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The electro-optic properties of self-organized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dots have been studied experimentally. Single-mode ridge waveguide structures were grown by molecular beam epitaxy with self-organized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dots in the guiding region. The measured linear and quadratic electro-optic coefficients are 2.58×10[sup -11] m/V and 6.25×10[sup -17] m[sup 2]/V[sup 2], respectively, which are much higher than those obtained for bulk GaAs or quantum well structures. The measured transmission characteristics indicate that low-voltage amplitude modulators can be realized with quantum dot active regions. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]