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The application of organic crystal in different photoelectric device has different demand on the crystal structure and morphology, while the self‐assembly of different materials into crystals with a desired morphology remains a challenge. Herein, using three binary halogen‐bonded cocrystals involving a nonplanar halogen accepter molecule tetra(4‐pyridyl)‐tetrathiafulvalene (TTF(py)4), co‐crystallized with halogen donor aryl iodides C6F6‐xIx (x = 2,3, 1,3,5‐trifluoro‐2,4,6‐triiodobenzene (IFB), meta‐1,3‐diiodotetrafluorobenzene (mdIFB) or para‐1,3‐diiodotetrafluorobenzene (pdIFB)), are reported. TTF(py)4‐IFB cocrystals are formed primarily via N···I halogen bonds and F···H hydrogen bonds, while TTF(py)4‐mdIFB cocrystals and TTF(py)4‐pdIFB cocrystals are formed primarily via π–π Interactions, N···I halogen bonds and F···H hydrogen bonds, homogeneous π–π interactions are dominant in TTF(py)4‐mdIFB, while heterogeneous π–π interactions are dominant in TTF(py)4‐pdIFB. Through predicted morphology based on the attachment energy (Eatt) theory, especially π–π interaction, the influence of intermolecular interactions on crystal morphology is analyzed. The study demonstrates that the π–π interaction plays an important role in regulating the crystal structure and morphology, the work provides a deeper understanding of π–π interactions in nonplanar binary halogen‐bonded cocrystals. [ABSTRACT FROM AUTHOR]

Omnidirectional photosensing is crucial in optoelectronic devices, enabling a wide field of view (wFoV) and leveraging potential applications for the Internet of Things in sensors, light fidelity, and photocommunication. The wFoV helps overcome the limitations of line‐of‐sight communication, and transparent photodetection becomes highly desirable as it enables the capture of optical information from various angles. Therefore, developing a photoelectric device with a 360° wFoV, ultra sensitivity to photons, power generation, and transparency is of utmost importance. This study utilizes a heterojunction of van der Waals SnS with Ga2O3 to fabricate a transparent photovoltaic (TPV) device showing a 360° wFoV with bifacial onsite power production. SnS/Ga2O3 heterojunction preparation consists of magnetron sputtering and is free from nanopatterning/nanostructuring to achieve the desired wFoV window device. The device exhibits a high average visible transmittance of 56%, generates identical power from bifacial illumination, and broadband fast photoresponse. Careful analysis of the device shows an ultra‐sensitive photoinduced defect‐modulated heterojunction and photocapacitance, revealed by the impedance spectroscopy, suggesting photon‐flux driven charge diffusion. Leveraging the wFoV operation, the TPV embedded visual and speech photocommunication prototype demonstrated, aiming to help visually and auditory impaired individuals, promising an environmental‐friendly sustainable future. [ABSTRACT FROM AUTHOR]

Mn2+-doped perovskites nanocrystals (NCs) have already been extensively studied in fascinating optical, electronic, and magnetic properties. Such interesting traits make them paid considerable attention in light emitting diodes, solar cells, etc. However, the underlying thermal and photophysical processes governing the overall charge carrier dynamics in Mn-doped NCs are far from clear. Herein, trap concentration and thermalization-dependent optical properties of Mn–Cu co-doped CsPbCl3 NCs were investigated via using steady-state, time-resolved PL spectra, variable-temperature PL spectra, and ultrafast transient absorption spectra. The combined experimental and theoretical studies reveal that Cu2+, as an effective hole trap, can trap the holes from Mn2+ and emit the holes to Mn2+ level at lighter and higher doping, respectively. Moreover, this hole trap is highly thermally sensitive, which is responsible for the abnormal thermal effect of Mn2+ emission with increasing temperature. These findings demonstrate an approach of charge regulation through ion doping, which is meaningful for fabricating efficient photoelectric materials and devices. [ABSTRACT FROM AUTHOR]

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next‐generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next‐generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light‐emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed. [ABSTRACT FROM AUTHOR]

The bandwidth-tunable absorption enhancement of monolayer graphene is theoretically studied in the near-infrared wavelengths. The monolayer graphene is placed on the silver substrate surface with a periodic array of one-dimensional slits. Two absorption peaks are found to result from the hybridization of delocalized surface plasmon polaritons and localized magnetic plasmons. The positions of absorption peaks are accurately predicted by a coupling model of double oscillators. The full width at half maximum of absorption peaks is largely tuned from about 1–200 nm by changing the array period of slits. The effect of the slit size on absorption peaks is also investigated in detail. Our work is promising in applications for photoelectric devices. [ABSTRACT FROM AUTHOR]

Hierarchically porous metal‐oxide materials have immense potential for many fields, which are highly desired to tackle the limitations of mono‐porous architectures, and to combine the advantages of different pore scales. Herein, a simple small‐molecule‐assisted interfacial assembly strategy, which elegantly combines the mesoscale block copolymers (BCPs)‐directed coassembly and nanoscale phase separations of dicyandiamide (DCDA), is developed for the synthesis of centimeter‐sized inorganic metal‐oxide films with multiscale porosity. The synthetic approach is versatile and can be broadly applied for the fabrication of hierarchically mesoporous metal‐oxide films with single (TiO2, ZrO2, Al2O3) or binary components (TiO2–ZrO2 and TiO2–Al2O3) on various substrates ranging from 1D to 3D. The as‐prepared films possess ordered structures, uniform thickness, interconnected pores, highly crystallized frameworks, and high surface areas (>200 m2 g−1). As a proof of concept, the photoelectric device assembled by the hierarchically mesoporous TiO2 films (denoted as H–TiO2) shows excellent performance, including a high photocurrent of 0.68 mA cm−2 and outstanding stability. The presented method may provide new insight into the controllable synthesis of hierarchically porous materials. [ABSTRACT FROM AUTHOR]

Aromatic heterocyclic compounds have received a lot of interest due to their various important medicinal and biological applications. The broad synthetic investigation and functional usefulness of heterocyclic molecules is driving a surge in research interest. They are found in more than 90% of innovative medications and bridge the gap between biology and chemistry, where so much scientific discovery and application happens. Heterocycles are also useful in a variety of domains, including pharmaceutical chemistry, biochemistry, and others. In this article, quantitative structure‐property relationship (QSPR) models is developed using sombor indices to predict fluorescence properties of aromatic hetero‐cyclic species based on their structural features. This allows researchers to estimate the fluorescence behavior of new molecules without performing experimental measurements. As an application, we have computed the sombor indices for self‐assembled supramolecular graphs made of terpyridine (TPE) and tetraphenylethylene (TPY) molecules that are produced as rosette cycles. This form of rosettes graph is used in electrical sensors, light emitting diodes, bioimaging and photoelectric devices, and so on. Tetraphenylethylene can be used to make fluorescent probes for next‐generation sensing applications with typical induced aggregative emission behavior. [ABSTRACT FROM AUTHOR]

A van der Waals (vdW) heterostructure is formed by combining multiple materials through vdW bonds. It can combine the advantages of electronic, optical, thermal, and magnetic properties of different 2D materials and has the potential to develop into the next generation of high‐performance functional devices. Herein, the current research advances of vdW heterostructures are reviewed. First, current fabrication methods and physical structures of vdW heterostructures are summarized. The 2D/nD (n = 0,1,2,3) mixed‐dimensional heterostructures are discussed in detail. Second, a new type of vdW heterostructure is introduced based on two‐dimensional electron gas with a nanoscale junction interface. Finally, the application prospects of vdW heterostructures in photoelectric and memory devices are further outlined by combing new applications in the neural networks. This review shows that vdW heterostructures have great advantages in high integration, energy harvesting, and logical operations, and it provides directions and suggestions for the future research and application of environmentally friendly, high‐performance, and smart functional devices.

This document is an editorial summarizing a special issue of the journal "Materials" titled "Colloidal Quantum Dots for Nanophotonic Devices." Colloidal quantum dots (CQDs) are a class of materials with unique advantages, such as tunability of emission wavelength and low-cost solution processibility. They have potential applications in fields like biological medicine, optoelectronics, and quantum information. The special issue contains ten articles, including research and review articles, covering topics such as CQD growth, chemical transformations, and device fabrication. The editorial highlights some of the articles, including those on infrared photodetectors, microspectrometers, photovoltaic devices, and optical material characteristics. [Extracted from the article]

Lead halide perovskites (LHPs) are emerging as promising candidates for use in various high-performance optoelectronic applications, yet their photophysics remains a topic of debate. Here, we theoretically investigated how the ultrafast optical properties of a few prototype LHPs are affected by many-body interactions, including the bandgap renormalization (BGR) effect, the band-filling (BF) effect, the free-carrier absorption effect, and the exciton effect, at carrier densities ranging from 1016 to 1019 cm−3. The results show that the exciton absorption becomes more obvious near the bandgap with increasing exciton energy (as the halogen component of the LHP is varied from I to Cl). Transient reflectivity results indicate that the signal has one peak below the bandgap as a result of the BGR effect at low carrier densities and one valley above the bandgap originating from the BF effect at high carrier densities. In addition, the absorbance decreases with increasing the carrier density as a result of the BF effect because the filled energy levels are observed at 2 meV above the bottom of the conduction band. The results of the present work are expected to promote the application of LHPs in solar cells, light-emitting diodes, and other photoelectric devices. [ABSTRACT FROM AUTHOR]

Regulating the interlayer transfer of excited charges is challenging but crucial for high-efficiency photoelectric conversion devices based on semiconductor heterojunction. In this work, the interlayer transfer and recombination of excited charges are investigated for the heterobilayers based on monolayer MoSSe and WS2 by combining density functional theory calculation with nonadiabatic molecular dynamics simulation. Our results reveal that the heterobilayers possess type-II band alignments and the interface engineering from S–Se to S–S stacking configuration reverses the spatial distribution of valence and conduction bands from MoSSe and WS2 to WS2 and MoSSe layers, respectively, which produces interlayer transfer of excited charges in opposite direction. The interface engineering also causes the delocalization of out-of-plane phonon states from the WS2 layer to both WS2 and MoSSe layers. This delocalized character in S–S configuration facilitates the simultaneous coupling of out-of-plane phonon states with the localized donor and acceptor electronic states, accelerates the motion of interface atoms, and reduces the band energy differences, which synergistically promote interlayer transfer of excited charges. As a result, the interlayer transfer of excited charges in S–S configuration is faster than that in S–Se configuration. Our investigation demonstrates that delocalizing phonon states through interface engineering can regulate electron–phonon coupling and interlayer transfer of excited charges. [ABSTRACT FROM AUTHOR]

Metal–organic frameworks (MOFs) with mobile charges have attracted significant attention due to their potential applications in photoelectric devices, chemical resistance sensors, and catalysis. However, fundamental understanding of the charge transport pathway within the framework and the key properties that determine the performance of conductive MOFs in photoelectric devices remain underexplored. Herein, we report the mechanisms of photoinduced charge transport and electron dynamics in the conductive 2D M−HHTP (M=Cu, Zn or Cu/Zn mixed; HHTP=2,3,6,7,10,11‐hexahydroxytriphenylene) MOFs and their correlation with photoconductivity using the combination of time‐resolved terahertz spectroscopy, optical transient absorption spectroscopy, X‐ray transient absorption spectroscopy, and density functional theory (DFT) calculations. We identify the through‐space hole transport mechanism through the interlayer sheet π–π interaction, where photoinduced hole state resides in HHTP ligand and electronic state is localized at the metal center. Moreover, the photoconductivity of the Cu−HHTP MOF is found to be 65.5 S m−1, which represents the record high photoconductivity for porous MOF materials based on catecholate ligands. [ABSTRACT FROM AUTHOR]

Integrated hierarchical microstructures composed of organic micro/nanocrystals with defined morphology have received great interest as candidates for advanced photonic circuits. Herein, the synthesis of highly ordered multilevel homogenous hyperbranched networks (HHNs) made of the individual organic compound 2, 3‐dicyanine naphthalene via a facile solution self‐assembly route is reported. The selective growth of branches on the sidewall of the backbone driven by the lattice match mechanism leads to the formation of higher‐level snowflake‐like configuration of the HHNs. These well‐organized HHNs perform excellent abilities of directional asymmetry photon transport and hierarchical polarization filtering. Combined with the doping strategy, the broad emission range of hyperbranched network heterostructures is expanded, and even the white light emission with Commission Internationale de L'Eclairage coordinates at (0.30, 0.33) is realized. This work provides deep insight into the rational creation of complex organic heterostructures for novel photoelectric devices with desired performances. [ABSTRACT FROM AUTHOR]

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed. [ABSTRACT FROM AUTHOR]

Monolayer molybdenum disulfide (MoS2) has weak light absorption due to its atomically-thin thickness, thus hindering the development of MoS2-based optoelectronic devices. CdSxSe 1 − x has excellent photoelectric performance in the visible light range, and its nanostructure shows great potential in new nanoscale electronic and optoelectronic devices. In this work, a composite photodetector device with the combination of monolayer MoS2 nanosheets and CdS 0. 4 2 Se 0. 5 8 nanobelts has been successfully prepared, which can not only maintain the inherent excellent properties of the two blocks, but also play a synergistic role between them, thus improving the photoelectric performance of the device. The monolayer MoS2 nanosheet /CdS 0. 4 2 Se 0. 5 8 nanobelt photodetector has a wide spectral response range (400–800 nm), high responsivity (527.22 A/W) and large external quantum efficiency (EQE) (1. 0 6 × 1 0 5 %). Compared with the isolated monolayer MoS2 nanosheet, both the responsivity and EQE of the hybrid photodetector are increased by 117.4 times under 620 nm illumination. This study provides a way to prepare hybrid photodetectors with wide spectral response and high responsivity. [ABSTRACT FROM AUTHOR]

The ternary chalcogenide AgBiS2 has attracted widespread attention in the field of photovoltaic and photoelectric devices due to its excellent properties. In this study, AgBiS2 powders with an average diameter of 200 nm were prepared via a simple and convenient reflux method from silver acetate, bismuth nitrate pentahydrate, and n-dodecyl mercaptan. The adjustment of the ratios of Ag:Bi:S raw materials and of the reaction temperatures were carried out to investigate the significance of the synthesis conditions toward the composition of the as-synthesized AgBiS2. The results of XRD indicated that the powders synthesized at a ratio of 1.05:1:2.1 and a synthesis temperature of 225 °C have the lowest bismuth content and the highest purity. The synthesized AgBiS2 crystallizes in a rock salt type structure with the cubic F m 3 ¯ m space group. Scanning and transmission electron microscopy, thermogravimetric analysis, ultraviolet–visible–near-infrared spectra, and photocatalytic degradation performance were employed to characterize the as-synthesized samples. The results demonstrated that AgBiS2 powders display thermal stability; strong absorption in the ultraviolet, visible, and partial infrared regions; and an optical bandgap of 0.98 eV. The obtained AgBiS2 powders also have a good degradation effect on the methylene blue solution with a degradation efficiency of 58.61% and a rate constant of 0.0034 min−1, indicating that it is an efficient strategy for sewage degradation to reduce water pollution. [ABSTRACT FROM AUTHOR]

High power semiconductor laser is a kind of photoelectric device with high efficiency and high stability, the performance of its drive system directly affects its output characteristics and service life. In order to solve the problems of stability and robustness of the output power of the semiconductor laser, a semiconductor laser driving power supply with high efficiency, low ripple and strong anti-interference ability was developed. In this paper, the topology of the LCC resonant converter is adopted (LCC refers to the type of resonant converter, because its resonator is composed of an inductor L and two capacitors C, it is called LCC resonant converter). The power supply adopts full-bridge LCC resonant power topology. Firstly, a mathematical model is established to analyze the relationship between LCC resonator parameters and output current gain. Secondly, an LCC resonator parameter design method is proposed to reduce the current stress of components, and the variable frequency phase shift (PFM-PWM) composite control strategy and linear active disturbance rejection control (LADRC) algorithm are proposed, which not only ensures the zero voltage (ZVS) conduction of MOS (Metal-Oxide-Semiconductor) tube, but also reduces the on-off loss of MOS tube. The PFM-PWM composite control strategy and LADRC algorithm not only improve the power efficiency of the drive power supply, suppress the output current ripple, but also ensure that the output current of the drive power supply is stable when the input voltage, load and parasitic parameters of the circuit change. Finally, the simulation and experimental results show that the power supply can be continuously adjustable in the output current range of 0–40 A, the current ripple is less than 0.8%, and the working efficiency is up to 92%. It has the characteristics of high stability, small ripple, high efficiency, low cost and good robustness. [ABSTRACT FROM AUTHOR]

Afterglow materials are attracting widespread attention owing to their distinctive and long-lived optical emission properties which create exciting opportunities in various fields. Recent research has led to the discovery of many new afterglow materials featuring high photoluminescence quantum yields (PLQY) and lifetimes of up to several hours under ambient conditions. Afterglow materials are typically categorized according to their luminescence mechanism, such as long-persistent luminescence (LPL), room temperature phosphorescence (RTP), or thermally activated delayed fluorescence (TADF). Through rational design and novel synthetic strategies to modulate spin–orbit coupling (SOC) and populate triplet exciton states (T1), luminophores with long lifetimes and bright afterglow characteristics can be realized. Initial research towards afterglow materials focused mainly on pure inorganic materials, many of which possessed inherent disadvantages such as metal toxicity or low energy emissions. In recent years, organic–inorganic hybrid afterglow materials (OIHAMs) have been developed with high PLQY and long lifetimes. These hybrid materials exploit the tunable structure and easy processing of organic molecules, as well as enhanced SOC and intersystem crossing (ISC) processes involving heavy atom dopants, to achieve excellent afterglow performance. In this review, we begin by briefly discussing the structure and composition of inorganic and organic–inorganic hybrid afterglow materials, including strategies for regulating their lifetime, PLQY and luminescence wavelength. The specific advantages of organic–inorganic hybrid afterglow materials, including low manufacturing costs, diverse molecular/electronic structures, tunable structures and optical properties, and compatibility with a variety of substrates, are emphasized. Subsequently, we discuss in detail the fundamental mechanisms used by afterglow materials, their classification, design principles, and end applications (including sensing, anticounterfeiting, and photoelectric devices, among others). Finally, existing challenges and promising future directions are discussed, laying a platform for the design of afterglow materials for specific applications. [ABSTRACT FROM AUTHOR]

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 × 1013/cm2, and the capture cross section is σ = 8.5 × 1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test. [ABSTRACT FROM AUTHOR]

The unremitting development of portable vertical jump equipment emphasizes the need for continual examination of its validity and reliability. Equal representation between sexes should be endorsed in this process to improve precision and application. This study aimed to examine the concurrent validity and reliability of the Exsurgo g-Flight™ photoelectric boxes and the Output Sports V2™ accelerometer for calculating vertical jump height when compared to a dual force plate system (Hawkin Dynamics Force Plate, ME, USA). Twenty (n = 20) female soccer players performed three counter movement jumps on two different sessions for a total of 120 jumps. Comparisons between the criterion method and secondary measures were performed using Bland–Altman plots and were independently examined using a paired samples t-test. Reliability in instrument error was determined by comparing the residuals of each secondary measure over two assessments. Bland–Altman plots revealed ≤ 5.0% of residuals for the accelerometer and photoelectric devices fell outside the limits of agreement. The accelerometer revealed a mean bias (95% CI) of 0.30 ± 0.33 cm, while the photoelectric device demonstrated a negative bias of −1.64 ± 0.45 cm. Mean (± SD) comparisons revealed an overestimation in jump height with the photoelectric device (1.6 ± 4.0 cm, p < 0.0001) and insignificant differences with the accelerometer (0.30 ± 3.7 cm, p > 0.05). Mean differences in residuals between testing dates for secondary measures were insignificant (p ≥ 0.23). Both the photoelectric and accelerometer instruments displayed high reliability, but differences in the accuracy between devices were observed. [ABSTRACT FROM AUTHOR]

Borophene is a novel two-dimensional material with abundant crystal structure and photoelectric properties. We focus on the effect of co-doping on the electronic structure and optical properties of borophene using the first-principles method. The results show that the structure of Al and Ga co-doped borophene is obviously distorted because Al and Ga atoms have formed bonds with a bond length of 2.378 Å, and the two B atoms that bond together with Al and Ga are no longer formed bonds. However, it is also a two-dimensional planar structure after co-doping. After co-doping, the band gap width of the borophene system is narrowed from 1.409 eV to 1.376 eV, and the band gap is narrowed by 0.033 eV. Mulliken population analysis shows an obvious charge transfer between Al-B and Ga-B atoms in the co-doped borophene. The calculation of optical properties shows that the static dielectric constant ε1 (0) increases from 5.08 to 7.01, and ε2 (ω) is larger than that of the undoped sample in the low-energy range. Thus, the co-doping of Al and Ga can enhance the electromagnetic energy storage capacity and the visible light absorption ability. Although the reflectance of borophene is reduced by co-doping (the peak of the reflectivity can be decreased from 71% to 61% at E = 2.94 eV), it still presents metallic reflection characteristics. The static refractive index n0 can be increased from 2.25 to 2.65 by co-doping. The extinction coefficient shows strong band edge absorption at the low-energy range with an absorption edge of 0.85 eV. The light loss is limited to a very narrow energy range of approximately 7.30 eV, which indicates that borophene co-doped with Al and Ga can also be used as a light storage material. The optical conductivity reaches its maximum at E = 1.78 eV and 2.52 eV, which correspond to the light irradiation with a wavelength of 698 nm (red light) and 492 nm (cyan light), respectively. The results show that the Al-Ga co-doped borophene is sensitive to cyan light and red light, so it can be used to make photosensitive devices. The results can hopefully fill the gap in the application of borophene in semiconductor photoelectric devices and provide a theoretical basis for its application. [ABSTRACT FROM AUTHOR]

A passive localization algorithm based on UAV aerial images and Angle of Arrival (AOA) is proposed to solve the target passive localization problem. In this paper, the images are captured using fixed-focus shooting. A target localization factor is defined to eliminate the effect of focal length and simplify calculations. To synchronize the positions of multiple UAVs, a dynamic navigation coordinate system is defined with the leader at its center. The target positioning factor is calculated based on image information and azimuth elements within the UAV photoelectric reconnaissance device. The covariance equation is used to derive AOA, which is then used to obtain the target coordinate value by solving the joint UAV swarm positional information. The accuracy of the positioning algorithm is verified by actual aerial images. Based on this, an error model is established, the calculation method of the co-localization PDOP is given, and the correctness of the error model is verified through the simulation of the Monte Carlo statistical method. At the end of the article, the trackless Kalman filter algorithm is designed to improve positioning accuracy, and the simulation analysis is performed on the stationary and moving states of the target. The experimental results show that the algorithm can significantly improve the target positioning accuracy and ensure stable tracking of the target. [ABSTRACT FROM AUTHOR]

Perovskite solar cells are an attractive technology for renewable energy production. However, stability issues with the electron transport layer (ETL), particularly the colloidal tin oxide (SnO2) solution, can impact cell efficiency. In this study, a novel acidization treatment is introduced to reactivate long‐time stored SnO2 solutions, which previously led to low‐efficiency perovskite solar cells. The acidization treatment results in enhanced conductivity of the SnO2 layer, improved perovskite film quality, and ultimately increased efficiency. These findings show that a 1‐month stored SnO2 solution treated with acetic acid produces a device with a photoelectric conversion efficiency (PCE) of 20.9%, compared to 13.5% efficiency without treatment. With the addition of PEAI, the champion efficiency of the acetic acid‐treated device is 22.3%. This study provides a simple and effective engineering approach to fabricating high‐performance and stable ETLs for perovskite solar cells. [ABSTRACT FROM AUTHOR]

The development of an efficient fabrication route to achieve high‐resolution perovskite pixel array is key for large‐scale flexible image sensor devices. Herein, a high‐resolution and stable 10 × 10 flexible PDs array based on formamidinium(FA+) and phenylmethylammonium (PMA+) quasi‐2D (PMA)2FAPb2I7 (n = 2) perovskite is demonstrated by developing SiO2‐assisted hydrophobic and hydrophilic treatment process on polyethylene terephthalate substrate. By introducing Au nanoparticles (Au NPs), the perovskite film quality is improved and grain boundaries are reduced. The mechanism by which Au NPs upgrade the photoelectric quality of perovskite is mainly revealed by glow discharge‐optical emission spectroscopy (GD‐OES) and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS). To further improve the photoelectric performance of the devices, a post‐treatment strategy with formamidinium chloride (FACl) is used. The optimized flexible PDs arrays show excellent optoelectronic properties with a high responsivity of 4.7 A W−1, a detectivity of 6.3 × 1012 Jones, and a broad spectral sensitivity. The device also exhibits excellent electrical stability even under severe bending and excellent flexural strength, as well as excellent environmental stability. Finally, the integrated flexible PDs arrays are used as sensor pixels in an imaging system to obtain high‐resolution imaging patterns, demonstrating the imaging capability of the PDs arrays. [ABSTRACT FROM AUTHOR]

In this paper, a plasmon resonance-enhanced narrow-band absorber based on the nano-resonant ring array of transparent conductive oxides (TCOs) is proposed and verified numerically. Due to the unique properties of TCOs, the structure achieves an ultra-narrowband perfect absorption by exhibiting a near-field enhancement effect. Consequently, we achieve a peak absorption rate of 99.94% at 792.2 nm. The simulation results indicate that the Full Width Half Maximum (FWHM) can be limited to within 8.8 nm. As a refractive index sensor, the device reaches a sensitivity S of 300 nm/RIU and a Figure of Merit (FOM) value of 34.1 1/RIU. By analyzing the distribution characteristics of the electromagnetic field at the 792.2 nm, we find high absorption with a narrow FWHM of the ITO nano-resonant ring (INRR) owing to plasmon resonance excited by the free carriers at the interface between the metal and the interior of the ITO. Additionally, the device exhibits polarization independence and maintains absorption rates above 90% even when the incident formed by the axis perpendicular to the film is greater than 13°. This study opens a new prospective channel for research into TCOs, which will increase the potential of compact photoelectric devices, such as optical sensing, narrowband filtering, non-radiative data transmission and biomolecular manipulation. [ABSTRACT FROM AUTHOR]

Given the tremendous interest in next-generation photoelectric conversion devices, such as tandem solar cells, indoor photoelectric conversion devices, and image sensors, the development of device-specific electron transport materials is essential for achieving high performance. Sn-based semiconductors are one of the edge materials with the potential to satisfy these requirements. In particular, ternary stannate compounds have shown high potential as electron transport electrodes in several impressive studies. However, systematic research on the electronic band structure and chemical bonding characteristics of these materials remains insufficient. In this study, we present the effect of cations on the crystal structure and electronic band structure of ternary stannate compounds, MSnO 3 (MSO, M = Ca, Sr, and Ba) and N 2 SnO 4 (N2SO, N = Ca, Sr, Ba, and Zn). Additionally, their potential as electron transport electrodes is verified by application in dye-sensitized solar cells (DSCs). Notably, although BaSnO 3 (BSO) and Zn 2 SnO 4 (Z2SO) had inferior dye adsorption properties, they exhibited higher overall performance in DSCs than the other stannate compounds. The origin of the excellent performances of BSO and Z2SO is attributed to their supportive electronic band features, including the lower flat-band potential and conduction band than that of the lowest unoccupied molecular orbital level of N719 dye and excellent charge transport property. This study highlights the decisive impact of the electronic band structure and charge transport ability of stannate compounds on the photoelectric conversion performance and provides design guidelines for developing new charge transport materials. [ABSTRACT FROM AUTHOR]

Recent research has indicated that metal nanoparticles, known for their unique optical properties, can enhance the spectral response of photovoltaic modules. Since most nanoparticles demonstrate enhancement effects within a specific wavelength range, broadening the spectral response of photoelectric devices is critical for their application in imaging, energy harvesting, and optical communication. In this study, we applied flower-like silver particles to achieve this broadband enhancement. The optical absorption of photovoltaic modules, featuring an amorphous Si p-i-n structure, was improved across a broad wavelength range of 400~2000 nm by integrating these flower-like silver particles, resulting in an approximately tenfold increase in peak spectral responsivity. The theoretical investigation further elaborates that the enhancement originates from the near-field effects of silver particles due to the interaction of different parts of the flower-like silver particles. Through these studies, we demonstrate that utilizing the flower-like silver particles with roughness surface can achieve the spectral response of the photoelectric device enhanced in broadband range, which can improve the utilization efficiency of optical energy for the applications of sensing, imaging, optical communication, and energy harvesting. [ABSTRACT FROM AUTHOR]

Ternary copper chalcogenide semiconductors made of copper antimony sulfide (CuSbS2) are promising absorbers for high‐performance photoelectric devices due to their non‐toxic, abundant constituent elements and superior optoelectronic characteristics. However, the presence of a large number of CuSb antisite defects and atomic disorder suppress its performance in photodetection. Herein, a non‐vacuum, facile spin‐coating method based on an organic molecular precursor solution is employed to fabricate the preferable CuSbS2 thin films. With the aid of good adhesion between precursor solution and substrate, compact CuSbS2 thin films are in situ grown on the substrate. Meanwhile, the isoelectronic element of Ag‐doped CuSbS2 thin films can be realized by introducing Ag of varying amounts in the precursor. As a result, the concentration of CuSb defects decreases monotonically as the ratio of Ag/(Ag + Cu) increases from 0% to 5%. Compared with the undoped CuSbS2 device, the 5% Ag‐doped CuSbS2 photodetector achieves the optimum responsibility (R) of 244.48 A W−1, the external quantum efficiency (EQE) of 749.28% and the specific detectivity (D*) of 8.73 × 1012 Jones, which are increased by 76.4, 76.5, and 38.0 times, respectively. This study provides a novel strategy to achieve high‐performance CuSbS2 photodetectors by suppressing the CuSb inversion defects in the Ag‐doped thin film. [ABSTRACT FROM AUTHOR]

Pulsed laser deposition (PLD) is a simple and extremely versatile technique to grow thin films and nanomaterials from a wide variety of materials. Compared to traditional fabrication methods, PLD is a clean physical vapour deposition approach that avoids complicated chemical reactions and by-products, achieving a precise stochiometric transfer of the target material onto the substrate and providing control over the film thickness. Halide perovskite materials have attracted extensive attention due to their excellent photoelectric and photovoltaic properties. In this paper, we present an overview of the fundamental and practical aspects of PLD. The properties and preparation methods of the halide perovskite materials are briefly discussed. Finally, we will elaborate on recent research on the preparation of perovskite solar cells by PLD, summarize the advantages and disadvantages of the PLD preparation, and prospect the all-vacuum PLD-grown solar cells in a full solar cell structure.

A cellulose conductor with biodegradability and renewability is a charming candidate to construct state-of-the-art electronic devices toward artificial intelligence and the Internet of things. However, the poor bonding between conductive materials and cellulose film, or high cost and complex processes for realizing the robustness (high stability of its conductivity) functions as the obvious defect, preventing the broad utilization of a cellulose conductor in advanced electronic devices. Herein, a solution-processable, robust, and scalable cellulose conductor with a high conductivity (15 Ω sq−1) and transmittance (85%) is developed via coating a blending starch and silver nanowires (AgNWs) on as-prepared cellulose film (namely, CSA film). In such a cellulose conductor, starch plays the natural "glue" to effectively fasten AgNWs on the cellulose film, which endows the desirable robustness to our CSA film. Despite robustness, more importantly, the CSA film features a promising recyclability via cellulose degradation to re-harvest the AgNWs, or by boiling CSA the film to independently separate the AgNWs and cellulose film, both of which are reused to produce a second CSA film with a conductivity of 18 Ω sq−1. The high performance allows the CSA film to construct advanced electronic devices, such as inorganic electroluminescent and organic light-emitting diode devices. Our starch-gluing–AgNW strategy paves the way for developing a robust yet green, recyclable cellulose conductor toward advanced electronic devices. [ABSTRACT FROM AUTHOR]

2D boron nitride shows great promise in the photoelectric device, deep UV emitter and field effect transistor with good thermal stability, high mechanical robustness and chemical inertness; nonetheless, its inherently low electrical conductivity and small pore size have severely hindered the electrochemical kinetics and lead to a poor rate capability. Herein, we design a novel porous 3D−B2N2 structure by assembling the orthorhombic B2N2 monolayer into t‐C24 lattice and assesse its feasibility as the anode material of sodium(SIBs)/potassium(PIBs) ion batteries. The ab initio molecular dynamics (AIMD) simulation, Born‐Huang criteria, phonon spectrum and cohesive energy calculations confirms that the resulting 3D−B2N2 possesses excellent mechanical, thermal and dynamical stability. Different from the pristine h‐B2N2, an improved electrical conductivity is observed for 3D−B2N2 with a small band gap of 0.66 eV. Moreover, the low mass density, unique porous structure and strong adsorption energy make the 3D−B2N2 an outstanding electrode material for SIBs/PIBs with high storage capacities of 599.90 (479.92) mA h/g, low averaged open circuit voltages of 0.13 (0.27) V, low diffusion barriers of 0.04 (0.008) eV, and small volume expansions of 0.96 % (2.63 %). All the encouraging findings reveal that the 3D−B2N2 anode deserves further experimental investigation for SIBs/PIBs. [ABSTRACT FROM AUTHOR]

Low reflectivity is of great significance to photoelectric devices, optical displays, solar cells, photocatalysis and other fields. In this paper, vanadium oxide is deposited on pattern SiO2 via atomic layer deposition and then annealed to characterize and analyze the anti-reflection effect. Scanning electron microscope (SEM) images indicate that the as-deposited VOx film has the advantages of uniformity and controllability. After annealing treatment, the VO2@pattern SiO2 has fewer crevices compared with VO2 on the accompanied planar SiO2 substrate. Raman results show that there is tiny homogeneous stress in the VO2 deposited on pattern SiO2, which dilutes the shrinkage behavior of the crystallization process. The optical reflection spectra indicate that the as-deposited VOx@pattern SiO2 has an anti-reflection effect due to the combined mechanism of the trapping effect and the effective medium theory. After annealing treatment, the weighted average reflectance diminished to 1.46% in the visible near-infrared wavelength range of 650–1355 nm, in which the absolute reflectance is less than 2%. Due to the multiple scattering effect caused by the tiny cracks generated through annealing, the anti-reflection effect of VO2@pattern SiO2 is superior to that of VOx@pattern SiO2. The ultra-low reflection frequency domain amounts to 705 nm, and the lowest absolute reflectance emerges at 1000 nm with an astonishing value of 0.86%. The prepared anti-reflective materials have significant application prospects in the field of intelligent optoelectronic devices due to the controllability of atomic layer deposition (ALD) and phase transition characteristics of VO2. [ABSTRACT FROM AUTHOR]

The present work described the enhanced photodegradation of the Congo Red (CR) dye under visible light irradiation. The co-doped ceria (Ce0.7La0.15Ca0.15O2−δ) was prepared by the colloidal solution combustion synthesis way using colloidal silica as a template. The characterization of the as-synthesized cerium oxide (CeO2, known as ceria) nanoparticles was assessed by diffraction, scanning electron microscopy, Raman spectroscopy, differential thermal analysis, thermοgravimetric analysis, ultraviolet (UV)–visible spectroscopy, and photoluminescence measurements. It revealed the cubic spinel structure with space group Fd-3 m (JCPDS card No. 34-0394), average size between 23 and 92 nm, and bandgap energy from 2.69 to 2.73 eV. The photodegradation of the CR dye under solar irradiation allowed studying the photocatalytic activities of the prepared ceria. After 180 min of light irradiation with the ceria 2 catalyst, CR absorbance was almost nil. The highest degradation rate ∼13.7 × 10−4 min−1 was recorded using co-doped ceria prepared with adding 1.0 ml of colloidal silica. This exciting activity can be attributed to the smallest particle size ∼23 nm, the smallest lattice parameter a = 5.4511 Å, and the catalyst's highest bandgap ∼2.73 eV. Based on the investigation, ceria 2 nanoparticles have many possible uses in wastewater cleaning agent. Ceria 2 catalysts might be ideal for photocatalyst materials, UV filters, and photoelectric devices. [ABSTRACT FROM AUTHOR]

Neuromorphic computing can efficiently handle data‐intensive tasks and address the redundant interaction required by von Neumann architectures. Synaptic devices are essential components for neuromorphic computation. 2D phosphorene, such as violet phosphorene, show great potential in optoelectronics due to their strong light‐matter interactions, while current research is mainly focused on synthesis and characterization, its application in photoelectric devices is vacant. Here, the authors combined violet phosphorene and molybdenum disulfide to demonstrate an optoelectronic synapse with a light‐to‐dark ratio of 106, benefiting from a significant threshold shift due to charge transfer and trapping in the heterostructure. Remarkable synaptic properties are demonstrated, including a dynamic range (DR) of > 60 dB, 128 (7‐bit) distinguishable conductance states, electro‐optical dependent plasticity, short‐term paired‐pulse facilitation, and long‐term potentiation/depression. Thanks to the excellent DR and multi‐states, high‐precision image classification with accuracies of 95.23% and 79.65% is achieved for the MNIST and complex Fashion‐MNIST datasets, which is close to the ideal device (95.47%, 79.95%). This work opens the way for the use of emerging phosphorene in optoelectronics and provides a new strategy for building synaptic devices for high‐precision neuromorphic computing. [ABSTRACT FROM AUTHOR]

Cs3Bi2I9 single crystals were prepared by evaporative crystallization method at the conditions of low temperature and atmospheric pressure, with temperature ranging from 60 °C to 90 °C and holding time ranging from 18 h to 30 h. The effects of temperature and holding time on the crystal structure and optical properties of Cs3Bi2I9 single crystals were investigated. The Cs3Bi2I9 single crystal film based on flexible substrate was prepared by mechanical exfoliation method and its electrical properties were studied. The results show that, for the best crystallinity target, the optimal parameters for the growth of Cs3Bi2I9 single crystals are the temperature of 60 °C and holding time of 26 h. The effects of temperature and holding time on the crystallinity, ultraviolet visible light absorbance, and photoluminescence properties of Cs3Bi2I9 single crystals are consistent. The flexible Cs3Bi2I9 single crystal film has obvious photoelectric properties, and shows excellent stability during work. Cs3Bi2I9 single crystal film has outstanding bending durability. After bending 100 times at the angle of 90°, the performances of Cs3Bi2I9 single crystal film still maintain at 84. 4% of the original performances. Lead-free perovskite Cs3Bi2I9 single crystal film has potential application prospects in flexible photoelectric sensor devices. [ABSTRACT FROM AUTHOR]

Wide bandgap β-Ga2O3 is an ideal candidate material with broad application prospects for power electronic components in the future. Aiming at the application requirements of β-Ga2O3 in space photoelectric devices, this work studies the influence of 40 MeV Si ion irradiation on the microstructure and optical properties of β-Ga2O3 epi-wafers. Raman spectroscopy analysis confirms that Si ion irradiation destroys the symmetric stretching mode of tetrahedral–octahedral chains in β-Ga2O3 epi-wafers, and the obtained experimental evidence of irradiation leads to the enhanced defect density of VO and VGa–VO from x-ray photoelectron spectroscopy. Combined with first-principles calculations, we conclude that most configurations of VO and VGa–VO are likely non-radiative, leading to quenching of experimental photoluminescence intensity. Unraveling optical degradation mechanism and predicting the optical application of β-Ga2O3 devices in the space environment by combining ground irradiation experiments with first-principles calculations still be one of the focuses of research in the future. [ABSTRACT FROM AUTHOR]

A co‐crystal FJU‐182 with a closed cage structure with photochromic phenomenon was formed using a tetraphenylene derivatives 4,4′,4′′,4′′′‐(anthracene‐9,10‐diylidenebis(methanediyl‐ylidene))tetrabenzoic acid self‐assembled with 1,3‐di(4‐pyridyl)propane in a solvent. It was also found that isomorphic crystals grown from different solvents exhibited different fluorescence. The electron paramagnetic resonance and X‐ray photoelectron spectroscopy data showed that the photochromic mechanism of crystal FJU‐182 was due to photoinduced electron transfer, while the different color change of crystals grown from different solvents was attributed to the size of solvent molecules. The I−V curves of the crystals FJU‐182 before and after illumination were also tested, and it was found that the conductivity of the crystals before the color change would be 3–8 times higher than the conductivity of the crystals after the color development. FJU‐182 provides a new case for electrochemical devices with photoelectric response. [ABSTRACT FROM AUTHOR]

[Display omitted] • The most recent achievements in the field of flexoelectric materials were reported. • Strain engineering strategies for modulating a flexoelectric response were discussed. • Strain-gradients allowed modulation of flexoelectric polarization and materials/devices properties. • Photodetectors based on flexoelectric materials and structures were discussed. • An overview of nonphotovoltaic and emerging applications of flexoelectric materials was provided. The research community is in permanent search of novel materials and exploitation of already elaborated phenomena to reveal yet unknown materials characteristics. Flexoelectricity has been in the spotlight lately because of its unique capacity to modulate electrical, optoelectronic, photovoltaic, and related properties and other characteristics of materials and devices. Nonetheless, potential limits on further progress of materials performance owing to incomplete knowledge about this effect are still not investigated to a sufficient extent. This review is focused on the most recent achievements on flexoelectric materials and on strain engineering strategies for modulating a strain gradient and flexoelectric response, with an emphasis on photovoltaic and related applications. Photodetectors based on flexoelectric materials and structures are discussed, and a brief overview of alternative (nonphotovoltaic) and emerging applications and challenges is provided. It is suggested that the most important materials for photovoltaic and related applications range from low-dimensional and thin-film ferroelectric semiconductors (which for example can be designed in an alternative way, according to the "barrier layer capacitor" principle) to conducting materials that are not restricted by the Shockley–Queisser limit. Such materials enable ultrafast charge carrier separation and enhanced photocurrents, photovoltages, and other photoelectric parameters of devices under strain gradients, compared with available analogs. [ABSTRACT FROM AUTHOR]

In the preparationand storage of grains, seed cleaning is a highly important phase. There has been extensive research regarding the cleaning and classifying grains. The grain seeds are usually contaminated right from the harvest with the seeds from other plants, with other materials (soil, plant residues, etc.) or even with their own degraded seeds. Since they are the same size and weight, they are difficult to be sorted mechanically. The degree of seed purity may be significantly increased by optical sorting after dedusting and mechanical sorting. The separation of seed mixtures by colour is achieved by using photoelectric devices, which, being sensitive to differences in the intensity of the reflected light beam, emit pulses that are used to carry out orders to separate the seeds of the wrong color. This article emphasizes the importance of introducing new or innovative methods in the seed separation process, especially optical systems. Various ways of sorting were discussed, the design of super interesting sorting systems. [ABSTRACT FROM AUTHOR]

Copyright of Momento: Revista de Física is the property of Universidad Nacional de Colombia, Departamento de Fisica and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The flexible transparent electrode is a crucial component of wearable photoelectric devices, and has a significant influence on the performance and development of wearable devices. Here, a phosphor/polyimide/polyurethane@silver composite nanofiber (NF) web electrode was fabricated by electrospinning and magnetron sputtering for wearable photoelectric devices. The electrode demonstrated a promising light management ability with converting ultraviolet light to visible light, high conductivity with sheet resistance of 22.1 Ω/square, and high transparency with transmittance of over 80%. Besides, the electrode possessed an excellent stretched capacity with tensile strain of over 100%, and tensile stability with the resistance increased by ∼75% after 500 stretching cycles at the tensile stain of 50%. As a result, a flexible perovskite solar cell (PSC) was assembled by using the NF web electrode, and possessed the power conversion efficiency of 3.47%, which is higher than that of PSCs based on electrodes without phosphor. Furthermore, the flexible PSCs exhibited promising mechanical stability under bending, and could serve as wearable devices. This work provides a feasible and promising method to prepare lightweight, stretchable, light management, and transparent electrodes for photoelectric devices, and may facilitate the development of wearable photoelectric devices. [ABSTRACT FROM AUTHOR]

Copyright of Atomic Energy Science & Technology is the property of Editorial Board of Atomic Energy Science & Technology and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 (LAO/STO) interface exhibits many emergent properties, such as high mobility, giant photoconductivity, the light-enhanced gating effect, etc., which are invaluable for basic research and potential applications. In this work, we report an unusual enhancement of persistent photoconductivity (PPC) by electrostatic gating (EG) at the LAO/STO interface. Under the influence of pre-EG processing, the 2DEG at the LAO/STO interface is triggered into a resistance state showing a more pronounced optical response and greatly enhanced PPC under light illumination (LI) at room temperature. These observations are found to be attributed to EG-induced interfacial polarization and the subsequent LI-accelerated depolarization at the interface. Based on these findings, a nonvolatile memory device made by this interface is proposed. Our work offers a new perspective for tuning the photoelectrical properties at the oxide interface, which is helpful for designing advanced photoelectric devices with high performance and multifunctionality. [ABSTRACT FROM AUTHOR]

The development of light‐absorbing organic molecules with calculated oscillator strength (f) is widely investigated to improve the performances of organic photoelectric devices such as organic photodiodes (OPDs). The oscillator strength estimates the probability of radiative electronic transition of a single molecule. However, most photoelectric devices are composed of organic thin films rather than a single organic molecule. Herein, the molecular volume is considered the critical parameter for the design of organic molecules. Three novel organic molecules, Et‐H, Me‐Me, and Me‐H, with similar oscillator strengths and different molecular volumes, are designed and synthesized as proof‐of‐concept. Their experimental absorption properties and organic photodiode performances are investigated. Me‐H, which has the smallest molecular volume and highest molecular packing density, shows the highest absorption coefficient in organic thin films and the best OPD performance with the highest external quantum efficiency. [ABSTRACT FROM AUTHOR]

Though microscopy is most often intended as a technique for providing qualitative assessment of cellular and subcellular properties, when coupled with other instruments such as wavelength selectors, lasers, photoelectric devices and computers, it can perform a wide variety of quantitative measurements, which are demanding in establishing relationships between the properties and structures of biological material in all their spatial and temporal complexities. These combinations of instruments are a powerful approach to improve non-destructive investigations of cellular and subcellular properties (both physical and chemical) at a macromolecular scale resolution. Since many subcellular compartments in living cells are characterized by structurally organized molecules, this review deals with three advanced microscopy techniques well-suited for these kind of investigations, i.e., microspectrophotometry (MSP), super-resolution localization microscopy (SRLM) and holotomographic microscopy (HTM). These techniques can achieve an insight view into the role intracellular molecular organizations such as photoreceptive and photosynthetic structures and lipid bodies play in many cellular processes as well as their biophysical properties. Microspectrophotometry uses a set-up based on the combination of a wide-field microscope and a polychromator, which allows the measurement of spectroscopic features such as absorption spectra. Super resolution localization microscopy combines dedicated optics and sophisticated software algorithms to overcome the diffraction limit of light and allow the visualization of subcellular structures and dynamics in greater detail with respect to conventional optical microscopy. Holotomographic microscopy combines holography and tomography techniques into a single microscopy set-up, and allows 3D reconstruction by means of the phase separation of biomolecule condensates. This review is organized in sections, which for each technique describe some general aspects, a peculiar theoretical aspect, a specific experimental configuration and examples of applications (fish and algae photoreceptors, single labeled proteins and endocellular aggregates of lipids). [ABSTRACT FROM AUTHOR]

A higher detection performance and stability are always pursued in the development of photoelectric or photo-electrochemical devices, critical for their further commercial application. Here, we report a CsPbBr3-based photodetector engineered from a multilayer Si/Ag islands/CsPbBr3/PMMA system, showing an evidently enhanced photosensitization and breaking the absorption edge of CsPbBr3. On the one hand, the photocurrent contribution from plasmonic hot-electron injection effectively extends the detection limit of our photodetectors much below the band edge of CsPbBr3, depending only on Schottky barrier. On the other hand, the surface plasmons on nanoscale silver islands can considerably improve the light harvesting ability of the CsPbBr3 layer, ascribed to the confinement of light in the adjacency of silver islands. Numerical simulations show the localized enhancement of light near silver islands, corresponding to the excitation of localized surface plasmon resonances. It shows a higher light intensity distribution inside the CsPbBr3 layer of the photodetector consisting of Si/Ag islands/CsPbBr3/PMMA with the photodetector with only Ag islands in accordance with their current–voltage(I–V) characteristics. Ultimately, our plasmonic CsPbBr3-based photodetector presents a >10-fold increase in the photocurrent and a doubling of the operating lifetime. Our work provides important insight into the realization of the performance and stability of optoelectronic devices based on plasmonics. [ABSTRACT FROM AUTHOR]

Photosynthesis occurs in high plants, and certain organisms show brilliant technology in converting solar light to chemical energy and producing carbohydrates from carbon dioxide (CO2). Mimicking the mechanism of natural photosynthesis is receiving wide-ranging attention for the development of novel materials capable of photo-to-electric, photo-to-chemical, and photocatalytic transformations. Porphyrin, possessing a similar highly conjugated core ring structure to chlorophyll and flexible physical and chemical properties, has become one of the most investigated photosensitizers. Chemical modification and self-assembly of molecules as well as constructing porphyrin-based metal (covalent) organic frameworks are often used to improve its solar light utilization and electron transfer rate. Especially porphyrin-based covalent organic frameworks (COFs) in which porphyrin molecules are connected by covalent bonds combine the structural advantages of organic frameworks with light-capturing properties of porphyrins and exhibit great potential in light-responsive materials. Porphyrin-based COFs are expected to have high solar light utilization, fast charge separation/transfer performance, excellent structural stability, and novel steric selectivity by special molecular design. In this paper, we reviewed the research progress of porphyrin-based COFs in the design, synthesis, properties, and applications. We focused on the intrinsic relationship between the structure and properties, especially the photoelectric conversion properties and charge transfer mechanism of porphyrin-based COFs, and tried to provide more valuable information for the design of advanced photosensitizers. The applications of porphyrin-based COFs in photocatalysis and phototherapy were emphasized based on their special structure design and light-to-electric (or light-to-heat) conversion control. [ABSTRACT FROM AUTHOR]

Macrocycles have attracted significant attention from academia due to their various applications in organic field-effect transistors, organic light-emitting diodes, organic photovoltaics, and dye-sensitized solar cells. Despite the existence of reports on the application of macrocycles in organic optoelectronic devices, these reports are mainly limited to analyzing the structure–property relationship of a particular type of macrocyclic structure, and a systematic discussion on the structure–property is still lacking. Herein, we conducted a comprehensive analysis of a series of macrocycle structures to identify the key factors that affect the structure–property relationship between macrocycles and their optoelectronic device properties, including energy level structure, structural stability, film-forming property, skeleton rigidity, inherent pore structure, spatial hindrance, exclusion of perturbing end-effects, macrocycle size-dependent effects, and fullerene-like charge transport characteristics. These macrocycles exhibit thin-film and single-crystal hole mobility up to 10 and 26.8 cm2 V−1 s−1, respectively, as well as a unique macrocyclization-induced emission enhancement property. A clear understanding of the structure–property relationship between macrocycles and optoelectronic device performance, as well as the creation of novel macrocycle structures such as organic nanogridarenes, may pave the way for high-performance organic optoelectronic devices. [ABSTRACT FROM AUTHOR]