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92 results on '"Qin, Zhixin"'

53. Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Author

Ma, Dingyu, primary, Rong, Xin, additional, Zheng, Xiantong, additional, Wang, Weiying, additional, Wang, Ping, additional, Schulz, Tobias, additional, Albrecht, Martin, additional, Metzner, Sebastian, additional, Müller, Mathias, additional, August, Olga, additional, Bertram, Frank, additional, Christen, Jürgen, additional, Jin, Peng, additional, Li, Mo, additional, Zhang, Jian, additional, Yang, Xuelin, additional, Xu, Fujun, additional, Qin, Zhixin, additional, Ge, Weikun, additional, Shen, Bo, additional, and Wang, Xinqiang, additional

Published
2017
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55. Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires

Author

Sun, Xiaoxiao, primary, Wang, Xinqiang, additional, Wang, Ping, additional, Sheng, Bowen, additional, Li, Mo, additional, Su, Juan, additional, Zhang, Jian, additional, Liu, Fang, additional, Rong, Xin, additional, Xu, Fujun, additional, Yang, Xuelin, additional, Qin, Zhixin, additional, Ge, Weikun, additional, and Shen, Bo, additional

Published
2017
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56. Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

Author

Wang, Ping, primary, Wang, Xinqiang, additional, Wang, Tao, additional, Tan, Chih-Shan, additional, Sheng, Bowen, additional, Sun, Xiaoxiao, additional, Li, Mo, additional, Rong, Xin, additional, Zheng, Xiantong, additional, Chen, Zhaoying, additional, Yang, Xuelin, additional, Xu, Fujun, additional, Qin, Zhixin, additional, Zhang, Jian, additional, Zhang, Xixiang, additional, and Shen, Bo, additional

Published
2017
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57. Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Author

Liu, Baiyin, Xu, Fujun, Wang, Jiaming, Lang, Jing, Wang, Liubing, Fang, Xuzhou, Yang, Xuelin, Kang, Xiangning, Wang, Xinqiang, Qin, Zhixin, Ge, Weikun, and Shen, Bo

Abstract

Correlation between electrical properties and growth dynamics for Si-doped AlGaN with Al mole fraction above 60% has been investigated. It is found that the electron concentration decreases significantly when decreasing the growth rate, while the electron mobility experiences a non-monotonic process of increasing at first and then decreasing. Combination of secondary ion mass spectroscopy and panchromatic cathodoluminescence results, reveals that the evolution of electrical properties mainly originates from compensation of III vacancy (VIII) to Si dopant, making VIII-nSi complexes, i.e., the concentrations of VIII-nSi complexes increase with decreasing the growth rate, implying high growth rate principle is vital for n-AlGaN.

Published
2024
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62. High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

Author

Rong, Xin, primary, Wang, Xinqiang, additional, Ivanov, Sergey V., additional, Jiang, Xinhe, additional, Chen, Guang, additional, Wang, Ping, additional, Wang, Weiying, additional, He, Chenguang, additional, Wang, Tao, additional, Schulz, Tobias, additional, Albrecht, Martin, additional, Jmerik, Valentin N., additional, Toropov, Alexey A., additional, Ratnikov, Viacheslav V., additional, Kozlovsky, Vladimir I., additional, Martovitsky, Victor P., additional, Jin, Peng, additional, Xu, Fujun, additional, Yang, Xuelin, additional, Qin, Zhixin, additional, Ge, Weikun, additional, Shi, Junjie, additional, and Shen, Bo, additional

Published
2016
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66. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Author

Cheng, Jianpeng, primary, Yang, Xuelin, additional, Sang, Ling, additional, Guo, Lei, additional, Zhang, Jie, additional, Wang, Jiaming, additional, He, Chenguang, additional, Zhang, Lisheng, additional, Wang, Maojun, additional, Xu, Fujun, additional, Tang, Ning, additional, Qin, Zhixin, additional, Wang, Xinqiang, additional, and Shen, Bo, additional

Published
2016
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67. Photoconductivity in In_xGa_1-xN epilayers

Author

Zheng, Xiantong, primary, Guo, Lei, additional, Liang, Hongwei, additional, Wang, Ping, additional, Wang, Shibo, additional, Wang, Tao, additional, Rong, Xin, additional, Sheng, Bowen, additional, Yang, Xueling, additional, Xu, Fujun, additional, Qin, Zhixin, additional, Shen, Bo, additional, and Wang, Xinqiang, additional

Published
2016
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69. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires

Author

Wang, Ping, primary, Yuan, Ying, additional, Zhao, Chao, additional, Wang, Xinqiang, additional, Zheng, Xiantong, additional, Rong, Xin, additional, Wang, Tao, additional, Sheng, Bowen, additional, Wang, Qingxiao, additional, Zhang, Yongqiang, additional, Bian, Lifeng, additional, Yang, Xuelin, additional, Xu, Fujun, additional, Qin, Zhixin, additional, Li, Xinzheng, additional, Zhang, Xixiang, additional, and Shen, Bo, additional

Published
2016
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74. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Author

Dong, Peng, primary, Yan, Jianchang, additional, Zhang, Yun, additional, Wang, Junxi, additional, Zeng, Jianping, additional, Geng, Chong, additional, Cong, Peipei, additional, Sun, Lili, additional, Wei, Tongbo, additional, Zhao, Lixia, additional, Yan, Qingfeng, additional, He, Chenguang, additional, Qin, Zhixin, additional, and Li, Jinmin, additional

Published
2014
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77. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Author

Dong, Peng, primary, Yan, Jianchang, additional, Wang, Junxi, additional, Zhang, Yun, additional, Geng, Chong, additional, Wei, Tongbo, additional, Cong, Peipei, additional, Zhang, Yiyun, additional, Zeng, Jianping, additional, Tian, Yingdong, additional, Sun, Lili, additional, Yan, Qingfeng, additional, Li, Jinmin, additional, Fan, Shunfei, additional, and Qin, Zhixin, additional

Published
2013
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83. Effects of the artificial Ga-nitride/air periodic nanostructures on current injected GaN-based light emitters

Author

Zhang, Bei, primary, Zhang, ZhenSheng, additional, Xu, Jun, additional, Ren, Qian, additional, Jin, ChunLai, additional, Yang, ZhiJian, additional, Wang, Qi, additional, Chen, WeiHua, additional, Hu, XiaoDong, additional, Yu, TongJun, additional, Qin, ZhiXin, additional, Zhang, GuoYi, additional, Yu, DaPeng, additional, and Zhang, BaoPing, additional

Published
2005
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87. Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaN

Author

Wei, Wei, Qin, ZhiXin, Zhao, Sheng, Liu, Fang, Fan, ShunFei, Zheng, JiaXin, and Zhang, GuoYi

Subjects
*MOLECULAR structure, *GALLIUM compounds, *THERMAL oxidation (Materials science), *GALLIUM nitride films, *CRYSTAL growth, *TEMPERATURE effect, *CHEMICAL sample preparation, *X-ray diffraction
Abstract

Abstract: Dry thermal oxidation of GaN thin films grown on Al2O3 (0001) has been performed at different temperatures. The oxidized samples were investigated through X-ray diffraction (XRD) and atomic force microscope (AFM). For samples oxidized at temperatures from 800°C to 950°C, XRD peaks from the (−201), (−402) and (−603) planes of β-Ga2O3 were observed, indicating that a β-Ga2O3 layer was formed on GaN epitaxially. The epitaxial relationships were determined to be β-Ga2O3(−201)||GaN(002) and an in-plane orientation of β-Ga2O3[010]||GaN[110]. When the oxidation temperature is increased further to 1000°C, in addition to the peaks from the (−201), (−402) and (−603) planes, extra peaks corresponding to other planes appeared, indicating that the oxidized layer had deteriorated to polycrystalline Ga2O3. [Copyright &y& Elsevier]

Published
2012
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88. Stress evolution in AlN growth on nano-patterned sapphire substrates

Author

Xie, Nan, Xu, Fujun, Wang, Jiaming, Sun, Yuanhao, Liu, Baiyin, Zhang, Na, Lang, Jing, Fang, Xuzhou, Ge, Weikun, Qin, Zhixin, Kang, Xiangning, Yang, Xuelin, Wang, Xinqiang, and Shen, Bo

Abstract

The stress evolution behavior of AlN grown on nano-patterned substrates (NPSSs) has been investigated. It is found that there are two sources of the tensile stress for AlN grown on NPSSs. One originates from the coalescence of grain islands of the AlN nucleation layer, and then the voids provide a channel for the gradual release of the tensile stress to nearly stress-free state accompanied by the lateral growth process of the AlN columns on the mesas. The other originates from the contacting of adjacent columns to complete the coalescence process, which is responsible for the residual tensile stress in the top AlN epilayer after completing the coalescence. This understanding of the stress evolution is certainly of great significance in AlN-based material and devices.

Published
2020
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89. Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.

Author

He, Chenguang, Qin, Zhixin, Xu, Fujun, Hou, Mengjun, Zhang, Shan, Zhang, Lisheng, Wang, Xinqiang, Ge, Weikun, and Shen, Bo

Subjects
*EXCITON theory, *QUANTUM wells, *DOPING agents (Chemistry), *BINDING energy, *PHOTOLUMINESCENCE
Abstract

Free exciton (FX) and bound exciton (BX) in Al0.5Ga0.5N/Al0.35Ga0.65N multiple quantum wells (MQWs) with different Si-doping levels in the well layers are investigated by photoluminescence (PL) spectra. Low temperature (10 K) PL spectra identify a large binding energy of 87.4 meV for the BX in undoped sample, and 63.6 meV for the BX in Si-doped (2 × 1018 cm−3) sample. They are attributed to O-bound and Si-bound excitons, respectively. The large binding energies of BX are assumed to originate from the strong quantum confinement in the quantum wells, which also leads to a stronger FX PL peak intensity in comparison with BX at 10 K. Si-doping is found to suppress the FX quenching by reducing threading dislocation density (TDD) in the well layers, leading to a significant improvement of IQE from 33.7% to 45%. [ABSTRACT FROM AUTHOR]

Published
2015
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90. Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters.

Author

Wang J, Ji C, Lang J, Xu F, Zhang L, Kang X, Qin Z, Yang X, Tang N, Wang X, Ge W, and Shen B

Abstract

A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability., (© 2024. The Author(s).)

Published
2024
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91. Inhibition of HMGB1 Attenuates Spinal Cord Edema by Reducing the Expression of Na + -K + -Cl - Cotransporter-1 and Na + /H + Exchanger-1 in Both Astrocytes and Endothelial Cells After Spinal Cord Injury in Rats.

Author

Li M, Lv J, Wang Z, Wang L, Qin Z, Deng C, Liu J, and Sun L

Subjects
Animals, Female, Rats, Adaptor Proteins, Vesicular Transport metabolism, Astrocytes metabolism, Edema metabolism, Endothelial Cells metabolism, NF-kappa B metabolism, Oxygen metabolism, Sodium metabolism, Spinal Cord, Toll-Like Receptor 4 metabolism, Water metabolism, HMGB1 Protein metabolism, Spinal Cord Injuries complications, Spinal Cord Injuries metabolism
Abstract

Sodium/water transport through Na + -K + -Cl - cotransporter-1 (NKCC1) and sodium/hydrogen exchanger-1 (NHE1) in both astrocytes and endothelial cells is critical to cytotoxic and ionic edema following spinal cord injury (SCI). High-mobility group box-1 (HMGB1) promotes spinal cord edema after SCI. Accordingly, we sought to identify both the role of HMGB1 and the mechanism of its effect on NKCC1 and NHE1 expression in astrocytes and endothelial cells as well as the role of the regulation of spinal cord edema after SCI. An SCI model was generated in adult female rats using a heavy falling object, and an in vitro oxygen-glucose deprivation/reoxygenation (OGD/R) model was generated in rat spinal cord astrocytes and microvascular endothelial cells. The inhibition of HMGB1 reduced NKCC1 and NHE1 expression in the spinal cord of SCI rats, in cultured spinal cord astrocytes, and in cultured microvascular endothelial cells. The effects of HMGB1 on NKCC1 and NHE1 expression were mediated-at least in part-by activation of the Toll-like receptor 4 (TLR4)-Toll/interleukin-1 receptor domain-containing adapter inducing interferon-β (TRIF)-nuclear factor-kappa B (NF-κB) signaling pathway. The inhibition of NKCC1 or NHE1 decreased the spinal cord water content in rats following SCI, increased the Na + concentration in the medium of cultured astrocytes after OGD/R, and reduced the astrocytic cell volume and AQP4 expression. These results imply that HMGB1 inhibition results in a reduction in NKCC1 and NHE1 expression in both astrocytes and microvascular endothelial cells and thus decreases spinal cord edema after SCI in rats and that these effects occur through the HMGB1-TLR4-TRIF-NF-κB signaling pathway.

Published
2023
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92. Convenient and sensitive colorimetric detection of melamine in dairy products based on Cu(ii)-H 2 O 2 -3,3',5,5'-tetramethylbenzidine system.

Author

Han X, Qin Z, Zhao M, Song J, Qu F, Qu F, and Kong RM

Abstract

The illegal adulteration of melamine in dairy products for false protein content increase is a strong hazard to human health. Herein, a simple and sensitive colorimetric method was developed for the quantification of melamine in dairy products based on a Cu 2+ -hydrogen peroxide (H 2 O 2 )-3,3',5,5'-tetramethylbenzidine (TMB) system. In this strategy, Cu 2+ exhibits peroxidase-like activity and can catalyze the oxidation of TMB to oxidized TMB (oxTMB) in the presence of H 2 O 2 with a blue colour change of the solution. However, the presence of melamine quickly interacts with H 2 O 2 leading to the consumption of H 2 O 2 and thus strongly hinders the oxidation of TMB. Under the optimal conditions, the absorbance change of oxTMB has a linear response to the concentration of melamine from 1 to 100 μM with a detection limit of 0.5 μM for melamine. The proposed method has many merits including more simplicity, good selectivity, and more cost-effectiveness without using any nanomaterials. The method was further successfully applied to detect melamine in dairy products including milk and infant formula powder., Competing Interests: There are no conflicts of interest to declare., (This journal is © The Royal Society of Chemistry.)

Published
2018
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