big Data” as a common research topic. At the 21th Cologne Insurance Symposium, “Big Data” has been treated by speakers representing the various aspects of this topic.

Published
2017

94. Synthesis of SrTiO3 by crystallization of SrO/TiO2 superlattices prepared by atomic layer deposition.

Author

Riedel, Stefan, Neidhardt, Jörg, Jansen, Sören, Wilde, Lutz, Sundqvist, Jonas, Erben, Elke, Teichert, Steffen, and Michaelis, Alexander

Subjects
*THIN films, *SILICON, *ORGANOMETALLIC compounds, *SUBSTRATES (Materials science), *ELECTRODES
Abstract

An approach for the preparation of homogenous SrTiO3 (STO) thin films with unprecedented compositional control is presented. Nanolaminates of SrO and TiO2 were deposited at 300 °C by atomic layer deposition on bare silicon, as well as on ruthenium electrodes using metalorganic precursors [Ti(NEtMe)4 (TEMATi),Sr(iPr3Cp)2 (AbsoluteSr)]. Care was taken that the individual sublayers were grown with a number of subcycles well in the steady-state growth regime. This enabled linear composition tuning with the Sr:Ti pulse ratio, which is beneficial for process control. Still, a substrate-specific growth behavior was observed for the individual precursors leading to different cycle ratio/composition dependence for samples grown on Si as compared to Ru substrates. This could be attributed to specific nucleation conditions, which are most pronounced for the initial cycle, but also prevail throughout the film. The as-deposited layers are well separated and the sublayers are amorphous. Subsequent furnace-annealing generated polycrystalline cubic STO films, but also caused a severe distortion of the metal electrode/STO stack, due to interdiffusion. The latter was suppressed by optimized rapid thermal crystallization anneals. [ABSTRACT FROM AUTHOR]

Published
2011
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98. High-intensity interval exercise improves cognitive performance and reduces matrix metalloproteinases-2 serum levels in persons with multiple sclerosis: A randomized controlled trial

Author

Zimmer, Philipp, primary, Bloch, Wilhelm, additional, Schenk, Alexander, additional, Oberste, Max, additional, Riedel, Stefan, additional, Kool, Jan, additional, Langdon, Dawn, additional, Dalgas, Ulrik, additional, Kesselring, Jürg, additional, and Bansi, Jens, additional

Published
2017
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