51. Giant photothermoelectric effect in silicon nanoribbon photodetectors
- Author
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Alessandro Alabastri, Zhiqiang Guan, Hongxing Xu, Peter Nordlander, Chang Liu, Weikang Liu, Jian Yang, Wei Dai, and Chao Xu
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lcsh:Applied optics. Photonics ,Materials science ,Silicon ,chemistry.chemical_element ,02 engineering and technology ,Photodetection ,010402 general chemistry ,01 natural sciences ,Article ,Responsivity ,lcsh:QC350-467 ,Energy transformation ,business.industry ,Electronics, photonics and device physics ,Doping ,Energy conversion efficiency ,lcsh:TA1501-1820 ,Photoelectric effect ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Semiconductor ,Optics and photonics ,chemistry ,Optoelectronics ,0210 nano-technology ,business ,lcsh:Optics. Light - Abstract
The photothermoelectric (PTE) effect enables efficient harvesting of the energy of photogenerated hot carriers and is a promising choice for high-efficiency photoelectric energy conversion and photodetection. Recently, the PTE effect was reported in low-dimensional nanomaterials, suggesting the possibility of optimizing their energy conversion efficiency. Unfortunately, the PTE effect becomes extremely inefficient in low-dimensional nanomaterials, owing to intrinsic disadvantages, such as low optical absorption and immature fabrication methods. In this study, a giant PTE effect was observed in lightly doped p-type silicon nanoribbons caused by photogenerated hot carriers. The open-circuit photovoltage responsivity of the device was 3-4 orders of magnitude higher than those of previously reported PTE devices. The measured photovoltage responses fit very well with the proposed photothermoelectric multiphysics models. This research proposes an application of the PTE effect and a possible method for utilizing hot carriers in semiconductors to significantly improve their photoelectric conversion efficiency., Light: Science & Applications photothermoelectric effect in silicon: a giant leap from light to electricity Silicon nanoribbons can achieve a three to four orders of magnitude increased photovoltage response by photothermoelectric effect, relative to previously developed low-dimensional materials, offering greatly improved photoresponse, and practical application for on-chip photodetectors or power supplies. In the photothermoelectric effect, photoelectric conversion is achieved by the optical-induced temperature difference in the carrier system. The photothermoelectric effect is expected to utilize the hot carrier energy which is wasted in the traditional photoelectric conversion. The past reported photothermoelectric effect was in low-dimensional materials, such as carbon nanotubes, III–V semiconductor nanowires, dichalcogenide materials, and graphene. Researchers in China and the USA, led by Zhiqiang Guan and Hongxing Xu at Wuhan University, China, extended this effect to silicon nanomaterials. The successful observation of photothermoelectric effect in silicon relies on the low doping concentrations and nanometer size of the silicon nanoribbon. Ohmic electrode contact is also important to reveal the photothermoelectric effect instead of photovoltaic effect. This innovation greatly expands the practical application by the photothermoelectric effect and utilizes the hot carrier energy thus improve the photoelectric conversion efficiency. It could lead to more efficient light-powered systems, ranging from photo-detecting devices to solar cells.
- Published
- 2020
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