155 results on '"Pfost, Martin"'
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52. Single pulse short-circuit robustness and repetitive stress aging of GaN GITs
53. A gate driver approach enabling switching loss reduction for hard-switching applications
54. A novel gate driver approach using inductive feedback to increase the switching speed of power semiconductor devices
55. A novel dual active bridge configuration for wide voltage conversion ratios
56. An analysis of the switching behavior of GaN-HEMTs
57. Optimal Power Point tracking for PV-systems with retrofitted Energy Storage Systems
58. Efficient Simulation of Thermo-Mechanical Stress in the On-Chip Metallization of Integrated Power Semiconductors
59. Pulse robustness of AlGaN/GaN HEMTs with Schottky- and MIS-gates
60. Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
61. Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTs
62. Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs
63. Performance of a GaN-HEMT synchronous boost converter in ZVS and hard switching mode
64. On-Chip Sensors to Detect Impending Metallization Failure of LDMOS Transistors Under Repetitive Thermo-Mechanical Stress
65. Energy capability of SiC MOSFETs
66. Short-circuit safe operating area of superjunction MOSFETs
67. Influence of metallization layout on aging detector lifetime under cyclic thermo-mechanical stress
68. A setup for very high temperature measurements of power semiconductors exceeding 500 °C
69. A low-impedance TLP measurement system for power semiconductor characterization up to 700V and 400A in the microsecond range
70. Automatic layout optimization of DMOS transistors for lower peak temperatures and increased energy capability
71. Efficient simulation of thermo-mechanical stress in the on-chip metallization of power semiconductors
72. Transient junction temperature measurements of power MOSFETs in the μs range
73. A proposal for early warning indicators to detect impending metallization failure of DMOS transistors in cyclic operation
74. An Easily Implementable Approach to Increase the Energy Capability of DMOS Transistors
75. Characterization and modeling of self-heating in DMOS transistors
76. Influence of the On-Chip Metallization on Self-Heating in Integrated Power Technologies
77. Fully-coupled 3D electro-thermal field simulator for chip-level analysis of power devices
78. An experimental study of integrated DMOS transistors with increased energy capability
79. A simple approach to reduce peak temperatures in integrated and discrete power mosfets
80. Electrothermal Simulation of Self-Heating in DMOS Transistors up to Thermal Runaway
81. A setup for very high temperature measurements of power semiconductors exceeding 500 ?C.
82. Design and Operation of an Integrated High-Temperature Measurement Structure
83. Compact nonlinear thermal networks for accurate modeling of smart power ICs
84. Accurate temperature estimation in large DMOS transistors using a semi-empirical thermal conductivity model
85. Small embedded sensors for accurate temperature measurements in DMOS power transistors
86. Experimental investigation of current injection into the substrate for smart power integrated circuits
87. A simple approach for DMOS transistor modeling up to very high temperatures
88. Measurement and Simulation of Self-Heating in DMOS Transistors up to Very High Temperatures
89. Measurement and investigation of thermal properties of the on-chip metallization for integrated power technologies.
90. The Hybrid TLM-MM approach for Simulation of MMICs
91. Simulation of Substrate Coupling with Special Regard to Shielding in High-Speed Si/SiGe Bipolar ICs
92. Accurate Temperature Measurements of DMOS Power Transistors up to Thermal Runaway by Small Embedded Sensors.
93. Simulation of Substrate Coupling with Special Regard to Shielding in High-Speed Si/SiGe Bipolar ICs.
94. An Experimental Study on Substrate Coupling in Bipolar/BiCMOS Technologies.
95. Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
96. Electrical and thermal failure modes of 600 V p-gate GaN HEMTs
97. Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
98. Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
99. Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
100. Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
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