Search

By developing 6-amidino-2-naphthyl 4-guanidinobenzoate (I, FUT-175) as a basic structure, its various derivatives were synthesized and their inhibitory activities on trypsin, plasmin, kallikrein, thrombin, C1r and C1s as well as on complement-mediated hemolysis were examined. The protective effect of these compounds on complement-mediated Forssman shock was also examined in guinea pigs. 6-Amidino-2-naphthyl 4-[(4,5-dihydro-1H-imidazol-2-yl)amino]-benzoate (41, FUT-187) was found to be a suitable compound for oral administration with anti-complement activity superior to that of compound I.

To clarify whether monoaminergic inputs to the subfornical organ (SFO) area participate in fluid regulatory systems, we examined the effects of body fluid depletion on monoamine turnover in the region of the SFO using microdialysis techniques in rats. An iso-osmotic reduction of fluid volume following subcutaneous treatment with polyethylene glycol (PEG) significantly increased dopamine (DA), 3,4-dihydroxyphenylacetic acid (DOPAC), and 5-hydroxyindoleacetic acid (5-HIAA) concentrations in the SFO area. 5-hydroxytryptamine (5-HT) in the SFO area could be detected after the PEG treatment, while 5-HT was undetectable before the treatment. The data imply that both dopaminergic and serotonergic systems in the SFO area may be involved in controlling body fluid balance.

I would like to trace the evolution of the major problems or questions since the 1950’s by showing several diagrams (Fig. 1a-e) based on my own recollections. As for the coordinates of the diagrams, the latitude towards North indicates the magnitude of surprise and that towards the South indicated is the deepening of our knowledge. Of course such a visual approach is incomplete and is full of personal prejudices, and many important subjects and considerations may be missing.I will not go into detail of the interpretation of the diagram. But from the series of the diagram we may see that unification and diversification of the questions alternate as one of our co-panelists, Freeman Dyson, pointed out in one of his inspiring books.In the 1970’s to the 1980’s we had good hopes that GUT would develop and in its evidence mono-poles and Proton-decay’s would be discovered and that proposed candidates of the dark matter may also be discovered from fairly reasonable particles to much more exotic particles.

Although the authors recently reported that nafamostat, a clinically used serine protease inhibitor, was mainly hydrolysed by carboxylesterase in human liver microsomes, the involvement of human liver cytosol has not been elucidated. The current study examined the in vitro metabolism of nafamostat with human liver cytosols. Kinetic analysis indicated that the Vmax and Km values in the liver cytosols were 9.82 nmolmin(-1) mg(-1) protein and 197 microM for a liver sample HL-1, and 15.1 nmolmin(-1) mg(-1) protein and 157 microM for HL-2, respectively. The Vmax/Km values in both cytosols were at least threefold higher than those in the corresponding microsomes. The liver cytosolic activity for nafamostat hydrolysis was inhibited by phenylmethylsulfonyl fluoride (PMSF) (43% inhibition at 100 microM), whereas diisopropyl fluorophosphate (DFP) and bis(p-nitrophenyl)phosphate (BNPP) failed to inhibit the activity. Furthermore, the hydrolytic activity was also reduced by palmitoyl-CoA (67% inhibition at 100 microM) but not by acetyl-CoA. Effects of PMSF, DFP and BNPP on cytosolic palmitoyl-CoA hydrolytic activity were comparable with those of the cytosolic nafamostat hydrolytic activity. In addition, the palmitoyl-CoA hydrolytic activity was competitively inhibited by nafamostat with the apparent Ki value of 164 microM for the liver cytosol from HL-2. These results suggest that an isoform of long-chain acyl-CoA hydrolase may be responsible for the nafamostat hydrolysis in human liver cytosol.

Introduction High mobility channel materials are extensively explored to replace strained-Si in MOSFET devices to reduce power consumption by lowering supply voltages, V dd, without degrading circuit performance. Among the various high mobility channel materials, compressively strained-Ge[1-4] is recognized as the most promising option for p-channel FETs due to its significantly high hole-mobility and compatibility with Si-CMOS process. In this paper, Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record-high hole mobility (μ eff = 1922 cm2/Vs) and record-low off-current (2.7x10-9A/μm at V d = -0.5V) were achieved among scaled (sub-100nm L g) Ge MOSFET for the device with the L gof 45nm. Device fabrication Uniaxially strained-Ge nanowire channel was formed by the two-step Ge condensation technique, which induced uniaxial stress along the channel direction[3]. As a gate insulator, 5 nm thick Al2O3 was grown by using ALD. Partly, in order to improve the interface characteristics and hole mobility, MMT-plasma oxidized GeOx / 3.2 nm-Al2O3 stacked gate insulator were adopted[4,5]. Ni(Si)Ge-metal S/D structures were formed by SALICIDE-like process. Detailed device fabrication process was shown in [4]. The Relationship between the wire width, W wire and strain applied to the channel was measured by an immersion high-NA Raman spectroscopy[6] and a NBD measurement. The dependence of strain along the channel direction, ε xx on wire width is shown in Fig.1. Extremely high (-3.8%) strain was evaluated for W wire= 20 nm device, which was almost identical with the value obtained from the NBD measurement. Moreover, extremely high (over -3.9%) strain, which is almost identical with the misfit strain between Ge and Si, was evaluated by strained-Ge nanowire channel formed by improved two-step Ge condensation technique[4]. Mobility enhancement by uniaxial compressive strain In order to estimate the mobility enhancement factors in uniaxially strained-Ge and Si1-x Ge x inversion channels, Poisson-Schrodinger self-consistent solver[7] was used to calculate the effective mass (m eff) values. Here, 6x6 k*p method was used. Figure 2 shows the calculated Ge concentration dependence of inversion layer effective hole mass along [110] channel direction. For Ge (x=1), m eff was calculated to be 0.055m 0 at fully strained condition, i.e., the lattice constant is identical with that of Si in [110] directions. Considering the ratio of m eff, 12 times higher mobility that for unstrained Si can be expected on uniaxially strained-Ge. At these highly strained condition, orientation dependence among (001), (112) and (110) is diminished due to the band deformation. Device characterization Hole mobility was extracted by a split CV method for long-channel and multi-wire devices. Figure 3(a) shows hole-mobility of the fabricated multi-wire MOSFETs. The W wire = 40nm device, which has 95% Ge channel and GeOx / Al2O3 stacked gate insulator, showed a peak hole mobility of 1922 cm2/Vs at N s = 1.7x1012cm-2, which exceeds that of -3.8% strained-Ge nanowire MOSFET with Al2O3 gate stack. Moreover, the obtained mobility at N s = 5x1012cm-2 is corresponding to 5.8 times of the counterpart of a state-of-the-art strained-Si pMOSFETs[1]. Figure 3(b) shows that mobility values for fixed N s increased with Ge concentration, x. The tendency is consistent with the m eff calculation in Fig.2. Figure 4 shows I d-V g characteristics of fabricated strained-Ge nanowire pMOSFET with GeOx / Al2O3 stacked gate insulator. Ion/Ioff ~ 105 has also been attained. And a minimum drain leakage current (I d,off), as low as current 2.7x10-9A/μm at V d = -0.5V, were achieved with L g = 45 nm. This I d,off value is the lowest minimum drain leakage among the previously reported sub-100nm L g strained-Ge devices even though that has a shortest L g. Conclusion s Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ eff = 1922 cm2/Vs) and record-low off-current (2.7x10-9A/μm at V d = -0.5V) were achieved among scaled (sub-100nm L g) Ge MOSFET for the device with the L gof 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS. References [1] R. Pillarisetty et al., IEDM p.150 (2010). [2] W. Chern et al., IEDM p.387 (2012). [3] K. Ikeda et al., VLSI Symp. p.165 (2012). [4] K. Ikeda et al., VLSI Symp. p.T31 (2013). [5] Y. Kamimuta et al., ISTDM. p.34 (2012). [6] D. Kosemura et al., SSDM p.931(2011). [7] S. Birner et al., IEEE TED 54(2007)2137. Acknowledgements This work was granted by JSPS through FIRST Program initiated by the Council for Science and Technology Policy (CSTP).

The electron mobility in HfO2/In0.53Ga0.47As n-type metal–insulator–semiconductor field-effect transistors (nMISFETs) has been found to be significantly enhanced in the sub-1.0 nm equivalent oxide thickness (EOT) regime by annealing before the atomic layer deposition (ALD) of the HfO2 gate dielectric. XPS measurements revealed that the predeposition annealing increased the amount of GaOx and reduced the amount of AsOx at the MIS interface, which is considered to reduce the trapped charge density and enhance the mobility, especially in the low-surface-carrier-density region.

Introduction High mobility channel materials are extensively investigated to replace strained-Si in MOSFET devices to reduce power consumption by lowering supply voltages, V dd, without degrading circuit performance. Among the various high mobility channel materials, strained-Ge[1-4] is recognized as the most promising option for p-channel FETs due to its significantly high hole-mobility and compatibility with Si-CMOS process. This paper presents metal S/D nanowire pFETs having a high-mobility strained Ge channel formed by doping-free processes for channels and S/D. The large compressive strain as high as -3.9% resulted in a record high hole mobility (μ eff = 1992 cm2/Vs @ N s = 1.7x1012 cm-2) and a low contact resistivity (ρ c ~ 3.8x10-8 Ω cm2). Device fabrication Uniaxially strained-Ge nanowire channel was formed by the two-step Ge condensation technique, which induced uniaxial stress along the channel direction. As a gate insulator, GeOx interlayer and 3.2 nm- Al2O3 were grown by using MMT-plasma[4,5] and ALD, respectively. NiGe-metal S/D structures were formed by SALICIDE-like process on the unintentionally doped Ge nanowire. Detailed device fabrication process was shown in [3,4]. Figure 1(a) shows a XTEM of the narrowest channel with a wire width (W wire) of 15 nm. The Relationship between the W wire and strain applied to the channel was measured by a Raman spectroscopy. The dependence of strain along the channel direction ε xx on W wire is shown in Fig. 1(b). Extremely high (over -3.9%) strain, which is almost identical with the misfit strain between Ge and Si, was evaluated for sub W wire=40 nm devices. Device characterization Hole mobility was extracted by a split CV method for long-channel and multi-wire devices. Figure 2(a) shows hole-mobility of the fabricated multi-wire MOSFETs. The W wire = 40nm device, which has 95% Ge channel, showed a peak hole mobility of 1922 cm2/Vs at N s = 1.7x1012cm-2, which exceeds that of -3.8% strained-Ge nanowire MOSFET with Al2O3 gate stack[3]. Moreover, the obtained mobility at N s = 5x1012cm-2 is corresponding to 5.8 times of the counterpart of a state-of-the-art strained-Si pMOSFETs[1]. Ion / Ioff ~ 105 has also been attained for the strained-Ge nanowire pMOSFET with a gate length (Lg ) of 40 nm (Fig. 2(b)). A metal S/D MOSFET is an attractive candidate because of its low extension sheet resistance properties without a heavy doping in extension regions. However, parasitic resistance (R para) which is dominated by contact resistance (R c) between the extension metal and the inversion layer in this device, have been still an issue because of the decreasing contact area. Here, we demonstrate low R c characteristic due to low Schottky barrier height (SBH) for NiGe/ strained-Ge interface. The W wire dependence of parasitic resistance (R SD) were evaluated as shown in Fig. 3. Reduced R SD as low as 490 Ωμm for W wire = 54 nm device is achieved by using undoped Ge nanowire formed by two-step Ge condensation. The specific contact resistivity, ρ c of NiGe / strained-Ge interface was estimated by using previously proposed model[3]. Extremely low ρ c, that is as low as ~ 3.8x10-8 Ω cm2 has been achieved in spite of doping-free Schottky contact presumably due to the strong Fermi-level pinning to the valence band edge of the strained-Ge and reduction of SBH at Ni(Si)Ge/(Si)Ge interface by rising valence subband top energy for higher Ge concentration and strain. Conclusion Record high hole mobility (μ eff = 1922 cm2/Vs) and extremely low S/D contact resistivity (ρ c ~ 3.8x10-8 Ω cm2) were achieved for the highly strained-Ge nanowire pMOSFET. These results indicate that strained-Ge channels have a potential to serve as pFET channel of ultimately-scaled future CMOS. References [1] R. Pillarisetty et al., IEDM p.150 (2010). [2] W. Chern et al., IEDM p.387 (2012). [3] K. Ikeda et al., VLSI Symp. p.165 (2012). [4] K. Ikeda et al., VLSI Symp. p.T31 (2013). [5] Y. Kamimuta et al., ISTDM. p.34(2012). Acknowledgements This work was granted by JSPS through FIRST Program initiated by the Council for Science and Technology Policy (CSTP).

Ga2O3 film growth on InGaAs substrates was investigated using an atomic layer deposition system with trimethylgallium (TMGa) and H2O as precursors. Self-limiting growth of Ga2O3 was confirmed on InGaAs substrates as well as on Si and GaAs. During initial formation of the Ga2O3 film on an InGaAs substrate, the selective self-cleaning effect of TMGa on AsOx and GaOx was observed. The insertion of ultrathin Ga2O3 into an Al2O3/InGaAs gate stack as an interfacial passivation layer proved quite effective to reduce Dit around the midgap. The Al2O3/InGaAs MISFET performance also revealed improvement of the effective mobility for both NH4OH- and (NH4)2S-treated devices.

TO-193 (TachoComb) is a new fibrin adhesive agent that consists of a collagen sheet coated with fibrin glue. We compared the hemostatic effect of TO-193 in several experimental models with Beriplast P as a fibrin adhesive agent, Avitene and Novacol as a microfibrillar collagen hemostat, and a sponge-like collagen sheet as the constitutional parts of TO-193. In the in vitro bleeding model in which blood leaks out through cotton cloth, the pressure of TO-193 when blood leakage was observed was higher than those of Beriplast P, Avitene, Novacol and the collagen sheet, indicating that TO-193 possessed a strong adhesive effect on the bleeding surface. On the kidney resection surface, TO-193 showed a more potent adhesive effect than those of Beriplast P and the collagen sheet, suggesting that TO-193 has a potent hemostatic effect. In the liver resection, TO-193 significantly reduced the bleeding volume compared with that of Novacol in normal rats. Furthermore, the bleeding volume of TO-193 was about half that of Beriplast P and equivalent to that of Novacol even in anticoagulant-treated rats. From these data, it is expected that TO-193 would be a valuable hemostatic agent for clinical use since TO-193 possesses a potent adhesive ability on the bleeding resection surface and would certainly stop bleeding in both patients with normal coagulation and those with a low blood coagulation condition.

We devised a method for evaluating polymorphonuclear leukocyte (PMN) infiltration in vivo employing an air bleb technique combined with measurement of myeloperoxidase (MPO) activity, and the effects of some anti-platelet agents were evaluated. KBT-3022 (ethyl 2-[4,5-bis (4-methoxyphenyl)thiazol-2-yl] pyrrol-1-ylacet ate) and cilostazol inhibited the increase in MPO activity in the connective tissue around the air bleb induced by leukotriene B4 (LTB4) and formyl-methionyl-leucyl-phenylalanine (fMLP). Indomethacin inhibited only the fMLP-induced increase in MPO activity, but ticlopidine hydrochloride and acetylsalicylic acid had no effect. Histologic observation confirmed the inhibition of PMN infiltration by KBT-3022. These results indicate that KBT-3022 may be a potent inhibitor of both LTB4- and fMLP-induced infiltration of PMNs.

Inhibitory activities of FUT-187 on trypsin-like serine proteases were compared using camostat mesilate (camostat), and 4-(4-guanidino benzoyloxy)-phenyl acetic acid methanesulfonate (GBPA) known as an active metabolite of camostat in the blood. Ki values of FUT-187 on the competitive inhibition mechanism were 0.097 microM for trypsin, 0.029 microM for pancreatic kallikrein, 0.61 microM for plasma kallikrein, 0.57 microM for plasmin, 2.5 microM for thrombin, 20.4 microM for factor Xa and 6.4 microM for C1r. However, FUT-187 acted as a noncompetitive inhibitor for factor XIIa and an uncompetitive inhibitor for C1s, and Ki values for these proteases were 0.021 and 0.18 microM, respectively. Ki values of camostat for these proteases were in the range of 0.037 to 96.4 microM, and those of GBPA for the above proteases except trypsin and plasma kallikrein were higher than those of FUT-187. The inhibitory activity of FUT-187 on trypsin was not reduced by the addition of the serum at 10%, whereas, that of GBPA was reduced (4.3 fold) in terms of IC50 values. The concentration of FUT-187 required to double APTT (activated partial thromboplastin time) was 1.09 microM, while GBPA, by concentrations up to 1 mM failed to double APTT. The kinin formation by glandular kallikrein in the rat plasma was inhibited by FUT-187 with IC50 value of 0.024 microM, while camostat revealed no inhibition by concentrations up to 1 microM. The complement-mediated hemolyses in the classical and alternative pathways were also inhibited by FUT-187 with IC50 values of 0.17 and 3.5 microM, respectively, the corresponding values for camostat being 350 and 150 microM, respectively. It is concluded that FUT-187 is a potent and selective inhibitor of trypsin-like serine proteases, and its inhibitory activities are stronger than those of camostat on glandular kallikrein, factor XIIa and C1s in complement pathway.

on such Ge-rich non-planar channels. 9) In this letter, we demonstrate a fabrication process and high hole mobility characteristic of uniaxially strained SiGe-on-insulator (SGOI) channel tri-gate MOSFET with Ge fraction x of 0.65 formed by two-step Ge condensation. The current drive of a uniaxially strained SGOI channel tri-gate MOSFET, which has a nickel-germanosilicide (NiSiGe) metal S/D structure with gate length (Lg) of 50 nm and wire width (Wwire) of 25 nm, was also investigated and compared with that of SOI channel tri-gate MOSFETs. Sufficiently high mobility and higher current drive were obtained in the SGOI channel tri-gate FETs than those of the SOI channel tri-gate MOSFET, as well as high immunity to the short-channel effects.

not Available.

Antigenicity study of 6-amidino-2-naphthyl 4-[(4, 5-dihydro-1H-imidazol-2-yl) amino] benzoate dimethanesulfonate (FUT-187), a new protease inhibitor, was investigated in guinea pigs and mice and the following results were obtained. 1. In guinea pigs immunized with FUT-187 plus adjuvant by intramuscular / subcutaneous routes, ASA, ACA and PCA reactions challenged intraveneously or intradermally were positive. 2. In guinea pigs immunized with FUT-187 plus adjuvant by intramuscular / subcutaneous routes, ASA and PCA reactions challenged orally were negative. 3. In guinea pigs immunized with FUT-187 by the oral route, ASA, ACA and PCA reactions were negative. 4. In guinea pigs immunized with IABA and AN plus adjuvant by intramuscular / subcutaneous routes, ASA and PCA reactions were negative. 5. 48-hr PCA reactions were elicited with sera obtained from BALB / c and C3H / He mice immunized with FUT-187 plus adjuvant by the intraperitoneal route, responses were negative. 6. From the results of hapten inhibition tests using anti-FUT-187 guinea pig serum, it is suggested that the antigenicity of FUT-187 is attributable to the its benzoic acid.

The diagram (Fig. 1) qualitatively exhibits how several important observations will have to be undertaken. Here, I would like to, at least, raise the question or discuss the problem referring; to “Man in Space”.

An improvement of Fourier synthesis optics for hard x-ray imaging is described, and the basic performance of the new optics is confirmed through numerical simulations. The original concept of the Fourier synthesis imager utilizes nonposition-sensitive hard x-ray detectors coupled to individual bigrid modulation collimators. The improved concept employs a one-dimensional position-sensitive detector (such as a CdTe strip detector) instead of the second grid layer of each bigrid modulation collimator. This improves the imaging performance in several respects over the original design. One performance improvement is a two-fold increase in the average transmission, from 1/4 to 1/2. The second merit is that both the sine and cosine components can be derived from a single grid-detector module, and hence the number of imaging modules can be halved. Furthermore, it provides information along the depth direction simultaneously. This in turn enables a three-dimensional imaging hard x-ray microscope for medical diagnostics, incorporating radioactive tracers. A conceptual design of such a microscope is presented, designed to provide a field of view of 4 mm and a spatial resolution of 400 microm.

Two of Japan's government agencies are set to be merged in an attempt to raise the country's scientific standards. But unless a ‘bottom-up’ approach to science is adopted, the culture of basic research may be damaged.

Effect of nafamostat mesilate (FUT-175), a serine protease inhibitor, having anti-inflammatory effects was studied on superoxide (O2-) production in rat polymorphonuclear leucocytes (PMN) and compared with those of other serine protease inhibitors and typical anti-inflammatory agents. 1) O2- productions in rat PMN stimulated with concanavalin A (Con A) and cytochalasin B (Cyt B) were too weak to observe. With NADH, however, strong O2- production was induced by Con A and Cyt B. 2) FUT-175 at 10(-6) and 10(-5) M inhibited O2- production in rat PMN induced by Con A and Cyt B with NADH in a concentration-dependent manner. 3) The serine protease inhibitor L-tosylamido-2-phenylethyl-chloromethyl ketone (TPCK) and soybean trypsin inhibitor (SBTI) inhibited O2- production at 10(-5) M and 10(-4) M, respectively, while aprotinin, chymostatin and leupeptin did not. 4) Neither indomethacin nor dexamethasone, typical anti-inflammatory agents, inhibited O2- production. Mepacrine, a phospholipase A2 inhibitor, strongly inhibited it. 5) O2- production in PMN prepared from the rat administered FUT-175, 200 mg/kg, p.o., was significantly decreased in comparison with that of the control rat. 6) FUT-175 had no effect on O2- production by hypoxanthine-xanthine oxidase. These results showed FUT-175 had a strong inhibitory effect on O2- production in rat PMN which other typical anti-inflammatory agents did not have.

Japan's two X-ray astronomy satellites, HAKUCHO and TENMA, have been actively in operation leading to deeper understandings of the neutron star physics. Other satellite and balloon projects have been performed under international collaborators.

Stable hydraulic pressure pulse series can be generated by an appropriate valve operation at a pipe end. The pressure of the pulse series is amplified by a booster piston, consequently the pressure pulse series with a pressure higher than 400 MPa is obtained for a frequency of 15.2 Hz. By a pressure intensifier applying the amplified pressure pulse series, a continuous oil flow with an amplified pressure higher than 300 MPa is obtained for a source pressure of 6.6 MPa, Using this pressure pulse series generator as a lateral pressure cutting device of a ductile material, an aluminum column of 20 mm in diameter with a notch is cut after 580 cycles of the repeating pressure of 204 MPa. Hydraulic pressure pulse series generator discussed in this paper is practical enough to be used as a pressure intensifier and a lateral pressure cutting device.

This year x‐ray astronomy celebrates its silver anniversary. It was in 1962 that Riccardo Giacconi, Herbert Gursky, Frank Paolini and Bruno Rossi found x rays (from Scorpius X‐l) coming from outside the Solar System. Freeman Dyson in a talk given at Cornell in 1984 said: “The old quiescent universe of Aristotle, which had survived essentially intact the intellectual revolutions associated with the names of Copernicus, Newton and Einstein, disappeared forever as soon as the x‐ray telescopes went to work.” After years of rocket and balloon observations, the first x‐ray satellite, Uhuru (Swahili for “Freedom”), was launched in 1970 off the coast of Africa, accelerating the evolution of x‐ray astronomy. (See the figure on page 28.)

A scientific satellite, dedicated to X-ray astronomy, was launched into orbit from Kagoshima Space Center, University of Tokyo on 21 February 1979. “Hakucho” (CORSA-b) is a spin-stabilized satellite which watches for appearance of X-ray burst in a sky region around the direction of the spin-axis, and scans and surveys a large part of the sky for X-ray sources. The direction of the spin-axis can be maneuvered to selected celestial locations. The outline of the mission, some technical details of the instrumentation, and the operational performance of the spacecraft are described. A short summary of the observational results is also presented.

Among discrete galactic X-ray sources, Cyg X-1 has been noted for its peculiar features in several respects. It is one of the few sources with a hard power law spectrum extending beyond several hundred keV. Cyg X-1 also distinguishes itself by its profound time variability over a wide range of time scales. The most remarkable incident was that its optical identification with a spectroscopic binary HDE226868 has led to a presumption that it is a black hole. This possibility has induced continuous interests in the physical character of this source in conjunction with the nature of the black hole. The purpose of this paper is to summarize presently available pieces of knowledge on this source to help the design of future experimental and theoretical works, while the complexity of the source characteristics still has prevented us to construct a clear, coherent picture of this source in spite of the fact that numerous observational facts have been accumulated.

Results of rocket observations of SCO X-1 over the spectral range of 2∼20 keV are presented. The observations have been performed partly in India and partly in Japan under the collaboration of the three groups. The present results are compared with results of similar observations carried out by the LRL (Lawrence Radiation Laboratory) group. Some of these X-ray observations were accompanied by simultaneous optical observations. Relationships between the hardness of the X-ray spectrum and the X-ray intensity and between the hardness and the optical luminosity are compiled. The relationships among the parameters (temperature, density and size) which characterize the postulated isothermal cloud model of SCO X-1 are given. They indicate that SCO X-1 is characterized by a temperature of about 107–108K, a density of about 1016–1017 cm−3 and a radius of about 108–109 cm respectively. We further show that the temperature is inversely correlated with the size of the source; an increase in temperature corresponds to a decrease in the radius and an increase in density.

繊維の密度-水分率曲線から,(p+c) を求める式を導いた。ここにpは繊維内部 (有機媒質の浸入しない部分) の吸着水と全吸着水との質量比で, cは繊維1gあたりの外部 (有機媒質の浸入する部分) 吸着水の容積収縮に自由水の密度をかけたものである。木綿, レーヨン, 羊毛, 絹および合成繊維について,(p+c) と水分率との関係を求め, これらの繊維の吸湿性について論じた。さらに, 水中で測定した密度について論じ, cはpに比してかなり小さいことを結論した。

I shall review recent observational results on discrete X-ray sources and on the diffuse background component. Thus far, approximately forty sources have been reported. It is to be noted that the sources can not be classified in only one or two categories and that there are a variety of the sources. Figure 1 shows the situation.