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A study was conducted to develop double-gate elevated-channel thin-film transistor using polycrystalline silicon. Two-dimensional device simulations were carried out to analyze the electric field reduction mechanism in the structure. Experimental results indicated that the drain electric field reduction influenced the reduction of leakage current and elimination of the kink effect. Findings also showed that the capacitance and area needed for the storage capacitor depended on the pixel size.

Research was conducted to examine a lateral body contact that is characterized by a low-resistance polysilicon strap under silicon-on-insulator complementary metal oxide semiconductor field effect transistors (MOSFET). The bonding and etchback process was processed by the epitaxial growth of a heavily boron-doped etch stop and a thin undoped device layers. Results indicated that the resistance of the body was very important for SOI MOSFETs with lateral body contacts.

The performance of low-temperature processed polysilicon thin film transistors is examined. The device is fabricated on polished active polysilicon films. Polishing after annealing is found to significantly enhance performance, while polishing before annealing had no significant influence. Such a touch polish process would be effective in smoothing the surface of the active-layer film, thereby enhancing the poly-Si/SiO2 interface.

A lateral carrier domain magnetometer built on silicon-on-insulator (SOI) technology overcomes the deficiencies in the vertical carrier domain magnetometer and achieves a relative sensitivity of 12.5%/tesla. MEDICI simulation verifies the formation of a carrier domain and enables observation of the effect of several geometries. A 6-mask process fabricates the device on bonded etchback SOI wafer, and a specially made magnetic chuck probes it. The process also measures the performance of the bipolar transistors by floating the emitter of the opposite device within the same NPNP structure.

The body-grounded non fully depleted (NFD) SOI MOSFET's with low-barrier body-contact technology have large output resistance and very low flicker noise compared to that of fully depleted (FD) SOI MOSFET's. The subthreshold characteristics and the variation of minimal threshold voltage of NFD SOI MOSFET are also better compared to that of FD SOI MOSFET. The performance of the NFD SOI MOSFET in the analog and mixed signal circuits is high compared to the performance of FD SOI MOSFET.

A quasi-two-dimensional model is used to study threshold voltage of a deep-submicrometer range effective channel length fully depleted silicon-on-insulator (FDSOI) MOSFET. Changes in the shift in threshold voltage is similar to that in the bulk but the roll-off in threshold voltage of FDSOI is less compared to bulk for the same effective channel length. The model gives accurate results as it does not assume charge partitioning and constant surface potential. The threshold voltage varies with the silicon film thickness.

Chemo-mechanical polishing (CMP) and selective epitaxial growth (SEG) processes enable the development of single-polysilicon bipolar transistors with low sidewall leakage current and surface defects. The SEG/CMP process combination incorporates a pedestal structure that reduces the extrinsic-base collector capacitance and increases the cut-off frequency from 16 GHz to 22 GHz. The CMP/SEG process combination also causes the (100) orientation of the sidewalls, resulting in a decrease in leakage current.

A one-dimensional physical model for parasitic lateral bipolar transistor gain in a full depleted n-channel silicon on insulator (SOI) MOSFET is constructed and shown to be feasible by experiments. The transistor gain is inversely proportional to hole concentration and is influenced by SOI layer thickness, gate and drain voltages and doping concentration. Gummel plots of the bipolar reveal a 0.5 ideality factor for the hole current.

The use of local interconnection technology to thwart leakage currents in the diode is studied. Chemical vapor deposition tungsten embedded on polysilicon is applied in local interconnection technology to fabricate metal oxide semiconductors 0.25 micrometers thick. This fabrication technique has low resistivity, discourages diffusion and separation of dopants which makes it a logical choice for a gate shunt and local interconnection material. High doping concentrations may lead to leakage currents in the diode.

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Summary: In this paper, we explore a combination of the reciprocal absorbing boundary condition with perfectly matched discrete layers for the time‐domain analysis of wave motion in the full plane. Coupling of these absorbing boundaries leads to solutions for out‐of‐plane as well as in‐plane excitations of the full plane. Together with numerical transient simulations, harmonic analysis is also carried out for the purpose of verifying the results by comparing with available exact frequency‐domain solutions. The proposed combination is investigated through several numerical examples, which demonstrate its accuracy and efficiency. [ABSTRACT FROM AUTHOR]

The lateral maximum electric field is lower in the Quasi silicon-on-insulator (QSOI) device as compared to bulk device. The substate current generated by impact ionization near the SOI drain is lower in the QSOI devices. The low substrate current is mainly caused by the low lateral maximum electric field. Thus the SOI metal oxide semiconductor field effect transistors (MOSFET) have higher breakdown voltages than the bulk devices,enhancing their reliability.

Long-chain chitooligosaccharides are fungal microbe-associated molecular patterns ( MAMPs) that are recognized by LYSIN MOTIF RECEPTOR KINASE5 ( LYK5), inducing the formation of a complex with CHITIN ELICITOR RECEPTOR KINASE1 ( CERK1). Formation of this complex leads to activation of the CERK1 intracellular kinase domain and induction of plant innate immunity in Arabidopsis., We found that addition of chitooctaose induced LYK5 protein accumulation as a result of de novo gene expression and the inhibition of LYK5 protein degradation. Screening the putative E3 ligases for interaction with LYK5 identified PLANT U-BOX13 ( PUB13), which complexed with LYK5, but this complex dissociated upon addition of chitooctaose. Consistent with these results, LYK5 protein abundance was higher in pub13 mutants compared with the wild type without chitooctaose treatment, while similar abundance was detected with the addition of chitooctaose., The pub13 mutants showed hypersensitivity to chitooctaose-induced rapid responses, such as the production of reactive oxygen species ( ROS) and mitogen-activated protein ( MAP) kinase phosphorylation, but exhibited normal responses to subsequent long-term chitooctaose treatment, such as gene expression and callose deposition. In addition, PUB13 could ubiquitinate the LYK5 kinase domain in vitro., Taken together, our results suggest an important regulatory function for the turnover of LYK5 mediated by the E3 ligase PUB13. [ABSTRACT FROM AUTHOR]

N-trans -cinnamoyltyramine (NTCT) has been identified from an allelopathic Vietnamese rice accession OM 5930. This study employed bioassays to analyze NTCT's effects on shoot and root growth of multiple test and weed species. NTCT demonstrated potent inhibitory effects on cress, lettuce, canola, palmer amaranth, timothy, barnyardgrass, red sprangletop, and weedy rice, with increasing concentrations leading to substantial reductions in growth in all species. Linear regression analysis of dose response curves revealed ED 50 values for NTCT, providing critical insights into the concentration required for 50% growth inhibition in each species. They revealed high sensitivity of the test species cress and lettuce, intermediate sensitivities of barnyardgrass, red sprangletop, timothy, and amaranth, and comparatively lower sensitivity of two weedy rice accessions. The findings underscore NTCT's efficacy in suppressing the growth of a wide range of weeds, including both grasses and broadleaf species. As such, NTCT may hold promise as a tool for sustainable weed management, particularly in addressing herbicide-resistant weeds in diverse ecological settings., Competing Interests: No potential conflict of interest was reported by the author(s)., (© 2024 The Author(s). Plant‐Environment Interactions published by New Phytologist Foundation and John Wiley & Sons Ltd.)

The purpose of this study is to evaluate the performance of multidetector computed tomography (MDCT) in diagnosing arterioportal fistulas (APF) in high-grade liver injury. A retrospective analysis of catheter-based hepatic angiograms performed for major penetrating and blunt liver injuries identified 11 patients with APFs. Using the trauma registry, two additional demographically matched groups with and without liver injury were formed. A randomized qualitative consensus review of 33 MDCTs was performed by three trauma radiologists for the following MDCT findings of APF: transient hepatic parenchymal attenuation differences (THPAD), early increased attenuation of a peripheral or central portal vein compared with the main portal vein, and the "double-barrel" or "rail tract" signs. THPAD was the most sensitive finding and also had a high specificity for diagnosing APF. Both the early increased attenuation of a peripheral or central portal vein compared with the main portal vein and the double-barrel or rail tract signs had a100% specificity and a sensitivity of 64% and 36%, respectively. Measurement of differences in attenuation values between the APF and the contralateral central portal vein was most sensitive and specific in diagnosing APF. Traumatic APF of the liver can be optimally diagnosed with arterial phase imaging of solid organ using MDCT.