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Your search keyword '"Mehandru, R."' showing total 61 results
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61 results on '"Mehandru, R."'

51. Inversion behavior in Sc[sub 2]O[sub 3]/GaN gated diodes.

Author

Kim, Jihyun, Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., and Irokawa, Y.

Subjects
*DIODES, *DIELECTRICS
Abstract

The capacitance-voltage (C-V) characteristics of Sc[sub 2]O[sub 3]/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼ 8.2 × 10[sup 12] cm[sup -2] for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc[sub 2]O[sub 3] and GaN. The Si-implanted n [sup +] regions in the gated diode structure are effective in providing a source of inversion charge. [ABSTRACT FROM AUTHOR]

Published
2002
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52. Influence of MgO and Sc[sub 2]O[sub 3] passivation on AlGaN/GaN high-electron-mobility transistors.

Author

Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C., and Han, J.

Subjects
MODULATION-doped field-effect transistors, INTEGRATED circuit passivation, MOLECULAR beam epitaxy
Abstract

Unpassivated A1GaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100 °C) layers of MgO or Sc[sub 2]O[sub 3] deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiN[sub x] passivation in terms of long-term device stability. [ABSTRACT FROM AUTHOR]

Published
2002
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56. Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

Author

Luo, B., primary, Mehandru, R., additional, Kim, J., additional, Ren, F., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, Pearton, S.J., additional, Fitch, R., additional, Gillespie, J., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, Crespo, A., additional, and Irokawa, Y., additional

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