85 results on '"Palau J.-M."'
Search Results
52. A new procedure for static RAM evaluation under X-ray pulses
53. Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs
54. Essais d'accroissement de la barrière du contact métal/InP type n par l'introduction artificielle d'états accepteurs
55. The use of charge-pumping for characterizing irradiated power MOSFETs.
56. A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event.
57. Evidence of the sensitivity inhomogeneity of power MOSFETs' cells to single event burnout.
58. Simulation of heavy ion latchup cross section curves.
59. Impact ionization influence on the photocurrent of an irradiated junction.
60. SEB occurrence in a VIP: influence of the epi-substrate junction.
61. Failure mode of different irradiated power IGBT structures.
62. Use of 2D simulations to study parameters influence on SEB occurrence in n-channel MOSFETs.
63. DASIE Analytical Version: A Predictive Tool for Neutrons, Protons and Heavy Ions Induced SEU Cross Section.
64. Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code.
65. Study of the GaAs-Au and Si-SiO2 interface formation by the Kelvin method.
66. Cinétique d'absorption de l'oxygène sur SnO2 : dispositif de mesure du travail de sortie des électrons
67. Improvement of the verification and validation methodology for the new CEA APOLLO3® neutronic code
68. Verification, validation and uncertainty quantification for neutronic calculation for ASTRID fast reactor detailed design
69. AP0LL03®: CEA/DEN Deterministic multi-purpose code for reactor physics analysis
70. New reference APOLLO3® calculation scheme for sodium cooled fast reactors: From sub-assembly to full-core calculations
71. Study of the radiation tolerance of ICs for LHC
72. Recent progress in the V&V of the new CEA APOLLO3® code: Advanced SFR/LWR assembly calculations
73. Fermi level pinning on (110) GaAs surfaces studied by CPD and SPV topographies
74. On the interest of a current amplifier associated with a Kelvin vibrating capacitor
75. Cinétique d’adsorption de l’oxygène sur le dioxyde d’étain par des mesures du travail de sortie des électrons et par thermogravimetrie
76. Surface and contact properties of GaAs overlaid by silver
77. Design and performance of a Kelvin probe for the study of topographic work functions
78. The use of charge-pumping for characterizing irradiated power MOSFETs
79. SEB occurrence in a VIP: influence of the epi-substrate junction
80. A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event
81. Simulation of heavy ion latchup cross section curves
82. Evidence of the sensitivity inhomogeneity of power MOSFETs' cells to single event burnout
83. Contribution of device simulation to SER understandfng
84. Failure mode of different irradiated power IGBT structures
85. Impact ionization influence on the photocurrent of an irradiated junction
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