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The Internet of Things (IoT) is pivotal in transforming the way we live and interact with our surroundings. To cope with the advancement in technologies, it is vital to acquire accuracy with the speed. A phase frequency detector (PFD) is a critical device to regulate and provide accurate frequency in IoT devices. Designing a PFD poses challenges in achieving precise phase detection, minimising dead zones, optimising power consumption, and ensuring robust performance across various operational frequencies, necessitating complex engineering and innovative solutions. This study delves into optimising a PFD circuit, designed using 90 nm standard CMOS technology, aiming to achieve superior operational frequencies. An efficient and high-frequency PFD design is crafted and analysed using cadence virtuoso. The study focused on investigating the impact of optimising PFD design. With the optimised PFD, an operational frequency of 5 GHz has been achieved, along with a power consumption of only 29 µW. The dead zone of the PFD was only 25 ps. [ABSTRACT FROM AUTHOR]

CuCl2 solutions of various molarities were used to treat CdSe thin films produced by RF magnetron sputtering. In-depth investigation on the impacts of this treatment on CdSe thin films were studied. The structural investigation revealed that all as-grown films exhibited the hexagonal phase peak at the (101) plane. The crystalline and grain sizes increased with CuCl2 treatment, reaching 114 nm for 0.1 M CuCl2-treated CdSe thin film. A granule-like morphology was seen on the treated films. Opto-electric study revealed that CuCl2 treatment improved CdSe film properties and tailored structural restrictions. The 0.30 M CuCl2 treatment was shown to be an important process parameter for the CdSe thin films, indicating its potential as a photovoltaic material. [ABSTRACT FROM AUTHOR]

This paper explains the development of a culturally inclusive ubiquitousM- Learning platform("Mobile Academy") with an AI-based adaptive user interface. The rationale and need for this research and development are justified by the continuing widespread adoption of the Internet and Internet enabled devices, especially smartphones. The M-learning platform was designed from the onset for the global traveller. The characteristics and limitations of the application are also discussed. The Mobile Academy, proof of concept prototype, was created to facilitate teaching and learning on the move or in environments where the use of a desktop computer is inconvenient or simply impossible. The platform's primary objective was cross-cultural usability through the use of a combination of AI and plasticity of user interface design techniques. The usability evaluation plan was comprehensive and the results obtained were studied in detail. This also included consideration of the results of the SVM(Support VectorMachine) classifiers' performance and cross-device evaluation. The AI-based adaptive interface prototype has been tested and evaluated to show itsmerits and capabilities in terms of its usability, inclusivity and effectiveness of the interface. From the results, itwas concluded that such a culture independent application was also affordable. [ABSTRACT FROM AUTHOR]

Millimeter Wave (mm-wave) technology is a prerequisite to ensure ubiquitous wireless communication, given the rapid growth of the Internet of Things (IoT) infrastructure that integrates emerging technologies such as virtual reality (VR), artificial intelligence (AI), etc. However, to ensure the future growth and acceptance of this technology, a highly efficient mm-wave compatible transceiver hardware is essential to be developed. A low noise amplifier (LNA) is one of the modules that directly influences the performance of an IoT transceiver. Numerous approaches have thus far been deployed in LNA design, such as differential cascode topology, active inductor, embedded input balun, transformer-based feedback, current reuse, stacked structure, and body biasing, to standardize various parameters e.g. die area, gain, noise figure, linearity, and power efficiency. Although complementary metal–oxide–semiconductor (CMOS) technology-based current LNA architectures in the mm-wave range suffer from substrate losses and device parasitic, it is regarded as a competitive solution for THz communication due to its inherent benefits of low-cost integrity, which promotes CMOS LNA design as an emerging research topic. This review presents several CMOS LNA architectures and perceives the adjustments of circuit topologies to ratify LNA structures in mm-wave applications. Furthermore, various state-of-the-art LNA design features are compared to envision CMOS LNA design directions and identify apposite circuit techniques suitable for the imminent 6G communication protocol. Therefore, this review will serve as a comparative study and reference for the future LNA design for the mm-wave sensor transceiver applications. [ABSTRACT FROM AUTHOR]